Abstract: A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as for example in a semiconductor (such as GaAs) isolated from a parallel or adjacent gate electrodes by Nano-scale gap(s). Source and drain electrodes are separated from the photoelectric material by a smaller gap such that photoelectrons created when a photon impinges on the photoelectric material it will release a single electron under a bias (applied between the source and drain to the drain) to the drain electrode, rather than directly to the gate electrode. The drain electrode is connected to the gate electrode by a detection circuit configured to count each photoelectron that flows to the gate electrode.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Abstract: A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor components are connected with each other, such that the first semiconductor component and the second semiconductor component each have a photoelectrically active first semiconductor layer, and such that the two photoelectrically active semiconductor layers have a fixed phase relation to each other, which is adjusted by at least one photoelectrically inactive layer.

Abstract: The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

Abstract: A solid-state image pickup device 1 includes a semiconductor substrate 10, light receiving unit 14 and light shielding film 20. The solid-state image pickup device 1 is back surface incident type and photoelectrically converts light indent on the back surface S2 of the semiconductor substrate 10 from an object into electrical charges and receives electrical charges produced by photoelectric conversion at the light receiving unit 14 to image the object. The light receiving unit 14 forms a PN junction diode with the semiconductor substrate 10. The light shielding film 20 is provided over a front surface S1 of the semiconductor substrate 10 so as to cover the light receiving unit 14. The light shielding film 20 serves to shield light incident on the front surface S1 from the outside of the solid-state image pickup device 1.

Abstract: In a first aspect, a first method of determining radiation intensity is provided. The first method includes the steps of (1) providing a semiconductor device having (a) a silicon mesa; and (b) photo-gate conductor material along at least three sidewalls of the silicon mesa; (2) forming a depletion region in the silicon mesa; and (3) in response to radiation impacting the semiconductor device, creating a signal in the semiconductor device, wherein the signal has a level related to an intensity of the radiation. Numerous other aspects are provided.

Abstract: A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receiving portion in the formation region of first semiconductor region 15. Light is received by semiconductor layer 14 in this region, and the generated signal charge is accumulated. Semiconductor layer 12, 14, gate electrode for pixel selection 13a, first semiconductor region 15, second semiconductor region 16, third semiconductor region 17, etc., form transistor Tr1 for pixel selection. The threshold of junction transistor JT1, composed of semiconductor substrate 10, semiconductor layer 14, and second semiconductor region 16, etc., is modulated by means of the signal charge accumulated in semiconductor layer 14 in the light-receiving portion. When transistor Tr1 for pixel selection is ON, a voltage modulated according to the signal charge is output.

Abstract: A solid-state image pickup device 10 has an arrangement in which a second conductivity type semiconductor region 14 is formed on the surface of a first conductivity type electric charge accumulation region 13 of a light-receiving sensor portion, a shallow trench isolation layer 20 formed of an insulating layer is buried into a trench formed on a semiconductor substrate 11, the shallow trench isolation layer 20 is composed of an upper wide portion 21 and a lower narrow portion 22 and a second conductivity type semiconductor region 23 is formed around the lower narrow portion 22 of the shallow trench isolation layer 20. The solid-state image pickup device can suppress the occurrence of a dark current and a white spot, it can produce an image with high image quality and it can sufficiently maintain a sufficiently large amount of electric charges that can be handled by the light-receiving sensor portion.

Abstract: An active pixel sensor circuit comprising a photodiode, a storage node, and a transfer gate between the photodiode and storage node, where the potential barrier between the photodiode and the storage region is maintained during charge accumulation, thereby preventing charge tunneling between the photodiode and the storage region. This is achieved by electrically connecting the transfer gate, which controls charge transfer between the photodiode and the storage region, to the storage region. Connecting the transfer gate to the storage region maintains the potential barrier between the photodiode and the storage region at a threshold voltage during the charge integration period which prevents charge tunneling between the photodiode and the storage node. The threshold voltage is determined by the implant levels used to form the active pixel sensor and can be optimized by using optimum implant levels. This prevention of charge tunneling between the photodiode and the storage node eliminates image lag.

Abstract: In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.

Abstract: A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertical transfer electrodes formed above the semiconductor substrate, crossing the vertical channels; a horizontal channel disposed in the surface layer coupled to the vertical channels, having a first portion with transfer stages, each including a barrier region and a well region, and a second portion constituting a gate region with gradually decreasing width, and including an upstream region and a downstream region of different effective impurity concentration, establishing a built-in potential; horizontal transfer electrodes disposed above respective transfer stages of the horizontal channel; an output gate electrode disposed above the gate region; a floating diffusion region disposed in the surface layer coupled to the gate region of the horizontal

Abstract: The present invention is a semiconductor module (20) in which, for example, twenty-five semiconductor devices (10) with a pnotoelectric conversion function are arranged in the form of a five row by five column matrix via an electrically conductive mechanism including of six connecting leads (21 to 26). The semiconductor devices (10) in each column are connected in series, and the semiconductor devices (10) in each row are connected in parallel. Positive and negative terminals, which are embedded in a light transmitting member (28) made of a transparent synthetic resin and which protrude to the outside, are also provided. The semiconductor device (10) comprises a diffusion layer, a pn junction, and one flat surface on the surface of a spherical p-type semiconductor crystal, for example.

Abstract: A CMOS image sensor and a fabrication method thereof are provided. The CMOS image sensor includes a semiconductor substrate having an active area and an isolation area; a photodiode area and a transistor area defined on the active area; a plurality of semiconductor patterns formed on the photodiode area; a transistor formed on the transistor area; a first conductive type first diffusion region formed on the photodiode area; a first conductive type second diffusion region formed on the transistor area; and a second conductive type third diffusion region formed on the first diffusion region.

Abstract: A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. Part of the gate conductor bottom is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region.

Abstract: The present invention provides an electro-optical device capable of achieving an increased light emission efficiency and an enhanced visibility. An organic electroluminescents (EL) display device has a plurality of material layers including a luminescent layer. In a plurality of material layers layered in the direction of light emission from the luminescent layer, first and second insulating interlayers are disposed between a substrate, which is positioned at the outermost surface, and the luminescent layer. The first and second insulating interlayers have a refractive index lower than that of the substrate. Accordingly, by forming predetermined materials having a low refractive index, the resulting low refractive index layers have a low dielectric constant, and consequently, the capacity between wires can be reduced.

Abstract: A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n-type peripheral sidewall formed in a p-type substrate region underlying a pixel array region to separate the pixel array region from a peripheral circuitry region of the image sensor. The method and structure also provide improved protection from blooming.

Abstract: Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semiconducting blocking region of an impurity band semiconducting device included in a solid state photon detector.

Abstract: A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 ?m2 to about 10 ?m2. The large size of the source follower gate enables the photocharge collector area to be kept small, thereby permitting use of the pixel cell in dense arrays, and maintaining low leakage levels. Methods for forming the source follower transistor and pixel cell are also disclosed.

Abstract: A MOS or CMOS sensor with a multi-layer photodiode layer covering an array of active pixel circuits. The multi-layer photodiode layer of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. The sensor includes special features to minimize or eliminate pixel to pixel crosstalk. A micro-lens array with a micro-lens positioned above each pixel directs light illuminating the pixel toward the central portion of the pixel and away from its edges. Also, preferably carbon is added to doped amorphous silicon N or P bottom layer of the multi-layer photodiode layer to increase the electrical resistivity in the bottom layer to further discourage crosstalk. In preferred embodiments each of the pixels define a tiny surface area equal to or larger than about 3.24 square microns and smaller than or equal to about 25 square microns.

Abstract: A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

Abstract: The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region 14. With such measure, it has become possible to efficiently absorb the incident light and enhance the photoelectric conversion characteristic. In addition, a light-to-light conversion material 7 is incorporated in the photoelectric conversion region, too. With this measure, even the light of such a wavelength that an electron donating organic material cannot inherently absorb comes to be absorbed since the light-to-light conversion material 7 converts the wavelength, thus enabling the light to be utilized for carrier generation. Accordingly, an organic photoelectric conversion element with a high conversion efficiency can be obtained.

Abstract: An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.

Abstract: An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial substrate. A P+ region is formed extending from within the P well into the substrate leaving a gap between the P+ region and the N well. A gate dielectric is formed covering at least the gap, part of the P+ region, and part of the N well. A gate electrode is formed on the gate dielectric over the gap, part of the P+ region, and part of the N well. The gate electrode is biased so that the region of the substrate under the gate electrode is accumulated with holes and the region of the N well under the gate electrode is depleted of electrons. This will reduce the dark current and improve the sensitivity of the active pixel sensor.

Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

Abstract: A photoelectric converter has a first semiconductor region having a first conductivity type, a pixel region for accumulating generated carriers, a second semiconductor region having a second conductivity type disposed within the first semiconductor region and inside the pixel region, an electrode region having the second conductivity type disposed on the second semiconductor region, and an oxide film disposed around the electrode region. A first aluminum wiring contacts the electrode region via a contact hole disposed in an intermediate insulating film for transforming a signal according to a quantity of the generated carriers accumulated in the pixel region. A second aluminum wiring encircles an outer periphery of the pixel region and is held at a predetermined constant potential. A transparent conductive film is disposed on the oxide film and inside the second semiconductor region and contacts the second aluminum wiring.

Abstract: Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 ?m into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.

Abstract: A solid-state imaging device includes: a base made of an insulation material and having a frame form in planar shape with an aperture formed at an inner region; a plurality of wirings provided on one surface of the base and extending toward an outer periphery of the base from a region along the aperture; and an imaging element mounted on the surface of the base with wirings provided thereon so that a light-receptive region of the imaging element faces the aperture. An end portion on the aperture side of each of the plurality of wirings forms an internal terminal portion and an end portion on the outer peripheral side of each of the plurality of wirings forms an external terminal portion, the internal terminal portion of the wiring being connected electrically with an electrode of the imaging element.

Abstract: In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield includes a conductor whose potential stands fixed. This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.

Abstract: Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first and second leads respectively coupled to a source region on one side of the at least one channel region and a drain region on an opposite side of the at least one channel region. The transistor structure has at least two threshold voltages associated with the at least one channel region, and an I-V characteristic of the transistor structure is determined at least in part by the threshold voltages.

Abstract: An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the floating diffusion. The floating diffusion is formed from an n-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2. Finally, an amplification transistor is controlled by the floating diffusion.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

Abstract: A system and method for providing power to a light-powered transponder. In order to create a sufficient voltage differential, two different photovoltaic elements are used. The photovoltaic elements generate voltages of different polarities. Because the photovoltaic elements are used independently to generate voltages with different polarities, the present system can achieve a desired voltage differential despite the inherent difficulties presented by the use of a standard CMOS process.

Abstract: A photosensitive device with a photodiode and an amplifier is disclosed. The diode is in series with a feedback transistor which forces the voltage derived from the photocurrent to be a logarithmic function of the light intensity. A current mirror is provided which controls the bias current to the amplifier to be proportional to the photocurrent. This arrangement ensures that the amplifier, just as the voltage derived from the photocurrent, becomes faster with increasing light intensity and therefore prevents an unnecessarily high power consumption at low light intensities.

Abstract: A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between ?1 and ?2 where ?2>?1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below ?2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below ?1, and passes electromagnetic radiation at a wavelength above ?1.

Abstract: A spatial light modulator contains a substrate (90), a plurality of overlying liquid-crystal cells (202), a plurality of respectively corresponding transistors (204), an electron-beam system (400 and 500), and a control component (203). Each transistor is in electrical communication with the corresponding liquid-crystal cell. The electron-beam system bombards each transistor with electrons that cause it to be selectively in (i) a non-conductive condition in which its channel-region electric field is substantially insufficient for conduction or (ii) a conductive condition in which its channel-region electric field is sufficient for at least partial conduction. During selected time periods when a transistor is in its conductive condition, the control component provides the transistor with a control signal that results in the polarization direction of specified light being selectively rotated in passing through the corresponding liquid-crystal cell.

Abstract: An imaging cell and a method of forming the imaging cell are disclosed. The imaging cell includes a first transistor that has source, a drain, and a gate, and a second transistor that has a source, a drain, and a gate connected to the source of the first transistor. In addition, the cell has a photodiode that is partially formed over the source of the second transistor.

Abstract: The invention provides a solid-state imaging device that include a pixel array where a plurality of unit pixels each including a photo diode and an insulated gate field effect transistor for detecting a photocharge are arranged, and a control circuit that controls the operation of the pixel array. The control circuit can apply a predetermined voltage to a source diffused region of the insulated gate field effect transistor and applies voltage by which a channel region becomes a conductive state to a gate electrode to bias a junction region formed of a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type in a forward direction so as to accumulate a predetermined amount of the charge of a predetermined conductivity type in an accumulation region, and thereby causing the charge of a predetermined conductivity type accumulated in the accumulation region to be discharged.

Abstract: A nanostructured apparatus may include a mesoporous template having an array of regularly-spaced pores. One or more layers of material may conformally coat the walls to a substantially uniform thickness. Such an apparatus can be used in a variety of devices including optoelectronic devices, e.g., light emitting devices (such as LEDs, and lasers) and photovoltaic devices (such as solar cells) optical devices (luminescent, electro-optic, and magnetooptic waveguides, optical filters, optical switches, amplifies, laser diodes, multiplexers, optical couplers, and the like), sensors, chemical devices (such as catalysts) and mechanical devices (such as filters for filtering gases or liquids).

Abstract: The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain.

Abstract: There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting device includes a charge accumulating portion including a low concentration N-type (N?) layer 108 formed in a P-type well 101 and a high concentration N-type (N+) layer formed between the N? layer and a principal surface. The N+ layer is connected to an input terminal of an amplifying transistor of an output circuit, and after a reverse bias is applied to the N+ layer during discharging of the accumulated charge, the entire N? layer is depleted at least until a saturated charge is accumulated.

Abstract: A solid-state image sensor of the present invention includes a semiconductor substrate 1 having a plurality of pixels, and each of the pixels comprises an impurity layer a photoelectric converting layer, a read out region, and a gate electrode. The impurity layer includes an adjoining portion adjacent to a portion of the substrate directly beneath the gate electrode The adjoining portion includes sub-portions aligned along a width direction of a gate that is orthogonal to a transfer direction of a signal charge and a thickness direction of the substrate. An impurity density in the sub-portion 2a including a center of the adjoining portion is lower than that in the sub-portions.

Abstract: A solid-state imaging device is provided, which comprising at least one unit pixel portion. Each of the at least one unit pixel portion comprises a light receiving portion for subjecting incident light to photoelectric conversion to output electric charges, and an optical signal detecting portion comprising a first conductivity type buried region for accumulating the output electric charges. The light receiving portion comprises at least a portion of a second conductivity type impurity diffusion region, and at least a portion of a first conductivity type well region provided between a second conductivity type well region and the second conductivity type impurity diffusion region. The second conductivity type well region and the second conductivity type impurity diffusion region are separated from each other.

Abstract: To provide a semiconductor package mounting method, with excellent work efficiency, wherein the direction of a semiconductor package can be verified by a simple method before mounting. One corner of a square shaped display section provided on the surface of a semiconductor package body is chamfered such that the chamfer dimensions are different from those of the other corners. If image recognition by a camera determines that this chamfered part is located correctly, the orientation of a semiconductor package is determined to be correct. On the other hand, if image recognition determines that it is not located correctly, the orientation of the semiconductor package is adjusted until it is correct.

Abstract: Microstructure apparatus and methods are described. An exemplary movable microstructure apparatus includes a base, a plate, and a stop. The plate may be coupled to the base through a flexure, so that the plate is movable between a first angular orientation and a second angular orientation. The stop may be configured to contact the bottom portion of the plate in a contact area when the plate is in the second angular orientation. Alternatively, the stop may be configured to contact the plate in a contact area sized so that upon application of an electrostatic bias between the plate and the stop, a sufficient force holds the plate against the stop.

Abstract: A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.

Abstract: A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coupled to the active element; and an insulating layer (202) adjacent the substrate and interposed between the passive device and ground surface such that there is no resistive ground path from the passive device to the ground surface.

Abstract: There are provided a semiconductor substrate 101 on which solid-state imaging devices are formed, and a translucent member 201 provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of the solid-state imaging devices, wherein external connecting terminals are arranged on an opposing surface of the semiconductor substrate 101 to a solid-state imaging device forming surface, and the external connecting terminals are connected to the solid-state imaging devices via through-holes provided in the semiconductor substrate 101.

Abstract: A bipolar transistor in which the occurrence of Kirk effect is suppressed when a high current is injected into the bipolar transistor and a method of fabricating the bipolar transistor are described. The bipolar transistor includes a first collector region of a first conductive type having high impurity concentration, a second collector region of a first conductive type which has high impurity concentration and is formed on the first collector region, a base region of a second conductive type being formed a predetermined portion of the second collector region, and an emitter region of a first conductive type being formed in the base region. The bipolar transistor further includes the third collector region, which has higher impurity concentration than the second collector region, at the bottom of the base region.

Abstract: A method for reducing dark current in a photodiode is disclosed. The photodiode comprises a N-well formed in a P-substrate. The method comprises doping the surface of said N-well with a nitrogen dopant. Alternatively, an oxygen or silicon dopant may be used. Still alternatively, a silicon oxynitride layer may be formed over the N-well.