Abstract: In devices used for the direct conversion of heat into electricity, or vice versa, known in the art as thermoelectric power generators, thermoelectric refrigerators and thermoelectric heat pumps, the efficiency of energy conversion and/or coefficient of performance have been considerably lower than those of conventional reciprocating or rotary, heat engines and/or vapor-compression systems, employing certain refrigerants. The energy conversion efficiency of power generating devices, for example, aside from the hot and cold junction temperatures, also depends on a parameter known in the art as the thermoelectric figure of merit Z=S2?/k, where S is the thermoelectric power, ? is the electrical conductivity and k is the thermal conductivity, of the material that constitutes the p-type, and/or n-type, thermoelements, or branches, of the said devices. In order to achieve a considerable increase in the energy conversion efficiency, a thermoelectric figure of merit of the order of 10?2 K?1, or more, is needed.

Abstract: A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.

Abstract: A device for thermal sensing is disclosed based on one thermopile. The cold junctions of the thermopile are coupled thermally to a first channel comprising a first substance while the hot junctions of the thermopile are coupled thermally to a second channel comprising a second substance, the first and the second channel are separated and thermally isolated one from another. The device can further comprise a membrane to thermally and electrically isolate the thermopile and to mechanically support the thermopile. Particularly a liquid rubber, i.e., ELASTOSIL LR3003/10A, B can be used as a membrane material. Further disclosed is a method for fabricating such a device using micromachining techniques.

Abstract: A thermal monitor diode is provided that comprises a silicon thin film on an insulator mounted on a silicon substrate. An opening extends through the silicon thin film and through the insulator and partially into the silicon substrate and terminates at an end wall. A conductive material is disposed in the opening and extends to the end wall. The substrate has a P/N junction formed therein adjacent the end wall, and an insulating spacer material surrounds the conductive material and is sufficiently thin to allow temperature excursions in the silicon thin film to pass therethrough. The invention also contemplates a method of forming the diode.

Abstract: In a semiconductor device in which a switching element for allowing a current to flow to a load and a circuit for driving the switching element are formed on a common substrate, the switching element is formed of a DMOS transistor, and the circuit for driving the switching element includes an MOS transistor having a characteristic different from that of the DMOS transistor.

Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.

Abstract: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.

Abstract: A microfabricated vacuum sensor may be formed using semiconductor integrated circuit processes. The sensor may be formed inside an enclosure with a microfabricated component. The sensor may then be used to measure the pressure within the enclosure.

Abstract: A circuit for temperature sensing receives a differential voltage that corresponds to the voltage across a forward-biased PN junction. The circuit for temperature sensing provides a first current to the PN junction, and subsequently provides a second current. Also, the temperature of the PN junction is determined based on the difference between the differential voltage when the first current is applied and the differential voltage when the second current is applied. Further, the circuit for temperature sensing self-biases half of the differential signal. The other half of the differential signal is level-shifted by an amount that is fixed and predetermined based on the self-biasing to provide a sub-ranging voltage. A sub-ranging analog-to-digital conversion is performed on the differential voltage in which the sub-ranging voltage is subtracted from the differential voltage during the conversion.

Abstract: A stack of heat generating integrated circuit chips may be provided with intervening cooling integrated circuit chips. The cooling integrated circuit chips may include microchannels for the flow of the cooling fluid. The cooling fluid may be pumped using the integrated electroosmotic pumps. Removal of cooling fluid gases may be accomplished using integrated re-combiners in some embodiments.

Abstract: Thermoelectric material is produced through a process sequence including a liquid quenching, a primary solidification such as a hot pressing or extrusion and an upset forging; although the C-planes of the crystal grains are directed in parallel to the direction in which the force is exerted on flakes during the hot pressing/extrusion, the a-axes are randomly directed; the a-axes are oriented in a predetermined direction through the upset forging; this results in improvement of electric resistivity without reduction in the figure of merit.

Abstract: A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heating element is formed within the bulk layer. A first side of the first heating element is adjacent to a first portion of the insulator layer. The first heating element is adapted to be selectively activated to generate thermal energy to heat the first portion of the insulator layer and anneal a trapped electrical charge from the first portion of the insulator layer.

Abstract: A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal and a control terminal; a clamping diode device which is switched between the first main terminal and the control terminal for clamping an external voltage (VA) which is applied at the first main terminal; the clamping diode device having a first part with a first clamp voltage and a second part with a second clamp voltage (VKL?), the second part being connected in series with the first part; a controllable semiconductor switching device which is connected in parallel with the first part for controllable bridging of the first part, so that either the sum (VKL) of the first and the second clamp voltages, or the second clamp voltage (VKL?) is provided for clamping the external voltage (VA) applied at the first main terminal; and a control circuit for controlling the controllable semiconductor switching device as a funct

Abstract: A method and system for automated temperature measurement is described. The system includes a programmable logic controller, a temperature measurement diode, an analog-to-digital converter coupled to the diode and the programmable logic controller, a current source coupled to the diode and configured to generate a first current and a second current different from said first current, and a processor coupled to the current source and to the analog-to-digital converter. The processor controls the current source such that the current source sequentially applies the first current to the diode at a first point in time and applies the second current to the diode at a second point in time. The processor also receives a first voltage across the diode measured when the first current is applied to the diode and a second voltage across the diode measured when the second current is applied to the diode. Based on the first and second voltages, the processor determines the temperature proximate the diode.

Abstract: A Micro Electro-Mechanical Systems (MEMS) thermal switch. The switch includes a FET having a source and drain in a substrate and a beam isolated from the substrate. The beam is positioned over the source and the drain and spaced by a predefined gap. When the thermal set point is reached, the beam moves to electrically connect the source to the drain.

Abstract: The invention relates to a bolometric detector comprising a receiving antenna (2a, 2b, 2c, 2d) for collecting electromagnetic waves and a resistive load for converting the power of electromagnetic waves into heating power. The resistive load is the load resistor of the antenna. The invention is more particularly applied to the detection of objects in “all-weather” conditions (rain, fog, smoke, etc).

Abstract: A Wheatstone bridge circuit for a sensor has: first and second sensor elements which respond to a stimulus generated when the sensor is exposed to a sample to be measured, the first and second sensor elements comprising first and second elongated n type nano width regions formed in a suitable substrate; third and fourth sensor elements which respond to the stimulus generated when the sensor is exposed to the sample to be measured, comprising third and fourth elongated p type nano width regions formed in the substrate; and interconnections which interconnect the first and second sensor elements with the third and fourth sensor elements so that the first and second sensor elements are separated from and connected to the third and fourth sensor elements in a manner to form a Wheatstone bridge configuration.

Abstract: Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B2O3—SiO2 mixture, with the B2O3 portion a function of the reaction temperature and desired bonding strength and viscosity.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The chip temperature may be used to generate a current correction signal. The correction signal is used to tune a current on the imager chip to correct for temperature variations.

Abstract: Disclosed is a foil segment for a thermoelectric generator comprising a top plate disposed in spaced relation above a bottom plate. An array of the foil segments is perpendicularly disposed in side-by-side arrangement between and in thermal contact with the bottom and top plates. Each foil segment comprises a substrate having a thickness of about 7.5-50 microns, opposing front and back substrate surfaces and a series of spaced alternating n-type and p-type thermoelectric legs disposed in parallel arrangement on the front substrate surface. Each of the n-type and p-type legs is formed of a bismuth telluride-based thermoelectric material having a thickness of about 5-100 microns, a width of about 10-100 microns and a length of about 100-500 microns. The alternating n-type and p-type thermoelectric legs are electrically connected in series and thermally connected in parallel such that a temperature differential between the bottom and top plates results in the generation of power.

Abstract: Micromachine systems are provided. An embodiment of such a micromachine system includes a substrate that defines a trench. First and second microelectromechanical devices are arranged at least partially within the trench. Each of the microelectromechanical devices incorporates a first portion that is configured to move relative to the substrate. Methods also are provided.

Abstract: Tunneling-effect converters of thermal energy to electricity with an emitter and a collector separated from each other by a distance that is comparable to atomic dimensions and where tunneling effect plays an important role in the charge movement from the emitter to the collector across the gap separating such emitter and collector. At least one of the emitter and collector structures includes a flexible structure. Tunneling-effect converters include devices that convert thermal energy to electrical energy and devices that provide refrigeration when electric power is supplied to such devices.

Abstract: A heat loss gauge for measuring gas pressure in an environment includes a resistive sensing element and a resistive compensating element. The resistive compensating element is in circuit with the sensing element and is exposed to a substantially matching environment. An electrical source is connected to the sensing element and the compensating element for applying current through the elements. The current through the sensing element is substantially greater than the current through the compensating element. Measuring circuitry is connected to the sensing element and the compensating element for determining gas pressure in the environment to which the sensing element and compensating element are exposed based on electrical response of the sensing element and the compensating element.

Abstract: A method of manufacturing a component, in particular a thermal sensor, and a thermal sensor. The component has at least two regions having different heat conductivities, a surface region being created in a substrate and the heat conductivity of the surface region being lower than that of the surrounding substrate. For producing a flat topography on the component a layer is created which covers the surface region. The layer and the surface region have at least approximately similar physical properties.

Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

Abstract: A method for fabricating an integrated semiconductor configuration includes generating a polycrystalline layer at a surface of a base layer and doping the polycrystalline layer. An oxide layer is generated at the polycrystalline layer by rapid thermal oxidation so that the polycrystalline layer can be precisely structured. The method further includes structuring the main layer and performing the thermal oxidation at temperatures above 900° C. for less than 65 seconds. The method also includes carrying out the thermal oxidation as an initial processing step (after generating the main layer) at a temperature of at least substantially equal to the temperature for generating the main layer. A related semiconductor configuration and memory unit are also provided.

Abstract: A thermoelectric module with a simple structure with less breakage by thermal stress is provided. For this purpose, the thermoelectric module includes p-type and n-type thermoelectric elements (13, 14) which are alternately placed, and outer electrodes (15) and inner electrodes (16), which are alternately placed between the thermoelectric elements (13, 14), and at least part of at least either one of the outer electrode (15) or the inner electrode (16) has a shape approximately along an object which exchanges heat with the electrodes (15, 16). The inner electrodes (16) surround an object which exchanges heat with the electrodes (15, 16).

Abstract: A thermoelectric generator comprising a plurality of semi-conductor elements of type n an type p alternatingly disposed and connected at the ends thereof to form a plurality of thermocouples on two opposite faces of the generator, said elements being thin polycrystalline semi-conductor ceramic layers deposited on a microporous support by means of serigraphy and fixed to said support by sintering.

Abstract: The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.

Abstract: The present invention provides a temperature sensor that has high sensitivity and operates in a wide range of temperatures and VDD levels. The temperature sensor may be tailored to the application according to the conditions of temperature and VDD. The temperature sensor comprises five PNP junctions in series. The temperature sensor includes a switch that is configured to block out a predetermined number of the junctions. For example, two junctions may be blocked out. Depending on the state of the switch, the temperature sensor either blocks out a predetermined number of the junctions or operates with all of the junctions active. Blocking out the number of active junctions reduces the sensitivity of the temperature sensor for applications at low temperature and low VDD. The switch may be controlled automatically, or the switch may be hardwired. When the switch is adjusted automatically, a circuit could adjust the switch in response to the temperature information and Vdd conditions.

Abstract: A heat loss gauge for measuring gas pressure in an environment includes a resistive sensing element and a resistive compensating element. The resistive compensating element is in circuit with the sensing element and is exposed to a substantially matching environment. An electrical source is connected to the sensing element and the compensating element for applying current through the elements. The current through the sensing element is substantially greater than the current through the compensating element. Measuring circuitry is connected to the sensing element and the compensating element for determining gas pressure in the environment to which the sensing element and compensating element are exposed based on electrical response of the sensing element and the compensating element.

Abstract: An inductor obtained by laminating a plurality of ceramic layers having an internal coil conductor, and a thermistor obtained by laminating a plurality of ceramic layers having internal electrodes and having a predetermined resistance-temperature characteristic are laminated via an intermediate insulating layer. Both ends of the internal coil conductor of the inductor and the internal electrodes of the thermistor are connected to a pair of external electrodes. Thus, the inductor and the thermistor are connected in parallel.

Abstract: A device for thermal sensing is based on only one thermopile. The junctions of the thermopile are coupled thermally to a first region which includes a first substance while the hot junctions of the thermopile are coupled thermally to a second region which includes a second substance. The first and second regions are separated and thermally isolated from each other. The device can further include a membrane to thermally and electrically isolate the thermopile and to mechanically support the thermopile.

Abstract: In a semiconductor integrated circuit device, an integrated circuit portion is provided on a surface of a P-type silicon substrate and in a multilayer interconnection layer. The semiconductor integrated circuit device also includes a temperature sensor portion. At the higher level than the multilayer interconnection layer, a sheet member formed of vanadium oxide is provided. The sheet member and a resistor are connected in series between a ground potential wiring and a power-supply potential wiring, and an output terminal is connected to a connection point between the sheet member and the resistor.

Abstract: A sensor chip has a piezo-resistive bridge, a temperature resistive bridge, and a multifunctional resistor network that can be used to provide span compensation when operating the piezo-resistive bridge in a constant current mode. In the constant current mode, the multifunctional resistor network can also be used to provide a bias potential to an epitaxial layer of the sensor chip. In a constant voltage mode, the multifunctional resistor network can be used to provide three different gains for a temperature channel that includes the temperature resistive bridge in order to customize the output of the temperature channel for specific operating temperature ranges.

Abstract: A superlattice thermoelectric device. The device includes p-legs and n-legs, each leg includes a large number of at least two different very thin alternating layers of elements. The n-legs in the device includes alternating layers of silicon and silicon carbide. In preferred embodiments p-legs include a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm2 and has about 10,000 sets of n and p legs each set of legs being about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).

Abstract: A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.

Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.

Abstract: The invention provides a sensor array with different nanodisk sensors that may be fabricated by direct site-specific dip-pen nanopatterning (DPN) using precursor inks. The good flow characteristics and strong affinity of the sols to measurement electrodes enable intimate ohmic contact. The measurable, reproducible and proportionate changes in the resistance of the sensors when exposed to trace quantities of oxidative and reducing gases constitute the basis for nanodisk gas sensors. The nanodisk sensors show rapid response and ultra-fast recovery for the detection of nitrogen dioxide and acetic acid vapor. Based on the principles of pattern recognition of the olfactory system, an electronic nose that can “smell” different gaseous species is provided with the multiple nanodisk sensor array.

Abstract: Various embodiments of a semiconductor-on-insulator substrate incorporating a Peltier effect heat transfer device and methods of fabricating the same are provided. In one aspect, a circuit device is provided that includes an insulating substrate, a semiconductor structure positioned on the insulating substrate and a Peltier effect heat transfer device coupled to the insulating substrate to transfer heat between the semiconductor structure and the insulating substrate.

Abstract: In a semiconductor integrated circuit device, an integrated circuit portion is provided on a surface of a P-type silicon substrate and in a multilayer interconnection layer. The semiconductor integrated circuit device also includes a temperature sensor portion. At the higher level than the multilayer interconnection layer, a sheet member formed of vanadium oxide is provided. The sheet member and a resistor are connected in series between a ground potential wiring and a power-supply potential wiring, and an output terminal is connected to a connection point between the sheet member and the resistor.

Abstract: A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least part of the target substrate and detecting a temperature of a sensor by using the sensor facing the target substrate, and calculating a temperature of the target substrate from a parameter, including a thermal resistance between the sensor and the target substrate under the predetermined process condition, the detected heat flux, and the temperature of the sensor. The sensor is arranged opposite to heating means, through the target substrate, which heats the target substrate. The parameter may be obtained in advance by calibration.

Abstract: A semiconductor component with an integrated circuit has a cooling body as a heat sink and a temperature sensor thermally connected thereto, whose resistance is dependent on temperature. The temperature sensor contains a thin film measuring resistor, which is applied to an electrically insulating surface of a foil-like substrate, and the total thickness of the temperature sensor lies in a range of about 10 &mgr;m to 100 &mgr;m. The thin film measuring resistor is formed as a planar component, with the temperature sensor being arranged between the integrated circuit and the cooling body. The thin film measuring resistor is provided on one side with a thermal coupling layer bordering on the cooling body, while on the other side the resistor has a substrate bordering on a heat distributor, which at least partially surrounds the integrated circuit.

Abstract: The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.

Abstract: A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

Abstract: The present invention provides two or more test structures/substructures (100) that are used in a test pattern (500, 600, 700, 800) to determine a cracking threshold for a dielectric material (104) on a substrate. Each test structure/substructure (100) includes two metal structures (102) separated by the dielectric material (104) having a width (G) which is different for each test structure/substructure (100). The cracking threshold will be approximately equal to the largest width (G) of dielectric material (104) that is cracked after processing. The present invention also provides a method for determining the cracking threshold for the dielectric material (104). Two or more test structures (100) are formed on the substrate (402) followed by a determination of whether the dielectric material (104) between the two metal structures (102) for each test structure (100) has cracked during processing (404).

Abstract: The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

Abstract: A method of fabricating a reference microbolometer structure on a substrate comprises the steps of applying a sacrificial layer to the substrate; applying a further layer to the sacrificial layer, the further layer incorporating a temperature sensitive material; and partially removing the sacrificial layer from the substrate such that a portion of the sacrificial layer is not removed at least in a region between temperature sensitive material and the substrate. The portion of the sacrificial layer that is not removed thereby forms a body of solid material, and a path of low thermal impedance, between the temperature sensitive material and the substrate.