Abstract: A Micro Electro-Mechanical Systems (MEMS) thermal switch. The switch includes a FET having a source and drain in a substrate and a beam isolated from the substrate. The beam is positioned over the source and the drain and spaced by a predefined gap. When the thermal set point is reached, the beam moves to electrically connect the source to the drain.

Abstract: An integrated circuit having a temperature sensitive circuit (TSC) to generate a signal indicative of the substrate temperature near the TSC. The integrated circuit has circuitry configured to receive a TSC signal from at least one TSC and to convert the TSC signal to a signal indicative of the integrated circuit's temperature. The thermal control circuit compares the integrated circuit temperature to a threshold and produces a corrective action signal when the temperature exceeds the threshold. The corrective action signal is provided to corrective action circuitry preferably configured to modify the operation of the IC to reduce the IC temperature in proximity to the corresponding TSC.

Abstract: A thermoelectric converting element is constituted of an N-type semiconductor region, a P-type semiconductor region and metal interconnections. The N-type semiconductor region is formed simultaneously with an n31 impurity region and an n+ impurity region of a transistor in an element forming region. The P-type semiconductor region is formed simultaneously with a p− impurity region and a p+ impurity region of another transistor. In addition, the interconnections in the thermoelectric converting element are formed simultaneously with a metal interconnection connected to the transistor. Thus, a semiconductor device can be obtained, in which cooling effect can be readily achieved without increasing production cost.

Abstract: An apparatus including a circuit of n circuit levels formed over a substrate from a first level to a nth level, wherein n is greater than one, and each of the n circuit levels has a material parameter change that is at least in part caused by a thermal processing operation that is applied to more than one of the n circuit levels simultaneously. An apparatus including a circuit of a plurality of circuit levels, each of the plurality of circuit levels having substantially similar material parameters.

Abstract: A microwave power sensor and a method for manufacturing the same. The microwave power sensor includes a semiconductor substrate with a nitride or oxide film formed thereon. A membrane which is a portion of the nitride or oxide film is floated by removing a portion of the semiconductor substrate. First and second thermocouple groups are formed to be symmetrically spaced apart from each other on the membrane. An RF input end is formed on the nitride or oxide film. A heating resistor is formed on the membrane to be connected with the RF input end. First and second ground plates are formed on the nitride or oxide film at both sides of the RF input end. A third ground plate is formed on the nitride or oxide film to be connected with the heating resistor and electrically connected with the first and second ground plates. The first and second output terminals are formed on the semiconductor substrate to be connected with the first and second thermocouple groups, respectively.

Abstract: An autonomous sensor system is provided for powering sensors using thermoelectric modules driven by thermal energy. The system includes solid-state thermoelectric (TE) modules for the conversion of thermal energy to electrical energy. The TE modules are composed of p-type and n-type semiconductors that are interdigitated so that the p-type and n-type elements form thermocouples. The TE modules derive electrical power from thermal energy available in the immediate environment. The system also includes sensors that are powered by the TE module, wherein a corresponding free space signal is generated.

Abstract: In a thermoelectric generator or Peltier arrangement having a thermoelectrically active semiconductor material constituted by a plurality of metals or metal oxides the thermoelectrically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I) MexSAySBz  (I) with Me=Al, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu or Ag, SA, SB=B, C, Si, Ge, Sb, Se or Te, where SA and SB respectively come from different groups of the periodic table, x, y, z independently of one another have values from 0.

Abstract: The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

Abstract: A micromechanical switch includes a substrate, at least one pair of support members fixed to the substrate, and at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate. A contact portion is provided on the moving portion, and a driving electrode is placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction in a plane substantially parallel to the substrate with an electrostatic force so that the contact portions of the bean members which are opposed to each other are short-circuited.

Abstract: A semiconductor device is provided that simplifies wiring pattern and is capable of being etched through an etching hole as a concavity is produced over a short time period. A dielectric film 12 is formed so as to shield the concavity formed upon the upper surface of a silicon substrate 10. A circuit pattern that has a thermoelectric conversion element 18 is formed upon the dielectric film. The upper surface of the silicon wafer becomes a (100) surface, and a first etching hole 16 extending in the <110> direction of the silicon substrate and a second etching hole 17 extending in the <−110> direction are formed. These holes intersect in a cross shape. Shapes of the first and second etching holes become parallelograms which have oblique sides tilted with respect to <110> and <−110>. Imaginary rectangles passing though the vertices of the first and second etching holes are continuous.

Abstract: An electronic component includes a composite semiconductor substrate (110, 810) having a first side (111) opposite a second side (112), a semiconductor device (160, 170) at the first side of the composite semiconductor substrate, and a transducer (400, 600, 900) at the second side of the composite semiconductor substrate.

Abstract: Arrangement that supports a temperature sensor comprising a terminal probe, applied on the outside of a preferably cylindrical body, and comprising an elastic ring arranged in contact with said body and provided with a hole accommodating said terminal probe; the elastic ring is interrupted by a split-like gap that increases the elastic adaptation ability thereof. Preferably, on the outside of said ring there is provided a perimetrical groove and said hole is obtained by appropriately shaping of inner surfaces of said groove. On the inside of the ring there may be provided a through-slit, so that the groove is capable of being spread apart in correspondence of said hole.

Abstract: A thermopile on an electrically insulating substrate. A pattern is arranged on this substrate of parts which consist of a first conductive material, to which a second conductive material is applied, and parts which consist only of the first conductive material. The second material is better electrically conducting than the first and, connected as thermopile, can thereby generate a certain thermo-voltage. The second material is applied to the first, starting from a layer of the first material on the substrate, by etching stripes therein via the so-called “blind-hole etching” technique and applying the second material in these stripes.

Abstract: A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.

Abstract: An infrared detecting device possible to improve SN ratio, which is provided with a semiconductor substrate, a diaphragm set on the semiconductor substrate, a thermopile formed on the diaphragm by arranging a plurality of thermocouples composed of p-type polysilicon and n-type polysilicon in a row and electrically connecting them each other in series, and a heat absorption film formed on the central portion through an insulation layer, and sectional areas of the p-type and n-type polysilicons between hot and cold junctions of each of the thermocouples are made different from each other.

Abstract: This invention embodies an improved process for annealing integrated circuits to repair fabrication-induced damage. An integrated circuit is annealed in a pressurized, sealed chamber in which a forming gas comprising hydrogen is present. Pressurization of the chamber reduces the contribution made by the final anneal step to total thermal exposure by increasing the diffusion rate of the hydrogen into the materials from which the integrated circuit is fabricated. Ideally, the forming gas contains, in addition to hydrogen, at least one other gas such as nitrogen or argon that will not react with hydrogen and, thus, reduces the danger of explosion. However, the integrated circuit may be annealed in an ambiance containing only hydrogen gas that is maintained at a pressure greater than ambient atmospheric pressure.

Abstract: A thermoelectric cooler utilizing superlattice and quantum-well materials may be deposited directly onto a die using thin-film deposition techniques. The materials may have a figure-of-merit of greater than one.

Abstract: A method of manufacturing a component, in particular a thermal sensor, and a thermal sensor. The component has at least two regions having different heat conductivities, a surface region being created in a substrate and the heat conductivity of the surface region being lower than that of the surrounding substrate. For producing a flat topography on the component a layer is created which covers the surface region. The layer and the surface region have at least approximately similar physical properties.

Abstract: A method and system for automated temperature measurement is described. The system includes a programmable logic controller, a temperature measurement diode, an analog-to-digital converter coupled to the diode and the programmable logic controller, a current source coupled to the diode and configured to generate a first current and a second current different from said first current, and a processor coupled to the current source and to the analog-to-digital converter. The processor controls the current source such that the current source sequentially applies the first current to the diode at a first point in time and applies the second current to the diode at a second point in time. The processor also receives a first voltage across the diode measured when the first current is applied to the diode and a second voltage across the diode measured when the second current is applied to the diode. Based on the first and second voltages, the processor determines the temperature proximate the diode.

Abstract: Thermopile detector and method for fabricating the same, the method including the steps of (1) forming a diaphragm film on a substrate, (2) forming thermocouples in a given region on the diaphragm film, (3) forming a protection film on the thermocouples, (4) forming photoresist on the protection film and removing the photoresist from a given region, (5) forming a black body on an entire surface including the photoresist and removing remained photoresist and the black body on the photoresist, and (6) removing a portion of the substrate from a given region of a back-side of the substrate, to expose the diaphragm film, thereby facilitating a compatibility of fabrication process with an existing semiconductor fabrication process (a CMOS fabrication process), whereby improving a mass production capability, preventing a damage to the diaphragm film occurred in formation of the black body, and controlling a property of the black body uniform.

Abstract: A radiation sensor which includes a thermopile for detecting radiant energy. The thermopile and a support rim for the thermopile are fabricated as an integrated unit to form a support chip. The support chip is mated to a mating chip so that the thermopile is positioned in an inner cavity region of the radiation sensor. The sensor has a window which permits the transmission of radiant energy into the enclosure such that the radiant energy impinges upon a central absorber region of the thermopile.

Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.

Abstract: A semiconductor component with an integrated circuit has a cooling body as a heat sink and a temperature sensor thermally connected thereto, whose resistance is dependent on temperature. The temperature sensor contains a thin film measuring resistor, which is applied to an electrically insulating surface of a foil-like substrate, and the total thickness of the temperature sensor lies in a range of about 10 &mgr;m to 100 &mgr;m. The thin film measuring resistor is formed as a planar component, with the temperature sensor being arranged between the integrated circuit and the cooling body. The thin film measuring resistor is provided on one side with a thermal coupling layer bordering on the cooling body, while on the other side the resistor has a substrate bordering on a heat distributor, which at least partially surrounds the integrated circuit.

Abstract: An improved torus multi-element semiconductor thermoelectric hybrid utilizes a make-before-break high frequency switching output component to provide nominal alternating current voltage outputs. Overall efficiency of heat conversion is improved by coupling a chiller to the thermoelectric generator where exhaust heat produces chilled liquid or air that is conveyed to the cold side of the thermoelectric device.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract: In at least one embodiment, the invention is a temperature sensor having a temperature sensitive material positioned within a shell. The shell has a first section and a second section, which are attached together by a non-adhesive bond. The non-adhesive bond being an atomic bond, such as a diffusion bond. The temperature sensitive material is capable of emitting a radiation signal which varies in its magnitude and character as the material's temperature changes. The shell allows transmission of the radiation signal through the shell to an external processor. Analysis of the emitted radiation signal by the processor can provide a temperature measurement. The temperature sensitive material is a phosphorescent, such as a phosphor. The shell may be made of a material which can be diffusion bonded, such materials include a silicon comprising material, a glass, a plastic, a sapphire and a quartz.

Abstract: A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer.

Abstract: The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: A torsion bar type torque sensor system is provided with the following: an elastic member that receives a torque and converts the torque to a torsion displacement; a multipolar ring magnet in which N poles and S poles are circumferentially and alternately magnetized; a pair of magnetic yoke halves disposed coaxially with the ring magnet; and a magnetometric sensor that detects magnetic flux generated between the pair of the magnetic yoke halves. The magnetometric sensor is made of a semiconductor that integrates a semiconductor magnetometric sensor, a non-volatile memory, a computation circuit, and an output circuit. This structure provides a torque sensor system that has an excellent maintainability.

Abstract: A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer.

Abstract: The present invention is to provide a chip type electronic part without the risk of generating a tombstone at the time of soldering on a circuit substrate. External electrodes are formed at both end parts of an electronic part element, with the external electrodes comprising electrodes at the base layer formed as a thin film and solders at the outermost layer, with the solders at the outermost layer containing Sn and Pb as the main component and 0.1 to 0.4% by weight of Ag.

Abstract: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

Abstract: Application of a potential difference across a doped region formed on an integrated circuit allows management of thermal energy directly on the chip surface. Individual temperature control cells are formed by ion implanting N- and P-type dopant into adjacent regions, and then forming a metal bridge across the similarly positioned ends. Placing a potential drop across metal contacts of the cell changes the temperature of the contacts relative to that of the electrically conducting bridge. Fabrication of arrays of temperature control cells of various shapes and sizes permits extremely precise heating and cooling of specific regions of the integrated circuit. Management of thermal energy on the IC in accordance with the present invention may be enhanced by forming arrays of temperature control cells possessing multiple tiers.

Abstract: An infrared photo-detector focal plane array includes detectors with quantum well layers that are spectrally “tuned” to impinging radiation by modulating the voltage biases applied across each quantum well layer. Read out circuits, interfaced with each detector of the array, process the photo-currents received from each detector to determine the absolute temperature of the remote infrared source from which the impinging radiation originated.

Abstract: A method and system for implementing a variable function circuit within a single semiconductor chip. The semiconductor chip can be configured as a single circuit that provides varying functions according to extrinsic conditions. The single circuit can be permitted to be switched between a particular function and a different particular function, thereby promoting a decreased complexity in circuit design and a decrease in physical dimensions necessary to manufacture the semiconductor chip. Additionally, at least one portion of the semiconductor chip may be designated to the particular function and at least one other portion of the semiconductor chip to the different particular function. The semiconductor chip may thus act as a function switch.

Abstract: An integrated circuit device having a built-in thermoelectric cooling mechanism is disclosed. The integrated circuit device includes a package and a substrate. Contained within the package, the substrate has a front side and a back side. Electric circuits are fabricated on the front side of the substrate, and multiple thermoelectric cooling devices are fabricated on the back side of the same substrate. The thermoelectric cooling devices are utilized to dissipate heat generated by the electric circuits to the package.

Abstract: The present invention provides an on-chip temperature sensor formed of an MOS tunneling diode. The temperature sensor is formed by processes which are compatible with the below 0.13 &mgr;m CMOS technology, so it can be fabricated with MOS devices and integrated into an IC chip. Since the MOS tunneling diode has the characteristic of a diode, a formula showing the exponential relationship between the gate current and the substrate temperature can be obtained when the MOS tunneling diode is biased inversely at a constant voltage. After the current of the MOS tunneling diode is detected, the substrate temperature which represents the real temperature of the IC chip can be figured out.

Abstract: A semiconductor device is provided that simplifies wiring pattern and is capable of being etched through an etching hole as a concavity is produced over a short time period. According to the semiconductor device of the present invention, a dielectric film 12 is formed so as to shield the concavity formed upon the upper surface of a silicon substrate 10. A circuit pattern that has a thermoelectric conversion element 18 is formed upon the dielectric film. The upper surface of the silicon wafer becomes a (100) surface, and a first etching hole 16 extending in the <110> direction of the silicon substrate and a second etching hole 17 extending in the <−110> direction are formed. These holes intersect in a cross shape. Shapes of the first and second etching holes become parallelograms which have oblique sides tilted with respect to <110> and <−110>. Imaginary rectangles passing though the vertices of the first and second etching holes are continuous.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: A device for thermal sensing is disclosed based on only one thermopile. The cold junctions of said thermopile are coupled thermally to a first channel comprising a first substance while the hot junctions of said thermopile are coupled thermally to a second channel comprising a second substance, said first and said second channel are separated and thermally isolated one from another. Said device can further comprise a membrane to thermally and electrically isolate said thermopile and to mechanically support said thermopile. Particularly a liquid rubber, i.e. ELASTOSIL LR3003/10A, B can be used as a membrane material. Further disclosed is a method for fabricating such a device using micromachining techniques.

Abstract: A thermoelectric converting element is constituted of an N-type semiconductor region, a P-type semiconductor region and metal interconnections. The N-type semiconductor region is formed simultaneously with an n31 impurity region and an n+ impurity region of a transistor in an element forming region. The P-type semiconductor region is formed simultaneously with a p− impurity region and a p+ impurity region of another transistor. In addition, the interconnections in the thermoelectric converting element are formed simultaneously with a metal interconnection connected to the transistor. Thus, a semiconductor device can be obtained, in which cooling effect can be readily achieved without increasing production cost.

Abstract: In a thermoelectric generator or Peltier arrangement having a thermoelectrically active semiconductor material constituted by a plurality of metals or metal oxides the thermoelectrically active material is selected from a p- or n-doped semiconductor material constituted by a ternary compound of the general formula (I)

Abstract: The electric power breaker for breaking the electric power is placed on the midpoint of the electric power line from the battery power supply, and the electric power line is extracted from the electric power breaker. In addition, the electric power supply terminal is placed on the midpoint on the electric power line, from which the electric power is supplied to the individual electric load. The electric power distribution and the electric power supply operation to the electric loads are controlled by the multiplex communication. A semiconductor device having a self protection function is used as the switching device for supplying the electric power. The electric power line covered by the electric conductive material is arranged in a loop topology so as to start from the connection point to the battery and pass through the designated positions in the vehicle and return to the battery.

Abstract: At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.

Abstract: A method and system for automated temperature measurement is described. The system includes a programmable logic controller, a temperature measurement diode, an analog-to-digital converter coupled to the diode and the programmable logic controller, a current source coupled to the diode and configured to generate a first current and a second current different from said first current, and a processor coupled to the current source and to the analog-to-digital converter. The processor controls the current source such that the current source sequentially applies the first current to the diode at a first point in time and applies the second current to the diode at a second point in time. The processor also receives a first voltage across the diode measured when the first current is applied to the diode and a second voltage across the diode measured when the second current is applied to the diode. Based on the first and second voltages, the processor determines the temperature proximate the diode.

Abstract: The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.