Abstract: To achieve a package-on-package having an advantageously reduced height, a first package substrate has a window sized to receive a second package die. The first package substrate interconnects to the second package substrate through a plurality of package-to-package interconnects such that the first and second substrates are separated by a gap. The second package die has a thickness greater than the gap such that the second package die is at least partially disposed within the first package substrate's window.

Abstract: The method comprises providing a carrier, providing a plurality of semiconductor chips, the semiconductor chips each comprising a first main face and a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on the carrier with the second main faces facing the carrier, and applying an encapsulation material to the side faces of the semiconductor chips.

Abstract: An light emitting diode (LED) module includes a circuit board, a plurality of LED chips arranged on and electrically connected to the circuit board, and an encapsulant arranged on the circuit board and covering the LED chips, a plurality of first recesses defined in a first surface of the circuit board.

Abstract: A slim LED package configured to handle large current, having a narrow width, an LED chip mounting area positioned centro-symmetrically within the package, mounting holes positioned equidistantly from the mounting area, wherein multiple packages may be arranged with alternating anode and cathode ends in such a manner that a high-power density radiometric flux line may be created. Some embodiments include current density management areas positioned on one more sides of the LED chip mounting area.

Abstract: An integrated circuit film comprising a circuit board and a control circuit is provided. The circuit board has an IC-installation part and a contact part and having a first surface and a second surface opposite to the first surface. The contact part comprises a first set of pads and a second set of pads. The first set of pads are located on the first surface for communicating with an electrical communication device. The second set of pads are located on the second surface for communicating with a smart card. The control circuit is mounted on the IC-installation part for communicating with the electrical communication device through one of the first set of pads configured in accordance with a single wire protocol (SWP), a communication protocol.

Abstract: In some embodiments in accordance with the present disclosure, a semiconductor device including a semiconductor substrate is received. An interconnect structure is provided over the semiconductor substrate, and a passivation is provided over the interconnect structure. The passivation includes an opening such that a portion of the interconnect structure is exposed. Moreover, a dielectric is provided over the passivation, and a post-passivation interconnect (PPI) is provided over the dielectric. The PPI is configured to connect with the exposed portion of the interconnect structure through an opening in the dielectric. Furthermore, the PPI includes a receiving area for receiving a conductor, and a trench adjacent to the receiving area. In certain embodiments, the receiving area is defined by the trench.

Abstract: A tape package includes a base substrate including a signal transmitting area and a protruding area protruded from the signal transmitting area, an integrated circuit chip mounted on the base substrate, and a lead line disposed on the base substrate and including a first portion electrically connected with the integrated circuit chip, a second portion electrically connected with the first portion and extending in a first direction, and a third portion electrically connected with the second portion and extending in a second direction crossing the first direction.

Abstract: An interconnecting conduction structure for electrically connecting conductive traces of a lapped flexible circuit board is disclosed. The lapped flexible circuit board includes a first flexible circuit board and a second flexible circuit board. A through hole is formed in the second flexible circuit board and an interconnecting conduction member is filled in the through hole of the second flexible circuit board. The interconnecting conduction member is electrically connected to a second solder pad of the second flexible circuit board and a first solder pad of the first flexible circuit board in order to formed a lapped connection between conductive traces of the first flexible circuit board and the second flexible circuit board.

Abstract: Auxiliary wiring boards 5a and 5b have electrode pads 51a and 51b which are electrically connected to electrode extraction units 26a and 26b of an organic EL device 21 and metal pads 52a and 52b which are electrically connected to the electrode pads 51a and 51b. The metal pads 52a and 52b are wire-bonded to metal lands 31a and 31b of a wiring board 3 by ultrasonic waves at a low joining temperature. Accordingly, a thermal denaturation of the organic EL device 21 can be suppressed and moreover, the organic EL device 21 can be electrically connected to the wiring board 3 regardless of whether the electrode extraction units 26a and 26b are made up of the metal material or the non-metal material.

Abstract: Package-on-package (POP) devices and methods of manufacturing the POP devices are provided. In the POP devices, a thermal interface material layer disposed between lower and upper semiconductor packages may contact about 70% or greater of an area of a top surface of a lower semiconductor chip. According to methods, the upper semiconductor package may be mounted on the lower semiconductor chip using a weight.

Abstract: A power semiconductor device is provided with a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate; semiconductor elements for electric power which are affixed to the surface of the front-surface electrode pattern; a partition wall which is provided on the front-surface electrode pattern so as to enclose the semiconductor elements for electric power; a first sealing resin member which is filled inside the partition wall; a second sealing resin member which covers the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall, wherein an electrode for a relay terminal is provided on a surface of the partition wall, and a wiring from inside of the partition wall to outside of the partition wall is led out via the electrode for a relay terminal.

Abstract: Embodiments of the present disclosure provide an electronic package assembly comprising a solder mask layer, the solder mask layer having at least one opening, and a plurality of pads coupled to the solder mask layer, wherein at least one pad of the plurality of pads includes (i) a first side, (ii) a second side, the first side being disposed opposite to the second side, (iii) a terminal portion and (iv) an extended portion, wherein the first side at the terminal portion is configured to receive a package interconnect structure through the at least one opening in the solder mask layer, the package interconnect structure to route electrical signals between a die and another electronic device that is external to the electronic package assembly, and wherein the second side at the extended portion is configured to receive one or more electrical connections from the die.

Abstract: An embedded chip package structure including a core layer, a chip, a first circuit layer and a second circuit layer is provided. The core layer includes a first surface, a second surface opposite to each other and a chip container passing through the first surface and the second surface. The chip is disposed in the chip container. The chip includes an active surface and a protrusion and a top surface of the protrusion is a part of the active surface. The first circuit layer is disposed on the first surface and electrically connected to the core layer and the chip. The first circuit layer has a through hole. The protrusion of the chip is situated within the through hole, and the top surface of the protrusion is exposed to receive an external signal. The second circuit layer is disposed on the second surface and electrically connected to the core layer.

Abstract: The present invention provides a chip-on-film (COF) tape and a corresponding COF bonding method. The COF tape comprises a base tape, a plurality of first COFs and second COFs, the first and second COFs are arranged on the base tape in an alternating manner, and are correspondingly punched onto a moving platform by a punching mechanism, and are respectively bonded onto two side edges of a liquid crystal panel. The present invention can simultaneously process the bonding operations of the two types of COF by using only one COF tape and one set of equipment, thus lowering the cost and increasing the productivity.

Abstract: An electrical component package is disclosed comprising: an electrical component having an embedded surface, a structure attached to the electrical component opposite the embedded surface, a conductive adhesive directly attached to the embedded surface, where the conductive adhesive is shaped to taper away from the embedded surface, and an encapsulation material covering the conductive adhesive and the electrical component. In various embodiments, the tapered conductive adhesive facilitates the securing of the conductive adhesive to the electrical component by the encapsulation material. Also disclosed are various methods of forming an electrical component package having a single interface conductive interconnection on the embedded surface. The conductive interconnection is configured to maintain an interconnection while under stress forces. Further disclosed in a method of applied a conductive adhesive that enables design flexibility regarding the shape and depth of the conductive interconnection.

Abstract: An optical transmitter including: an optical module; an interconnecting circuit board configured to be electrically coupled to the optical module; and a printed circuit board configured to be electrically coupled to the interconnecting circuit board; wherein the interconnecting circuit board includes: a coplanar waveguide; and a microstrip line including a signal wiring line extended from an end of the coplanar waveguide and a ground wiring line, wherein the width of the signal wiring line is narrower than the width of a signal wiring line of the coplanar waveguide, and the spacing between the signal wiring line extended from the end of the coplanar waveguide and the ground wiring line is smaller than the spacing between the signal wiring line of the coplanar waveguide and the ground wiring line.

Abstract: Patterned photoresist is used to attach a carrier wafer to a silicon device wafer. In one example, a silicon wafer is patterned for contact bumps by applying a photoresist over a surface of the wafer and removing the photoresist in locations at which the contact bumps are to be formed. The contact bumps are formed in the locations at which the photoresist is removed. A temporary carrier is attached to the photoresist over the wafer. The back side of the wafer opposite the contact bumps is processed while handling the wafer using the temporary carrier. The temporary carrier is removed. The photoresist on the front side of the wafer with the contact bumps is removed after removing the temporary carrier.

Abstract: In the case where input terminals of a display driver circuit are compatible with two or more types of interface specifications, an LSI chip, which is the display driver circuit, has some input terminals connected to parallel data lines and its output terminals connected to display lines, and these input terminals and output terminals are arranged along a long side located on the display portion side. In at least one example embodiment, the rest of the input terminals, which are intended for parallel interface, are arranged along a long side located on the FPC board side. With this configuration, the long sides of the LSI chip can be rendered shorter (than in the case where all input terminals are arranged in a row) without causing malfunction.

Abstract: A semiconductor integrated circuit device includes a COF substrate; a semiconductor integrated circuit mounted on the COF substrate and having a first voltage circuit portion operating at a first voltage range and a second voltage circuit portion operating at a second voltage range higher than the first voltage range, the circuit portions being formed on a single chip; and a resin layer for sealing the COF substrate and the semiconductor integrated circuit.

Abstract: An apparatus for checking bank notes in a bank note processing machine includes at least one sensor. The sensor is arranged to determine the information characterizing the bank notes to be checked and is connected to a bending resistant carrier via a first adhesive layer. The bending resistant carrier is further connected to a component of the apparatus for checking bank notes and/or directly with the bank note processing machine via a second, permanently elastic adhesive layer.

Abstract: A wiring board includes first insulating layers and second insulating layers formed on a core layer in this order; a third insulating layer and a solder resist layer formed on another surface of the core layer in this order, first wiring layers and second wiring layers formed in the first insulating layers and the second insulating layers, respectively, wherein a first end surface of the first via wiring exposes from the first surface of the outermost first insulating layer to be directly connected with an outermost second wiring layer, the first via wiring and the outermost second wiring layer being separately formed, the first surface of the outermost first insulating layer and the first end surface of the first via wiring are polished surfaces, smooth surfaces and are flush with each other, and the wiring density of the second wiring layers is higher than that of the first wiring layers.

Abstract: A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first cavity; an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower mold; and a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain an individual semiconductor apparatus.

Abstract: One aspect is a method of manufacturing a semiconductor device and semiconductor device. One embodiment provides a plurality of modules. Each of the modules includes a carrier and at least one semiconductor chip attached to the carrier. A dielectric layer is applied to the modules to form a workpiece. The dielectric layer is structured to open at least one of the semiconductor chips. The workpiece is singulated to obtain a plurality of devices.

Abstract: A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post carrier. A semiconductor die is mounted to the base plate of the post carrier within the etched portions of the photosensitive encapsulant. A second encapsulant is deposited over the semiconductor die. A first circuit build-up layer is formed over the second encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. The base plate of the post carrier is removed and a second circuit build-up layer is formed over the semiconductor die and the photosensitive encapsulant opposite the first circuit build-up layer. The second circuit build-up layer is electrically connected to the conductive posts.

Abstract: Various embodiments related to a compact device package are disclosed herein. In some arrangements, a flexible substrate can be coupled to a carrier having walls angled relative to one another. The substrate can be shaped to include two bends. First and second integrated device dies can be mounted on opposite sides of the substrate between the two bends in various arrangements.

Abstract: Representative implementations of devices and techniques provide improved electrical access to components, such as chip dice, for example, disposed within layers of a multi-layer printed circuit board (PCB). One or more insulating layers may be located on either side of a spacer layer containing the components. The insulating layers may have apertures strategically located to provide electrical connectivity between the components and conductive layers of the PCB.

Abstract: A chip packaging substrate includes a flexible substrate, a plurality of test pads, and a plurality of leads, wherein the flexible substrate has a first surface and a second surface, and the first surface has a user area and a test pad area configured thereon. The test pads are arranged in at least three rows within the test pad area. The lead connected to the test pad in the middle row includes a first section extending from the chip to the test pad area and a second section disposed on the second surface, wherein one end of the second section penetrates the flexible substrate to connect with the first section and the other end penetrates the flexible substrate to connect with the test pad, so as to increase the dimensions of the test pads.

Abstract: An apparatus (20) for use as an amplifier has a transistor (26) for providing signal amplification, a heat pipe or circulated fluid heat sink (22) and a thermal interface device (24) for providing mechanical and thermal connection between the transistor (26) and the heat sink (22). In use, to facilitate efficient transfer of heat/thermal energy from the transistor (26) to the heat sink (22), the plate (24) is provided between the heat sink (22) and the transistor (26). The plate (24) connects the heat sink (22) to the transistor (26) and provides a thermal conduit therebetween.

Abstract: A light emitting diode (LED) package is provided. According to an embodiment, a light emitting apparatus includes a substrate; at least two distinct electrodes on the substrate; a light emitting device on one of the at least two distinct electrodes, wherein the at least two distinct electrodes are electrically separated from each other and spaced from each other; a guide unit on the substrate and around the light emitting device, wherein the guide unit includes an inner side surface, an outer side surface, a top surface and a bottom surface; and lenses including a first lens and a second lens on the substrate, wherein at least one of the lenses includes a convex shape and a portion of the at least one of the lenses is located higher than the top surface of the guide unit.

Abstract: A system-in-package includes a package carrier; a first semiconductor die having a die face and a die edge, the first semiconductor die being assembled face-down to a chip side of the package carrier, wherein a plurality of contact pads are situated on the die face; a second semiconductor die mounted on the package carrier and adjacent to the first semiconductor die; a rewiring laminate structure between the first semiconductor die and the package carrier, the rewiring laminate structure comprising a re-routed metal layer, wherein at least a portion of the re-routed metal layer projects beyond the die edge; and a plurality of copper pillar bumps arranged on the rewiring laminate structure for electrically connecting the first semiconductor die with the package carrier.

Abstract: To provide a semiconductor device having a reduced size and thickness while suppressing deterioration in reliability. After a semiconductor wafer is ground at a back surface thereof with a grinding material into a predetermined thickness, the resulting semiconductor wafer is diced along a cutting region to obtain a plurality of semiconductor chips. While leaving grinding grooves on the back surface of each of the semiconductor chips, the semiconductor chip is placed on the upper surface of a die island via a conductive resin paste so as to face the back surface of the semiconductor chip and the upper surface of the die island each other. The die island has, on the upper surface thereof, a concave having a depth of from 3 ?m to 10 ?m from the edge of the concave to the bottom of the concave.

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract: A wafer-level package device and techniques for fabricating the device are described that include embedding a silicon chip onto an active device wafer or a passive device wafer, where the embedded silicon chip is a thin chip (e.g., <50 ?m). In implementations, the wafer-level package device that employs the techniques of the present disclosure includes an active device wafer, a thin integrated circuit chip, an encapsulation structure covering at least a portion of the active device wafer and the thin integrated circuit chip, a redistribution layer structure, and at least one solder bump for providing electrical interconnectivity. Once the wafer is singulated into semiconductor devices, each semiconductor device including the embedded thin integrated circuit chip may be mounted to a printed circuit board.

Abstract: A semiconductor device has a semiconductor die mounted over the carrier. An encapsulant is deposited over the carrier and semiconductor die. The carrier is removed. A first interconnect structure is formed over the encapsulant and a first surface of the die. A second interconnect structure is formed over the encapsulant and a second surface of the die. A first protective layer is formed over the first interconnect structure and second protective layer is formed over the second interconnect structure prior to forming the vias. A plurality of vias is formed through the second interconnect structure, encapsulant, and first interconnect structure. A first conductive layer is formed in the vias to electrically connect the first interconnect structure and second interconnect structure. An insulating layer is formed over the first interconnect structure and second interconnect structure and into the vias. A discrete semiconductor component can be mounted to the first interconnect structure.

Abstract: A package structure is disclosed, which includes: a carrier having a recessed portion formed on a lower side thereof and filled with a dielectric material; a semiconductor element disposed on an upper side of the carrier and electrically connected to the carrier; and an encapsulant formed on the upper side of the carrier for encapsulating the semiconductor element. Therein, the dielectric material is exposed from the encapsulant. As such, when the carrier is disposed on a circuit board, the dielectric material is sandwiched between the lower side of the carrier and the circuit board to form a decoupling capacitor, thereby improving the power integrity.

Abstract: Contactless differential coupling structures can be used to communicate signals between circuits located on separate chips or from one chip to a probing device. The contactless coupling structures avoid problems (breaks, erosion, corrosion) that can degrade the performance of ohmic-type contact pads. The contactless coupling structures comprise pairs of conductive pads placed in close proximity. Differential signals are applied across a first pair of differential pads, and the signals are coupled wirelessly to a mating pair of conductive pads. Circuitry for generating and receiving differential signals is described.

Abstract: There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.

Abstract: A semiconductor device includes a semiconductor substrate with doped regions of a first type and doped regions of a second type. A first metallization layer connects to the doped regions of the first type through conductive paths, such that current is able to flow within the metallization layer along a plurality of linear axes. A second metallization layer connects to the doped regions of the second type through conductive paths, such that that current is able to flow within the metallization layer along a plurality of linear axes. Contacts on an exterior surface of the semiconductor device can be arranged concentrically.

Abstract: Disclosed herein is an interposer, including: an interposer substrate configured by stacking an insulating layer of one layer or more and interlayer connected through a via; a cavity penetrating through a center of the interposer substrate in a thickness direction; and a connection electrode having a post part which is disposed on at least one of an upper surface and a lower surface of the interposer substrate, thereby increasing electrical characteristics and reducing manufacturing cost and time.

Abstract: A circuit board is provided including a core insulation film having a thickness and including a first surface and an opposite second surface, an upper stack structure and a lower stack structure. The upper stack structure has a thickness and has an upper conductive pattern having a thickness and an overlying upper insulation film stacked on the first surface of the core insulation film. The lower stack structure has a thickness and has a lower conductive pattern having a thickness and an overlying lower insulation film stacked on the second surface of the core insulation film. A ratio P of a sum of the thicknesses of the upper conductive pattern and the lower conductive pattern to a sum of the thicknesses of the core insulation film, the upper stack structure and the lower stack structure is in a range from about 0.05 to about 0.2.

Abstract: Printed circuits may be electrically and mechanically connected to each other using connections such as solder connections. A first printed circuit such as a rigid printed circuit board may have solder pads and other metal traces. A second printed circuit such as a flexible printed circuit may have openings. Solder connections may be formed in the openings to attach metal traces in the flexible printed circuit to the solder pads on the rigid printed circuit board. A ring of adhesive may surround the solder connections. The flexible printed circuit may be attached to the rigid printed circuit board using the ring of adhesive. An insulating tape may cover the solder connections. A conductive shielding layer with a conductive layer and a layer of conductive adhesive may overlap the solder joints. The conductive adhesive may connect the shielding layer to the metal traces on the rigid printed circuit board.

Abstract: A light emitting diode (LED) package is provided. The LED package includes a printed circuit board (PCB), an electrode pad, an LED, a wire, and first and second moldings. The electrode pad and the LED are formed on the PCB. The wire electrically connects the LED with the electrode pad. The first molding is formed on the LED and the second molding is formed on the first molding.

Abstract: A symmetrical, flat laminate structure used to minimize variables in a test structure to experimentally gauge white bump sensitivity to CTE mismatch is disclosed. The test structure includes a flat laminate structure. The method of using the test structure includes isolating a cause of a multivariable chip join problem that is adversely impacted by warpage and quantifying a contribution of the warpage, itself, in a formation of the multivariable chip join problem.

Abstract: A wiring board includes a substrate having a cavity, and an electronic component accommodated in the cavity of the substrate. The substrate has a thickness which is greater than a thickness of the electronic component such that a ratio of the thickness of the substrate to the thickness of the electronic component is set in a range of 0.3 or greater and 0.7 or less.

Abstract: A semiconductor package includes a wiring substrate, a semiconductor chip, and a conductor plate in order to reduce a voltage drop at the central portion of a chip caused by wiring resistance from a peripheral connection pad disposed on the periphery of the chip. Central electrode pads for use in ground/power-supply are disposed on the central portion of the chip. The conductor plate for use in ground/power-supply is disposed on the chip such that an insulating layer is disposed therebetween. The central electrode pads on the chip and the conductor plate are connected together by wire bonding through an opening formed in the insulating layer and the conductor plate. An extraction portion of the conductor plate is connected to a power-supply wiring pad on the wiring substrate. Preferably, the conductor plate is composed of a multilayer structure, and each conductor plate is used in power-supply wiring or ground wiring.

Abstract: A microelectronic package can include a substrate having first and second opposed surfaces, and first and second microelectronic elements having front surfaces facing the first surface. The substrate can have a plurality of substrate contacts at the first surface and a plurality of terminals at the second surface. Each microelectronic element can have a plurality of element contacts at the front surface thereof. The element contacts can be joined with corresponding ones of the substrate contacts. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto. The element contacts of the first microelectronic element can be arranged in an area array and are flip-chip bonded with a first set of the substrate contacts. The element contacts of the second microelectronic element can be joined with a second set of the substrate contacts by conductive masses.

Abstract: A coreless pin-grid array (PGA) substrate includes PGA pins that are integral to the PGA substrate without the use of solder. A process of making the coreless PGA substrate integrates the PGA pins by forming a build-up layer upon the PGA pins such that vias make direct contact to pin heads of the PGA pins.

Abstract: A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises:a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area; a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via; a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area; and a second thermal and electrical contact pad disposed under the second dielectric layer, wherein the second contact pad physically contacts the second substrate via.

Abstract: A metal plate covers an opening on the upper surface of a core substrate and exposes an outer edge of the upper surface of the core substrate. A conductive layer covers the lower surface of the core substrate. A semiconductor chip bonded to a first surface of the metal plate is exposed through the opening. A first insulating layer covers the upper and side surface of the metal plate and the outer edge of the upper surface of the core substrate. A second insulating layer fills the openings of the metal plate and the conductive layer and covers the outer edge of the lower surface of the core substrate, the conductive layer, and the semiconductor chip. The metal plate is thinner than the semiconductor chip. Total thickness of the conductive layer and the core substrate is equal to or larger than the thickness of the semiconductor chip.

Abstract: The disclosure concerns a semiconductor device having conductive vias. In an embodiment, the semiconductor device includes a substrate having at least one conductive via formed therein. The conductive via has a first end substantially coplanar with an inactive surface of the substrate. A circuit layer is disposed adjacent to an active surface of the substrate and electrically connected to a second end of the conductive via. A redistribution layer is disposed adjacent to the inactive surface of the substrate, the redistribution layer having a first portion disposed on the first end an electrically connected thereto, and a second portion positioned upward and away from the first portion. A die is disposed adjacent to the inactive surface of the substrate and electrically connected to the second portion of the redistribution layer.