Abstract: A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

Abstract: A method of packaging a semiconductor device having a bond pad on a surface thereof includes forming a redistribution material electrically coupled to the bond pad, forming a dielectric material over the redistribution material, and removing a first portion of the dielectric material to expose a first portion of the redistribution material. Semiconductor packages may include a redistribution layer having a first portion adjacent and coupled to a first contact of the package, a second portion exposed by a first opening in a dielectric material, and a redistribution line electrically coupled to a first bond pad, the first portion, and the second portion. Such a package may be tested placing at least one probe needle in contact with at least one terminal of the package, providing a test signal from the probe needle to the package through the terminal, and detecting signals using the needle.

Abstract: A semiconductor device includes a first die embedded in a molding material, where contact pads of the first die are proximate a first side of the molding material. The semiconductor device further includes a redistribution structure over the first side of the molding material, a first metal coating along sidewalls of the first die and between the first die and the molding material, and a second metal coating along sidewalls of the molding material and on a second side of the molding material opposing the first side.

Abstract: An embodiment is a wiring substrate that includes a first metal plate. The first metal plate includes a first electrode and a wiring, and the wiring includes a mount portion for an electronic component. The wiring substrate further includes a second metal plate. The second metal plate includes a second electrode diffusion-bonded to an upper surface of the first electrode. The second metal plate includes a first opening that exposes the mount portion. The first opening is large enough to accommodate the electronic component.

Abstract: A semiconductor device, including a first conductive portion including a first conducting region and a first wiring region communicating with the first conducting region via a first communicating portion, a second conductive portion including a second conducting region and a second wiring region that communicates with the second conducting region via a second communicating portion and that faces the first wiring region with a prescribed space therebetween, and a wiring member electrically connecting the first wiring region and the second wiring region in a wiring direction. The first communicating portion and the second communicating portion are separate from each other when viewed from the wiring direction.

Abstract: Provided is a small-sized power semiconductor device in which interference between power modules adjacently disposed is prevented and the areas of the gaps occurring between the power modules are reduced. In a power semiconductor device formed by adjacently disposing power modules in an arc shape on a heat sink, each of which power modules is obtained by sealing, with a mold resin, a switchable power semiconductor chip, a lead frame in which potential leads and signal terminals connected to the power semiconductor chip are formed, and a metallic inner lead electrically connecting an upper surface electrode of the power semiconductor chip and the lead frame, any one of the adjacent power modules is formed in a pentagonal shape having, at a portion adjacent to the other power module, an oblique side 10a obtained by cutting out one corner of a quadrangle.

Abstract: A universal electrochemical micro-sensor can be used either as a biosensor or an environmental sensor. Because of its small size and flexibility, the micro-sensor is suitable for continuous use to monitor fluids within a live subject, or as an environmental monitor. The micro-sensor can be formed on a reusable glass carrier substrate. A flexible polymer backing, together with a set of electrodes, forms a reservoir that contains an electrolytic fluid chemical reagent. During fabrication, the glass carrier substrate protects the fluid chemical reagent from degradation. A conductive micromesh further contains the reagent while allowing partial exposure to the ambient biological or atmospheric environment. The micromesh density can be altered to accommodate fluid reagents having different viscosities. Flexibility is achieved by attaching a thick polymer tape and peeling away the micro-sensor from the glass carrier substrate.

Abstract: A method for shaping a laminate substrate includes characterizing the laminate substrate for warpage characteristics over a range of temperatures. The laminate substrate is placed into a shaping fixture with any necessary correction to obtain a flat laminate substrate chip site area at a chip join temperature. The laminate substrate is shaped at a temperature greater than or equal to a maximum laminate substrate fabrication temperature. The shape of the laminate substrate is retained when it is removed from the shaping fixture.

Abstract: A semiconductor device includes at least 4 conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines. First contact pads may be coupled to the respective ends of the conductive lines of two of the 4 conductive line groups in a first direction, and second contact pads may be coupled to the respective ends of the conductive lines of the remaining 2 of the 4 conductive line groups in a second direction opposite to the first direction.

Abstract: In a QFN that includes a die pad, a semiconductor chip mounted on the die pad, a plurality of leads arranged around the semiconductor chip, a plurality of wires that electrically connect the plurality of electrode pads of the semiconductor chip with the plurality of leads, respectively, and a sealing member sealing the semiconductor chip and the plurality of wires, first and second step portions are formed at shifted positions on the left and right sides of each of the leads to make the positions of the first and second step portions shifted between the adjacent leads. As a result, the gap between the leads is narrowed, thereby achieving the miniaturization or the increase in the number of pins of the QFN.

Abstract: Provided are: a circuit device demonstrating an improved connection reliability while being mounted; and a method for manufacturing the same. The circuit device of the present invention includes: an island; leads arranged around the island, each lead having a lower surface and a side surface exposed to the outside; and a semiconductor element mounted on the island and electrically connected to the leads through thin metal wires. Furthermore, the exposed end portion of the lead is formed to spread toward the outside. By forming the lead in this manner, the area where the lead comes into contact with a brazing filler material is increased, thus improving the connection strength therebetween.

Abstract: A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, barrier and pinned layers together form a layer stack that has a read current path that extends through the layer stack and that is not aligned with the write current path in the free layer.

Abstract: A microelectronic assembly can include a circuit panel having first and second surfaces and panel contacts at each surface, and first and second microelectronic packages having terminals mounted to the panel contacts at the first and second surfaces, respectively. The circuit panel can electrically interconnect terminals of the first package with corresponding terminals of the second package. Each package can include a substrate having first and second surfaces, a microelectronic element, conductive structure extending above a front face of the microelectronic element, and parallel columns of terminals at the second surface. The terminals of each package can include first terminals in a central region of the respective second surface and configured to carry address information usable by circuitry within the package to determine an addressable memory location within the respective microelectronic element.

Abstract: A microelectronic assembly can include a microelectronic package connected with a circuit panel. The package has a microelectronic element having a front face facing away from a substrate of the package, and electrically connected with the substrate through conductive structure extending above the front face. First terminals provided in first and second parallel grids or in first and second individual columns can be configured to carry address information usable to determine an addressable memory location from among all the available addressable memory locations of the memory storage array. The first terminals in the first grid can have signal assignments which are a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: A microelectronic package can include a microelectronic element having a face and a plurality of element contacts thereon, a substrate having first and second surfaces, and terminals on the second surface configured for connecting the package with at least one external component. The substrate can have substrate contacts on the first surface facing the element contacts of the microelectronic element and joined thereto. The terminals can include first terminals arranged at positions within first and second parallel grids. The first terminals of each grid can be configured to carry address information usable by circuitry within the microelectronic package to determine an addressable memory location from among all the available addressable memory locations of a memory storage array within the microelectronic element. The signal assignments of the first terminals in the first grid can be a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: A microelectronic assembly can include a circuit panel having first and second panel contacts at respective first and second surfaces thereof, and first and second microelectronic packages each having terminals mounted to the respective panel contacts. Each package can include a microelectronic element having a face and contacts thereon, a substrate having first and second surfaces, and terminals on the second surface configured for connecting the package with an external component. The terminals can include first terminals at positions within first and second parallel grids. The first terminals can be configured to carry address information usable by circuitry within the package to determine an addressable memory location from among all the available addressable memory locations of a memory storage array within the microelectronic element. Signal assignments of the first terminals in the first grid can be a mirror image of signal assignments of the first terminals in the second grid.

Abstract: A microelectronic package can include a substrate and a microelectronic element having a rear face facing a first surface of the substrate, a front face, and a column of element contacts extending in a first direction. The microelectronic element can include stacked electrically interconnected semiconductor chips. Edges of the microelectronic element can define an axial plane extending in the first direction and a third direction normal to the rear face. The package can include columns of terminals extending in the first direction at a second surface of the substrate. The terminals can include first terminals exposed in a central region of the second surface and configured to carry address information usable by circuitry within the package to determine an addressable memory location. The central region may have a width not more than 3.5 times a minimum pitch between adjacent terminal columns. The axial plane can intersect the central region.

Abstract: A microelectronic element having a memory storage array has a front face facing away from a substrate of a microelectronic package, and is electrically connected with the substrate through conductive structure extending above the front face. First terminals are disposed at locations within first and second parallel grids of the package. The first terminals of each grid are configured to carry address information usable to determine an addressable memory location from among all the available addressable memory locations of the memory storage array. The first terminals in the first grid have signal assignments which are a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: An integrated circuit leadframe device supports various chip arrangements. As consistent with various embodiments, a leadframe includes a plurality of banks of conductive integrated circuit chip connectors. Each bank has a plurality of conductive strips respectively having an end portion, the end portions of each of the strips in the bank being substantially parallel to one another and arranged at an oblique angle to end portions of strips in at least one of the other banks. Each of the end portions has a tip extending to an interior portion of the leadframe device and separated from the other tips by a gap.

Abstract: A semiconductor device includes a substrate, a first pad that is formed above the substrate, a second pad that is formed above the substrate, an external terminal that is connected with the second pad, and a circuit that judges whether or not the first pad is connected with the external terminal, wherein a distance between the first pad and a side of the substrate opposed to the external terminal is different from a distance between the second pad and the side.

Abstract: A package substrate including a conductive pattern disposed on a die attach surface of the package substrate; at least one bumping trace inlaid into the conductive pattern; and at least one gap disposed along with the bumping trace in the conductive pattern to separate the bumping trace from a bulk portion of the conductive pattern. The bumping trace may have a lathy shape from a plan view and a width substantially between 10 ?m and 40 ?m and a length substantially between 70 ?m and 130 ?m, for example.

Abstract: A bonded wire semiconductor device includes a sub-assembly including a semiconductor die having an active face with a set of internal electrical contact elements and an externally exposed set of electrical contact elements. A set of bond wires make respective electrical connections between the internal electrical contact elements and the externally exposed set of electrical contact elements. A molding compound encapsulates the semiconductor die with the active face embedded in the molding compound. The bond wires have the same length. The bond wires are bonded to the internal electrical contact elements and to the externally exposed electrical contact elements at first and second curved arrays and of bond positions respectively. The first and second curved arrays and of bond positions have corresponding concentric shapes.

Abstract: A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.

Abstract: A semiconductor device includes a substrate, a first pad, a second pad, and a third pad that are placed along one side of a perimeter of the substrate, a circuit that is formed above the substrate, and that is coupled to the first pad, a first external terminal that is coupled to the second pad, and a second external terminal that is coupled to the third pad, wherein the circuit generates a signal indicative of a connection configuration between the first pad and the first external terminal, wherein the third pad is placed adjacent to one of the first pad and the second pad, wherein, in a direction parallel to the one side of the perimeter of the substrate, the first pad, the second pad and the third pad have a first width, a second width and a third width, respectively, and wherein each of the first width of the first pad and the second width of the second pad is smaller than the third width of the third pad.

Abstract: Provided are a semiconductor device and a method of forming a semiconductor device in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using a double patterning.

Abstract: A multichip device, which achieves a normal operation and a testing operation without the needs for terminals dedicated for the testing and/or an interposer substrate, is provided. The peripheral chip also includes a switching unit for providing a switching between a normal mode that provides a first connection condition and a testing mode that provides a second coupling connection condition. The switching unit, in turn, provides connections of at least some of a plurality of outside terminals to the functional circuits, respectively, in the normal mode, and connects at least some of a plurality of outside terminals to the inside terminals in the testing mode. Thus, the normal operation and the testing operation can be carried out without the needs for the external terminals and/or the interposer substrate, which are employed for the purpose of only the testing.

Abstract: An object of the present invention is to reduce a lateral width of an FPC also with evenly aligned and arranged plurality of ICs. The liquid crystal display device according to the present invention includes a glass substrate, a plurality of ICs of COG (Chip On Glass) configuration aligned on a glass substrate along a side thereof, and an FPC (Flexible Printed Circuit) that is arranged to extend along the side of the glass substrate and that is connected to the plurality of ICs. Specified ICs from among the plurality of ICs are arranged in that extending directions of their longer sides are inclined with respect to an extending direction of the side of the glass substrate such that the longer sides face towards a central side of the FPC.

Abstract: Provided are a lead frame, semiconductor device, and methods of manufacturing the same. The lead frame may include a die pad having at least three pair of sides parallel with each other, and a plurality of inner leads spaced apart from a circumference of the die pad, arranged in a radial shape with respect to a center of the die pad, and having the ends form inner lead connection surfaces parallel with at least one pair of sides of the die pad. In addition, there may be provided a semiconductor device having the lead frame. Accordingly, a semiconductor chip may be positioned on a die pad. The plurality of inner leads may be electrically connected to the semiconductor chip through wires. The semiconductor device may further include a molding resin for surrounding top and bottom surfaces of the lead frame and filling in an interior thereof.

Abstract: A substrate of a micro-BGA package is revealed, primarily comprising a substrate core, a first trace, and a second trace where the substrate core has a slot formed between a first board part and a second board part. The first trace is disposed on the first board part and has a suspended inner lead extended into the slot where the inner lead has an assumed broken point. The second trace is disposed on the second board part and is integrally connected to the inner lead at the assumed broken point. More particularly, a non-circular through hole is formed at the assumed broken point and has two symmetric V-notches away from each other and facing toward two opposing external sides of the inner lead so that the inner lead at two opposing external sides does not have the conventional V-notches cutting into the inner lead from outside. Moreover, the inner lead will not unexpectedly be broken and the inner lead can easily and accurately be broken at the assumed broken point during thermal compression processes.

Abstract: An integrated circuit package system includes: fabricating a lead frame including: providing inner leads having an inner lead pitch of progressive length, forming a lead shoulder, on the inner leads, having a shoulder height of a progressive height, and forming outer leads coupled to the lead shoulder and the inner leads; mounting an integrated circuit die on the lead frame; and molding a package body on the lead frame and the integrated circuit die.

Abstract: A light emitting device includes a first lead and a second lead. The first lead has a top surface which a light emitting element is mounted thereon and a bottom surface opposed to the top surface. The second lead has a lead peripheral region where a wire connected to an electrode of the light emitting element is bonded therewith. The first lead includes a lead middle region where the semiconductor light emitting element is mounted thereon to thermally conduct therewith. A bottom surface of the lead middle region is exposed from a package. The second lead has an outer lead region that is projected outwardly from the both side surfaces of the package. The bottom surface of the first lead middle region is substantially coplanar with a bottom surface of the outer lead region.

Abstract: An integrated circuit package system is provided including forming a first substrate, mounting a first integrated circuit to the first substrate, and forming first planar interconnects in contact with the first integrated circuit and electrically connecting the first integrated circuit to the first substrate.

Abstract: A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, barrier and pinned layers together form a layer stack that has a read current path that extends through the layer stack and that is not aligned with the write current path in the free layer.

Abstract: A thin, small outline IC leadframe plastic package to be used to assemble high performance, high speed semiconductor memory IC devices such as dynamic random access memories (DRAM) having a high data transfer rate in the range of 1 GigaHertz. The package leadframe is electrically interconnected to the IC device input-output pads by either electrically conductive (e.g. solder) bumps that are flip-chip bonded to the IC device or by of an interposer. The interposer contains integral curled micro-spring contacts at opposite ends of conductive fan out traces. The interposer is attached to the leadframe bonding pads by way of tape automated bonding, soldering, or adhesive bonding. The leadframe that is interconnected to the IC device by the aforementioned flip-chip bumps or the interposer is encapsulated and trimmed to form either gull-wing style perimeter leads as a standard thin small outline package (TSOP) or wrap around leads as a micro-leadframe (MLF) package.

Abstract: A semiconductor device according to the present invention includes first through fourth internal terminals placed along the perimeter of a substrate, a circuit coupled to the first internal terminal, a first external terminal coupled to the second internal terminal, a second external terminal coupled to the third internal terminal, and a third external terminal coupled to the fourth internal terminal. The circuit outputs a signal indicative of a connection state the first internal terminal and the first external terminal. A distance between centers of the first and second internal terminals is L1 in a direction parallel to one side of the substrate beside which the first external terminal is placed. A distance between centers of the third and fourth internal terminals is L2 in a direction parallel to one side of the substrate beside which the second and third external terminals are placed. The distance L1 is set smaller than the distance L2.

Abstract: Fan-out wafer level packaging includes an integrated circuit having a top surface, a bottom surface and a bond pad defined on the top surface, and a substrate having a cavity. An adhesive layer is positioned between a top surface of the cavity and the bottom surface of the integrated circuit, and a bump is positioned proximate a top surface of the fan-out wafer level packaging, the bump spaced apart from the integrated circuit. A redistribution layer is configured to electrically couple the bond pad of the integrated circuit to the bump.

Abstract: A QFN integrated circuit is mounted on a leadframe having multiple lead lands and resin material encapsulates the integrated circuit leaving the lead lands exposed. Subsequently a sawing operation divides the lead lands into multiple leads, and the leadframe and resin material are partitioned to form packages. The pitch of the resultant leads is not limited by the pitch of the lead lands of the leadframe, so the leadframe can be of the relatively cheap generic leadframe variety, in which the pitch of the lead lands is higher than the desired pitch of the leads of the completed package. The sawing operation may further include reshaping the diepad area of the leadframe to produce heat sink fins, for improved heat dissipation. The proposed process is suitable both to produce packages including only a single integrated circuit, and also to produce multi-chip modules.

Abstract: A package system for integrated circuit (IC) chips and a method for making such a package system. The method uses a solder-ball flip-chip method for connecting the IC chips onto a lead frame that has pre-formed gull-wing leads only on the source/gate side of the chip. A boschman molding technique is used for the encapsulation process, leaving exposed land and die bottoms for a direct connection to a circuit board. The resulting packaged IC chip has the source of the chip directly connected to the lead frame by solder balls. As well, the drain and gate of the chip are directly mounted to the circuit board without the need for leads from the drain side of the chip.

Abstract: A micro device that is manufactured by semiconductor process and is electrically connected to outside for its operation. The micro device includes a circuit board, an electrode pad being provided on the circuit board, a lead substrate being provided substantially parallel to the circuit board, and a lead of conductive member being electrically connected to the electrode pad by being bent in a direction away from a surface of the lead substrate, one end of the lead being adhered to the lead substrate and the other end being a free end.

Abstract: A surface mount electronic chip (10) is mounted on a holder (70) and electrically connected to holder terminals (74,76, 80) by the use of a carrier device (30). The carrier device has clips (36) mounted on walls of the carrier frame. The chip is merely pressed into a cavity (48) between inner tabs (44) of the chips. The carrier with the chip in place is merely pressed into a cradle (78) formed in the holder by the holder terminals, so outer tabs (46) of the clips press against the holder terminals.

Abstract: A semiconductor device includes: a substrate; a semiconductor element mounted on the substrate; a sealing structure for sealing the semiconductor element, the sealing structure being mounted on the substrate; and an adhesive for bonding the sealing structure and the substrate, wherein the sealing structure has a groove for storing the adhesive.

Abstract: This invention discloses a fan-out wire structure for use in a display panel of a display device. The fan-out wire structure comprises a first metal layer, a first insulation layer, and a second metal layer. The first insulation layer is formed on the first metal layer and the second metal layer is formed on the first insulation layer, and the first metal layer and the second metal layer are electrically connected by a conductive material, so as to modulate the resistance of the fan-out wire structure by modulating the length of the second metal layer and the conductive material.

Abstract: A lead frame structure is provided, which includes a die pad having a first mounting portion and a second mounting portion separated from the first mounting portion by a gap. The first and second mounting portions are formed with corresponding blocking surfaces bordering the gap, so as to allow a flow rate of an encapsulating resin flowing through the gap during a molding process to be reduced by the blocking surfaces, such that different portions of the encapsulating resin respectively flowing above, in and below the die pad can have substantially the same flow rate, thereby preventing bonding wires from being deformed to cause short circuit and avoiding formation of voids. A semiconductor package with the lead frame structure is also provided.

Abstract: A heat conductivity and brightness enhancing structure for light-emitting diode, including a bracket having a cathode leg support. A bowl structure is formed on upper end of the cathode leg support for resting a light-emitting chip therein. At least one depression is formed on a bottommost section of the bowl for receiving an adhesive therein. The depression has a diameter or area smaller than the bottom face of the chip. The adhesive is filled into the depression for adhering one or more chip. The other portions of the bottom face of the bowl, which contact with the chip is free from the adhesive and can achieve good heat conduction and radiation effect. At least one column hole is formed in the cathode leg support from a hollow section of the bottom of the bracket to the depression of the bowl. During manufacturing procedure, the adhesive can be heated, molten and exhausted from the column hole. The column hole serves as a passage for air convection, whereby the heat generated by the chip can be dissipated.

Abstract: A memory device includes a semiconductor substrate having a surface, a plurality of first and second conductive lines, a plurality of memory cells, and a plurality of landing pads. Each of the first conductive lines has a line width wb and two neighboring ones of the first conductive lines having a distance bs from each other. Each of the second conductive lines has a line width wl and two neighboring ones of the second conductive lines having a distance ws from each other. Each memory cell is accessible by addressing corresponding ones of said first and second conductive lines. Each of the landing pads are made of a conductive material and are connected with a corresponding one of said second conductive lines.

Abstract: Inner layer traces on a multilayer printed wiring board are exposed to enable direct interconnection with another device such as a printed wiring board. The traces may be exposed by removing at least some of the dielectric substrate material around the traces, or by extending the traces beyond the other layers of the printed wiring board. Corresponding conductors associated with the other device are placed in direct physical contact with the exposed inner layer traces, and may be aligned and secured with guide plates, alignment pins and spring members. Such direct connection mitigates the need for vias, and has more favorable electrical characteristics for high frequency signal transmission.

Abstract: A circuit package may include an upper surface of first conductive elements and second conductive elements. The first conductive elements may receive input/output signals from respective conductive elements of an integrated circuit die, and the second conductive elements may receive a first plurality of the input/output signals from respective ones of the first conductive elements. A lower surface of the package may include third conductive elements, the third conductive elements to receive a second plurality of the input/output signals from respective other ones of the first conductive elements.

Abstract: The elevated heat dissipating device of the present invention comprises a thermal substrate connecting onto a heat source and at least one heat conductive pipe connecting to the thermal substrate. The heat conductive pipe further comprises a connecting part connected to a top portion of the thermal substrate, and a bending part which is bended and extended upward away from the thermal substrate. A plurality of sets of heat fins connecting to end portions of the bending part of the heat conductive pipe are supported and elevated by the heat conductive pipe so that an air space is formed between the thermal substrate and the sets of heat fins. A fan locating on a top part of the heat fins, wherein a plurality of air passages are formed in between those heat fins so that cool air ventilates from the fan through the air passages of the heat fins to the thermal substrate.

Abstract: A QFN integrated circuit is mounted on a leadframe having multiple lead lands and resin material encapsulates the integrated circuit leaving the lead lands exposed. Subsequently a sawing operation divides the lead lands into multiple leads, and the leadframe and resin material are partitioned to form packages. The pitch of the resultant leads is not limited by the pitch of the lead lands of the leadframe, so the leadframe can be of the relatively cheap generic leadframe variety, in which the pitch of the lead lands is higher than the desired pitch of the leads of the completed package. The sawing operation may further include reshaping the diepad area of the leadframe to produce heat sink fins, for improved heat dissipation. The proposed process is suitable both to produce packages including only a single integrated circuit, and also to produce multi-chip modules.

Abstract: A semiconductor integrated circuit device includes a semiconductor chip having a memory cell array region surrounded with a peripheral circuit region and includes a plurality of bonding pads disposed at least in one row on only one side of the semiconductor chip. The circuit device may include first leads group disposed adjacent to the bonding pad side and a second leads group disposed opposite the first leads group. The second leads group may be formed over a portion of the semiconductor chip (lead-on-chip structure). A plurality of bonding wires connect the first and second leads group with the plurality of bonding pads respectively.