Abstract: Disclosed is a production method of a multi-layered printed wiring board, including the following steps 1 to 3: Step 1: a step of laminating, on a substrate with inner layer circuit, a metal foil with adhesive layer including a support, a metal foil having a thickness of 3 ?m or less and ? or less relative to the thickness of the inner layer circuit, and an organic adhesive layer having a thickness of 10 ?m or less in this order, via an organic insulating resin layer such that the organic insulating resin layer and the organic adhesive layer are opposed to each other, and then releasing the support to form a laminated sheet (a) having the metal foil as an outer layer metal foil layer; Step 2: a step of irradiating the laminated sheet (a) with a laser to bore the outer layer metal foil layer, the organic adhesive layer, and the organic insulating resin layer to form a bored laminated sheet (b) having a blind via hole; and Step 3: a step of forming an outer layer circuit connected with the inner layer circui

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor die, an insulating encapsulation laterally encapsulating the first semiconductor die, an electromagnetic shielding structure enclosing the first semiconductor die and a first portion of the insulating encapsulation, and a redistribution structure. The electromagnetic shielding structure includes a first conductive layer and a dielectric frame laterally covering the first conductive layer. The first conductive layer surrounds the first portion of the insulating encapsulation and extends to cover a first side of the first semiconductor die. The dielectric frame includes a first surface substantially leveled with the first conductive layer.

Abstract: An example electrical and liquid coolant midplane includes an electrical midplane having a ring bus bar assembly, a liquid coolant manifold, and a heat transfer device. The ring bus bar assembly is to receive power from power supply units of the computing system and provide the power to computing components installed in the computing system. The liquid coolant manifold includes four segments connected together as a rectangular ring, the liquid coolant manifold including first liquid connectors facing in a first direction and second liquid connectors facing in a second direction opposite the first direction. The heat transfer device is in contact with the ring bus bar assembly and one of the segments of the liquid coolant manifold, to thermally couple the ring bus bar assembly with the manifold to provide liquid cooling to the ring bus bar assembly.

Abstract: An object is to provide a technique capable of increasing a heat radiation property in radiating a heat generated in a shunt resistance. A semiconductor device includes: a container body having a space with an opening; a semiconductor chip, a shunt resistance, and a circuit pattern disposed in the space in the container body; a partition member; a first cover; and a second cover. The partition member separates the space in the container body into a first space and a second space. The first cover covers a part of the opening corresponding to the first space, and the second cover covers a part of the opening corresponding to the second space. At least one hole through which the second space and outside of the container body are communicated with each other is formed in the second cover or by the second cover.

Abstract: Disclosed is a method for manufacturing a thin film transistor, and a thin film transistor, relating to the technical field of liquid crystal display.

Abstract: In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

Abstract: A heat spreading lid, including a lid body, a wing portion, where the wing portion flexibly moves independently from the lid body.

Abstract: A complex device that integrates a beam shaping aperture in a printed circuit board of the complex device (e.g., scanner or barcode reader or optical module) is provided. The complex device has a light-emitting diode pattern projection system. The pattern projection system includes one or more light-emitting diodes and a printed circuit board. The printed circuit board has one or more apertures and one or more receptacles. The one or more receptacles are positioned behind the aperture and receive the one or more light-emitting diodes. The printed circuit board with receptacle offer self-alignment for the light emitting diodes. The beam shaping aperture in front of the light-emitting diodes allows light to pass through the aperture that is part of the printed circuit board layer of the complex device.

Abstract: Provided is a laser apparatus and a light source apparatus that can reduce the footprint and realize space-saving. The laser apparatus has a bottom plate; a semiconductor laser element mounted on the bottom plate; and a terminal unit that is provided so as to face upward with respect to the bottom plate and enables external electrical connection.

Abstract: An integrated circuit package having excellent heat dissipation is described. An integrated circuit die is attached to a substrate and the substrate is mounted on a printed circuit board (PCB) wherein there is a gap between a surface of the die facing the PCB and the PCB. A thermal enhanced layer is formed within the gap wherein heat travels from the die through the thermal enhanced layer to the PCB.

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Abstract: A packaged device, having a package, including a first dissipative region, a second dissipative region, a first connection element and a second connection element. A die of semiconductor material is arranged within the package, carried by the first dissipative region. The first and second dissipative regions extend at a distance from each other, and the first and second connection elements extend at a distance from each other between the first and second dissipative regions. The first dissipative region, the second dissipative region, the first connection element, and the second connection element are hollow and form a circuit containing a cooling liquid.

Abstract: A filler for a heat transfer member includes: a core material which is made of an inorganic material or metal material having a thermal conductivity of 15 W/mK or more, and transfers heat; and an insulating film which includes a silicon oxide film and a diamond-like carbon film having electrical insulation properties, and covers the core material. The dielectric breakdown voltage of the filler is 500 V or more.

Abstract: A circuit module (301) includes a first substrate (201), a first module (101), a sealing resin portion (3), and a conductive material film (7). The first substrate (201) has a first principal surface (201a). The first module (101) is mounted on the first principal surface (201a). The sealing resin portion (3) is formed on the first principal surface (201a) and covers the first module (101). The conductive material film (7) covers a side of the sealing resin portion (3). The first module (101) includes a conductive material portion and a device which may produce heat and which is mounted on the conductive material portion. The conductive material portion connects with the conductive material film (7) on the side of the sealing resin portion (3).

Abstract: Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a plurality of first semiconductor dies arranged in a stack and a second semiconductor die carrying the first semiconductor dies. The second semiconductor die can include a peripheral portion that extends laterally outward beyond at least one side of the first semiconductor dies. The semiconductor die assembly can further include a thermal transfer feature at the peripheral portion of the second semiconductor die. The first semiconductor dies can define a first thermal path, and the thermal transfer feature can define a second thermal path separate from the first semiconductor dies.

Abstract: Thermal management technology is disclosed. A thermal management component in accordance with the present disclosure can comprise a heat spreader having a plurality of microchannels. The thermal management component can also comprise a plurality of fins directly coupled to the heat spreader to provide surface area for heat transfer. In another aspect, a thermal management component can comprise a heat spreader having a plurality of microchannels, and an inlet port and an outlet port in fluid communication with the plurality of microchannels. The thermal management component can also comprise a plurality of fins coupled to the heat spreader to provide surface area for heat transfer. Additionally, the thermal management component can comprise a fluid conduit thermally coupled to the plurality of fins and fluidly coupled to the outlet port and the inlet port to facilitate flow of a heat transfer fluid through the microchannels and the fluid conduit.

Abstract: An air cavity package having a supplemental heat generator for generating heat and a pressure greater than atmospheric pressure within the air cavity package. The supplemental heat generator may be maintained at a constant or variable temperature. The supplemental heat generator may be selectively activated based on a predetermined parameter by a user or by a processor. The supplemental heat generator may be an RF and or other chip capable of generating heat or a conductive wire.

Abstract: An MCM-HIC device flexibly adds enhanced features to a VLSI “core” IC that are not directly supported by the core IC, such as unsupported communication protocols and/or support of cold spare operation. The core IC is mounted on an interconnecting substrate together with at least one “chiplet” that provides the required feature(s). The chiplet can be programmable. The chiplet can straddle a boundary of an interposer region of the substrate that provides higher density interconnections at lower currents. The disclosed method can include selecting a core IC and at least one active, passive, or “mixed” chiplet, configuring a substrate, and installing the core IC and chiplet(s) on the substrate. In embodiments, the core IC and/or chiplet(s) can be modified before assembly to obtain the desired result. Cost can be reduced by pre-designing and, in embodiments, pre-manufacturing the chiplets and modified core ICs in cost-effective quantities.

Abstract: Embodiments describe a semiconductor package that includes a substrate, a die bonded to the substrate, and a solder paste overmold layer formed over a top surface of the die. In an embodiment, the solder paste comprises a high-melting point metal, a solder matrix, intermetallic compounds and a polymer. The overmold layer has a high elastic modulus, a coefficient of thermal expansion similar to the substrate, and reduces the warpage of the package. In an embodiment, interconnects of a semiconductor package are formed with a no-slump solder paste that includes vents. Vents may be formed through a conductive network formed by the high-melting point metal, solder matrix and intermetallic compounds. In an embodiment, vents provide a path through the interconnect that allows for moisture outgassing. In an embodiment, a mold layer may be mechanically anchored to the interconnects by the vents, thereby providing improved mechanical continuity to the mold layer.

Abstract: This document discusses, among other things, a multi-layer molded substrate having layers with a graded coefficients of thermal expansions (CTEs) to optimize thermal performance of the multi-layer molded substrate with first and second structures attached to top and bottom surfaces of the multi-layer molded substrate, respectively.

Abstract: An electronic device having a shield structure is disclosed. The shield structure includes a conductive heat diffusion plate that is provided in a position facing a mounting surface of an electronic circuit board on which electronic components, such as a CPU, are mounted, and diffuses heat generated from the CPU, etc.; and a conductive sponge-like member that is firmly fixed to at least either the mounting surface of the electronic circuit board or a surface of the conductive heat diffusion plate which faces the mounting surface of the electronic circuit board, and is provided to separate the CPU, etc. which generate electromagnetic wave noise from antennas.

Abstract: Devices and methods disclosed herein can include a conductive foam having pores disposed within the conductive foam. The conductive foam can be compressible between an uncompressed thickness and a compressed thickness. The compressed thickness can be ninety-five percent or less of the uncompressed thickness. In one example, a filler can be disposed in the pores of the conductive foam. The filler can include a first thermal conductivity. The first thermal conductivity can be greater than a thermal conductivity of air.

Abstract: A manufacturing method of a chip package structure is provided. Firstly, a conductive frame including a bottom plate and a plurality of partition plates is provided. The bottom plate has a supporting surface and a bottom surface opposite thereto, and the partition plates protrude from the supporting surface to define a plurality of the accommodating regions. Subsequently, a plurality of chips is provided, and each of the chips is correspondingly accommodated in each of the accommodating regions with a back surface facing to the supporting surface. Thereafter, the conductive frame is cut to form a plurality of separated chip package structures.

Abstract: A heat sink can be attached to a heat-producing electronic device by aligning an adhesive material to a surface of the heat sink, applying the adhesive material to the surface to form an outer perimeter and applying, within the outer perimeter, a thermally conductive material to the surface. The surface of the heat sink and a surface of the heat-producing electronic device can then be aligned, and the heat sink can be assembled to the heat-producing electronic device by bringing the heat-producing electronic device surface into contact with the adhesive material. The heat sink can then be affixed to the heat-producing electronic device by applying a compressive force to the assembly to activate the adhesive material.

Abstract: A semiconductor device includes a first semiconductor element, a first heat dissipation plate connected to the first semiconductor element, a sealing body that integrally holds the first semiconductor element and the first heat dissipation plate, and a first terminal that is electrically connected to the first semiconductor element and protrudes from the sealing body. The first heat dissipation plate has an insulating substrate, an inner conductor layer, and an outer conductor layer. The outer conductor layer is exposed on a first main surface of the sealing body. The first terminal protrudes from a first side surface adjacent to the first main surface of the sealing body. On the first main surface of the sealing body, at least one first groove extending in a direction along the first side surface is provided in a range located between the outer conductor layer and the first side surface.

Abstract: A package structure includes a metal carrier, a conductive adhesive layer disposed on the metal carrier, a conductive post disposed on the conductive adhesive layer, a semiconductor chip disposed on the conductive adhesive layer and laterally spaced from the conductive post, and a redistribution layer disposed on the conductive post and the semiconductor chip. The semiconductor chip includes a first terminal at an upper surface of the semiconductor chip. The first terminal of the semiconductor chip is electrically connected to the bottom surface of the semiconductor chip through the redistribution layer, the conductive post and the conductive adhesive layer.

Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.

Abstract: An electronic package that includes a substrate and a die attached to the substrate. The electronic package further includes a stiffener that is attached to the substrate adjacent to the die. The stiffener is formed of a first layer made from one material and a second layer made from a different material.

Abstract: A package includes a bottom substrate and a bottom die over and bonded to the bottom substrate. A metal-particle-containing compound material is overlying a top surface of the bottom die, wherein the metal-particle-containing compound material comprises metal particles. A molding material molds at least a lower part of the bottom die therein, wherein the molding material is overlying the bottom substrate.

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Abstract: Methods and apparatus are described for heat management in an integrated circuit (IC) package using a lid with recessed areas in the inner surfaces of the lid. The recessed areas (e.g., trenches) provide receptacles for accepting a portion of a thermal interface material (TIM) that may be forced out when the lid is positioned on the TIM above one or more integrated circuit (IC) dies during fabrication of the IC package. In this manner, the TIM bond line thickness (BLT) between the lid and the IC die(s) may be reduced for decreased thermal resistance, but sufficient interfacial adhesion is provided for the IC package with such a lid to avoid TIM delamination.

Abstract: A semiconductor module includes a case. The case includes a bottom part, a case frame, and a case lid. An inner electrode and a stud bolt are provided inside the case. A head part of the stud bolt is tapered, and a tubular part has an inner diameter that increases downward so as to keep a constant distance from the sides of the head part. With this structure, even if the stud bolt is pulled up, the tubular part can hold down the head part. Therefore, the stud bolt can be prevented from being loosened or detached by the force applied from a terminal fixing screw when an external connection terminal is attached or removed.

Abstract: A power distribution connector is provided, which includes an electrically conductive bus bar configured to conduct electricity between a power-supplying node and an opposing power-consuming node, and has a set of surfaces between the opposing nodes and a thermally conductive polymer having a first surface abutting at least a portion of a subset of the bus bar surfaces and a second surface spaced from the first surface.

Abstract: A power tool and a printed circuit board assembly (“PCBA”) for the power tool. The PCBA includes, for example, a printed circuit board (“PCB”), a heat sink, a spacer between the PCB and the heat sink, and a gap pad. The PCB and the heat sink are fastened to one another via fasteners so the spacer absorbs excess forces torsional forces from torques applied to the fasteners. The gap pad is placed within an opening or recess of the spacer to contact one or more FETs on the PCB. In some embodiments, the PCBA includes a second heat sink or rigid member on the opposite side of the PCB than the spacer to further distribute excess torsional forces from torques applied to the fasteners.

Abstract: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.

Abstract: Conductive clip connection arrangements for semiconductor packages are disclosed. Some examples provide electrically conductive clip connection arrangements for semiconductor packages that improve electrical performance and fabrication reliability while maintaining compatibility with existing quality control processes. Some examples provide innovative conductive clip structures and die pad arrangements that broaden the range of options available for tailoring the physical configurations of one or more of the constituent conductive clips and/or die pads to achieve specific electrical performance targets.

Abstract: A lamp is disclosed, which has a lamp housing, having an end wall and a side wall, a lighting means device arranged in a housing interior having a lighting means carrier and at least one lighting means arranged thereon, an insulation component formed from an electrically insulating material having a main portion and an edging portion, wherein the main portion is arranged between the end wall and the lighting means device and wherein the edging portion extends from the main portion in such a way that the edging portion is arranged between the lighting means device and the side wall of the lamp housing.

Abstract: A microchip has a rear face attached to a front mounting face of a support plate. An encapsulation cover for the microchip is mounted to the support plate. The encapsulation cover includes a front wall, a peripheral wall extending from the front wall and an inside partition extending from the front wall and between opposite sides of the peripheral wall. The inside partition passes locally above the microchip to delimit two cavities. A bonding material is interposed between encapsulation cover and the support plate and microchip. An end part of the inside partition of the cover, adjacent to the front face of the microchip, include an accumulation and containment recess that is configured to at least partly receive the bonding material.

Abstract: An integrated circuit chip is mounted to a front face of a support plate. An encapsulation cap in then mounted to the support plate. The encapsulation cap includes a front wall and a peripheral wall having an end edge at least partly facing a peripheral zone of the support plate. The support plate and the encapsulation cap delimit a chamber in which the integrated circuit chip is situated. To mount the encapsulation cap, a bead of glue is inserted between the peripheral zone and the end edge of the peripheral wall of the encapsulation cap. A peripheral outer face of the encapsulation cap includes a recess extending from the end edge which locally uncovers a part of the bead of glue. A local hardening of the glue at the recess is performed as a first attachment step. Further hardening of the remainder of the glue is then performed.

Abstract: An electronic package that includes a substrate; a die attached to the substrate; an underfill positioned between the die and the substrate due to capillary action; a first support adjacent to the die and attached to the substrate; and a second support mounted on the first support, wherein the second support is closer to the die than the first support, wherein first support surrounds the die and the second support surrounds the die, and wherein the second support is a different material than the first support. The die may be flip chip bonded to the substrate and the underfill may secure the die to the substrate. The first support may be attached to the substrate using an adhesive and the second support may be attached to the first support using an adhesive.

Abstract: The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Abstract: A method for forming a matrix composite layer on a workpiece and a workpiece with a matrix composite layer are disclosed. In an embodiment the method includes forming a wall around a metallic surface such that the wall extends in a vertical direction from a plane formed by the metallic surface, and depositing a filler material in a walled area on the metallic surface. The method further includes depositing a plastic material on the filler material and performing a vacuum treatment of the filler material and the plastic material thereby forming a matrix composite layer disposed on the metallic surface.

Abstract: Described herein are microelectronics packages and methods for manufacturing the same. The microelectronics package may include a first die, a second die, and an integrated heat spreader. The integrated heat spreader may include a first surface. The first surface may define a first indentation located in between the first die and the second die.

Abstract: A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

Abstract: A semiconductor device comprises a first semiconductor package including a conductive layer. A substrate including an interconnect structure is disposed over the conductive layer. The interconnect structure of the substrate with the conductive layer of the first semiconductor package are self-aligned. A plurality of openings is formed in the substrate. An adhesive is disposed between the substrate and the first semiconductor package and in the openings of the substrate. A redistribution layer (RDL) is formed over the first semiconductor package opposite the substrate. A pitch of the substrate is different from a pitch of the RDL. The adhesive extends to the interconnect structure of the substrate. A second semiconductor package is disposed over the substrate and the first semiconductor package.

Abstract: A circuit package comprises a circuit device in a first epoxy mold compound and a second epoxy mold compound of different compositions.

Abstract: The present disclosure provides a two component releasable thermal gel that is useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The two component releasable thermal gel is mixed before the point of application and facilitates catalytic cross-linking. The thermal gel includes a first component including a primary silicone oil, an inhibitor, a catalyst, and at least one thermally conductive filler, and a second component including a primary silicone oil, a cross linking silicone oil, and at least one thermally conductive filler, wherein the ratio of total content of Si—H groups to total content of vinyl groups in the thermal gel is between 0.03 to 10. The thermal gel is releasable from a substrate upon which the thermal gel is applied.

Abstract: A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11?c25 and c11?c13?c12.

Abstract: An assembly includes at least one heat emitting device and a continuous conformal cooling structure adhering directly to and conforming with surfaces of at least a portion of the at least one heat emitting device. The cooling structure may include a thermally-conductive, electrically-insulative layer adhering directly to surfaces of the at least one heat generating device to provide an electrically nonconductive, continuous, conformal layer covering all such surfaces. An inner metallization layer may be adhered directly to surfaces of at least a portion of the insulative layer. An outer metallization layer may be adhered directly to surfaces of the inner metallization layer to provide a thermally conductive layer covering such surfaces.

Abstract: A heat sink comprising pin fins extending from a base plate of the heatsink. Some of the pin fins are angled outwardly towards an outer edge of the base plate such that the tips of some of the pin fins may extend beyond the outer edge of the base plate. The distance the outer pin fins extend beyond the outer edge of the base plate can correspond to a maximum diameter of the heatsink. The maximum diameter of the heatsink can be greater than the diameter of the base plate of the heatsink.