For Compound Semiconductor Material Patents (Class 257/744)
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Patent number: 11705386Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.Type: GrantFiled: February 17, 2022Date of Patent: July 18, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang Wuk Park, Sung Dong Cho, Eun Ji Kim, Hak Seung Lee, Dae Suk Lee, Dong Chan Lim, Sang Jun Park
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Patent number: 11165005Abstract: The invention relates to a method for producing a first microelectronic chip including a layer of interest having a connection face, intended to be hybridized with a second microelectronic chip. The method including depositing a layer of adhesive on a face of the layer of interest opposite to the first connection face and fastening a handle layer to the layer of adhesive. The method also includes, prior to the steps of depositing the adhesive and fastening the handle layer, defining, on the one hand, a maximum thickness eccmax and a minimum value Eccmin and a maximum value Eccmax of the Young's modulus for the layer of adhesive, and, on the other hand, the minimum thickness ecpmin for the handle layer.Type: GrantFiled: October 16, 2017Date of Patent: November 2, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Adrien Gasse, David Henry, Bertrand Chambion
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Patent number: 10446718Abstract: A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.Type: GrantFiled: November 11, 2017Date of Patent: October 15, 2019Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Jin Wang, Yi-an Lu, Chun-Yi Wu, Ching-Shan Tao, Duxiang Wang
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Patent number: 10340204Abstract: The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.Type: GrantFiled: February 27, 2017Date of Patent: July 2, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Wan Kim, Jung-Hoon Han, Dong-Sik Park
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Patent number: 10008627Abstract: A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.Type: GrantFiled: August 5, 2016Date of Patent: June 26, 2018Assignee: RICOH COMPANY, LTD.Inventors: Shunichi Sato, Nobuhiko Nishiyama
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Patent number: 9911900Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.Type: GrantFiled: May 9, 2016Date of Patent: March 6, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9607949Abstract: A semiconductor device includes a first semiconductor unit including a plurality of first semiconductor chips, an organic resin provided between the first semiconductor chips, a wiring layer provided above the first semiconductor chips to electrically connect the first semiconductor chips to each other, and a plurality of connecting terminals provided on an upper portion of the wiring layer and a second semiconductor unit fixed to a wiring layer side of the first semiconductor unit, the second semiconductor unit fixed to a region sandwiched between the connecting terminals, the second semiconductor unit having a second semiconductor chip, the second semiconductor unit electrically connected to the first semiconductor unit.Type: GrantFiled: March 9, 2015Date of Patent: March 28, 2017Assignee: Kabushiki Kaisha ToshibaInventor: Hiroshi Yamada
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Patent number: 9450138Abstract: A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.Type: GrantFiled: November 25, 2013Date of Patent: September 20, 2016Assignee: RICOH COMPANY, LTD.Inventors: Shunichi Sato, Nobuhiko Nishiyama
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Patent number: 9000488Abstract: A semiconductor device includes: an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a ? doping area having an n-type impurity doped in a sheet-shaped region, the ? doping area being formed on the n-type semiconductor layer; and a barrier layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the ? doping area.Type: GrantFiled: July 19, 2013Date of Patent: April 7, 2015Assignee: Fujitsu LimitedInventor: Akira Endoh
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Patent number: 8975759Abstract: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175-C is 2000 Pa or more.Type: GrantFiled: September 13, 2012Date of Patent: March 10, 2015Assignee: Nitto Denko CorporationInventors: Sadahito Misumi, Takeshi Matsumura, Kazuhito Hosokawa, Hiroyuki Kondo
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Publication number: 20150048506Abstract: A memory device and a manufacturing method of the same are provided. The memory device includes a substrate, a 3D memory array, a periphery circuit, and a conductive connection structure. The 3D memory array and the periphery circuit are stacked on the substrate. The periphery circuit includes a patterned metal layer and a contact structure electrically connected to the patterned metal layer. The conductive connection structure is electrically connected to the patterned metal layer. The 3D memory array is electrically connected to the periphery circuit via the conductive connection structure.Type: ApplicationFiled: August 13, 2013Publication date: February 19, 2015Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Yi-Hsuan Hsiao, Yen-Hao Shih, Shih-Hung Chen, Hang-Ting Lue
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Patent number: 8946780Abstract: A semiconductor device includes a first layer and a second layer over the first layer. The first and second layers are configured to form an electron gas layer at an interface of the first and second layers. The semiconductor device also includes an Ohmic contact and multiple conductive vias through the second layer. The conductive vias are configured to electrically couple the Ohmic contact to the electron gas layer. The conductive vias could have substantially vertical sidewalls or substantially sloped sidewalls, or the conductive vias could form a nano-textured surface on the Ohmic contact. The first layer could include Group III-nitride nucleation, buffer, and channel layers, and the second layer could include a Group III-nitride barrier layer.Type: GrantFiled: March 1, 2011Date of Patent: February 3, 2015Assignee: National Semiconductor CorporationInventors: Sandeep R. Bahl, Richard W. Foote, Jr.
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Patent number: 8941123Abstract: A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer, and a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, where the metal-semiconductor alloy region electrically connects two or more of the isolated devices.Type: GrantFiled: May 30, 2013Date of Patent: January 27, 2015Assignee: International Business Machines CorporationInventors: Guy Cohen, Cyril Cabral, Jr., Anirban Basu, Jr.
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Publication number: 20150001555Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.Type: ApplicationFiled: September 17, 2014Publication date: January 1, 2015Inventors: Anh Duong, Tony Chiang, Zachary M. Fresco, Nitin Kumar, Chi-I Lang, Jinhong Tong, Anna Tsizelmon
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Publication number: 20140353826Abstract: A silicidation blocking process is provided. In one aspect, a silicidation method is provided. The method includes the following steps. A wafer is provided having a semiconductor layer over an oxide layer. An organic planarizing layer (OPL)-blocking structure is formed on one or more regions of the semiconductor layer which will block the one or more regions of the semiconductor layer from silicidation. At least one silicide metal is deposited on the wafer. The wafer is annealed to react the at least one silicide metal with one or more exposed regions of the semiconductor layer. Unreacted silicide metal is removed. Any remaining portions of the OPL-blocking structure are removed.Type: ApplicationFiled: August 28, 2013Publication date: December 4, 2014Applicant: International Business Machines CorporationInventors: Michael A. Guillorn, Isaac Lauer, Jeffrey W. Sleight
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Patent number: 8890193Abstract: A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.Type: GrantFiled: November 16, 2012Date of Patent: November 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Katsuno, Yasuo Ohba, Kei Kaneko, Mitsuhiro Kushibe
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Patent number: 8884343Abstract: A system in package and a method for manufacturing the same is provided. The system in package comprises a laminate body having a substrate arranged inside a laminate body. A semiconductor die is embedded in the laminate body and the semiconductor is bonded to contact pads of the substrate by help of a sintered bonding layer, which is made from a sinter paste. Lamination of the substrate and further layers providing the laminate body and sintering of the sinter paste may be performed in a single and common curing step.Type: GrantFiled: February 19, 2013Date of Patent: November 11, 2014Assignee: Texas Instruments IncorporatedInventors: Bernhard Lange, Juergen Neuhaeusler
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Patent number: 8823065Abstract: The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer.Type: GrantFiled: November 8, 2012Date of Patent: September 2, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sung-Li Wang, Ding-Kang Shih, Chin-Hsiang Lin, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 8759868Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.Type: GrantFiled: October 12, 2011Date of Patent: June 24, 2014Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8736053Abstract: A circuit substrate having a mounting surface on which a semiconductor chip is mounted and at least one connection pad formed on the mounting surface is connected to a support plate having at least one mounting portion with a diameter larger than a diameter of the connection pad, through a truncated-cone-shaped solder layer which is formed from at least one solder ball on the basis of a difference between the diameter of the mounting portion and the diameter of the connection pad.Type: GrantFiled: June 19, 2012Date of Patent: May 27, 2014Assignee: Shinko Electric Industries Co., Ltd.Inventors: Koichi Tanaka, Nobuyuki Kurashima, Hajime Iizuka, Tetsuya Koyama
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Patent number: 8736028Abstract: The present invention relates to methods for forming through-wafer interconnects in semiconductor substrates and the resulting structures. In one embodiment, a method for forming a through-wafer interconnect includes providing a substrate having a pad on a surface thereof, depositing a passivation layer over the pad and the surface of the substrate, and forming an aperture through the passivation layer and the pad using a substantially continuous process. An insulative layer is deposited in the aperture followed by a conductive layer and a conductive fill. In another embodiment of the invention, a semiconductor device is formed including a first interconnect structure that extends through a conductive pad and is electrically coupled with the conductive pad while a second interconnect structure is formed through another conductive pad while being electrically isolated therefrom. Semiconductor devices and assemblies produced with the methods are also disclosed.Type: GrantFiled: March 22, 2013Date of Patent: May 27, 2014Assignee: Micron Technology, Inc.Inventor: Mark E. Tuttle
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Patent number: 8686460Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.Type: GrantFiled: October 12, 2011Date of Patent: April 1, 2014Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Publication number: 20140070197Abstract: A method for forming a patterned organic electrode includes printing a toner on a surface of a substrate using a laser printer such that a reverse pattern formed of the toner is formed on the substrate, supplying a solution containing PEDOT and PSS onto the substrate having the reverse pattern formed of the toner such that the solution containing PEDOT and PSS is supplied into a region of the surface of the substrate not covered with the reverse pattern, drying the solution containing PEDOT and PSS supplied onto the substrate, and supplying onto the substrate a stripping solution containing a toner removing solvent which removes the toner and a high conductive solvent which selectively removes the PSS such that the reverse pattern formed of the toner is stripped from the substrate.Type: ApplicationFiled: September 13, 2013Publication date: March 13, 2014Applicants: UNIVERSITY OF YAMANASHI, TOKYO ELECTRON LIMITEDInventors: Hiroshi SATO, Hidenori OKUZAKI
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Patent number: 8669600Abstract: A liquid crystal display device includes a gate electrode formed on a substrate; a active pattern and an ohmic contact pattern formed to overlap with the gate electrode with a gate insulating film therebetween; a source electrode formed on the active pattern and the ohmic contact; a drain electrode formed to oppose the source electrode; a pixel electrode overlapped with the drain electrode and directly contacted with the drain electrode; a common electrode formed to overlap with the pixel electrode with a passivation film therebetween and having a plurality of holes; and wherein the plurality of holes of the common electrode are only formed on a region in which the pixel electrode is formed.Type: GrantFiled: September 16, 2011Date of Patent: March 11, 2014Assignee: LG Display Co., Ltd.Inventors: Sung Il Park, Dae Lim Park
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Publication number: 20140061912Abstract: In a method for making graphitic ribbons in a face of a carbide crystal (110), in which an elongated trench (120) is formed along a predetermined path in the face (112) of the carbide crystal (110), the trench (120) including a horizontal floor (124) coupling two vertical walls (122), the trench (120) following a path on which it is desired to form a graphitic ribbon (130). The carbide crystal (110) and the trench (120) are subjected to an annealing environment for an amount of time sufficient to cause a graphene ribbon (130) having a V-shaped cross section to form along the predetermined path of the trench (120).Type: ApplicationFiled: March 16, 2012Publication date: March 6, 2014Inventor: Walt A. De Heer
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Patent number: 8653663Abstract: A copper interconnect includes a copper layer formed in a dielectric layer. A glue layer is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the glue layer and the dielectric layer. The barrier layer is a metal oxide.Type: GrantFiled: April 9, 2010Date of Patent: February 18, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Kuang Kao, Huei-Wen Yang, Yung-Sheng Huang, Yu-Wen Lin
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Patent number: 8564129Abstract: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10?6 ohms·cm2.Type: GrantFiled: August 3, 2012Date of Patent: October 22, 2013Assignee: Phononic Devices, Inc.Inventors: Robert Joseph Therrien, Jason D. Reed, Jaime A. Rumsey, Allen L. Gray
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Patent number: 8564012Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.Type: GrantFiled: March 27, 2012Date of Patent: October 22, 2013Assignee: Intersil Americas LLCInventors: Seshasayee S. Ankireddi, Lynn K. Wiese
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Publication number: 20130234331Abstract: In a wiring conversion part which connects a lower conductive film to a first conductive film each functioning as a wiring, a first transparent conductive film is formed into a pattern in which it covers an end surface of the first conductive film, and an angle formed at a corner part in a portion of the first transparent conductive film making contact with a lower first insulating film (outside a width of the first conductive film) is larger than 90 degrees and smaller than 270 degrees or the corner part has an arc shape. A second transparent conductive film is connected to the lower conductive film and the first transparent conductive film, and the first transparent conductive film is connected to the first conductive film, so that the lower conductive film and the first conductive film are electrically connected to each other.Type: ApplicationFiled: February 28, 2013Publication date: September 12, 2013Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Kazunori OKUMOTO
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Publication number: 20130221525Abstract: There are disclosed herein various implementations of semiconductor packages having a selectively conductive film interposer. In one such implementation, a semiconductor package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, a selectively conductive film interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The selectively conductive film interposer may be configured to serve as an interposer and to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors.Type: ApplicationFiled: February 24, 2012Publication date: August 29, 2013Applicant: BROADCOM CORPORATIONInventors: Sam Ziqun Zhao, Kevin Kunzhong Hu, Sampath K. V. Karikalan, Rezaur Rahman Khan, Pieter Vorenkamp, Xiangdong Chen
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Patent number: 8519482Abstract: A method for forming a device is disclosed. The method includes providing a substrate prepared with first and second contact regions and a dielectric layer over the contact region. First and second vias are formed in the dielectric layer. The first via is in communication with the first contact region and the second via is in communication with the second contact region. A buried void provides a communication path between the first and second vias. The vias and buried void are at least partially filled with a dielectric filler. The partially filled buried void blocks the communication path between the first and second vias created by the buried void. The dielectric filler in the vias is removed, leaving remaining dielectric filler in the buried void to block the communication path between the first and second vias and contact plugs are formed in the vias.Type: GrantFiled: September 28, 2011Date of Patent: August 27, 2013Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Hong Yu, Huang Liu
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Patent number: 8502389Abstract: An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.Type: GrantFiled: August 8, 2011Date of Patent: August 6, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ying Ho, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang, Shih Pei Chou
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Patent number: 8476105Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.Type: GrantFiled: December 22, 2010Date of Patent: July 2, 2013Assignee: General Electric CompanyInventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang
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Patent number: 8395266Abstract: A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.Type: GrantFiled: June 28, 2011Date of Patent: March 12, 2013Assignee: Hynix Semiconductor Inc.Inventors: Kwan-Yong Lim, Min-Gyu Sung, Heung-Jae Cho
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Patent number: 8390120Abstract: A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.Type: GrantFiled: October 27, 2010Date of Patent: March 5, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-Jin Moon, Pil-Kyu Kang, Dae-Lok Bae, Gil-Heyun Choi, Byung-Lyul Park, Dong-Chan Lim, Deok-Young Jung
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Patent number: 8278769Abstract: A semiconductor device includes a semiconductor substrate formed from compound semiconductor material and multiple conductive connecting pads. The connecting pads are symmetrically arranged on a first surface of the semiconductor substrate in an interweaving pattern. Each cleavage plane extending across the first surface of the semiconductor substrate intersects a portion of at least one connecting pad of the plurality of connecting pads.Type: GrantFiled: July 2, 2009Date of Patent: October 2, 2012Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.Inventor: Michael Frank
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Patent number: 8258540Abstract: An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base.Type: GrantFiled: March 23, 2011Date of Patent: September 4, 2012Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Tzu-Chien Hung, Chia-Hui Shen
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Patent number: 8242569Abstract: An encapsulation of a sensitive component structure on a semiconductor substrate with a film covering the component structure is disclosed. A cavity for the component structure is provided in the film. A MEMS and a method for encapsulating a sensitive component structure is also disclosed.Type: GrantFiled: June 25, 2009Date of Patent: August 14, 2012Assignee: Robert Bosch GmbHInventor: Peter Rothacher
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Patent number: 8232638Abstract: An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.Type: GrantFiled: August 20, 2008Date of Patent: July 31, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Tae Ma, In-Sun Park, Dong-Jo Kang, Hyun-Seok Lim, Do-Hyung Kim
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Patent number: 8125082Abstract: A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.Type: GrantFiled: May 15, 2008Date of Patent: February 28, 2012Assignee: International Business Machines CorporationInventors: Cyril Cabral, Jr., Roy A. Carruthers, Jia Chen, Christopher Detavernier, James M. Harper, Christian Lavoie
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Patent number: 8097885Abstract: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.Type: GrantFiled: May 27, 2008Date of Patent: January 17, 2012Assignee: Canon Kabushiki KaishaInventors: Tomoyuki Oike, Tatsuya Iwasaki
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Patent number: 8093618Abstract: There are provided an ohmic electrode, which includes a contact layer made of an Al alloy and formed on a nitride-based semiconductor layer functioning as a light emitting layer, a reflective layer made of Ag metal, formed on the contact layer and having some particles in-diffused to the semiconductor layer, and a protective layer formed on the reflective layer to restrain out-diffusion of the reflective layer; a method of forming the ohmic electrode; and a semiconductor light emitting element having the ohmic electrode. The present invention has strong adhesive strength and low contact resistance since the reflective layer and the light emitting layer directly form an ohmic contact due to the interface reaction during heat treatment, and the present invention has high light reflectance and excellent thermal stability since the contact layer and the protective layer restrain out-diffusion of the reflective layer during heat treatment.Type: GrantFiled: October 11, 2007Date of Patent: January 10, 2012Assignees: Seoul Opto Device Co., Ltd., Postech Academy-Industry FoundationInventors: Jong Lam Lee, Sang Han Lee
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Patent number: 8089090Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 ? and a specific contact resistivity less than about 10?3 ohm-cm2.Type: GrantFiled: July 27, 2005Date of Patent: January 3, 2012Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8044425Abstract: A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 ? and a specific contact resistivity less than about 10?3 ohm-cm2.Type: GrantFiled: July 27, 2005Date of Patent: October 25, 2011Assignee: Cree, Inc.Inventors: Mark Raffetto, Jayesh Bharathan, Kevin Haberern, Michael Bergmann, David Emerson, James Ibbetson, Ting Li
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Patent number: 8035186Abstract: A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.Type: GrantFiled: October 29, 2007Date of Patent: October 11, 2011Assignee: Infrared Newco, Inc.Inventors: Conor S. Rafferty, Clifford A. King
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Publication number: 20110233560Abstract: An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.Type: ApplicationFiled: March 16, 2011Publication date: September 29, 2011Applicant: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Akihiro Shibatomi, Kunhwa Jung, Yuji Sutou
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Patent number: 8012783Abstract: The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with the semiconductor. The semiconductor element of the present invention has an n-type Gallium nitride based compound semiconductor and an electrode that forms an ohmic contact with the semiconductor, wherein the electrode has a TiW alloy layer to be in contact with the semiconductor. According to a preferable embodiment, the above-mentioned electrode can also serve as a contact electrode. According to a preferable embodiment, the above-mentioned electrode is superior in the heat resistance. Moreover, a production method of the semiconductor element is also provided.Type: GrantFiled: April 4, 2006Date of Patent: September 6, 2011Assignee: Mitsubishi Chemical CorporationInventors: Tsuyoshi Takano, Takahide Joichi, Hiroaki Okagawa
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Patent number: 7999346Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.Type: GrantFiled: June 17, 2010Date of Patent: August 16, 2011Assignee: Rohm Co., Ltd.Inventors: Yuji Okamura, Masashi Matsushita
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Patent number: 7993948Abstract: A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.Type: GrantFiled: August 11, 2009Date of Patent: August 9, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Shinji Saito, Shinya Nunoue, Toshiyuki Oka
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Patent number: 7932184Abstract: A method of manufacturing a solar cell module, including: forming a laminated body including a first protective member, a first sealing member having a first melting point, a plurality of solar cells, a second sealing member having a second melting point higher than the first melting point, and the second protective member; heating the first sealing member to a temperature equal to or higher than the first melting point but lower than the second melting point; and heating the second sealing member to a temperature equal to or higher than the second melting point. In forming the laminated body, the second sealing member is arranged to form a surface including a plurality of convex portions faces the first sealing member.Type: GrantFiled: September 16, 2008Date of Patent: April 26, 2011Assignee: Sanyo Electric Co., Ltd.Inventor: Yousuke Ishii