Abstract: A semiconductor device has a plurality of first semiconductor die with an encapsulant deposited over a first surface of the first semiconductor die and around the first semiconductor die. An insulating layer is formed over the encapsulant and over a second surface of the first semiconductor die opposite the first surface. The insulating layer includes openings over the first semiconductor die. A first conductive layer is formed over the first semiconductor die within the openings. A second conductive layer is formed over the first conductive layer to form vertical conductive vias. A second semiconductor die is disposed over the first semiconductor die and electrically connected to the first conductive layer. A bump is formed over the second conductive layer outside a footprint of the first semiconductor die. The second semiconductor die is disposed over an active surface or a back surface of the first semiconductor die.

Abstract: A method for forming a conductive structure is disclosed, the method comprising the steps of: forming a metallic frame having a plurality of metal parts separated from each other; forming an insulating layer on the top surface of the plurality of metal parts; and forming a conductive pattern layer on the insulating layer for making electrical connections with at least one portion of the plurality of metal parts.

Abstract: A semiconductor device includes a first substrate, a pad array, a conductive bump, a first via and a dielectric. The pad array, formed on a surface of the first substrate, includes a first type pad and a second type pad at a same level. The conductive bump connects one of the first type pad of the second type pad to a second substrate. The first via, connected to a conductive feature at a different level to the first type pad, is located within a projection area of the first type pad and directly contacts the first type pad. The second type pad is laterally connected with a conductive trace on the same level. The conductive trace is connected to a second via at a same level with the first via. The dielectric in the first substrate contacts the second type pad. The second type pad is floated on the dielectric.

Abstract: Techniques for reducing stress in an integrated circuit wafer are disclosed. A silicon substrate may include multiple integrated circuit chips and multiple scribe regions situated between the one of the multiple integrated circuit chips. A particular scribe region includes a plurality of layers and a stress reduction structure that includes, at a particular layer of the plurality of layers, a material whose coefficient of thermal expansion of materials is greater than a coefficient of thermal expansion of the silicon wafer.

Abstract: A method of manufacturing a semiconductor device includes: receiving a first substrate with a surface; receiving a second substrate; determining a pad array on the surface of the first substrate, wherein the pad array includes a first type pad and a second type pad; forming a via pattern underlying the pad array in the first substrate according to the location of each via, wherein the first type pad in the pad array is directly contacting a via of the via pattern and the second type pad in the pad array is clear of any via of the via pattern; laterally connecting the second type pad with a conductive trace, wherein the conductive trace connects to another via that is same level with the via contacting the first type pad; and disposing a first conductive bump and a second conductive bump between the first substrate and the second substrate.

Abstract: The invention relates to a circuit board (1a, 1b, 1c), particularly for a power-electronic module (2), comprising an electrically-conductive substrate (3) which consists, at least partially and preferably entirely, of aluminum and/or an aluminum alloy. On at least one surface (3a, 3b) of the electrically-conductive substrate (3), at least one conductor surface (4a, 4b) is arranged in the form of an electrically-conductive layer applied preferably using a printing method and more preferably using a screen-printing method, said conductor surface (4a, 4b) being in direct electrical contact with the electrically-conductive substrate (3).

Abstract: A microelectronic package may be fabricated with debug access ports formed either at a side or at a bottom of the microelectronic package. In one embodiment, the debug access ports may be formed within an encapsulation material proximate the microelectronic package side. In another embodiment, the debug access ports may be formed in a microelectronic interposer of the microelectronic package proximate the microelectronic package side. In a further embodiment, the debug access ports may be formed at the microelectronic package bottom and may include a solder contact.

Abstract: Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.

Abstract: The present disclosure relates to a semiconductor package. In an embodiment, the semiconductor package includes a substrate having a lateral surface and an upper surface, a semiconductor device mounted to the substrate, and a molding compound covering the lateral surface and the upper surface of the substrate and at least a portion of the semiconductor device. A surface of the semiconductor device is substantially coplanar with a surface of the molding compound.

Abstract: A cavity package is provided. The package can include a metal leadframe and a substrate attached to an interposer formed as part of the leadframe. The substrate typically has a coefficient of thermal expansion matched to the coefficient of thermal expansion of a semiconductor device to be affixed to the substrate. The semiconductor device is typically attached to an exposed top surface of the substrate. The cavity package also includes a plastic portion molded to the leadframe forming a substrate cavity. The substrate cavity allows access to the exposed top surface of the substrate for affixing the semiconductor device. The cavity package also include a connective element for grounding a lid through an electrical path from the lid to the interposer.

Abstract: A multilayer wiring board includes a main wiring board which mounts a semiconductor component on a surface of the main wiring board, and a wiring structure body which is mounted to the main wiring board and is formed to be electrically connected to the semiconductor component. The wiring structure body includes conductive pads formed on a first side of the wiring structure body, a heat radiation component formed on a second side of the wiring structure body on the opposite side with respect to the first side, an insulation layer positioned between the conductive pads and the heat radiation component, and via conductors formed in the insulation layer such that each of the via conductors has a diameter which increases from the first side toward the second side of the wiring structure body.

Abstract: This disclosure relates generally to an electronic package that can include a die and a dielectric layer at least partially enveloping the die. Electrical interconnects can be electrically coupled to the die and passing, at least in part, through the dielectric layer. An optical emitter can be electrically coupled to the die with a first one of the electrical interconnects and configured to emit light from a first major surface of the electronic package. A solder bump can be electrically coupled to the die with a second one of the electrical interconnects and positioned on a second major surface of the electronic package different from the first major surface.

Abstract: Provided is a complex material that includes a first metal deposition layer, a first thermosetting resin layer positioned on one side of the first metal deposition layer, and a second thermosetting resin layer positioned on the other side of the first metal deposition layer.

Abstract: The invention relates to a circuit board, particularly for a power-electronic module, comprising an electrically-conductive substrate which consists, at least partially and preferably entirely, of aluminium and/or an aluminium alloy. On at least one surface of the electrically-conductive substrate, at least one conductor surface is arranged in the form of an electrically-conductive layer applied preferably using a printing method and more preferably using a screen-printing method, said conductor surface being in direct electrical contact with the electrically-conductive substrate.

Abstract: A method of forming a network of RDL lines on the backside of a thinned TSV die to control warpage and the resulting device are provided. Embodiments include providing a thinned TSV die of a 3D IC stack, the thinned TSV die having a front side and a back side; forming a plurality of RDL lines across the backside of the die; and forming a plurality of UBM structures across the backside of the die.

Abstract: An interposer comprising an array of top contacts on the top surface configured to interface with an integrated circuit package, a corresponding array of bottom contacts on the bottom surface configured to interface with a component beneath the interposer, through connections between corresponding top and bottom contacts and a plurality of signal probe points on the edge surface. The interposer may include an electrical pathway connecting a first through connection to a first signal probe point. The electrical pathway may contact the first through connection at a first intersection. A resistor may be disposed along the electrical pathway, between the first intersection and the first signal probe point. The electrical pathway from the first intersection to the resistor may be an unconditioned signal pathway. The electrical pathway from the resistor to the first signal contact may be a conditioned signal pathway. The unconditioned signal pathway may have a length of not greater than 0.20 inch.

Abstract: A semiconductor package is provided, which includes: a first semiconductor device having a first top surface and a first bottom surface opposite to the first top surface; a plurality of conductive balls formed on the first top surface of the first semiconductor device; a second semiconductor device having a second top surface and a second bottom surface opposite to the second top surface; and a plurality of conductive posts formed on the second bottom surface of the second semiconductor device and correspondingly bonded to the conductive balls for electrically connecting the first semiconductor device and the second semiconductor device, wherein the conductive posts have a height less than 300 um. Therefore, the present invention can easily control the height of the semiconductor package and is applicable to semiconductor packages having fine-pitch conductive balls.

Abstract: Provided herein are electronic devices assembled with a heat absorbing and/or thermally insulating composition.

Abstract: Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.

Abstract: A device includes a metal pad, a passivation layer overlapping edge portions of the metal pad, and a first polymer layer over the passivation layer. A Post-Passivation-Interconnect (PPI) has a level portion overlying the first polymer layer, and a plug portion that has a top connected to the level portion. The plug portion extends into the first polymer layer. A bottom surface of the plug portion is in contact with a dielectric material. A second polymer layer is overlying the first polymer layer.

Abstract: Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.

Abstract: An integrated circuit package comprising an active semiconductor device layer and at least one heat-transfer semiconductor layer on the active semiconductor device layer. The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer.

Abstract: Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.

Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads.

Abstract: A microelectronic package includes a microelectronic unit and a substrate. The microelectronic unit includes a microelectronic element having contacts on a front face. A dielectric material has a first surface substantially flush with the front face of the microelectronic element. Conductive traces have at least portions extending along the front face away from the contacts, at least some of which also extend along the first surface of the dielectric material. Contacts are connected with the traces, at least some of which are disposed at the first surface of the dielectric material. The substrate has first and second opposed surfaces and an edge extending therebetween, the first surface facing the front face of the microelectronic unit, and the second surface having a plurality of terminals thereon configured for electrical connection with at least one external component. Masses of conductive matrix material join the terminals with the redistribution contacts.

Abstract: Thermally-induced stress on a silicon micro-electromechanical pressure transducer (MEMS sensor) is reduced by attaching the MEMS sensor to a plastic filled with low CTE fillers that lowers the plastic's coefficient of thermal expansion (CTE) to be closer to that of silicon. The MEMS sensor is attached to the housing using an epoxy adhesive/silica filler mixture, which when cured has a CTE between about ten PPM/° C. and about thirty PPM/° C. in order to match the housing CTE. The adhesive also has a glass transition temperature (Tg) above the operating temperature range. This design provides good sealing of the sensor and stable sensor outputs.

Abstract: A chip-sized wafer level packaged device including a portion of a semiconductor wafer including a device, a packaging layer formed over the portion of the semiconductor wafer, the packaging layer including a material having thermal expansion characteristics similar to those of the semiconductor wafer and a ball grid array formed over a surface of the packaging layer and being electrically connected to the device.

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. A first insulating layer is formed over the die and encapsulant. The first insulating layer is cured with multiple dwell cycles to enhance adhesion to the die and encapsulant. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. The second insulating layer is cured with multiple dwell cycles to enhance adhesion to the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and first conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. The first, second, and third insulating layers have different CTE. The second insulating layer or third insulating layer is cured to a dense state to block moisture.

Abstract: A fine pitch solder bump structure with a built-in stress buffer that is utilized in electronic packages, and a method of producing the fine pitch solder bump structure with built-in stress buffer. Employed is a very thick final passivation layer that is constituted of a polyimide as a so-called “cushion” for a minimal thickness of UBM (BLM) pad and solder material, while concurrently completely separating the resultingly produced polyimide islands, so that the polyimide material provides most of the physical height for the “standoff” of a modified C4 (controlled collapse chip connection) structure.

Abstract: An electronic component includes a metal substrate, a semiconductor chip configured to be attached to the metal substrate, and a buffer layer positioned between the metal substrate and the semiconductor chip configured to mechanically decouple the semiconductor chip and the metal substrate. The buffer layer extends across less than an entire bottom surface of the semiconductor chip.

Abstract: A BGA semiconductor device includes a semiconductor package and a mounting board mounting thereon the semiconductor package, wherein an array of signal electrodes of the semiconductor package and an array of signal electrodes of the mounting board are coupled together via signal bumps. The BGA semiconductor device also includes a dummy bump, which reinforces the bending strength of the BGA semiconductor device and is broken by a shearing force caused by thermal expansion to alleviate the stress for the signal bumps.

Abstract: A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

Abstract: A BGA semiconductor device includes a semiconductor package and a mounting board mounting thereon the semiconductor package, wherein an array of signal electrodes of the semiconductor package and an array of signal electrodes of the mounting board are coupled together via signal bumps. The BGA semiconductor device also includes a dummy bump, which reinforces the bending strength of the BGA semiconductor device and is broken by a shearing force caused by thermal expansion to alleviate the stress for the signal bumps.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package are provided. A semiconductor package according to the present general inventive concept may include a base substrate having one surface on which a connection terminal is formed and a first package substrate having a molding layer covering the base substrate. The molding layer faces a circumference of the connection terminal and includes a side surface having first and second surfaces having a circumference of a different size, respectively.

Abstract: A structurally robust power switching assembly, comprising a first rigid structural unit that defines a first unit major surface that is patterned to define a plurality of mutually electrically isolated, electrically conductive paths. Also, a similar, second rigid structural unit is spaced apart from the first unit major surface. Finally, a transistor is interposed between and electrically connected to the first unit major surface and the second unit major surface.

Abstract: An integrated circuit, a circuit system and method of manufacturing such is disclosed. One embodiment provides a circuit chip including a first contact field on a chip surface; and an insulating layer on the chip surface. The insulating layer includes a flexible material. A contact pillar is coupled to the first contact field and extends from the chip surface through the insulating layer. The contact pillar includes a conductive material.

Abstract: An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the hollow cone spacer, the hollow column spacer, and the base layer form a space, and sidewalls of the hollow cone spacer and the hollow column spacer are made of silicon-containing organic or inorganic materials.

Abstract: A semiconductor device, includes: an organic multilayer wiring substrate having an inner conductive layer; a semiconductor element mounted and connected on one surface of the wiring substrate; and a plurality of solder balls disposed on the other surface in a grid array. A defect portion is formed at an area corresponding to a corner solder ball disposed at an outer peripheral corner, or at an area corresponding to the corner solder ball and peripheral solder balls at the inner conductive layer. Temperature rises of the solder balls disposed in a vicinity of the corner are suppressed, and therefore, the semiconductor device of which fatigue life is prolonged and superior in reliability can be obtained.

Abstract: A semiconductor chip of the present invention has a wiring substrate and a chip part. The wiring substrate has an insulating resin layer having a first major surface and a second major surface, and a first wiring layer disposed on the insulating resin layer on the second major surface side. The chip part has a projection electrode on the bottom surface. The insulating resin layer holds the chip part such that the bottom and side surfaces of the chip part are in contact with the insulating resin layer, and the top surface of the chip part is exposed on the insulating layer on the first major surface side. The projection electrode of the chip part is connected with the first wiring layer.

Abstract: A packaging substrate structure with a semiconductor chip embedded therein is disclosed, including a carrier board having a first and an opposed second surfaces and disposed with at least a through cavity; a semiconductor chip received in the through cavity, the chip having an active surface and an inactive surface opposite to one another, wherein the active surface has a plurality of electrode pads, a passivation layer is disposed on the active surface with the electrode pads exposed from the passivation layer, and metal pads are disposed on surfaces of the electrode pads; a buffer layer disposed on the first surface of the carrier board and on surfaces of the passivation layer and the metal pads; a first dielectric layer disposed on the buffer layer; and a first circuit layer disposed on the first dielectric layer and electrically connected with the metal pads of the chip via first conductive structures disposed in the buffer layer and the first dielectric layer, wherein the CTE (Coefficient of Thermal Expa

Abstract: A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.

Abstract: An electrical assembly includes at least two PTC-resistor elements, each of which has a base body having a flat shape. Each base body has main surfaces that contain electrodes. A carrier plate has spacers for positioning base bodies of the at least two PTC resistor elements. A width each spacer is about equal, in at least one area, to a distance between facing electrodes of adjacent PTC-resistor elements.

Abstract: A semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.

Abstract: A chip-sized wafer level packaged device including a portion of a semiconductor wafer including a device, a packaging layer formed over the portion of the semiconductor wafer, the packaging layer including a material having thermal expansion characteristics similar to those of the semiconductor wafer and a ball grid array formed over a surface of the packaging layer and being electrically connected to the device.

Abstract: To prevent or alleviate the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package for mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a low strength. A package for semiconductor devices is formed as a laminate of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon the other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole region or some region(s) of the insulating resin layers of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.

Abstract: A semiconductor apparatus having improved thermal fatigue life is provided by lowering maximum temperature on jointing members and reducing temperature change. A jointing member is placed between a semiconductor chip and a lead electrode, and a thermal stress relaxation body is arranged between the chip and a support electrode. Jointing members are placed between the thermal stress relaxation body and the chip and between the thermal stress relaxation body and the support electrode. A second thermal stress relaxation body made from a material having a thermal expansion coefficient between the coefficients of the chip and the lead electrode is located between the chip and the lead electrode. The first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m·° C.).

Abstract: Method of forming a microelectronic package using control of die and substrate differential expansions. The method includes: providing a die-substrate combination including a substrate, a die disposed on the substrate, and plurality of solder paste disposed between the die and the substrate; reflowing the solder paste by exposing the die-substrate combination to temperatures changes including heating the die-substrate combination to liquefy the solder paste, and cooling down the die-substrate combination until the solder paste has solidified to form solder joints to yield the package; and controlling an expansion of the die and the substrate at least during cooling down to mitigate a relative difference in volumetric strain between the die and the substrate. Controlling may comprise exposing the die-substrate combination to pressure changes at least during cooling down.

Abstract: A feature is inscribed in a major surface of a microelectronic workpiece having a material property expressed as a reference coefficient value. The feature includes a first material having a first coefficient value for the material property and a second material having a second coefficient value for the material property. The first coefficient value is different from the reference coefficient value different from the first coefficient value and the second coefficient value is different from the first coefficient value. The first and second materials behave as an aggregate having an aggregate coefficient value for the material property between the first coefficient value and the reference coefficient value.

Abstract: In a ball grid array (BGA) package, a first stiffener is attached to a surface of a substrate. A second stiffener is attached to the surface of the substrate to be co-planar with the first stiffener. The second stiffener is separated from the first stiffener by a channel therebetween. An integrated circuit (IC) die is mounted to a surface of the second stiffener.

Abstract: A flip chip assembly having reduced stress and warpage comprises a flip chip package including an organic substrate and an integrated circuit chip, a temporary structure having a coefficient of thermal expansion that is substantially similar to a coefficient of thermal expansion of the integrated circuit chip, and a cap member coupled to a top side of the organic substrate. A bottom side of the integrated circuit chip is bonded to the top side of the organic substrate with controlled chip collapse columns. Additionally, a bottom side of the organic substrate is soldered to a top side of the temporary structure with solder interconnections that are applied to a plurality of solder pads on the top side of the temporary structure, the position of the solder pads on the temporary structure mirroring the position of a plurality of solder pads on the bottom side of the organic substrate.