Abstract: A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOP including a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

Abstract: The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.

Abstract: A printed circuit board includes at least two conductive traces, each having a first portion and a second portion. The printed circuit board also includes a cross-over section that includes two electrically conductive portions, each connecting electrically to the first and second portions of a corresponding one of the conductive traces, such that the conductive traces in their first portions lie on opposite sides of each other as they do in their second portions.

Abstract: A semiconductor package structure for flip chip package includes at least a patterned circuit layer and an insulating layer alternately stacking up each other. The patterned layer includes a plurality of bump pads, and the insulating layer includes a plurality of etching holes. The etching holes and the bump pads are aligned, such that the bump pads are exposed through the etching holes. A plurality of bumps is disposed on the active surface of the chip, which can be obtained by stud bumping. The etching holes are filled with solder paste, and the bumps of the chips penetrate into the solder filled etching holes. Vibration obtained by mechanical equipment, or ultrasonic equipment can be applied to assist the alignment of the bumps to the corresponding bump pads. A reflow process is applied to collapse the solder paste that fills the etching holes to form electrical connection between the bumps and bump pads.

Abstract: A semiconductor package module having no solder balls and a method of manufacturing the semiconductor package module are provided. The semiconductor package module includes a module board on which a plurality of semiconductor devices are able to be mounted, a semiconductor package bonded on the module board using an adhesive, being wire-bondable to the module board, and having already undergone an electrical final test, second wires electrically connecting second bond pads of the semiconductor package to bond pads of the module board; and a third sealing resin enclosing the second wires and the semiconductor package. Because the semiconductor package module does not use solder balls, degradation of solder joint reliability (SJR) can be prevented. Further, the use of a semiconductor package that has already undergone an electrical test can reduce degradation of the yield of a completed semiconductor package module.

Abstract: A semiconductor device includes a substrate portion having a plurality of diffusion regions defined therein in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. The semiconductor device includes a gate electrode level region including a number of conductive features defined to extend in only a first parallel direction. Adjacent ones of the number of conductive features that share a common line of extent in the first parallel direction are fabricated from respective originating layout features that are separated from each other by an end-to-end spacing having a size that is substantially equal across the gate electrode level region and is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level region includes conductive features defined along at least four different virtual lines of extent in the first parallel direction.

Abstract: An integrated circuit and method of fabricating the same are provided. Included are an active circuit, and a metal layer disposed, at least partially, above the active circuit. Further provided is a bond pad disposed, at least partially, above the metal layer. To prevent damage incurred during a bonding process, the aforementioned metal layer may define a frame with an outer periphery and an inner periphery.

Abstract: A restricted layout region is defined to include a diffusion level layout that includes a plurality of diffusion region layout shapes to be formed within a portion of a substrate of a semiconductor device. The plurality of diffusion region layout shapes are defined in a non-symmetrical manner relative to a centerline defined to bisect the diffusion level layout of the restricted layout region. The plurality of diffusion region layout shapes include a p-type diffusion region layout shape and an n-type diffusion region layout shape separated by a central inactive region. A gate electrode level layout is defined include a number of rectangular-shaped layout features placed to extend in only a first parallel direction, and defined along at least four different lines of extent in the first parallel direction. The restricted layout region corresponds to an entire gate electrode level of a cell layout.

Abstract: A restricted layout region in a layout of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes. The plurality of diffusion region layout shapes are defined in a non-symmetrical manner relative to a centerline defined to bisect the diffusion level layout. A gate electrode level layout is defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. Each of a number of interconnect level layouts is defined to pattern conductive features within corresponding interconnect levels above the gate electrode level.

Abstract: An IC package to enhance the bondibility of embedded bumps, primarily includes a substrate having a plurality of bump-accommodating holes, a bumped chip, an encapsulant, and a plurality of external terminals. The substrate further has a plurality of inner pads at one ends of the bump-accommodating holes respectively. The inner pads may be meshed or a soldering layer is disposed thereon for improving bump connection. The chip is attached to the substrate with the bumps aligned and embedded in the corresponding bump-accommodating holes. The encapsulant is at least formed on a lower surface of the substrate to encapsulate the meshes or the soldering layer. By the suspended meshes or/and the soldering layer, the bumps can be easily bonded at lower temperatures to simplify the manufacturing process with shorter electrical conductive paths and thinner package profiles without wire sweeping.

Abstract: A substrate includes a substrate; a number of pad redistribution chips stacked on the substrate and on one another after being rotated 90° in a predetermined direction relative to one another, the pad redistribution chips having a number of center pads positioned at the center thereof, a number of (+) edge pads positioned on an end thereof while corresponding to those of the center pads lying in (+) direction from a middle center pad located in the middle of the center pads, a number of (?) edge pads positioned on the other end thereof while corresponding to those of the center pads lying in (?) direction with symmetry to those of the center pads lying in the (+) direction, and a number of traces for electrically connecting the center pads to the corresponding (±) edge pads, respectively; a flexible PCB for electrically connecting the substrate to the pad redistribution chips; and an anisotropic dielectric film for electrically connecting the pad redistribution chips to the flexible PCB and the substrate to t

Abstract: An integrated circuit package comprises an integrated circuit die comprising N adjacent pads, where N is an integer greater than three. A substrate comprises a first pair of traces including first and second traces and a second pair of traces including third and fourth traces. The first, second, third and fourth traces include first ends spaced from the integrated circuit die and second ends adjacent to the integrated circuit die. The first and second pairs of traces carry differential signals. The third trace of the second pair of traces has a first polarity and the fourth trace of the second pair of traces has a second polarity. The third trace is located on one side of the fourth trace at the first end and is located on an opposite side of the fourth trace at the second end. N connections independently connect the second ends to N pads.

Abstract: A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.

Abstract: Signal lines which provide electric connections from an internal circuit formed on a main surface of a semiconductor chip and including, for example, MIS transistor to protective elements constituted by, for example, diodes are drawn out from outlet ports formed on wiring lines disposed between the protective elements, and a signal line region occupied by the signal lines is provided over the protective elements and under electrode pads. A wiring region on the main surface of the semiconductor chip can be enlarged without increasing the chip area.

Abstract: A system includes a first crosswire array, having first input wiring and first output wiring, and a second crosswire array, having second input wiring and second output wiring, wherein the first crosswire array and second crosswire array are provided on or above the same side of a first substrate. A second substrate is provided opposing the first substrate and including interconnection tips and circuit elements used to electrically connect the first output wiring to the second input wiring. This system may be applied for interconnection between crosswire or crossbar arrays with different functionalities such as memory storage, pattern analysis, electron beam lithography, image sensing, image generation, etc. It may also provide for interconnection between solid state electronics, fabricated on the second substrate and nanowire or nanotube based crosswire arrays fabricated on the first substrate.

Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.

Abstract: A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.

Abstract: Disconnection of wiring and deterioration of step coverage are prevented to offer a semiconductor device of high reliability. A pad electrode formed on a silicon die is connected with a re-distribution layer on a back surface of the silicon die. The connection is made through a pillar-shaped conductive path filled in a via hole penetrating the silicon die from the back surface of the silicon die to the pad electrode.

Abstract: A multi-celled chip. The chip includes a plurality of hexagonal cells arranged in an array. A plurality of interconnects including Y's connect the cells in clusters of three cells each, so that each of the cells is interconnected.

Abstract: A rectangular-shaped interlevel connection layout structure is defined to electrically connect a first layout structure in a first chip level with a second layout structure in a second chip level. The rectangular-shaped interlevel connection layout structure is defined by an as-drawn cross-section having at least one dimension larger than a corresponding dimension of either the first layout structure, the second layout structure, or both the first and second layout structures. A dimension of the rectangular-shaped interlevel connection layout structure can exceed a normal maximum size in one direction in exchange for a reduced size in another direction. The rectangular-shaped interlevel connection layout structure can be placed in accordance with a gridpoint of a virtual grid defined by two perpendicular sets of virtual lines. Also, the first and/or second layout structures can be spatially oriented and/or placed in accordance with one or both of the two perpendicular sets of virtual lines.

Abstract: A semiconductor device is composed of a power supply interconnection extending from a certain starting point in a first direction and also extending from the starting point in a second direction orthogonal to the first direction, a plurality of power pads, and connecting interconnections providing electrical connection between the power supply interconnection and the power pads. The power supply interconnection, the power pads, and the connecting interconnections are arranged in a symmetrical manner with respect to a symmetry line crossing the starting point and extending in a direction at an angle of 45 degree to the first and second directions.

Abstract: A micro electronic component, preferably in the form of an electronic memory, includes the use of clusters as an electronic memory. Also disclosed as part of the present invention is a method for fabricating a micro electronic component. The present invention contemplates fabrication of an especially compact electronic memory that works especially with single-electron transistors or single-electronic transfers. According to the present invention, clusters with a metallic cluster nucleus are arranged in parallel grooves essentially in lines or rows and are connected individually to first and second connecting electrodes, such that individually the clusters can be electrically modified or polled independently of each other.

Abstract: A composite conductive film formed of a polymer-matrix and a plurality of conductive lines less than micro-sized and its fabricating method are provided. The conductive lines are arranged parallel and spaced apart from each other so as to provide anisotropic conductivity. The present conductive film can serve as an electrical connection between a fine-pitch chip and a substrate. Additionally, an adhesive layer is formed on two opposite sides of the conductive film along its conductive direction to increase adhesive areas. The strength and reliability of the package using the conductive film are thus enhanced.

Abstract: A surface mount semiconductor device using a lead frame can suppress stress applied to a package by a load in a forming process performed for the lead frame projecting from the package at a portion at which the lead frame projects the package. Concave portions can be provided in at least one lead of a pair of leads that project laterally from side faces of the package. The concave portions can be arranged at positions where the leads are bent approximately perpendicularly along the side faces of the package at respective central portions of the leads. Thus, a cross-sectional area of a bending portion of the lead can be reduced, thereby enabling the lead (or leads) to be easily bent with a smaller bending load. Therefore, a surface mount semiconductor device can be achieved which prevents disconnection without impairing a heat radiation property and which has good moisture resistance.

Abstract: A rectangular-shaped interlevel connection structure is defined to electrically connect a first structure in a first chip level with a second structure in a second chip level. The rectangular-shaped interlevel connection structure is defined by an as-drawn cross-section having at least one dimension larger than a corresponding dimension of either the first structure, the second structure, or both the first and second structures. A dimension of the rectangular-shaped interlevel connection structure can exceed a normal maximum size in one direction in exchange for a reduced size in another direction. The rectangular-shaped interlevel connection structure can be placed in accordance with a gridpoint of a virtual grid defined by two perpendicular sets of virtual lines. Also, the first and/or second structures can be spatially oriented and/or placed in accordance with one or both of the two perpendicular sets of virtual lines.

Abstract: A ball grid array includes: a semiconductor chip having multiple pads; and an interposer for mounting the semiconductor chip on a first surface. The interposer includes multiple wirings on the first surface and multiple ball terminals on a second surface opposite to the first surface. Each wiring is connected to a corresponding pad of the semiconductor chip, and is electrically connected to a corresponding ball terminal. At least one of ball terminals providing a power supply terminal or a ground terminal provides a common ball terminal for connecting to at least two of the pads of the semiconductor chip through two wirings.

Abstract: An interconnect structure with stress buffering ability is disclosed, which comprises: a first surface, connected to a device selected form the group consisting of a substrate and an electronic device; a second surface, connected to a device selected form the group consisting of the substrate and the electronic device; a supporting part, sandwiched between and interconnecting the first and the second surfaces while enabling the areas of the two ends of the supporting part to be small than those of the first and the second surfaces in respective; and a buffer, arranged surrounding the supporting part for absorbing and buffering stresses.

Abstract: A chip package includes a coreless package substrate and a chip. The coreless package substrate includes an interconnection structure and a ceramic stiffener. The interconnection structure has a first inner circuit, a carrying surface and a corresponding contact surface. The first inner circuit has multiple contact pads disposed on the contact surface. The ceramic stiffener is disposed on the carrying surface and has a first opening. In addition, the chip is disposed on the carrying surface and within the first opening and electrically connected to at least one of the contact pads.

Abstract: A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.

Abstract: A semiconductor device is provided, which comprises: a die including an active surface; a multiplicity of bond pads formed on the active surface of the die, wherein a first one of the bond pads is larger than a second one of the bond pads; and a multiplicity of solder bumps, each formed over a corresponding bond pad, wherein the multiplicity of solder bumps include a first solder bump formed over the first bond pad and a second solder bump formed over the second bond pad, the first solder bump having a footprint that is substantially larger than the second solder bump and a maximum diameter that is substantially larger than the second solder bump.

Abstract: A semiconductor device, including a semiconductor chip having electrodes, a substrate having an interconnect pattern, and an adhesive, the adhesive having a first portion and a second portion, the first portion interposed between a surface of the substrate on which the interconnect pattern is formed and a surface of the semiconductor chip on which the electrodes are formed, the second portion not overlapping with the semiconductor chip. Further disclosed is the semiconductor device mounted on the circuit board and an electronic instrument having the semiconductor device.

Abstract: A method for manufacturing a probe unit includes: (a) preparing a substrate; (b) forming a hollow part in the substrate; (c) forming a sacrificial layer that buries the hollow part on the substrate; (d) forming a first layer on the substrate, wherein one end of the first layer is positioned on the sacrificial layer; (e) forming a second layer on the first layer at least excepting the one end; and (f) removing the sacrificial layer.

Abstract: A semiconductor device including: a semiconductor section in which an element is formed; an insulating layer formed on the semiconductor section; an electrode pad formed on the insulating layer; a contact section formed of a conductive material provided in a contact hole in the insulating layer and electrically connected with the electrode pad; a passivation film formed to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; a bump formed to be larger than the opening in the passivation film and to be partially positioned on the passivation film; and a barrier layer which lies between the electrode pad and the bump. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad.

Abstract: An integrated circuit includes a metallization layer, a first metal line in the metallization layer, and a first via electrically connected to the first metal line. The first via has a first via width and a first pitch from a nearest via on a neighboring metal line, wherein the first pitch is a minimum pitch of all vias on the metallization layer. The integrated circuit further includes a second metal line in the metallization layer, and a second via electrically connected to the second metal line. The second via has a second pitch greater than about 1.1 times the first pitch. The second via has a second via width greater than the first via width but no more than about 1.4 times the first via width.

Abstract: An electro-optical device includes a substrate that holds an electro-optical material; and a flexible substrate that is connected to the substrate. The flexible substrate has a first connecting portion that is arranged on one surface of the substrate; and a second connecting portion that is arranged on the other surface of the substrate.

Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.

Abstract: Semiconductor devices having conductive lines with extended ends and methods of extending conductive line ends by a variable distance are disclosed. An end of a first conductive feature of an interconnect structure is extended by a first distance, and an end of a second conductive feature of the interconnect structure is extended by a second distance, the second distance being different than the first distance. Ends of conductive features that are positioned close to adjacent conductive features are preferably not extended.

Abstract: A high frequency IC package mainly includes a substrate, a bumped chip, and a plurality of conductive fillers where the substrate has a plurality of bump holes penetrating from the top surface to the bottom surface. The active surface of the chip is attached to the top surface of the substrate in a manner that the bumps are inserted into the bump holes respectively. The conductive fillers are formed in the bump holes to electrically connect the bumps to the circuit layer of the substrate. The high frequency IC package has a shorter electrical path and a thinner package thickness.

Abstract: A semiconductor device comprises a plurality of semiconductor constructions being mutually laminated each having a semiconductor substrate and a plurality of external connection electrodes arranged on the semiconductor substrate respectively, an insulating layer formed around the peripheries of the semiconductor constructions, an upper layer insulating film formed on an uppermost one of the semiconductor constructions and the insulating layer, and upper layer wirings arranged on the upper layer insulating film by electrically connecting to the external connection electrodes of semiconductor constructions.

Abstract: A plurality of vertically spaced-apart microsprings are provided to increase microspring contact force, contact area, contact reliability, and contact yield. The microspring material is deposited, either as a single layer or as a composite of multiple sub layers, to have a tailored stress differential along its cross-section. A lower microspring may be made to push up against an upper microspring to provide increased contact force, or push down against a substrate to ensure release during manufacture. The microsprings may be provided with similar stress differentials or opposite stress differentials to obtain desired microspring profiles and functionality. Microsprings may also be physically connected at their distal ends for increased contact force. The microsprings may be formed of electrically conductive material or coated with electrically conductive material for probe card and similar applications.

Abstract: In an integrated circuit assembly, know good die (KGD) are assembled on a substrate. Interconnect elements electrically connect pads on a die attached to the substrate to traces or other electrical conductors on the substrate or to pads on another die attached to the substrate. The substrate may have one or more openings, exposing pads of the die. The assembly may comprise one or more dice.

Abstract: An explanation is given of an integrated interconnect arrangement having a plurality of interconnects that cross over one another at two crossover sections. By virtue of this measure, it is possible to achieve a uniform current flow in all three interconnects even at very high frequencies.

Abstract: A package includes a carrier, a first chip, a first dielectric layer and at least one first connecting part. The carrier has a first surface and a second surface, and at least one first pad is disposed on the second surface. The first chip is disposed on the first surface. The first dielectric layer is disposed on the first surface and covers the first chip. The first connecting part is disposed in the first dielectric layer and disposed around an edge of the first chip to electrically connect the first chip with the first pad. A package module of the package is also disclosed.

Abstract: A method of electrically linking contacts of a semiconductor device to their corresponding digit lines. The method includes disposing a quantity of mask material into a trench through which the contact is exposed. The mask also abuts a connect region of a conductive element of a corresponding digit line and, therefore, protrudes somewhat over a surface of the semiconductor device. A layer of insulative material is disposed over the semiconductor device with the mask material being exposed therethrough. The mask material is then removed, leaving open cavities that include the trench and a strap region continuous with the trench and with a connect region of the corresponding digit line. Conductive material is disposed within the cavity and electrically isolated from conductive material disposed in adjacent cavities, which define conductive plugs or studs and conductive straps from the conductive material.

Abstract: Provided are a chip, a chip stack, and a method of manufacturing the Same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.

Abstract: A semiconductor device including an intermediate insulating film formed over a plurality of first conductors over a semiconductor substrate. Contact holes are formed in the intermediate insulating film over the first conductors, and contact plugs are buried in the contact holes, respectively. A plurality of second conductors are formed over the plurality of contact plugs on the intermediate insulating film, respectively, and are electrically connected to the plurality of first conductors via the contact plugs. In certain regions of the semiconductor device, the contact plugs may terminate within the intermediate insulating film, thereby electrically insulating the second conductors from the first conductors.

Abstract: Wirings each having a side face with a different angle, which is made accurately, in a desired portion over one mother glass substrate are provided without increasing the steps. With the use of a multi-tone mask, a photoresist layer is formed, which has a tapered shape in which the area of a cross section is reduced gradually in a direction away from one mother glass substrate. At the time of forming one wiring, one photomask is used and a metal film is selectively etched, whereby one wiring having a side face, the shape (specifically, an angle with respect to a principal plane of a substrate) of which is different depending on a place, is obtained.

Abstract: Disclosed is a printed wiring board comprising an insulating layer having a rectangular flat shape and provided with fibers in the layer, the direction of the fiber in the layer being almost parallel to any side of the rectangle, a reference potential layer disposed on one surface side of the insulating layer, a plurality of wiring patterns for signal transmission disposed on the other surface side of the insulating layer so as to have nearly similar angles respectively with respect to the direction of the fiber in the insulating layer, and a pad portion to mount a semiconductor device, disposed on the other surface side of the insulating layer to conduct the plurality of wiring patterns.

Abstract: Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between patterns in the formation of a finer pattern below resolution limits of a photolithography process by double patterning are also provided. A first hard mask layer and/or a second hard mask layer may be formed on a layer of a substrate to be etched. A first etch mask pattern of a first pitch may be formed on the second hard mask layer. After a buffer layer is formed on the overall surface of the substrate, a second etch mask pattern of a second pitch may be formed thereon in a region between the first etch mask pattern. The buffer layer may be anisotropically etched using the second etch mask pattern as an etch mask, forming a buffer layer pattern.

Abstract: The power semiconductor package includes a semiconductor mounting substrate, a mother case having an opening and containing the semiconductor mounting substrate therein, a securing member having a plurality of securing positions formed along a rim constituting the opening, and a screw terminal and a pin terminal secured at the rim and electrically connected to the semiconductor mounting substrate. The screw terminal and the pin terminal are each secured by the securing member at one of the plurality of securing positions thereof. Thus, the package can adapt to variation in shape and arrangement of terminals due to differences in circuit configuration and the like of the semiconductor apparatuses, and can reduce restriction on the layout within the enclosure.