Abstract: Configuration for testing the bonding positions of conductive drops and test method by using the same is disclosed. In the invention, a special configured contact pad for setting a conductive drop and an associated wire pattern are useful for knowing the drop condition of single or several displaying panels. The contact pad comprises at least two conductive members respectively coupled to two wires; and an isolating portion between conductive members for separation. The normal dropping position of a conductive drop on the contact pad includes at least a portion of the conductive members. Accordingly, the contact pad is originally an open-circuit without conductive drop thereon, but the contact pad is conductive when the contact drop sets on its normal dropping position. Whether the conductive drop forms on the normal dropping position of the contact pad is determined by measuring the electrical properties of the contact pad.

Abstract: The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from the channel forming region. Further, the first impurity region is disposed so as to overlap a side wall, and the side wall is caused to function as an electrode to thereby attain a substantial gate overlap structure. By adopting the structure, a semiconductor device of high reliability can be manufactured.

Abstract: One embodiment of the present invention provides an arrangement of differential pairs of wires that carry differential signals across a semiconductor chip. In this arrangement, differential pairs of wires are organized within a set of parallel tracks on the semiconductor chip. Furthermore, differential pairs of wires are organized to be non-adjacent within the tracks. This means that each true wire is separated from its corresponding complement wire by at least one intervening wire in the set of parallel tracks, thereby reducing coupling capacitance between corresponding true and complement wires. Moreover, this arrangement may include one or more twisting structures, wherein a twisting structure twists a differential pair of wires so that the corresponding true and complement wires are interchanged within the set of parallel tracks.

Abstract: Devices and methods of fabrication thereof are disclosed. A representative device includes a complaint wafer-level package having one or more lead packages. A representative lead package includes a substrate having a plurality of die pads disposed thereon and a plurality of leads attached to the plurality of die pads. In addition, the lead package includes a plurality of pillars made of a low modulus material. Each pillar is disposed between the substrate and at least one lead, and each lead is disposed upon one of the pillars that compliantly support the lead.

Abstract: A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.

Abstract: A method is disclosed of forming an air gap using etch back of an inter layer dielectric (ILD) with self-alignment to metal pattern. The method entails forming a first metallization layer deposited on a first dielectric, forming a second metallization layer deposited on a second dielectric, wherein the second metallization layer is spaced apart from the first metallization layer, forming a sacrificial ILD between the first and second metallization layers, forming a diffusion layer over the first and second metallization layers and over the sacrificial ILD, and removing the sacrificial ILD to form an air gap between the first and second metallization layers. This method is particular applicable for dual copper damascene processes.

Abstract: In a semiconductor device, a plurality of wiring layers each patterned in a required shape are laminated over both surfaces of an insulating base material with insulating layers interposed therebetween, and electrically connected to one another through via holes piercing the insulating layers in the direction of thickness. A chip is mounted in an embedded manner in one insulating layer over at least one surface of the insulating base material. Electrodes of the chip are connected to one wiring layer. Through holes are formed in portions of the insulating base material, the portions corresponding to a mount area for the chip. Via holes are formed on outwardly extending portions (pad portions) of the wiring layer connected to a conductor layer formed at least on the inner walls of the through holes.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.

Abstract: The invention provides a method and device for building one or more passive components into a chip scale package. The method includes the steps of selecting a passive component having a terminal pitch that is a multiple of the package ball pitch of a chip scale package and mounting the selected passive component terminals to ball sites of the package. A preferred embodiment of the invention uses a single metal layer polyamide tape as the substrate of the package. Additional preferred embodiments of the invention are disclosed in which the terminal pitch multiple of the package ball pitch is one or two. Devices corresponding to the disclosed methods are also disclosed.

Abstract: An electroplated wire layout for package sawing comprises a substrate with a plurality of chip arrays disposed thereon. A kerf having two scribe lines is disposed between every two chip arrays. Several solder ball pads corresponding to the chip arrays are disposed on a back surface of the substrate. Each solder ball pad has a solder ball electroplated wire extended into a kerf. There is also a kerf electroplated wire disposed in each kerf and above the scribe lines of the kerf in a zigzag way. The kerf electroplated wire is connected with the solder ball pad electroplated wires to achieve electric connection. By changing the shape of the kerf electroplated wire, the kerf electroplated wire can be easily cut off to enhance the yield and reliability and also lower the cost.

Abstract: A leadless optical electronic package includes a lead frame having a die-attach pad and a plurality of leadless connection pads encapsulated in and extending through an encapsulation defining a planar mounting surface that can be soldered directly to a circuit board. The die-attach pad and connection pads define internal surfaces that remain partially exposed through the encapsulation. The internal surfaces are for attaching an electronic die and making electrical connections between the die and the connection pads. A die mounted on the die-attach pad is cooled more effectively and efficiently than dice in prior optical electronic packages. The leadless connection pads reduce the footprint and height of the package compared with prior optical electronic packages. The encapsulation is adapted for receiving a cover having a cover glass to allow light to pass though the cover and illuminate the die. The cover is adapted to receive an optics component for projecting light through the cover glass onto the die.

Abstract: Bottom electrodes of memory cell capacitors are recessed to prevent electrical shorts between neighboring memory cells. A partially fabricated memory cell capacitor has a bottom electrode comprising titanium nitride (TiN) and hemispherical grained (HSG) silicon. The container housing the capacitor is filled with photoresist and then planarized. The TiN layer is then selectively recessed with a peroxide mixture and subsequently the HSG silicon layer is recessed using tetramethyl ammoniumhydroxide. Thus, the bottom electrode is recessed below the level of particles which may overlie the memory cell capacitors and cause shorts by contacting the bottom electrode.

Abstract: An interconnect includes a pad and at least two vias coupled to the pad. In one embodiment, the pad has five substantially straight edges, one via directly coupled to the pad by being formed substantially beneath the pad, and one via coupled to one of the five substantially straight edges by a tapered conductive segment. In another embodiment, the pad has three vias directly coupled to the pad and formed substantially beneath the pad. A method of forming an interconnect includes forming at least two vias in a substrate and coupling a pad to each of the at least two vias.

Abstract: A method for routing signals in a multilayer substrate is disclosed. One embodiment of a method may comprise providing a multilayer substrate with at least one differential signal line pair aligned along a common plane that is substantially transverse to a top surface of the multilayer substrate, jogging a first differential signal line associated with a differential signal line pair at a first redistribution layer in a direction along the common plane, and jogging a second differential signal line associated with the differential signal line pair at a second redistribution layer along the common plane in a same direction as the first differential signal line to provide a substantially balanced differential signal line pair.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the interposer substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: A three dimensional circuit structure including tapered pillars between first and second signal lines. An apparatus including a first plurality of spaced apart coplanar conductors disposed in a first plane over a substrate; a second plurality of spaced apart coplanar conductors disposed in a second plane, the second plane parallel to and different from the first plane; and a plurality of cells disposed between one of the first conductors and one of the second conductors, wherein each of the plurality of cells have a re-entrant profile.

Abstract: An integrated circuit for an optical encoder comprises a signal processing section for generating a position detection signal from a detection signal of a light receiving element, a belt-like power source potential layer which is formed at least between the signal processing section and the light receiving element and whose potential is pulled up to power source potential, and a plurality of conductive layers formed at various heights higher than the power source potential layer. A connection line which intersects the power source potential layer above the power source potential layer for electrically connecting the light receiving element and the signal processing section is formed by a conductive layer of the plurality of conductive layers other than the lowermost layer, in a region immediately above the power source potential layer. By keeping the power source potential layer as far away from the connection line as possible, power source noise entering the position detection signal is reduced.

Abstract: At least one electrode pad is formed above the surface of a semiconductor substrate. A multilevel interconnection configuration is formed between the electrode pad and the semiconductor substrate. The multiple levels of interconnections in the multilevel interconnection configuration are insulated from one another by an insulating film of low dielectric constant. A dummy interconnection configuration is formed at least within the insulating film around the periphery of the electrode pad.

Abstract: A chip structure can reduce the phenomenon of overcrowding current at the conventional circular opening of the passivation layer and further causing electromigration when the current flows to the bonding pad via the transmission line. The improved structure for the side profile of the opening of the passivation layer is about a circular profile, but the portion near to the transmission line is a straight line or a curving line. When the current flows through this opening, the current density can be uniformly distributed along the straight line or the curving line, and whereby the phenomenon of overcrowding current can be reduced.

Abstract: There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

Abstract: A liquid crystal display device includes a liquid crystal display element and an image signal line drive unit for supplying a gradation/tone voltage and having a plurality of semiconductor integrated circuit devices. Each semiconductor integrated circuit device has an input circuit unit which is provided at a central portion along a longitudinal direction of the semiconductor integrated circuit device and provided in a short side direction of the semiconductor integrated circuit device. A first output terminal section is provided in the longitudinal direction of the semiconductor integrated circuit device on both sides of a central portion in the short side direction of the semiconductor integrated circuit device of the input circuit unit, and a pair of output circuit units are provided on the both sides of the first output terminal section in the short-side direction of the semiconductor integrated circuit device.

Abstract: A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.

Abstract: Disclosed is a substrate for semiconductor package and a wire bonding method using thereof. The substrate is provided with at least one reference mark on its surface to check a loading position and a shift state of a solder mask. The reference mark is composed of a combination of a reference pattern and a solder mask opening and is positioned in any location on an outer peripheral edge of a die attachment region. The reference mark may take various shapes. A method for checking a solder mask shift using the reference mark includes comparing a design value of the reference pattern and the solder mask opening with the reference pattern and the solder mask opening, which are formed in an actual material. After the solder mask shift is calculated, a wire bonding coordinate is newly constructed in consideration of the solder mask shift. This minimizes the wire bonding error.

Abstract: A semiconductor die and an associated low resistance interconnect located primarily on the bottom surface of such die is disclosed. This arrangement provides a flexible packaging structure permitting easy interconnected with other integrated circuits; in this manner, a number of such circuits can be stacked to create high circuit density multi-chip modules. A process for making the device is further disclosed. To preserve structural integrity of a wafer containing such die during manufacturing, a through-hole via formed as part of the interconnect is filled with an inert material during operations associated with subsequent active device formation on such die.

Abstract: A bonding pad design, comprising: a substrate; a lower series of metal pads upon the substrate; and an intermediate series of metal pads over the lower series of metal pads. The lower series of metal pads and the intermediate series of metal pads being connected by a respective series of intermediate interconnects and each series of intermediate metal pads being interlocked by a respective series of extensions.

Abstract: An integrated circuit is packaged using a package substrate that has a bottom side with a regular array of connection points and a top side with the integrated circuit on it. The package substrate also has vias that are present to provide electrical connection between the top and bottom sides. The vias have a via capture pad that is used to directly receive a wire bond. Thus, the wires from the integrated circuit to the top side directly contact the vias at their capture pads. In such a connection there is then no need for a trace from location where the wire is bonded on the top side to the via. This saves cost. Further this makes the package substrate useful for more than one type of integrated circuit.

Abstract: An apparatus in one example includes a compliant component for supporting an electrical interface component that serves to electrically and mechanically couple a die with a separate layer. In one example, the compliant component, upon relative movement between the die and the separate layer, serves to promote a decrease in stress in one or more of the die and the separate layer. The apparatus in another example includes a compliant component for supporting an electrical interface component that serves to create an electrical connection between a die and a separate layer. The compliant component, upon relative movement between the die and the separate layer, serves to promote maintenance of the electrical connection.

Abstract: Methods and apparatuses are provided for protecting an interconnect line in a microelectromechanical system. The interconnect line is disposed over a substrate for conducting electrical signals, such as from a bonding pad to a mechanical component to effect movement as desired of the mechanical component. A first protective covering is disposed over a first portion of the interconnect line and a second protective covering is disposed over a second portion of the interconnect line. The first protective covering is provided in electrical communication with the substrate and the second protective covering is electrically isolated from the substrate.

Abstract: The invention relates to a wiring board comprising a board having an electrode and being coated with an insulation layer with a hole for exposing the electrode; a wiring comprising a Cr or Ti layer, which is connected to the electrode and closely contacts with the insulation layer, and of a Cu layer which is closely contacts with the Cr or Ti layer; a protective film which covers the wiring and is provided with another hole for soldering; and a solder for the outer connection which is mounted in the both holes and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.

Abstract: Provided are methods and composition for forming diamond metal-filled patterns above an integrated circuit substrate. A metal layer is formed above the integrated circuit substrate, which is then patterned such that a metal line is created. A plurality of diamond-shaped metal regions are then formed at least one of above and adjacent to the metal line formed on the integrated circuit substrate such that the density of metal on the integrated circuit substrate is greater than a specified density, thereby ensuring that a surface of dielectric formed above the metal line remains substantially planar after application of CMP to the dielectric layer.

Abstract: A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The insulating layer is formed on a second area of the semiconductor chip so as to expose the electrode pads. The first conductive patterns provide a ground potential and are formed on the insulating layer. The second conductive pattern transfers a signal. The second conductive pattern is formed on the insulating layer and located between the first conductive patterns. The external terminals are formed on the first and second patterns at the second area.

Abstract: A stackable semiconductor package is disclosed that includes a semiconductor die coupled to a metal leadframe. The semiconductor die is coupled to a die pad and is electrically coupled to leads of the leadframe. The semiconductor die, the die pad, and an inner lead portion of each of the leads is embedded in an encapsulant, and an outer lead portion of each of the leads is free of the encapsulant. A surface of the die pad and of the inner lead portion of each of the leads is exposed in a plane with an exterior first surface of the encapsulant. The outer lead portion is vertically such that a mounting surface of the outer lead portion is provided below an opposite second surface of the encapsulant. Other semiconductor packages or electronic devices may be stacked on and electrically coupled to the exposed surface of the inner lead portions.

Abstract: An interconnect substrate including a first substrate on which a first interconnect pattern is formed, having a mounting region for an electronic chip; and a second substrate on which a second interconnect pattern electrically connected to the first interconnect pattern is formed. The second substrate includes a region to which at least a part of the first substrate is adhered, and a mounting region for an electronic chip.

Abstract: A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

Abstract: The size of a power amplifier module is reduced. The power amplifier module includes a module substrate, a lower chip flip-connected to the module substrate, an upper chip stacked face up onto the lower chip, a common electrode disposed on a back surface of the upper chip, plural wires for connecting the upper chip and the module substrate with each other, plural wires for connecting the common electrode and the module substrate with each other, plural chip parts mounted on the module substrate, and a sealing portion formed on the main surface of the module substrate. The common electrode is connected to the module substrate through wires to strengthen the GND of the upper chip. Since the lower chip is flip-connected to the module substrate, the difference in size between the upper and lower chips is diminished to attain a reduction in size of the power amplifier module.

Abstract: A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.

Abstract: A variety of pad arrangements are provided for semiconductor devices for reducing the likelihood of bonding failures, particularly those due to shorts, and/or for reducing the difference in length between bonding wires to decrease signal skew during operation of the semiconductor device and improve signal integrity.

Abstract: A semiconductor component for electrical coupling to a substrate (230) includes: a semiconductor chip (110); a non-leaded leadframe (120) including a plurality of electrical contacts (130) located around a periphery (111) of the semiconductor chip; a first electrical conductor (140) electrically coupling together the semiconductor chip and the non-leaded leadframe; and a mold compound (210) disposed around the semiconductor chip, the first electrical conductor, and the plurality of electrical contacts. At least one electrical contact of the plurality of electrical contacts includes: a first surface (310) having a first surface area for electrically coupling to the semiconductor chip; and a second surface (320) opposite the first surface and having a second surface area for electrically coupling to the substrate, where the second surface area is larger than the first surface area.

Abstract: An interconnection layout is provided. The interconnection layout includes a lower metal wiring layer (Metal—n) being drawn in a first direction; an upper metal wiring layer (Metal—n+1) being drawn in a 45-degree direction with respect to a second direction being normal to the first direction; and a first and second metal vias having different dimensions interposed between the lower metal wiring layer and the upper metal wiring layer for electrically connected the two metal wiring layers, and wherein the first metal via has the dimension that is larger than the dimension of the second metal via thereby compensating non-uniform current flowing through one of the two metal wiring layers.

Abstract: A semiconductor device comprising element regions formed in a semiconductor substrate, conductor plugs embedded in an interlayer insulation film, and wiring layers connected to the plugs, wherein the plugs are arranged on a straight line orthogonal to a longitudinal direction of the wiring layer in the same pitch as the wiring layers such that the straight line and upper surfaces of the plugs are superposed each other, and when the plugs are viewed in a cross section parallel to a main surface of the substrate and a distance which is between those two edge points of each of the plugs where a split line which passes through a center of each of the plugs passes is defined as a contact diameter, the contact diameter has three or more maximum values and three or more minimum values while the split line is rotated in the cross section by 360 degrees.

Abstract: A thin film multi-layer wiring substrate comprising a plurality of wiring layers, each adjacent pair of wiring layers being separated by an insulating layer, wherein at least one of the wiring layers includes wiring formed by an inner conductor member and a conductor layer surrounding the periphery thereof through an insulating material.

Abstract: A method and apparatus for supporting a microelectronic substrate. The apparatus can include a microelectronic substrate and a support member carrying the microelectronic substrate. The apparatus can further include a first connection structure carried by the support member. The first connection structure can have a first bond site configured to receive a flowable conductive material, and can further have at least two first elongated members connected and extending outwardly from the first bond site. Each first elongated member can be configured to receive at least a portion of the flowable conductive material from the first bond site, with none of the first elongated members being electrically coupled to the microelectronic substrate. The assembly can further include a second connection structure that is electrically coupled to the microelectronic substrate and that can include second elongated members extending away from a second bond site.

Abstract: A semiconductor device has a die (10) overlying and electrically connected to a support structure (11), such as a substrate or a lead frame, via a plurality of interconnects. Aggressor interconnects (32, 38) are noise sources to victim interconnects (29, 59) carrying sensitive signals. An arrangement of shield interconnects (51-58) surround the victim interconnect (29, 59) in a cage-like structure to significantly block noise from the aggressor interconnect. In one form the shield interconnects are ground or power supply and the victim interconnect may be, for example, a clock signal or an RF signal. The number of shield interconnects and the number of protected victim interconnects varies depending upon design requirements. Either wire bonding or other interconnect technology (e.g. bump) is applicable.

Abstract: A number of apparatus for packaging semiconductor devices using an epoxy ink or adhesive. In one embodiment, a pattern of epoxy is formed on the bottom surface of die attach pad of a leadless semiconductor package. The pattern of epoxy divides the undersurface of the die attach pad into a grid of small squares. A small amount of solder paste is then applied within each square of the grid. When the leadless package is attached to a substrate, each of the solder balls evenly reflows to the same approximate height. This enhances the attachment of the package to the substrate and reduces the need for rework. In another embodiment, a protective layer of epoxy or ink is provided around the periphery of the die after it has been attached to the die attach pad. The protective layer covers any solder material that may leach out from between the die and the die attach pad. In another embodiment, a protective layer of epoxy or ink is provided on the exposed tie bars of the lead frame after encapsulation.

Abstract: Carbon nanotube structures are provided, in which the networks with a desired area and volume, where the carbon nanotubes are electrically or magnetically connected, are formed and the method for easily manufacturing the carbon nanotube structures with less carbon nanotube structures. Carbon nanotube devices are also provided, to which the useful carbon nanotube structures mentioned above are applied. A method for manufacturing carbon nanotube structures includes the steps of applying carbon nanotubes to a low-viscosity dispersion medium to obtain a high-viscosity dispersing liquid which includes carbon nanotubes, and forming a network of the carbon nanotubes having electrical and/or magnetic connections therebetween by removing the low-viscosity dispersion medium from the high-viscosity dispersed liquid.

Abstract: The density of plated thru holes in a glass fiber based chip carrier is increased by off-setting holes to positions in which fibers from adjacent holes will not connect. Elongated strip zones or regions having a width approximately the diameter of the holes and running along orthogonal columns and rows of holes, parallel to the direction of fibers, define regions of fibers that can possibly cause shorting between holes. Rotating a conventional X-Y grid pattern of equidistant holes so as to position, for example, alternate holes in one direction between the elongated strip zones running in the opposite direction significantly increases the distance between holes along the elongated strip zones running in each direction. The holes are positioned between elongated strip zones with sufficient clearance to compensate for variations in the linear path of fibers.

Abstract: An interconnect structure for an integrated circuit having several levels of conductors is disclosed. Dielectric pillars for mechanical support are formed between conductors in adjacent layers at locations that do not have vias. The pillars are particularly useful with low-k ILD or air dielectric.

Abstract: A method of manufacturing a semiconductor device involves mounting a semiconductor chip, formed on top with a main electrode and a subelectrode smaller in area than the main electrode, on a die pad of an external lead frame through a first bonding material, mounting an inner lead frame in which plural inner leads for connecting the main electrode and the subelectrode on the chip to corresponding connecting pads of the external lead frame are joined together by a tie bar on the chip and the external lead frame through a second bonding material, heating the first and second bonding materials simultaneously for electrically connecting and fixing the chip to the die pad and the inner leads to the electrodes on the chip and the connecting pads of the external lead frame, and cutting the tie bar to separate the inner lead frame into the plural inner leads.

Abstract: A surface mountable multi-chip device is provided which includes first and second lead frames portions and at least two chips. The lead frame portions each include a header region and a lead region. Beneficially, the header regions of the first and second lead frame portions lie in a common plane, with at least one semiconductor chip being placed on each of the header regions. A conductive member link is placed on top of the two chips to electrically and mechanically interconnect the chips.

Abstract: A semiconductor device includes a base substrate provided with a base wiring. A first substrate includes a first wiring to be electrically connected to the base wiring and is provided above the base substrate. A first semiconductor element includes a first electrode to be electrically connected to the first wiring and is provided between the base substrate and the first substrate. A second substrate includes a second wiring to be electrically connected to the base wiring and is provided above the first substrate. A second semiconductor element includes a second electrode to be electrically connected to the second wiring and is provided between the first substrate and the second substrate and above the first semiconductor element. The first substrate has a first region where the first semiconductor element is provided below, a second region where a portion of the first wiring that connects to the base wiring is located, and a first bent section between the first region and the second region.