Abstract: A sealing material exhibiting excellent sealing performance while keeping a satisfactory balance between a variety of characteristics is provided so that the sealing structure is simplified and the quantity of the sealing material is reduced. As a result, a solar cell, the cost of which can significantly be reduced and which can be operated stably for a long time while exhibiting excellent performance can be provided. A suitable resin composition for sealing contains at least a hardening resin and a thermoplastic resin which has a number average molecular weight larger than the number average molecular weight of the hardening resin and which is soluble in the hardening resin.

Abstract: Disclosed is a plastic package type semiconductor device having a semiconductor element encapsulated with an epoxy resin composition, said resin composition containing as indispensable components (a) an epoxy resin, (b) a curing agent, (c) a curing promotor, (d) a first inorganic powder having an average diameter of 5 to 40 .mu.m and a smooth outer surface substantially free from edges, ridges and projections, and (e) a second inorganic powder having an average diameter of 0.1 to 10 .mu.m and a heat conductivity of at least 4.0 W/m.multidot.K, the mixing amount of the first inorganic powder (d) being 10 to 50% by volume based on the sum of the first inorganic powder (d) and the second inorganic powder (e).

Abstract: A solar cell, comprising a solar cell unit and a protective layer formed on the solar cell unit, wherein the protective layer comprises conductive particles.

Abstract: A semiconductor element mounted on a board is sealed with a sealing resin, The semiconductor element is electrically bonded to the board through a soldering bump. The sealing resin includes a silicone gel as a base resin and a filler filled into a silicone gel. A diameter of the filler is equal to or shorter than the distance between the semiconductor element and the board, and a shape of the filler is spherical to improve a thermal conductivity of the sealing resin. The relationship between a coefficient .alpha. of a linear expansion and a complex modulus of elasticity G* of the sealing resin is defined as follows to reduce a force pushing up the semiconductor element:.alpha..ltoreq.0.033(G*-451).sup.-0.56.

Abstract: According to a first embodiment of the present invention, there is provided a resin encapsulation type semiconductor device, comprising a semiconductor element and an epoxy resin composition used as an encapsulating resin, the composition containing as essential components:(a) an epoxy resin represented by formula (I) given below: ##STR1## where R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are hydrogen or an alkyl group respectively, and n.gtoreq.0,(b) a phenolic resin curing agent,(c) an imidazole compound, and(d) triphenyl phosphate.In the first embodiment of the present invention, a heat resistance skeletal structure is formed by the epoxy resin (a) and the phenolic resin curing agent (b) in the epoxy resin composition after cured, leading to an improved resistance to heat and to an improved package crack resistance.

Abstract: An improved solar cell characterized in that the grid electrode has a coating comprising an epoxy resin of 20 g/m.sup.2 .multidot.day.multidot.0.1 mm/40.degree. C..multidot.90%RH or less in moisture permeability which is disposed so as to cover the entire exposed exterior of said grid electrode. The solar cell module is free of short-circuits between the grid electrode and the lower electrode even upon repeated use under severe environmental conditions of high temperature and high humidity, and continuously exhibits a desirable photoelectric conversion efficiency over a long period of time.

Abstract: A semiconductor rectifying device, suitable for installation in vehicles, comprises a cup-shaped metallic container, a semiconductor chip having a pn junction, one of whose main surfaces is bonded to the bottom surface of the container, a lead bonded to the other main surface of the semiconductor chip, and a silicone resin layer containing silica powder, with which layer an exposed portion of the semiconductor chip is covered.

Abstract: A semiconductor element includes a vertical power MOSFET whose base material is silicon crystal having (100) plane as a major face. The semiconductor element is brazed to the surface of a metal plate with a brazing filler metal. By means of a transfer molding technology, the semiconductor element, the metal plate, inner lead wires and parts of external terminals are sealed in a resin having a linear expansion coefficient 1.2 times larger than that of the metal plate.The ON resistance of the field effect transistor can be decreased by 10% or more, and the exothermic reaction of a semiconductor device itself is restrained.

Abstract: Disclosed is a refractory covercoat composition useful in making two-sided circuitries. The refractory composition contains glass frit, and an inorganic binder including at least one selected from the group consisting of ZrO.sub.2, Al.sub.2 O.sub.3, SiO.sub.2, BaO, CaO, MgO and La.sub.2 O.sub.3. The refractory covercoat has an elevated softening point so that the covercoat protects a printed conductor circuit from damage due to contact with a firing furnace conveyor belt.

Abstract: A semiconductor device includes a housing, a semiconductor element disposed in a lower section inside the housing, an external lead terminal at least partially disposed within the housing, a gelled filler disposed within the housing, the semiconductor element and at least a portion of the external lead terminal being embedded in the gelled filler, a hardened sealing resin layer disposed over the gelled filler, and at least one internal pressure absorbing chamber having a pocket-type sealed space, the internal pressure absorbing chamber passing through the sealing resin layer and being open at an upper surface side of the gelled filler. The semiconductor device prevents a rise in the internal pressure of the housing in response to thermal expansion of the gelled filler sealed within the housing, and the absorption of external moisture by the gelled filler.

Abstract: A resin-sealed semiconductor device, including a lead frame. A semiconductor chip is formed on the lead frame and is electrically connected with the lead frame. At least a part of the lead frame and the semiconductor chip are sealed with a theremosetting resin which includes a base resin, aluminum oxide and fused silica. Stress acting on the semiconductor chip is reduced because the thermal expansion coefficient of the thermosetting resin becomes low due to the fused silica. At the same time the thermal conductivity of the thermosetting resin is increased because of the aluminum oxide.

Abstract: A transfer molded plastic package having a cavity for accommodating a semiconductor chip is disclosed. A leadframe assembly process is shown wherein the leadframe finger pattern is provided with a resilient or elastic O-ring bead. Top and bottom housing plates which have dimensions that are larger than the bead form the upper and lower surfaces of the package. These plates can be formed of any suitably rigid material. They may be composed of ceramic in low power devices. For high power operation at least one metal plate can be employed. The chip or chips are connected to the lead frame and, along with the top and bottom plates, is located in a transfer mold. The plates are in registy and located so that their outer edges extend beyond the O-ring bead. The mold cavities include faces which press against the plates which are held apart by the O-ring bead so that the bead is compressed by the mold closure.