Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.

Abstract: Provided herein is a single module bi-directional optical transmitting and receiving system including a transmitter transmitting an optical signal by converting a down-signal, and obtaining an up-signal by converting y the optical signal that is received, and a receiver transmitting the optical signal by converting the up-signal, and obtaining the down-signal by converting the optical signal that is received, wherein the transmitter and the receiver include a single optical transmitting module including a monitor receiving module, transmit the optical signal through the single optical transmitting module, and receive the optical signal through the monitor receiving module.

Abstract: A lead frame for an LED package includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes separated first and second connecting surfaces. Top surfaces of the bonding electrode, the first connecting electrode, and the second connecting electrode are exposed, and support and electrically connect with light emitting chips. LED packages can be mounted on the lead frame and electrically connect with each other. The conductive layout of the lead frame further permits installation of a zener diode which can be connected to the LED packages in series or in parallel.

Abstract: A microfluidic optoelectronic tweezers (OET) device can comprise dielectrophoresis (DEP) electrodes that can be activated and deactivated by controlling a beam of light directed onto photosensitive elements that are disposed in locations that are spaced apart from the DEP electrodes. The photosensitive elements can be photodiodes, which can switch the switch mechanisms that connect the DEP electrodes to a power electrode between an off state and an on state.

Abstract: A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.

Abstract: A substrate includes a first electrode layer including a first electrode and a second electrode; a second electrode layer including a first electrode and a second electrode; a third electrode layer including a first electrode and a second electrode; and a resin layer. The first electrode layer is arranged on a first side of the resin layer, the third electrode layer is arranged on a second side of the resin layer opposed to the first side, the second electrode layer is positioned in the resin layer, and the first electrode layer is thicker than the second electrode layer. The first and second electrodes of the first electrode layer are positioned inside a peripheral edge of the first side of the resin layer, and the first and second electrodes of the third electrode layer are positioned inside a peripheral edge of the second side of the resin layer.

Abstract: Disclosed herein is a transfer printing technology. A transfer printing substrate includes a plurality of pillar structures and a sacrificial layer applied thereon. In situ alignment of a transfer layer is performed by the pillar structures and a structural confinement by a concave structure formed on a bottom surface of the transfer layer corresponding to the pillar structures, or a chemical bond of the pillar structure and the transfer layer. In the in situ alignment by the structural confinement, the remaining sacrificial layer after being removed may serve as an adhesive component. The transfer process is performed by a separation of the bond by the sacrificial layer, a cutting of the pillar structures in the chemic bonding state of the pillar structures and the transfer layer, or a separation of the bond between the pillar structures and the handling substrate.

Abstract: A method for processing information and an electronic device are disclosed according to the disclosure, and a display unit of the electronic device is capable of being bended with certain curvature. The method includes: once notification signal for notifying the electronic device that a first plane image needs to be displayed is received, detecting and obtaining current bending state parameters for characterizing a current bending state of the display unit based on the notification signal; acquiring the first plane image from memory; performing image processing on the first plane image according to the current bending state parameters; and transmitting the second image to video memory of the display unit, to make a projected image of the second image on a preset plane is the same as the first plane image when the second image is displayed on the display unit of the curved shape.

Abstract: A light emitting device includes a base, a first light emitting unit, a second light emitting unit, a light conversion layer and a lens. The base has a first side slot, a second side slot, and a central slot separated from the first side slot and the second side slot, and the first side slot is formed in a separated recess configuration with a long axis and a short axis. The first light emitting unit is installed in the central slot, and the second light emitting unit is installed in the first side slot. The light conversion layer is covered onto the first light emitting unit or the second light emitting unit, and the lens covers the light conversion layer, the central slot, the first side slot, and the second side slot. The first slot and the lens have first similar contour lines in a top view.

Abstract: A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a growth substrate, forming a reflective layer on a first surface of the light emitting structure corresponding to a surface of the second conductivity-type semiconductor layer, forming bumps on the first surface, the bumps being electrically connected to the first or second conductivity-type semiconductor layer and protruding from the reflective layer, bonding a support substrate to the bumps on the first surface, removing the growth substrate, bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed, and removing the support substrate.

Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.

Abstract: A light emitting device and a method of fabricating the same is provided. The device includes an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first and second main surfaces. A reflective side layer surrounds the one or more side surfaces of the LED chip. The reflective side layer has a first main surface and a second main surface opposing the first main surface extending in a first direction, and an opening extending between the first and second main surfaces in a second direction substantially perpendicular to the first direction. The opening surrounds the chip. A phosphor film overlies the first main surface of the chip and the first main surface of the reflective side layer. At least one electrode is disposed on the second main surface of the chip.

Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.

Abstract: An electronic arrangement (1) comprising a carrier (2), on which at least one connecting area (6) is arranged. At least one electronic component (3a, 3b, 3c) is fixed on the connecting area (6) by means of a contact material (4). A covering area (5) surrounds the connecting area (6) on the carrier (2). At least one covered region (15, 16, 17, 18, 19) is covered by a covering material (10). The covering material (10) is designed in such a way that an optical contrast between the covering area (5) and the covered region (15, 16, 17, 18, 19) is minimized.

Abstract: A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode.

Abstract: Provided is an article having a condition-dependent image, said article comprising (a) a substrate having a surface, (b) upon the surface of the substrate, one or more layers of a clear coating comprising a plurality of beads. Also provided are a method of producing such an article and a method of observing the image on such an article.

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

Abstract: The present inversion provides an organic display device comprising at least infrared display pixel, the infrared display pixel includes a transparent substrate which is deposited with a first electrode layer, an infrared organic light emitting layer and a second electrode layer thereon, and the infrared organic light emitting layer is filled with an infrared light emitting material. The present invention can allow the organic display device to carry out large area of infrared display; and the present invention uses the flexible transparent substrate, so as to conveniently use and carry the organic display device.

Abstract: An arrangement for generating light including a light emitting diode, including a conversion element, is proposed, wherein the conversion element is arranged above the light emitting diode and is provided for at least partly changing the wavelength of the electromagnetic radiation emitted by the light emitting diode, wherein the conversion element is designed in such a way that the light impinging on the conversion element from outside in a first color range is reflected, wherein the conversion element is surrounded by an edge region, wherein the edge region is designed in such a way that light impinging on the edge region in a second color range is reflected, wherein the second color range at least partly has a color range complementary to the first color range.

Abstract: The invention relates to an optoelectronic module (112), more particularly to an optoelectronic chip-on-board module (114). The optoelectronic module (112) comprises a substrate (116), wherein the substrate (116) has a planar design. Furthermore, the optoelectronic module (112) comprises a plurality of optoelectronic components (118) that are arranged on the substrate (116). The optoelectronic module (110) further comprises at least one optical system (120) applied onto the substrate (114), more particularly a microoptical system having a plurality of microoptical elements. The optical system (120) comprises at least one primary optical system (124) that is adjacent to the optoelectronic components (116) and at least one secondary optical system (138).

Abstract: An optoelectronic assembly includes a printed circuit board (PCB) defining opposite upper and lower surfaces, and equipped, on the upper surface, with an active component and an Integrated Circuit (IC) linked to each other via the flip chip technology, a lens module located on the side of the lower surface and communicating with the active component through via holes in the PCB, and a fiber assembly located in the lens module to be optically coupled to the active component via said lens module.

Abstract: The image forming apparatus includes an exposure head. The exposure head includes an organic EL element array and a rod lens array, and forms an image on a photosensitive drum by irradiating light emitted from each organic EL element on the photoreceptor via each rod lens. In the exposure head, light emitting from the organic EL element is controlled by a controller. The controller generates a filter coefficient for correcting a spot shape based on the difference between the spot shape of the light spot on the photosensitive drum and the target spot shape on the photosensitive drum. It is noted that the difference is generated by the deviation between the distance from the organic EL element to the photosensitive drum, and the correct focus position.

Abstract: A high-performance optical device is provided. An optical device includes a first transmitting portion that is disposed at the center of a predetermined area in a first substrate, a light-receiving portion that receives light passing through the first transmitting portion, N light-emitting portions (N is an integer of 2 or more) that are disposed around the first transmitting portion in the predetermined area, and a control circuit that controls the light-emitting portions. The control circuit is functionally divided into N control portions, namely, first to N-th control portions. The N control portions are disposed in areas overlapping the N light-emitting portions, respectively, when viewed from above. The optical device can reduce noise light and achieve a high S/N ratio, and also the sensitivity of the optical device can be improved.

Abstract: A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

Abstract: There is provided a lighting device that comprises at least one 600-630 nm solid state light emitter and at least one light source emitting light within an area on a 1931 CIE Chromaticity Diagram defined by a first set of points having x, y coordinates of (0.32, 0.40), (0.36, 0.48), (0.43, 0.45), (0.42, 0.42), (0.36, 0.38), or a second set of points having x, y coordinates of (0.29, 0.36), (0.32, 0.35), (0.41, 0.43), (0.44, 0.49), (0.38, 0.53). Some embodiments further comprise at least a first power line. Also provided are methods that comprise illuminating at least one light source to emit light within one of the areas defined above, and illuminating at least one 600-630 nm emitter.

Abstract: Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.

Abstract: An organic light-emitting display apparatus includes a gate electrode of a thin-film transistor (TFT) and a gate wiring electrically connected to the gate electrode and formed on different layers with an insulating layer disposed between the gate electrode and the gate wiring.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Abstract: Provided herein is a capacitive-type touch panel. The capacitive-type touch panel may include a first transparent substrate, a first conductive layer positioned on the first transparent substrate, a sensor layer having a second conductive layer spaced from the first conductive layer by a spacer, and a second transparent substrate positioned on the sensor layer. The first conductive layer and the second conductive layer may be transparent.

Abstract: The present invention relates to cost effective production methods of high efficiency silicon based back-contacted back-junction solar panels and solar panels thereof having a multiplicity of alternating rectangular emitter- and base regions on the back-side of each cell, each with rectangular metallic electric finger conductor above and running in parallel with the corresponding emitter- and base region, a first insulation layer in-between the wafer and finger conductors, and a second insulation layer in between the finger conductors and cell interconnections.

Abstract: An optical sensor chip device and a corresponding production method. The optical sensor chip device includes a substrate having a front side and a rear side; at least one first optical sensor chip for acquiring a first optical spectral range, the chip being attached to the substrate; and a first sealed cavern fashioned above an upper side of the first optical sensor chip. The first optical sensor chip is situated on a first side of the first cavern, and a first optical device is situated on an opposite, second side of the first cavern.

Abstract: There is presented a light emitting device, having plural light emitting elements disposed on a substrate, in which a protection element, such as a zener diode, can be disposed at an appropriate position. The light emitting device includes: a substrate; a light emitting section having plural light emitting elements disposed in a mounting area on the substrate; a positive electrode and negative electrode each having a pad section and wiring section to apply voltage to the light emitting section through the wiring sections; a protection element disposed at one of the positive electrode and negative electrode and electrically connected with the other one electrode; and a light reflecting resin formed on the substrate such as to cover at least the wiring sections and the protection element, wherein the wiring sections are formed along the periphery of the mounting area such that one end portions thereof are adjacent to each other.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: An image forming apparatus is provided. The image forming apparatus includes: a photosensitive member; an exposing unit which is opposed to the photosensitive member, and which includes a plurality of light emitting elements arranged in an arrangement direction to expose the photosensitive member; and a body frame which is provided at both sides of the exposing unit in the arrangement direction. The body frame is made of a conductive member. The exposing unit includes an exposing unit body having an exterior made of a resin; and an electrically conductive holding member which is longer than the exposing unit body in the arrangement direction, and which holds the exposing unit body, wherein the holding member is electrically connected to the body frame to be grounded.

Abstract: Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.

Abstract: An opto-electronic component includes a housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. A first cavity and a second cavity are formed in the housing, wherein the radiation-emitting semiconductor chip is arranged in the first cavity and is cast by means of a first casting compound. The radiation-detecting semiconductor chip is arranged in the second cavity and cast by means of a second casting compound, wherein absorber particles are embedded in the second casting compound which are suitable for at least partially absorbing the radiation emitted by the radiation-emitting semiconductor chip.

Abstract: An optical detector module includes a carrier, a photodetector secured to a top surface of the carrier and having a light detecting portion, an anode terminal, and a cathode terminal, an amplifier circuit secured to the top surface of the carrier and having a first edge, an input terminal, and a GND terminal. The input terminal and the GND terminal are located along the first edge. A first wire connects the anode terminal to the input terminal, and to a composite component secured to the top surface of the carrier and having a metal portion and a resistive portion integrated together. The metal portion is in contact with the carrier. A capacitor, having a top surface electrode and a bottom surface electrode is secured to the carrier.

Abstract: A light emitting device package capable of emitting uniform white light and a method for manufacturing the same are disclosed. The light emitting device package includes a package body, an electrode formed on at least one surface of the package body, a light emitting device mounted on the package body, and a phosphor layer enclosing the light emitting device while having a uniform thickness around the light emitting device.

Abstract: A non-coherent light emitting device having at least one organic light emitting or organic charge transporting layer and a structure providing a Bragg grating associated with the light emitting layer is described. The organic light emitting layer having liquid crystalline material is treated to provide alternating zones of isotropic and liquid crystalline material. The combination of alternating zones with the dichroic effects of the aligned zone produces a pseudo 2-D Bragg grating within the light emitting layer.

Abstract: A display substrate and a method of manufacturing the same. The display substrate includes a substrate including an active area and an inactive area, an organic light-emitting diode (OLED) unit disposed on the active area of the substrate, and a transmittance measurement pattern unit disposed on the inactive area of the substrate. The transmittance measurement pattern unit includes a deposition assistant layer pattern disposed on the substrate.

Abstract: A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

Abstract: An optoelectronic element comprises a semiconductor stack layer comprising a first surface and a second surface; a first transparent conductive oxide layer formed on the first surface of the semiconductor stack layer, wherein the first transparent conductive oxide layer comprises at least an opening exposing the first surface of the semiconductor stack layer; and a second transparent conductive oxide layer filled into the opening and covering the first transparent conductive oxide layer; wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer are comprised of a material selected from the group consisting of indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and zinc oxide (ZnO), and the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different refractive indexes.

Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.

Abstract: Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.

Abstract: A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.

Abstract: A light emitting device package includes: a package main body having a chip mounting region surrounded by side walls; lead frames spaced apart from one another, at least one portion thereof being positioned in the chip mounting region; a light emitting device mounted on the chip mounting region; a wire connecting the lead frame and the light emitting device; a lens disposed on the light emitting device; and a lens support unit formed to be higher than the wire in the chip mounting region and supporting the lens such that the lens does not come into contact with the wire.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer.

Abstract: Integrated optical waveguides and methods for the production thereof which have a patterned upper cladding with a defined opening to allow at least one side or at least one end of a light transmissive element to be air clad. The at least one side or at least one end is, for preference, a lens structure unitary with the waveguide or a bend. Also provided is a method of fabricating an optical waveguide with a patterned cladding.