Abstract: An optical device includes: an optical waveguide; and a plurality of diffraction grating layers, provided along the optical waveguide, each including a diffraction grating defined by a discontinuous first semiconductor layer and a second semiconductor layer having a refractive index different from a refractive index of the first semiconductor layer and burying the first semiconductor layer, one diffraction grating layer of the plurality of diffraction grating layers including a third semiconductor layer being continuous with the diffraction grating and made from a material different from materials of the first and the second semiconductor layers.

Abstract: A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

Abstract: An interposer includes grooves (310) for waveguides 104 (e.g. optical fiber cables) coupled to a transducer (120). The grooves are formed by etching a cavity (410) in a substrate (130), filling the cavity with some layer (520), then etching the layer to form the grooves. The grooves can be formed in a separate structure which is then inserted into a cavity in an interposer having electrical circuitry for the transducer. The cavity has outwardly or inwardly sloped sidewalls which can serve as minors (144) or on which the minors are later formed. The substrate can be monocrystalline silicon, in which the inwardly sloped (retrograde) sidewalls are formed by a combination of different etches at least one of which is selective to certain crystal planes. Other features, including non-optical embodiments, are also provided.

Abstract: A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.

Abstract: An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.

Abstract: A complementary metal-oxide semiconductor (CMOS) sensor with an image sensing unit integrated therein is provided. The CMOS sensor includes a first substrate, a CMOS circuit, and a sensing device. The first substrate has the image sensing unit formed thereon. The CMOS circuit is disposed on the first substrate and has a receiving space. The sensing device is disposed in the receiving space. The image sensing unit is located at a position from which the image sensing unit can monitor the sensing device. Accordingly, the image sensing unit monitors the sensing device by sensing its image.

Abstract: A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

Abstract: The present invention provides a stacked-layered thin film solar cell and manufacturing method thereof The manufacturing method includes the steps of: providing a substrate, a first electrode layer and a first light-absorbing layer; providing a mask with a plurality of patterns above the first light-absorbing layer; forming an interlayer made of an opaque, highly reflective material by providing the mask on the first light-absorbing layer, wherein the interlayer has a plurality of light transmissive regions corresponding to the patterns, and the light transmissive regions are provided to divide the interlayer into a plurality of units; and then depositing a second light-absorbing layer on the units and a second electrode layer on the second light-absorbing layer.

Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

Abstract: Light emitting diode systems are disclosed.

Abstract: An object of the present invention is to provide a light emitting device that shows high adhesion between a sealing member and a package member. A light emitting device 100 of the present invention comprises a package 20 with a recess 60 having a bottom face 20a and a side wall 20b, a light emitting element 10 mounted on the bottom face 20a of the recess 60 of the package 20, and a sealing member 40 filled in the recess 60 of the package 20, with which the light emitting element 10 is coated, wherein the package 20 contains, against the entire monomer component, from 5 to 70% by weight of potassium titanate fibers and/or wollastonite, from 10 to 50% by weight of titanium oxide, and from 15 to 85% by weight of a semiaromatic polyamide containing 20 mol % or more of an aromatic monomer, a part of the side wall 20b of the recess 60 of the package 20 has a thickness of 100 ?m or less, and the sealing member 40 is made of silicone.

Abstract: According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin.

Abstract: A semiconductor device sends and receives electrical signals. The semiconductor device includes a first substrate provided with a first circuit region containing a first circuit; a multi-level interconnect structure provided on the first substrate; a first inductor provided in the multi-level interconnect structure so as to include the first circuit region; and a second inductor provided in the multi-level interconnect structure so as to include the first circuit region, wherein one of the first inductor and the second inductor is connected to the first circuit and the other of the first inductor and the second inductor is connected to a second circuit.

Abstract: Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.

Abstract: Optocoupler devices and methods for making and using such devices are described. The optocoupler devices contain a light emitting component (a light emitting diode [LED]) and a light receiving component (a phototransistor [PT]) device that are embedded within the substrate, rather than being attached to the surface of the pre-molded substrate. Such a configuration eliminates the bond wires that are often used when the LED and PT are attached on the substrate, improves the electrical performance, and allows the final optocoupler package to be made smaller and thinner. Other embodiments are described.

Abstract: According to one embodiment, a photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.

Abstract: A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.

Abstract: A sub-mount having a photodiode region, includes a photodiode which has a first conductivity-type layer arranged in a surface portion of the sub-mount of the photodiode region to form a light-receiving surface and a second conductivity-type region arranged below the first conductivity-type layer and is configured to receive at the light-receiving surface a light emitted from a light-emitting element and convert the light into a photocurrent. A peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength of the light-emitting element.

Abstract: This disclosure relates to an organic solar cell and an organic light emitting diode stack. The stack comprises a solar cell portion having a substrate, an electrode, an active layer, and a second electrode. The stack also comprises a light emitting diode portion having a substrate, an electrode, an active layer, and a second electrode. The solar cell portion is laminated to the light emitting diode portion to form a stack. In a variation, the stack comprises a solar cell portion that includes a substrate, an electrode and an active layer. In this variation, there is a connection portion that includes a second substrate, having, a second electrode on one side and a third electrode on the other side of the second substrate. Also in this variation, there is also a light emitting diode portion, which includes a third substrate, an electrode on the third substrate and a second active layer.

Abstract: The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1.

Abstract: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the second light-emitting layer is a light-emitting layer having an electron trapping property.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Abstract: A light emitting diode module is produced using at least one LED and at least two selectable components that form a light mixing chamber. First and second selectable components have first and second types of wavelength converting materials with different wavelength converting characteristics. The first and second wavelength converting characteristics alter the spectral power distribution of the light produced by the LED to produce light with a color point that is a predetermined tolerance from a predetermined color point. Moreover, a set of LED modules may be produced such that each LED module has the same color point within a predetermined tolerance. The LED module may be produced by pre-measuring the wavelength converting characteristics of the different components selecting components with wavelength converting characteristics that convert the spectral power distribution of the LED to a color point that is a predetermined tolerance from a predetermined color point.

Abstract: There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Abstract: A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.

Abstract: An optical module package unit includes a light-emitting chip and a light sensor chip respectively installed in a light-emitting zone and a light-sensing zone on a substrate, a lid of plastic shell integrally formed on the substrate and defining therein a first cavity and a second cavity around the light-emitting chip and the light sensor chip respectively, and two packaging adhesive structures respectively molded in the first cavity and the second cavity to encapsulate the light-emitting chip and the light sensor chip respectively. As the light-emitting chip and the light sensor chip are integrally packaged on the substrate, the packaging cost of the optical module is significantly lowered.

Abstract: An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.

Abstract: A light emitting and/or receiving apparatus in the form of a panel comprising a lattice of electroluminescent conductive polymer, a layer of transparent conductor, a clear substrate above the other layers and an integrated reflective panel located within the lattice layer.

Abstract: An organic EL device includes an array substrate including an insulating substrate and an organic EL element which is disposed above the insulating substrate, a sealing substrate which is disposed on that side of the array substrate, which faces the organic EL element, and is attached to the array substrate, a light sensor which is provided in the array substrate and includes a light-sensing part which receives incident light via the sealing substrate, and a light-shield layer which is disposed between the light sensor and the sealing substrate, and includes an opening portion which is formed right above the light-sensing part of the light sensor.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: Provided is an organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a plurality of pixels; the pixels further include opposing first and second electrodes, and an intermediate layer disposed between the first and second electrodes. The pixels are divided into red, green, and blue sub-pixels. The intermediate layer has a thickness that varies according to the sub-pixels.

Abstract: An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode 15 and a source electrode 16 forming ohmic junction with the undoped AlGaN layer 13 are formed separately from each other on the undoped AlGaN layer 13. A gate electrode 17 composed of metal Ni and Au laminated in this order is formed between the drain electrodes 15 and the source electrode 16 on the undoped AlGaN layer 13. The end portion 17-2 of the gate electrode 17 is formed on the underlying metal 18 formed by a metal containing Ti via an insulating film 14 on a GaN buffer layer 12 surrounding the undoped AlGaN layer 13.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal.

Abstract: A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal.

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.

Abstract: An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin package covers part of the first lead and includes an opening for exposing the three LED chips and two Zener diodes. A single insulating layer bonds the first and second LED chips to the first lead. A single conductive layer bonds the third LED chip and two Zener diodes to the first lead. The Zener diodes are arranged between the first, second LED chips and the third LED chip.

Abstract: Disclosed is a lighting device capable of alleviating unevenness in luminosity upon a member that is being illuminated. A backlit device (lighting device) (10) comprises LEDs (11); a plurality of substrates (12) whereupon the LEDs are mounted; photodiodes (18) that are mounted upon the substrates; and a reflector sheet (13) that is positioned upon the substrates. The LEDs function as light sources for illumination, and transmit visible light signals to the photodiodes that are mounted adjacently thereto upon the substrates. The photodiodes receive the visible light signals from the LEDs that are mounted adjacently thereto upon the substrates.

Abstract: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.

Abstract: An organic EL element includes: an organic EL layer including a transparent electrode, a reflective electrode, and a light-emitting layer; a transparent layer disposed on a light-exiting side of the transparent electrode; and a light extraction structure disposed on a light-exiting side of the transparent layer and having a protruding shape with inclined portions. The transparent layer and the light extraction structure have a larger refractive index than the light-emitting layer. The inclined portions of the light extraction structure satisfy Condition 1 or 2 for extracting guided wave light emitted from the light-emitting layer and incident on the light extraction structure from the light extraction structure to the outside of the organic EL element, in a cross section taken along a plane perpendicular to the reflective electrode, where two inclination angles ?1 and ?2 formed between the reflective electrode and the inclined portions are the largest.

Abstract: Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.

Abstract: An organic light emitting display device. The organic light emitting display device includes a substrate having a pixel region in which pixels are formed and a non-pixel region in which a light sensor is formed, an insulating film formed on the substrate, a first electrode formed on the insulating film and formed of a reflective material reflecting light, the first electrode being formed on the entire surface of the insulating film except for a region between the pixels and a region over the light sensor, a pixel defining film exposing a region of the first electrode and formed on the insulating film, an organic light emitting layer formed on the exposed region of the first electrode, and a second electrode formed on the organic light emitting layer. The first electrode is formed to have a greater area than that of the organic light emitting layer.