Abstract: In a light emitting device and a fabricating method thereof are provide, wherein the light emitting device includes a light converting element, and a light emitting element positioned on the light converting element and including a first electrode, a light emitting structure and a second electrode, the first electrode formed on the light emitting element and having a first opening, the light emitting structure having a first conductive pattern of a first conductivity type, a light emitting pattern, and a second conductive pattern of a second conductivity type, which are sequentially stacked, and the second electrode formed on the second conductive pattern, wherein the light generated from the light emitting structure reaches the light converting element through the first opening.

Abstract: Disclosed is a method of manufacturing a storage capacitor having increased aperture ratio: providing a substrate having a metal layer disposed thereon, and said metal layer is covered correspondingly with a first dielectric layer and a second dielectric layer in sequence; forming a photoresist layer with a uniform thickness to cover said second dielectric layer; performing a process of exposure-to-light and development to a portion of said photoresist layer that is correspondingly disposed over said metal layer sequentially, so that its thickness is less than its original thickness; removing said photoresist layer and etching said portion of said second dielectric layer, so that a thickness of said portion of said second dielectric layer is less than its original thickness, and the etching depth of said portion is greater than that of the other remaining portions of said second dielectric layer; and forming an electrode layer on said second dielectric layer.

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: An LED apparatus includes a base having thermal conductivity, an insulative substrate provided on one surface of the base and including electrodes provided on a surface of the substrate, at least one base-mounting area that is an exposed part of the base, exposed within a pass-through hole provided in the substrate, a plurality of LED elements mounted on the base in the base-mounting area and some of the LED elements in a unit electrically connected to the electrodes in series, a plurality of the units are electrically connected in parallel, and a frame disposed to surround the base-mounting area and configured to form a light-emitting area.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon, and a switching element formed using the wide-bandgap semiconductor layer. The switching element is electrically connected to the photodiode so as to be on/off-controlled by a control signal from the photodiode.

Abstract: A light emitting diode module is produced using at least one light emitting diode (LED) and at least two selectable components that form or are part of a light mixing chamber that surrounds the LEDs and includes an output port. A first selectable component has a first type of wavelength converting material with a first wavelength converting characteristic and a second selectable component has a second type of wavelength converting material with a different wavelength converting characteristic. The first and second wavelength converting characteristics alter the spectral power distribution of the light produced by the LED to produce light through the output port that has a color point that is a predetermined tolerance from a predetermined color point. Moreover, a set of LED modules may be produced such that each LED module has the same color point within a predetermined tolerance.

Abstract: LED lighting systems operate their LED above a junction temperature of 85° C. and space apart from the LED, components of the LED lighting system that reduce an expected lifetime of the LED lighting system to less than 25,000 hours as a result of operating the LED above the junction temperature of 85° C. Accordingly, the LED itself may be driven hotter than is conventionally the case, without impacting its lifetime. By allowing the LED to operate hotter, reduced heat sinking may be needed for the LED itself, which can decrease the cost, size and/or complexity of the thermal management system for the LED lighting system and/or can allow a thermal budget for the LED lighting system to be used elsewhere. Related structures are also described.

Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Abstract: A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

Abstract: A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.

Abstract: To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Abstract: A light source such as a semiconductor light emitting diode is positioned in a first opening in a transparent member, which may function as a waveguide in a display. The transparent member surrounds the light source. No light source is positioned in a second opening in the transparent member. In some embodiments, the first opening is shaped to direct light into the transparent member. In some embodiments, a reflector is positioned over the light source. The reflector includes a flat portion and a shaped portion. The shaped portion extends from the flat portion toward the light source.

Abstract: A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided.

Abstract: A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material.

Abstract: A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g.

Abstract: A tamper-resistant semiconductor device (5;20;30;40;50;60) which includes a plurality of electronic circuits formed on a circuitry side (6) of a substrate (7) having an opposite side which is a backside (8) of the semiconductor device, and comprises at least one light-emitting device (9a-f;21) and at least one light-sensing device (10a-f;22a-b) provided on the circuitry side (6) of the semiconductor device. The light-emitting device (9a-f;21) is arranged to emit light, including a wavelength range for which the substrate (7) is transparent, into the substrate towards the backside (8), and the light-sensing device (10a-f;22a-b) is arranged to sense at least a fraction of the emitted light following passage through the substrate (7) and reflection at the backside (8), and configured to output a signal indicative of a reflecting state of the backside, thereby enabling detection of an attempt to tamper with the backside (8) of the semiconductor device (5;20;30;40;50;60).

Abstract: A light emitting diode (LED) with a stable color temperature includes at least one LED chip and at least one color sensor module. The LED chip has a main light emitting surface and a sub light emitting surface opposite to the main surface. The color sensor module senses the intensities of light emitting from sub light emitting surface of the LED chip for adjustment of a color temperature of the LED.

Abstract: In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.

Abstract: A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1?xN layer on the first electrode layer, forming on the first InxGa1?xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.

Abstract: A light emitting and receiving device having a first region and a second region adjacent to the first region in a plan view, includes: a light absorbing layer formed in the first and second regions; a first cladding layer formed above the light absorbing layer; an active layer formed above the first cladding layer in the first region; and a second cladding layer formed above the active layer, wherein at least part of the active layer forms a gain region, a stepped side surface having an end surface of the gain region is formed at the boundary between the first region and the second region, light produced in the gain region exits through the end surface of the gain region, and part of the light having exited reaches the light absorbing layer in the second region and is received by the light absorbing layer.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: An ink cartridge-attaching device includes a cartridge attachment section to which cartridges each storing an ink are attachable. Optical sensors are provided on the cartridge attachment section, which detect the cartridges attached to the cartridge attachment section, and each of which has light-emitting portion and light-receiving portion. The device further includes a controller which controls the optical sensors to obtain, based on signals from the optical sensors, information about the cartridges. The optical sensors are disposed such that the light-emitting portion and the light-receiving portion of the optical sensors are arranged alternately in a row.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: An infrared data communication module (A1) includes a substrate (1) consisting of a first layer (1A) and a second layer (1B), where the first layer is formed with a recess (11) open at its obverse surface, and includes the opening of the recess (11) and the second layer is fixed to the first layer (1A) on the side opposite from the opening. The module also includes a bonding conductor layer (6A) covering at least the bottom surface of the recess (11), a light emitting element (2) mounted on the bonding conductor layer (6A), and a heat dissipating conductor layer (6C) sandwiched between the first layer (1A) and the second layer (1B) and connected to the bonding conductor layer (6A).

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Abstract: The present invention relates to an optoelectronic sensor for 5 demodulating a modulated photon flux (50), and to a measuring device, in particular for 3D distance measurement, having at least one optoelectronic sensor of this type. The optoelectronic sensor has at least two collecting zones 10 introduced in a semiconductor region (10), which collecting zones are for example diffused into the semiconductor region and doped inversely with respect to the semiconductor region (10). The collecting zones serve for collecting and tapping off minority carriers generated upon penetration of a modulated photon flux (50). Furthermore, at least two control zones are introduced in the semiconductor region (10), which control zones generate a drift field in a manner dependent on a control voltage that can be applied to the control zones, the control zones being of the same doping type as the semiconductor region (10).

Abstract: An electronically active sheet includes a bottom substrate having a bottom electrically conductive surface. A top substrate having a top electrically conductive surface is disposed facing the bottom electrically conductive surface. An electrical insulator separates the bottom electrically conductive surface from the top electrically conductive surface. At least one bare die electronic element is provided having a top conductive side and a bottom conductive side. Each bare die electronic element is disposed so that the top conductive side is in electrical communication with the top electrically conductive surface and so that the bottom conductive side is in electrical communication with the bottom electrically conductive surface.

Abstract: There is provided a semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A manufacturing method of a semiconductor device comprising the step of making the introduction of nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.

Abstract: Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (2) and photodiode (6). First, on a substrate of glass (12), a silicon film (8) and an interlayer insulation film (15) for covering the silicon film (8) are formed in this order. Then, a metal film is formed, and metal lines (10, 11) traversing the silicon film (8) are formed by etching the metal film. Then, p-type impurity ions are implanted by using a mask that has an opening (24a) that exposes a portion that overlaps a region where a p-layer (9a) is to be formed, a part of the opening (24a) being formed with the metal line (10). Furthermore, n-type impurity ions are implanted by using a mask that has an opening (25b) that exposes a portion that overlaps a region where an n-layer (9c) is to be formed, a part of the opening (25a) being formed with the metal line (11).

Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.

Abstract: An object is to provide a photosensor utilizing an oxide semiconductor in which a refreshing operation is unnecessary, a semiconductor device provided with the photosensor, and a light measurement method utilizing the photosensor. It is found that a constant gate current can be obtained by applying a gate voltage in a pulsed manner to a transistor including a channel formed using an oxide semiconductor, and this is applied to a photosensor. Since a refreshing operation of the photosensor is unnecessary, it is possible to measure the illuminance of light with small power consumption through a high-speed and easy measurement procedure. A transistor utilizing an oxide semiconductor having a relatively high mobility, a small S value, and a small off-state current can form a photosensor; therefore, a multifunction semiconductor device can be obtained through a small number of steps.

Abstract: A photoelectric structure is presented, comprising one or more PiN cells. The PiN cell is formed by an intrinsic semiconductor bulk having front and rear surfaces enclosed between p- and n-type regions extending along side surfaces of said semiconductor bulk. The front and rear surfaces of the intrinsic semiconductor bulk are active surfaces of the PiN cell and said side surfaces of said semiconductor bulk formed with said p- and n-type regions are configured and operable for collecting excess charged carriers generated in said semiconductor bulk in response to collected electromagnetic radiation to which at least one of the active surfaces is exposed during the PiN cell operation.

Abstract: A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the electric charges; and a plurality of filters above a backside surface of the semiconductor substrate corresponding to the respective charge accumulating areas. The plurality of filters includes different color filters which transmit different color components of the light from one another and luminance filters each having a spectral characteristic correlated with a luminance component of the light, the plurality of charge accumulating areas includes first charge accumulating areas corresponding to the respective color filters, and second charge accumulating areas corresponding to the respective luminance filters, and the second charge accumulating areas includes a third charge accumulating area having a size larger than those of the first accumulating areas.

Abstract: An organic electroluminescence illumination device including: an organic electroluminescence panel including: a transparent substrate; a transparent electrode formed on the transparent substrate; an organic light emitting layer formed on the transparent electrode; and a metal electrode formed on the organic light emitting layer, wherein the organic light emitting layer comprises: an illumination area that is formed as a main light emitting area of the organic electroluminescence illumination device; a reference area, which is electrically-insulated from the illumination area; and a light receiving area, which is electrically-insulated from the illumination area and the reference area; and an organic light emitting layer driving part that drives individually the illumination area and the reference area, wherein the organic light emitting layer driving part detects current flowing in the light receiving area.

Abstract: Semiconductor light-emitting structures are shown on engineered substrates having a graded composition. The composition of the substrate may be graded to achieve a lattice constant on which a yellow-green light-emitting semiconductor material may be disposed. In some embodiments, the structure may be substantially free of aluminum.

Abstract: A thin film transistor comprises: a first transistor region and a second transistor region defined on a substrate; and a first transistor and a second transistor respectively disposed on the first and second transistor regions, the first transistor comprising: a first semiconductor layer having source, channel, and drain regions defined on the substrate; a first insulating film disposed on the first semiconductor layer; a first transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the first semiconductor layer; and a second insulating film disposed on the first transparent electrode, and the second transistor comprising: a second semiconductor layer having source, channel, and drain regions defined on the substrate; the first insulating film disposed on the second semiconductor layer; a second transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the second semiconductor layer; a second gate dispose

Abstract: An organic light emitting device is provided. The device includes an anode, a cathode, and an organic emissive stack disposed between the anode and the cathode. The device may be a “pixel” in a display, capable of emitting a wide variety of colors through the use of independently addressable “sub-pixels,” each subpixel emitting a different spectrum of light. In the most general sense, the device includes a first subpixel and a second subpixel, and at least one of the anode and the cathode has independently addressable first and second regions corresponding to the first and second subpixels. The device includes an emissive stack disposed between the anode and the cathode. The emissive stack includes a first organic emissive layer and a second organic emissive layer. The first organic emissive layer is disposed between the anode and the cathode, and extends throughout the first and second regions.

Abstract: A package has a base substrate that is a metal plate electrically connected to one electrode of a UV-ray light emitting diode and a cover substrate that is a metal plate electrically connected to the other electrode and that is stacked on the base substrate. A plurality of packages are mounted on a header such that center lines of the base substrates extending in their widthwise directions are aligned to each other. The cover substrates are arranged asymmetrical with respect to the longitudinal center line of the base substrates so as to traverse the center line. When mounted on the header, the packages are arranged such that positions of the cover substrates are staggered with respect to the center line. Moreover, the base substrate of one of the adjacent packages and the cover substrate of the other adjacent package are connected together by a connection plate fastened to the base substrates and the cover substrate by connection screws.

Abstract: An optical device includes: a surface-emitting type semiconductor laser section; at least one isolation section formed above the surface-emitting type semiconductor laser section; and a photodetector section formed above the isolation section, wherein the surface-emitting type semiconductor laser section includes a first mirror, an active layer formed above the first mirror and a second mirror formed above the active layer, the photodetector section includes a first contact layer, a photoabsorption layer formed above the first contact layer and a second contact layer formed above the photoabsorption layer, and the isolation section includes a first isolation layer of a conductivity type different from a conductivity type of the second mirror, and a second isolation layer formed above the first isolation layer and having a conductivity type different from the conductivity type of the first contact layer and the first isolation layer.

Abstract: A detector system with a microelectronic semiconductor chip and a separate optoelectronic detector chip is specified, wherein the detector chip is positioned on the semiconductor chip. A detector subassembly with such a detector system is also specified.

Abstract: Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.

Abstract: There is disclosed a lighting device of which the light sources and/or optical elements are hidden in a first cover state associated with a first light state. This enables an unobtrusive lighting system in the first cover state. In a second cover state associated with a second light state, optical elements, e.g. shutters or beam shaping elements, are switched, induced by the heat or the light flux generated by the light sources, such that the lighting system can function properly.

Abstract: It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer 102 containing a light-emitting material, a second layer 103 containing an N-type semiconductor, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium are provided between an anode 101 and a cathode 106, wherein the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the cathode 106 are provided in order, and wherein the cathode has a layer containing reflective metal.

Abstract: A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.

Abstract: The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely.

Abstract: A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.