Using Static Field Induced Region, E.g., Sit, Pbt (epo) Patents (Class 257/E21.406)
  • Patent number: 12009417
    Abstract: A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 ?/sq.
    Type: Grant
    Filed: May 20, 2021
    Date of Patent: June 11, 2024
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Kyle Bothe, Joshua Bisges
  • Patent number: 7535039
    Abstract: A dual gate power switch comprised of a vertical arrangement of a normally off SIT (static induction transistor) in series with a normally on SIT in a monolithic semiconductor structure. The structure includes a first pillar having at the base thereof laterally extending shoulder portions having sections of a first gate for controlling the normally off SIT. The structure includes a second pillar, of a width greater than the first pillar and which also has laterally extending shoulder portions having sections of a second gate for controlling the normally on SIT. Contacts are provided for SIT operation.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: May 19, 2009
    Assignee: Northrop Grumman Corp
    Inventors: Eric J. Stewart, Stephen Van Campen, Rowland C. Clarke