Abstract: Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.

Abstract: A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

Abstract: A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

Abstract: There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Abstract: A method for doping a multi-gate device is disclosed. In one aspect, the method comprises patterning a fin in a substrate, depositing a gate stack, and doping the fin. The process of doping the fin is done by depositing a blocking mask material at least on the top surface of the fin after the patterning of the gate stack. After the deposition of the blocking mask material dopant ions are implanted whereby the blocking mask material partially or completely blocks the top surface of the fin from these dopant ions.