Abstract: A semiconductor device of improved stress-migration resistance and reliability includes an insulating film having formed therein a lower interconnection consisting of a barrier metal film and a copper-silver alloy film, on which is then formed an interlayer insulating film. In the interlayer insulating film is formed an upper interconnection consisting of a barrier metal film and a copper-silver alloy film. The lower and the upper interconnections are made of a copper-silver alloy which contains silver in an amount more than a solid solution limit of silver to copper.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described.

Abstract: In a capacitor 10, a first electrode 21, a dielectric layer 23, a solid electrolytic layer 50 and a second electrode 31 are provided. In a manufacturing process, the dielectric layer 23 and a first solid electrolytic layer 24 formed by a chemical polymerization film are provided on the first electrode 21 side, while a second solid electrolytic layer 32 formed by an electrolytic polymerization film is provided on the second electrode 31 side. Then, the solid electrolytic layers are bonded to each other.

Abstract: The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor device, an electro-optical unit, and an electronic apparatus. An apparatus to form a thin-film includes a coating unit to apply a liquid material containing a thin-film component onto a substrate and also includes heat-treating units to heat the substrate applied with the liquid material. The coating unit and the heat-treating units each include a control device to control the atmosphere in a treating chamber to treat the substrate.