Abstract: A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages. Corresponding structures result from these methods.

Abstract: A stacked semiconductor device includes a plurality of stacked semiconductor dies electrically connected with each other, a first power line electrically connected to a lowermost semiconductor die among the stacked semiconductor dies, a second power line formed over an uppermost semiconductor die among the stacked semiconductor dies, and an external connection line electrically connecting the first power line and the second power line.

Abstract: A method of forming a package device includes providing a carrier substrate, forming a trench in a front side of the carrier substrate, and bonding a semiconductor die in the trench. The method also includes thinning a back side of the carrier substrate based on a target thickness to obtain a thinned carrier substrate. The method further includes providing a first die group and bonding the thinned carrier substrate to the first die group to form a height-adjusted first die group.

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Abstract: A wafer structure includes a semiconductor substrate that includes a chip region and a scribe lane region. A first dielectric layer is on a first surface of the semiconductor substrate, a second dielectric layer is on the first dielectric layer. A dielectric pattern is between the first dielectric layer and the second dielectric layer. A through via that penetrates the first surface and a second surface at the chip region of the semiconductor substrate, and a conductive pad is in the second dielectric layer and on the through via. The dielectric pattern includes an etch stop pattern on the chip region of the semiconductor substrate and in contact with a bottom surface of the conductive pad, and an alignment key pattern on the scribe lane region of the semiconductor substrate.

Abstract: A semiconductor apparatus includes a substrate and a through silicon via (TSV) structure; a groove is disposed on the substrate; the TSV structure is disposed on the substrate; and a first end of the TSV structure is exposed in the groove, and a distance between an end surface of the first end and a bottom wall of the groove is smaller than the depth of the groove. The first end of the TSV structure is exposed so as to facilitate heat dissipation; the distance between the end surface of the first end and the bottom wall of the groove is smaller than the depth of the groove, i.e., the first end of the TSV structure is sunken in the groove, and other structures will not be affected.

Abstract: An electronic assembly, comprising a carrier wafer of a first material, having a top wafer surface and a bottom wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; and an insulator of a second material, different from the first material, having insulator top and bottom surfaces, joined by insulator side surfaces, and having a conducting via that passes through said insulator between said insulator top surface and said insulator bottom surface; wherein the insulator is held in said through-wafer cavity by direct contact of the insulator side surfaces with an attachment metal that fills said through-wafer cavity.

Abstract: A semiconductor package and a method of forming the same are provided. The semiconductor package includes: a semiconductor substrate having a front side and a back side, the semiconductor substrate having a chip area and a dummy area; a front structure below the front side, and including an internal circuit, an internal connection pattern, a guard pattern, and a front insulating structure; a rear protective layer overlapping the chip area and the dummy area, and a rear protrusion pattern on the rear protective layer and overlapping the dummy area, the rear protective layer and the rear protrusion pattern being on the back side; a through-electrode structure penetrating through the chip area and the rear protective layer, and electrically connected to the internal connection pattern; and a rear pad electrically connected to the through-electrode structure. The internal circuit and the internal connection pattern are below the chip area, and the guard pattern is below the chip area adjacent to the dummy area.

Abstract: Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Abstract: Provided is a method for manufacturing a component arrangement for a package, including providing a wafer made of a semiconductor material having a polished wafer surface; forming an opening in the wafer by anisotropic etching, wherein an anisotropically etched surface is manufactured near the opening; separating a component from the anisotropically etched wafer, wherein the separated component is manufactured having the following surfaces: an optical surface formed near a surface portion of the polished wafer surface and a mounting surface formed in the region of the anisotropically etched surface; and mounting the separated component on a substrate surface of a carrier substrate using the mounting surface in such a manner that the anisotropically etched surface is bonded to the substrate surface, wherein the optical surface is arranged as an inclined exposed surface. Furthermore, a component arrangement and a package are provided having a component arrangement.

Abstract: A package structure is provided. The package structure includes a semiconductor die bonding on a first surface of a redistribution structure through first bonding elements, and a wall structure bonding on the first surface of the redistribution structure through second bonding elements. The wall structure includes a plurality of partitions laterally arranged in a discontinuous ring, and the semiconductor die is located within the discontinuous ring. The package structure also includes a substrate on a second surface of the redistribution structure through third bonding elements and in electrical connection with the semiconductor die.

Abstract: Various embodiments of the present disclosure are directed towards an apparatus comprising a semiconductor substrate. A conductive pillar is disposed in the semiconductor substrate. An isolation region is disposed in the semiconductor substrate and extends laterally around the conductive pillar. The isolation region is configured to electrically isolate the conductive pillar from a surrounding portion of the semiconductor substrate. An opening is disposed in the isolation region. A dielectric anchor is disposed in the isolation region. The dielectric anchor extends vertically through the semiconductor substrate along a side of the opening. The dielectric anchor anchors the conductive pillar to the semiconductor substrate.

Abstract: Backside interconnect structures having reduced critical dimensions for semiconductor devices and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure over a front-side of a substrate; a first backside interconnect structure over a backside of the substrate, the first backside interconnect structure including first conductive features having tapered sidewalls with widths that narrow in a direction away from the substrate; a power rail extending through the substrate, the power rail being electrically coupled to the first conductive features; and a first source/drain contact extending from the power rail to a first source/drain region of the first transistor structure.

Abstract: Embodiments of this application provide a semiconductor structure and a method for forming the same. The method for forming the semiconductor structure includes: a first substrate is provided; the back surface of the first substrate is etched to form a trench; a conductive layer is formed in the trench; a first conductive column that extends into the trench is formed at a back surface of the first substrate; a device layer is formed at a front surface of the first substrate, and the device layer includes a storage array and a contact structure; and a second conductive column that penetrates through the device layer and extends into the first substrate is formed; the first conductive column is electrically connected with the second conductive column through the conductive layer.

Abstract: Provided is a display substrate, which includes: a base substrate disposed with a first display region and a second display region, multiple second-region light emitting elements located in the second display region, and multiple second-type pixel circuits located in the first display region. The first display region is located at at least one side of the second display region. The multiple second-type pixel circuits include multiple pixel circuits of a first structure and multiple pixel circuits of a second structure. At least one pixel circuit of the multiple pixel circuits of the first structure is connected with at least one second-region light emitting element of the multiple second-region light emitting elements through a first group of conductive lines.

Abstract: A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.

Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

Abstract: A die, a memory and a method of manufacturing the die are provided. The die includes a substrate and a conductive structure, where the substrate has an interconnection structure layer, the conductive structure includes a first conductive structure and a second conductive structure connected with the first conductive structure, the first conductive structure is connected with the interconnection structure layer, and a coefficient of thermal expansion of the first conductive structure is smaller than that of copper.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: The memory device includes a substrate, a first ball grid array, a first integrated circuit chip, and a first electrostatic discharge protection element. The first ball grid array is disposed on the substrate. The first integrated circuit chip is disposed on the first ball grid array. The first electrostatic discharge protection element is coupled between the second input/output pad of the first integrated circuit chip and the first internal circuit. The first electrostatic discharge protection element is configured to form a first electrostatic discharge path from the second input/output pad to a first voltage supply line. The first electrostatic discharge protection element includes multiple electrostatic discharge units, and at least one of the electrostatic discharge units is free of coupling between the second input/output pad, the first voltage supply line, and the first internal circuit.

Abstract: A semiconductor device having monolithic conductive columns, and associated systems and methods, are disclosed herein. The semiconductor device can include a semiconductor substrate, a conductive pad, an opening, a non-conductive liner, and a plug of non-conductive material. The conductive pad may be at a surface of the semiconductor substrate. The opening may extend through the semiconductor substrate from the conductive pad to a second surface and define a side wall. The liner may coat the side wall and the plug may fill the opening. A second opening may be formed through the semiconductor device and the opening and a conductive material plated therein.

Abstract: According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.

Abstract: A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

Abstract: In one example, an electronic device includes a substrate with a substrate front side, a substrate rear side opposite to the substrate front side, a substrate body, and conductive vias extending through the substrate body from the substrate front side to the substrate rear side. A first construct is over the substrate front side and includes a first dielectric structure and first conductors embedded in the first dielectric structure and coupled to the conductive vias. A second construct is over the substrate rear side and includes a second dielectric structure and second conductors embedded in the second dielectric structure and coupled to the conductive vias. One or more of the first conductors or the second conductors define one or more passive devices. Other examples and related methods are also disclosed herein.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first conductive component, a second conductive component, a planarization layer and an antenna layer. The second conductive component is disposed adjacent to the first conductive component. The second conductive component and the first conductive component have different thicknesses. The planarization layer is disposed on the first conductive component. The antenna layer is disposed on the first conductive component and the second conductive component.

Abstract: In some embodiments, the present disclosure relates to a method that includes depositing multiple hard mask layers over an interconnect dielectric layer. A first patterning layer is deposited over the multiple hard mask layers, and a first masking structure is formed over the first masking structure. The first masking structure has openings formed by a first extreme ultraviolet (EUV) lithography process. Portions of the first patterning layer are removed according to the first masking structure. A second masking structure is formed within the patterned first patterning layer. A third masking structure is formed over a topmost one of the hard mask layers and has openings formed by a second EUV lithography process. Removal processes are performed to pattern the multiple hard mask layers to form openings in the interconnect dielectric layer, and interconnect wires having rounded corners are formed within the openings of the interconnect dielectric layer.

Abstract: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.

Abstract: A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.

Abstract: A semiconductor structure and a forming method thereof are provided. The method of forming the semiconductor structure includes: providing a wafer having a front surface and a back surface opposite to the front surface; patterning the back surface of the wafer to form a groove extending from the back surface towards the front surface; forming a dielectric layer at a bottom and a side wall of the groove; and forming, on the dielectric layer, a conductive layer filling the groove.

Abstract: A manufacturing method of a semiconductor device includes inspecting each of plural chip regions of a substrate and determining the inspected chip region as a non-defective chip region or a defective chip region, the substrate including the plural chip regions formed as one system, and the plural chip regions being arranged in a planar direction on the substrate. The method includes forming a wiring, the wiring being connected to an electrode of the non-defective chip region among the plural chip regions, and the wiring being not connected to an electrode of the defective chip region among the plural chip regions.

Abstract: A method includes forming a transistor over a substrate; forming a front-side interconnection structure over the transistor; after forming the front-side interconnection structure, removing the substrate; after removing the substrate, forming a backside via to be electrically connected to the transistor; depositing a dielectric layer to cover the backside via; forming an opening in the dielectric layer to expose the backside via; forming a spacer structure on a sidewall of the opening; after forming a spacer structure, forming a conductive feature in the opening to be electrically connected to the backside via; and after forming the conductive feature, forming an air gap in the spacer structure.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: An electronic printed circuit board structure for mitigating conductive anodic filament growth. The structure includes at least two conductive layers and a dielectric layer sandwiched between the conductive layers. At least one hole extends through the dielectric layer, and a layer of nonconductive material covers the at least one hole, wherein the nonconductive material is glass-free. A conductive plate layer is disposed over the nonconductive material layer to form a via connection in the structure.

Abstract: A preparation method of an LCoS panel provides a wafer substrate at a wafer level, the substrate including die areas with active circuits. A seal is formed on the wafer substrate, coupling to a transparent substrate. Vias extend through a thick silicon substrate and there are conductive interfaces on the second surface in each die area, the active circuit being connected to the back side of the wafer substrate by the vias and the conductive interfaces. The wafer substrate and the transparent substrate are cut to obtain LCoS panels. These processes (especially the circuit packaging) are all performed at wafer level, improving production efficiency and reducing production cost. An LCoS panel so prepared is also disclosed.

Abstract: Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

Abstract: An LCoS panel and a method of preparation includes wafer level packaging, manufacturing vias through a silicon substrate in each die area of a wafer substrate, and manufacturing conductive interfaces on a back surface of the wafer substrate. Each conductive interface corresponds to one via and so connected to an active circuit of the die area where the conductive interface is located. Liquid crystal packaging is applied, a seal coated to surround the pixel circuit area of the active circuit on a front surface of the wafer substrate, injecting liquid crystal into a space defined by the seal, the seal coupling glass substrate comprising a transparent conductive layer and the wafer substrate, and then cutting. Wafer level chip scale packaging of the LCoS panels is thus achieved, the cost is reduced, the obtained LCoS panels are small in total area and of greater thinness.

Abstract: A stacked device is provided. The stacked device includes a reduced height active device layer, and a plurality of lower source/drain regions in the reduced height active device layer. The stacked device further includes a lower interlayer dielectric (ILD) layer on the plurality of lower source/drain regions, and a conductive trench spacer in the lower interlayer dielectric (ILD) layer, wherein the conductive trench spacer is adjacent to one of the plurality of lower source/drain regions. The stacked device further includes a top active device layer adjacent to the lower interlayer dielectric (ILD) layer, and an upper source/drain section in the top active device layer. The stacked device further includes a shared contact in electrical connection with the upper source/drain section, the conductive trench spacer, and the one of the plurality of lower source/drain regions.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: A stator includes a magnetic plate material that has a main plate surface that is a surface to face a main plate of a movement when assembled to the main plate and that has a rotor accommodating hole formed in a part thereof; and a non-magnetic region that is made non-magnetic by applying chromium on the main plate surface around the rotor accommodating hole and irradiating the chromium with a laser from the main plate surface side.

Abstract: An integrated circuit includes a first transistor, a horizontal routing track extending in a first direction in a first metal layer, and a via connector conductively connecting the horizontal routing track to a first terminal of the first transistor. The integrated circuit also includes a backside routing track extending in the first direction in a backside metal layer, and a backside via connector conductively connecting the backside routing track to a second terminal of the first transistor. The backside metal layer and the first metal layer are formed at opposite sides of a semiconductor substrate. In the integrated circuit, either the first terminal or the second terminal is a gate terminal of the first transistor.

Abstract: A semiconductor device includes a substrate, a body structure and an electronic component. The body structure is disposed above the substrate and includes a semiconductor die, a molding compound, a conductive component and a lower redistribution layer (RDL). The semiconductor die has an active surface. The molding compound encapsulates the semiconductor die and has a lower surface, an upper surface opposite to the lower surface and a through hole extending to the upper surface from the lower surface. The conductive component is formed within the through hole. The lower RDL is formed on the lower surface of the molding compound, the active surface of the semiconductor die and the conductive component exposed from the lower surface. The electronic component is disposed above the upper surface of the molding compound and electrically connected to the lower RDL through the conductive component.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface adjacent to an active layer; a first insulating layer disposed on the first surface of the semiconductor substrate; a second insulating layer disposed on the first insulating layer; an etch stop structure interposed between the first insulating layer and the second insulating layer and including a plurality of etch stop layers; a contact wiring pattern disposed inside the second insulating layer and surrounded by at least one etch stop layer of the plurality of etch stop layers; and a through electrode structure configured to pass through the semiconductor substrate, the first insulating layer, and at least one etch stop layer of the plurality of etch stop layers in a vertical direction and contact the contact wiring pattern.

Abstract: An ultrasound sensor includes a frame, wherein the frame includes an outer perimeter, an inner perimeter, and a midsection, wherein the midsection extends across the inner perimeter. The sensor further includes two or more transducer elements, wherein the two or more transducer elements are located within the inner perimeter, and include one or more membranes that include a bottom portion that includes a first piezoelectric layer and second piezoelectric layer, wherein the two or more transducer elements are each separated from the midsection, wherein the two or more transducer elements are configured to each activate a transmit mode and receive mode, wherein the transmit mode is configured to transmit a signal and the receive mode is configured to receive a signal, wherein a first transducer element activates the transmit mode when a second transducer element does not activate the transmit mode.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

Abstract: Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Abstract: The present disclosure provides a semiconductor memory device. The semiconductor memory device comprises a substrate, which includes a storage area and a peripheral area, wherein the storage area has a contact plug, a bit line structure adjacent to the contact plug, an air gap between the bit line structure and the contact plug, a barrier layer conformally overlaying the bit line structure, and a landing pad above the barrier layer, wherein the substrate includes a trench between the storage area and the peripheral area, the trench is filled with a nitride material, and the substrate further comprises a first oxide layer above the nitride material in the trench and on the landing pad, a nitride layer above the first oxide layer, and a second layer above the nitride layer.

Abstract: A package for an electric device is proposed based on a substrate (SU, SU1, SU2) that comprises at least a piezoelectric layer. Device structures are enclosed in a cavity of an integrally formed package layer structure (PK) of a thin film package applied on the first surface (SI). A first contact pad (PI) is arranged on the first surface of the substrate and electrically connected to the device structures. A second contact pad (P2) is arranged on a second surface (S2) of the substrate opposite to the first surface (SI). A via (V) is guided through the substrate and interconnects first and second contact pads electrically. Packages may be stacked on one another and connected via two pads of different kind. The first substrate (SU1) is connected via its second pad (P2) on the second surface thereof to the first pad of a second substrate (SU2) by means of connection means (CM).

Abstract: The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.

Abstract: A stacked die system includes at least three dies. A first die has a same design as a second die. The first die includes a first circuit, and the second die includes a corresponding second circuit. A signal is received at the first die and sent to the third die via the second die. The signal is routed through either the first circuit or the second circuit but not both. Accordingly, an operation is performed on the signal prior to the signal reaching the third die but the operation is not performed by both the first circuit and the second circuit.