Abstract: An electronic device may include a bottom interconnect layer and an integrated circuit (IC) carried by the bottom interconnect layer. The electronic device may further include an encapsulation material on the bottom interconnect layer and laterally surrounding the IC. The electronic device may further include electrically conductive pillars on the bottom interconnect layer extending through the encapsulation material. At least one electrically conductive pillar and adjacent portions of encapsulation material may have a reduced height with respect to adjacent portions of the IC and the encapsulation material and may define at least one contact recess. The at least one contact recess may be spaced inwardly from a periphery of the encapsulation material.

Abstract: The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.

Abstract: Embodiments disclosed herein may relate to supply voltage or ground connections for integrated circuit devices. As one example, two or more supply voltage bond fingers may be connected together via one or more electrically conductive interconnects.

Abstract: A device includes a device die and a plurality of metal posts at a surface of the device die and electrically coupled to the device die. The device further includes a plurality of through-assembly vias (TAVs), a dam member between the device die and the plurality of TAVs, and a polymer layer encompassing the device die, the plurality of metal posts, the plurality of TAVs, and the dam member.

Abstract: A method of manufacturing a flip chip package includes: providing a board including a conductive pad disposed inside a mounting region of the board on which the electronic device is to be mounted, and a connection pad disposed outside the mounting region; forming a resin layer on the board; forming a trench by removing a part of the resin layer or forming an uneven portion at a portion of a surface of the resin layer; forming, on the trench or uneven portion, a dam member preventing leakage of an underfill between the mounting region and the connection pad; and mounting the electronic device on the mounting region.

Abstract: A semiconductor package including a substrate, a chip stack portion disposed on the substrate and including a plurality of first semiconductor chips, at least one second semiconductor chip disposed on the chip stack portion, and a signal transmitting medium to electrically connect the at least one second semiconductor chip and the substrate to each other, such that the chip stack portion is a parallelepiped structure including a first chip that is a semiconductor chip of the plurality of first semiconductor chips and includes a through silicon via (TSV), a second chip that is another semiconductor chip of the plurality of first semiconductor chips and electrically connected to the first chip through the TSV, and an internal sealing member to fill a space between the first chip and the second chip.

Abstract: A method for forming a micro bump includes forming a first nano-particle layer on a substrate and forming a second nano-particle layer on the first nano-particle layer. The first and second nano-particle layers include a plurality of first nano particles and a plurality of second nano particles, respectively. The method further includes irradiating a laser beam onto the second nano-particle layer, where the laser beam penetrates through the second nano-particle layer and is at least partially absorbed by at least some of the first nano particles to generate heat. The first nano particles and the second nano particles have different absorption rates with respect to the laser beam.

Abstract: A wiring device for a semiconductor device, a composite wiring device for a semiconductor device and a resin-sealed semiconductor device are provided, each of which is capable of mounting thereon a semiconductor chip smaller than conventional chips and being manufactured at lower cost. The wiring device connects an electrode on a semiconductor chip with an external wiring device, and has an insulating layer, a metal substrate and a copper wiring layer. The wiring device has a semiconductor chip support portion provided on the side of the copper wiring layer with respect to the insulating layer. The copper wiring layer includes a first terminal, a second terminal and a wiring portion. The first terminal is connected with the electrode. The second terminal is connected with the external wiring device. The wiring portion connects the first terminal with the second terminal.

Abstract: Wire bonds are formed at an integrated circuit device so that multiple wires are bonded to a single bond pad. In a particular embodiment, the multiple wires are bonded by first applying a stud bump to the pad and successively bonding each of the wires to the stud bump. Another stud bump can be placed over the bonded wires to provide additional connection security.

Abstract: A packaging substrate with conductive structure is provided, including a substrate body having at least one conductive pad on a surface thereof, a stress buffer metal layer disposed on the conductive pad and a thickness of the stress buffer metal layer being 1-20 ?m, a solder resist layer disposed on the substrate body and having at least one opening therein for correspondingly exposing a portion of top surface of the stress buffer metal layer, a metal post disposed on a central portion of the surface of the stress buffer metal layer, and a solder bump covering the surfaces of the metal post.

Abstract: In one embodiment, a wafer level package includes a rerouting pattern formed on a semiconductor substrate and a first encapsulant pattern overlying the rerouting pattern. The first encapsulant pattern has a via hole to expose a portion of the rerouting pattern. The package additionally includes an external connection terminal formed on the exposed portion of the rerouting pattern. An upper section of the sidewall and a sidewall of the external connection terminal may be separated by a gap distance. The gap distance may increase toward an upper surface of the encapsulant pattern.

Abstract: There is provided a lead pin for a package substrate including: a connection pin being inserted into a hole formed in an external substrate; a head part formed on one end of the connection pin; and a barrier part formed on one surface of the head part in order to block the path of a solder paste so that the solder paste is prevented from flowing so as to cover the upper portion of the head part when the head part is mounted on the package substrate.

Abstract: In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.

Abstract: A semiconductor apparatus in a preferred embodiment includes: a substrate; a first chip provided on the substrate; a solder bump formed on the first chip; a solder dam arranged in substantially a rectangular and annular manner outside around the solder bump on the first chip by alternately connecting four sides and four quarter or less arcs; an electrode pad placed outside of the solder dam in the first chip; a second chip provided on the first chip in electric connection to the first chip via the solder bump; and an under-fill material filling a clearance between the first chip and the second chip inside of the solder dam. Here, a difference between an inner diameter and an outer diameter of the arc is 60 ?m or more whereas the center radius of the arc is greater than 207.5 ?m.

Abstract: A film for use in manufacturing a semiconductor device having at least one semiconductor element of the present invention is characterized by comprising: a base sheet having one surface; and a bonding layer provided on the one surface of the base sheet, the bonding layer being adapted to be bonded to the semiconductor element in the semiconductor device, the bonding layer being formed of a resin composition comprising a crosslinkable resin and a compound having flux activity. Further, it is preferred that in the film of the present invention, the semiconductor element is of a flip-chip type and has a functional surface, and the bonding layer is adapted to be bonded to the functional surface of the semiconductor element.

Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip, and a connection member to electrically connect the first semiconductor chip and the second semiconductor chip. The connection member may include a connection pad disposed on the first semiconductor chip, a connection pillar disposed on the second semiconductor chip, and a bonding member to connect the connection pad and the connection pillar. An anti-contact layer may be formed on at least one surface of the connection pad.

Abstract: A multi-chip module (MCM) structure comprises more than one semiconductor chip lying in a horizontal plane, the MCM having individual chip contact patches on the chips and a flexible heat sink having lateral compliance and extending in a plane in the MCM and secured in a heat exchange relation to the chips through the contact patches. The MCM has a mismatch between the coefficient of thermal expansion of the heat sink and the MCM and also has chip tilt and chip height mismatches. The flexible heat sink with lateral compliance minimizes or eliminates shear stress and shear strain developed in the horizontal direction at the interface between the heat sink and the chip contact patches by allowing for horizontal expansion and contraction of the heat sink relative to the MCM without moving the individual chip contact patches in a horizontal direction.

Abstract: One aspect provides an integrated circuit (IC) multi-chip packaging assembly, comprising a first IC chip having packaging substrate contacts and bridging block contacts, a second IC chip having packaging substrate contacts and bridging block contacts, and a bridging block partially overlapping the first and second IC chips and having interconnected electrical contacts on opposing ends thereof that contact the bridging block contacts of the first IC chip and the second IC chip to thereby electrically connect the first IC chip to the second chip.

Abstract: A BGA package structure and a method for fabricating the same, wherein the BGA package structure comprises: a substrate having a first surface used to carry a chip and a second surface opposite to the first surface, wherein the substrate is divided into several regions according to different distances from a central point of the substrate; a plurality of contact bonding pads on the second surface electrically connected with the chip; and a plurality of bumps respectively attached to each of the contact bonding pads, wherein the contact bonding pads and bumps in a region which is closest to the central point are the smallest, while the contact bonding pads and bumps in a region which is farthest to the central point are the biggest. Therefore the situation that the bumps at the edge are liable to peel off may improved.

Abstract: A packaged microelectronic element includes a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface. A substrate has a major surface and a plurality of conductive elements exposed at the major surface and joined to the first solid metal posts. In particular examples, the conductive elements can be bond pads or can be second posts having top surfaces and edge surfaces extending at substantial angles away therefrom. Each first solid metal post includes a base region adjacent the microelectronic element and a tip region remote from the microelectronic element, the base region and tip region having respective concave circumferential surfaces. Each first solid metal post has a horizontal dimension which is a first function of vertical location in the base region and which is a second function of vertical location in the tip region.

Abstract: The assembly comprises at least one microelectronic chip having two parallel main surfaces and lateral surfaces, at least one of the lateral faces comprising a longitudinal groove housing a wire element having an axis parallel to the longitudinal axis of the groove. The groove is delineated by at least two side walls. The wire element is secured to the chip at the level of a clamping area between at least one bump arranged on one of the side walls, and the side wall of the groove opposite said bump. The clamping area has a smaller height than the diameter of the wire element and a free area is arranged laterally to the bump along the longitudinal axis of the groove. The free area has a height, corresponding to the distance separating the two side walls, that is greater than the diameter of the wire element.

Abstract: A semiconductor substrate is provided having a first metal layer formed over a first insulating layer. A second insulating layer is formed having a first damascene opening, the first opening having a second insulating layer portion formed therein. A resist layer is deposited to fill the first opening and the resist layer is thereafter patterned to form an etching mask for etching a second damascene opening. The second opening is etched into a portion of the second insulating layer, the second opening exposing a portion of the first metal layer. A second metal layer is formed to include filling the first and second damascene openings embedding the second insulating layer portion in the second metal layer. The second metal layer is planarized and a passivation layer is formed above the second insulating layer and the second metal layer, wherein the passivation layer partially covers the second metal layer.

Abstract: An integrated circuit package comprising an active semiconductor device layer and at least one heat-transfer semiconductor layer on the active semiconductor device layer. The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer.

Abstract: Presented herein are a package-on-package device having a molded underfill and a method for forming the same, the method comprising applying a package mount mounting a die to the first side of a carrier package. A molded underfill may be applied first side of the carrier package, and be in contact with a portion of the package mount a portion of a sidewall of the die. A top package having at least one land may be mounted to the first side of the carrier package above the die, and, optionally separated from the top of the die. The package mount may be coined prior to, during or after applying the molded underfill to optionally be level with the underfill surface. The underfill region contacting the package mount may be below or above the surface of the underfill region contacting the die sidewall.

Abstract: A semiconductor package includes a substrate having a first surface, a second surface that is opposite to the first surface, and an opening formed between the first surface of the substrate and the second surface of the substrate. One or more bonding wires electrically couple a first surface of a semiconductor die included in the semiconductor package to the first surface of the substrate through an opening of the substrate. A first electrically insulative structure is disposed to substantially fill an area between the first surface of the semiconductor die, the second surface of the substrate, and one or more interconnect bumps that electrically couple the semiconductor die to the substrate. The first electrically insulative structure substantially encapsulates the one or more bonding wires and substantially fills the opening of the substrate.

Abstract: Structures and methods of making a flip chip package that employ polyimide pads of varying heights at a radial distance from a center of an integrated circuit (IC) chip for a flip chip package. The polyimide pads may be formed under electrical connectors, which connect the IC chip to a chip carrier of the flip chip package, so that electrical connectors formed on polyimide pads of greater height are disposed at a greater radial distance from the center of the IC chip, while electrical connectors formed on polyimide pads of a lesser height are disposed more proximately to the center of the IC chip. Electrical connectors of a greater relative height to the IC chip's surface may compensate for a gap, produced by heat-induced warpage during the making of the flip chip package, that separates the electrical connectors on the IC chip from flip chip attaches on the chip carrier.

Abstract: A semiconductor device, includes: a wiring substrate, a stacked body mounted on the wiring substrate, an underfill layer filled into gaps between respective semiconductor chips of the stacked body; and a molding body made up of a molding resin covered and formed at outside of the stacked body and so on. The underfill layer is made up of a cured product of a resin material containing an amine-based curing agent, and the cured product has a Tg of 65° C. or more and 100° C. or less.

Abstract: A semiconductor device which can prevent a deterioration in the electrical properties by preventing sputters generated by laser welding from adhering to a circuit pattern or a semiconductor chip and a method for fabricating such a semiconductor device are provided. A connection conductor is bonded to a copper foil formed over a ceramic by a solder and resin is injected to a level lower than a top of the connection conductor. Laser welding is then performed. After that, resin is injected. This prevents sputters generated by the laser welding from adhering to a circuit pattern or a semiconductor chip. As a result, a deterioration in the electrical properties can be prevented.

Abstract: An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.

Abstract: Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

Abstract: Packaging devices, methods of manufacture thereof, and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging device includes a substrate including an integrated circuit die mounting region. An underfill material flow prevention feature is disposed around the integrated circuit die mounting region.

Abstract: According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.

Abstract: A method to vertically bond a chip to a substrate is provided. The method includes forming a metal bar having a linear aspect on the substrate, forming a solder paste layer over the metal bar to form a solder bar, forming a plurality of metal pads on the substrate, and forming a solder paste layer over the plurality of metal pads to form a plurality of solder pads on the substrate. Each of the plurality of solder pads is offset from a long edge the solder bar by an offset-spacing. The chip to be vertically bonded to the substrate has a vertical-chip thickness fractionally less than the offset-spacing. The chip to be vertically bonded fits between the plurality of solder pads and the solder bar. The solder bar enables alignment of the chip to be vertically bonded.

Abstract: A semiconductor die includes a first contact stack including a first UBM pad on a first die pad, a second contact stack including a second UBM pad on a second die pad, and a third contact stack including a third UBM pad on a third die pad. The second UBM pad perimeter is shorter than the first UBM pad perimeter, and the third UBM pad perimeter is longer than the second UBM pad perimeter. A first solder bump is on the first UBM pad, a second solder bump is on the second UBM pad, and a third solder bump is on the third UBM pad. The first solder bump, second solder bump and third solder bump all have different sizes.

Abstract: A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.

Abstract: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.

Abstract: An under-bump metallization (UBM) structure for a substrate, such as an organic substrate, a ceramic substrate, a silicon or glass interposer, a high density interconnect, a printed circuit board, or the like, is provided. A buffer layer is formed over a contact pad on the substrate such that at least a portion of the contact pad is exposed. A conductor pad is formed within the opening and extends over at least a portion of the buffer layer. The conductor pad may have a uniform thickness and/or a non-planar surface. The substrate may be attached to another substrate and/or a die.

Abstract: A die cap for use with flip chip packages, flip chip packages using a die cap, and a method for manufacturing flip chip packages with a die cap are provided in the invention. A die cap encases the die of flip chip packages about its top and sides for constraining the thermal deformation of the die during temperature change. The CTE (coefficient of thermal expansion) mismatch between the die and substrate of flip chip packages is the root cause for warpage and reliability issues. The current inventive concept is to reduce the CTE mismatch by using a die cap to constrain the thermal deformation of the die. When a die cap with high CTE and high modulus is used, the die with the die cap has a relatively high overall CTE, reducing the CTE mismatch. As a result, the warpage and reliability of flip chip packages are improved.

Abstract: Provided are an electronic assembly and method for forming the same, comprising a first element having a first surface and a second element having a second surface. Electrical connections are provided between the first and the second elements formed by heating solder bumps. At least one collapse limiter structure is coupled to at least one of the first and the second surfaces, wherein the at least one collapse limiter structure is between at least two of the electrical connections.

Abstract: A pressure sensor package is provided that reduces the occurrence of micro gaps between molding material and metal contacts that can store high-pressure air. The present invention provides this capability by reducing or eliminating interfaces between package molding material and metal contacts. In one embodiment, a control die is electrically coupled to a lead frame and then encapsulated in molding material, using a technique that forms a cavity over a portion of the control die. The cavity exposes contacts on the free surface of the control die that can be electrically coupled to a pressure sensor device using, for example, wire bonding techniques. In another embodiment, a region of a substrate can be encapsulated in molding material, using a technique that forms a cavity over a sub-portion of the substrate that includes contacts. A pressure sensor device can be electrically coupled to the exposed contacts.

Abstract: A multi-chip stack module provides increased circuit density for a given surface chip footprint. Support structures are alternated with standard surface mount type chips to form a stack wherein the support structures electrically interconnect the chips. One aspect is a structure and method for interconnecting a plurality of generally planar chips in a vertical stack such that signals, which are common to the chips, are connected in the stack and signals, which are accessed individually, are separated within the stack.

Abstract: A direct multiple substrate die assembly can include a first and a second substrate, wherein each substrate can include at least one interlocking edge feature. An electrical interconnection area can be formed adjacent to or within the interlocking edge feature on each substrate and can be configured to couple one or more electrical signals between the substrates. In one embodiment, the interlocking edge feature can include one or more keying features that can enable accurate alignment between the substrates. In yet another embodiment, the direct multiple substrate die assembly can be mounted out of plane with respect to a supporting substrate.

Abstract: A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein.

Abstract: A semiconductor package device that includes an integrated circuit device package having a storage circuitry is disclosed. In an implementation, the semiconductor package device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes one or more integrated circuits formed proximal to (e.g., adjacent to, in, or on) the first surface. The semiconductor package device also includes an integrated circuit device disposed over the second surface, the integrated circuit device including storage circuitry for storing sensitive data. In one or more implementations, the semiconductor package device includes a through-substrate via that furnishes an electrical connection to the integrated circuit package. The semiconductor package device also includes an encapsulation structure disposed over the second surface and at least substantially encapsulates the integrated circuit device package.

Abstract: A device includes a metal pad, a passivation layer overlapping edge portions of the metal pad, and a first polymer layer over the passivation layer. A Post-Passivation-Interconnect (PPI) has a level portion overlying the first polymer layer, and a plug portion that has a top connected to the level portion. The plug portion extends into the first polymer layer. A bottom surface of the plug portion is in contact with a dielectric material. A second polymer layer is overlying the first polymer layer.

Abstract: An interposer for a semiconductor package structure includes a base substrate, a plurality of passive devices formed on the base substrate, and an identification (ID) code. The base substrate includes a first surface and an opposite second surface. The ID code is formed on the first surface or the second surface of the base substrate.

Abstract: One illustrative device disclosed herein includes a device substrate having a plurality of first die formed adjacent a front side of the device substrate, a glass window wafer attached to a back side of the device substrate, wherein the glass window wafer has a plurality of openings formed therein and a coefficient of thermal expansion that is within plus or minus 200-500% of the coefficient of thermal expansion of the device wafer, and a plurality of second die, each of which is positioned in one of the openings in the glass window wafer and electrically coupled to one of the first die.

Abstract: Various embodiments include methods of forming interconnect structures, and the structures formed by such methods. In one embodiment, a method can include: providing a precursor interconnect structure having: a photosensitive polyimide (PSPI) layer; a controlled collapse chip connection (C4) bump overlying the PSPI layer; and a solder overlying the C4 bump and contacting a side of the C4 bump. The method can further include recessing a portion of the PSPI layer adjacent to the C4 bump to form a PSPI pedestal under the C4 bump. The method can additionally include forming an underfill abutting the PSPI pedestal and the C4 bump, wherein the underfill and the solder form an interface separated from the PSPI pedestal.

Abstract: Packaging methods and packaged devices are disclosed. In one embodiment, a method of packaging a semiconductor device includes forming a first redistribution layer (RDL) over a carrier, and forming a plurality of through assembly vias (TAVs) over the first RDL. An integrated circuit die is coupled over the first RDL, and a molding compound is formed over the first RDL, the TAVs, and the integrated circuit die. A second RDL is formed over the molding compound, the TAVs, and the integrated circuit die.

Abstract: A package structure includes a first substrate bonded to a second substrate by connecting metal pillars on the first substrate to connectors on the second substrate. A first metal pillar is formed overlying and electrically connected to a metal pad on a first region of the first substrate, and a second metal pillar is formed overlying a passivation layer in a second region of the first substrate. A first solder joint region is formed between metal pillar and the first connector, and a second solder joint region is formed between the second metal pillar and the second connector. The thickness of the first metal pillar is greater than the thickness of the second metal pillar.