Abstract: An integrated circuit package system comprising: providing a lead frame; forming an integrated circuit package including the lead frame; providing a selectively exposed area on the lead frame; and coating a conductive shielding layer on the integrated circuit package for coupling the selectively exposed area.

Abstract: An integrated circuit package system includes: forming a first lead and a second lead; connecting an integrated circuit die with the first lead; forming an encapsulation over the integrated circuit die, the first lead, and the second lead with a portion of a top side of the second lead exposed; and forming a shield over the encapsulation, the first lead, and the second lead with the shield not in contact with the first lead.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.

Abstract: Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.

Abstract: A semiconductor module comprises at least one semiconductor chip having at least one semiconductor switch. The at least one semiconductor chip is arranged on a carrier substrate. At least one driver component drives the at least one semiconductor switch. The at least one driver component is arranged on a circuit board. The at least one driver component has at least one input for receiving a control signal. The circuit board has a galvanic isolation in a signal path between the at least one driver component and the at least one semiconductor chip.

Abstract: A semiconductor chip includes a through-silicon via (TSV), a device region, and a cross-talk prevention ring encircling one of the device region and the TSV. The TSV is isolated from substantially all device regions comprising active devices by the cross-talk prevention ring.

Abstract: A semiconductor device includes a semiconductor chip, electrodes pads, first and second insulating layers, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The first insulating layer is formed on the first and second areas of the semiconductor chip and exposes the electrode pads. The first conductive pattern transfers a signal and is formed on the first insulating layer. A second insulating layer is formed on the first conductive pattern and the first insulating layer. The second conductive pattern is formed on the second insulating layer and provides a ground potential. The external terminals are formed on the first and second patterns at the second area.

Abstract: A multilayer dielectric substrate that mounts a semiconductor device in a cavity formed on a substrate. The multilayer dielectric substrate includes an opening formed in a surface-layer grounding conductor on the substrate in the cavity, and an impedance transformer, with a length of about ¼ of an in-substrate effective wavelength of a signal wave, electrically connected through the opening to the cavity. The multilayer dielectric substrate further includes a short-circuited end dielectric transmission line with a length of about ¼ of the in-substrate effective wavelength of the signal wave, a coupling opening formed on an inner-layer grounding conductor in a connecting section of the impedance transformer and the dielectric transmission line, and a resistor formed in the coupling opening.

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

Abstract: A total ionizing dose suppression architecture for a transistor and a transistor circuit uses an “end cap” metal structure that is connected to the lowest potential voltage to overcome the tendency of negative charge buildup during exposure to ionizing radiation. The suppression architecture uses the field established by coupling the metal structure to the lowest potential voltage to steer the charge away from the critical field (inter-device) and keeps non-local charge from migrating to the “birds-beak” region of the transistor, preventing further charge buildup. The “end cap” structure seals off the “birds-beak” region and isolates the critical area. The critical area charge is source starved of an outside charge. Outside charge migrating close to the induced field is repelled away from the critical region. The architecture is further extended to suppress leakage current between adjacent wells biased to differential potentials.

Abstract: A shielding structure for semiconductor includes a semiconductor substrate, at least one active region defined on the semiconductor substrate, a protecting layer, a shielding layer, and a covering layer. The protecting layer, produced by a semiconductor process, is disposed on the surface of the active region. The shielding layer produced by a semiconductor process is disposed on the surface of the protecting layer. The covering layer covers the shielding layers, and the protecting layer is harder than the covering layer. In the above-mentioned structure, the harder protecting layer is provided to prevent the active regions from heat damage.

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed on a plurality of encapsulated modules by attaching a plurality of modules (30-33) to a process carrier (10) using a double side adhesive tape (12) before encapsulating the modules with a molding compound (16), and then forming shielding via ring structures (51-54) in the molding compound (16) to surround and shield each module. After removing the adhesive tape (12) to expose a surface of the encapsulated modules, a multi-layer circuit substrate (101) is formed over the exposed surface, where the circuit substrate includes shielding via structures (121-124) that are aligned with and electrically connected to the shielding via ring structures (51-54), thereby encircling and shielding the circuit module(s).

Abstract: Microfeature dies with redistribution structures that reduce or eliminate line interference are disclosed. The microfeature dies can include a substrate having a bond site and integrated circuitry electrically connected to the bond site. The microfeature dies can also include and a redistribution structure coupled to the substrate. The redistribution structure can include an external contact site configured to receive an electric coupler, a conductive line that is electrically connected to the external contact site and the bond site, and a conductive shield that at least partially surrounds the conductive line.

Abstract: An improved electromagnetic shielding structure has been discovered. In one embodiment of the invention, an apparatus includes an inductor and an electrically conductive enclosure that electromagnetically shields the inductor. The electrically conductive enclosure has an aperture at least as large as the inductor. The aperture is substantially centered around a projected surface of the inductor. The apparatus may include one or more electrically conductive links extending across the aperture and electrically coupled to the electrically conductive enclosure. The electrically conductive links reduce an effect of electromagnetic signals external to the electrically conductive enclosure on the inductor.

Abstract: This invention provides a magnetic shielding package structure of a magnetic memory device, in which at least a magnetic memory device is embedded between a magnetic shielding substrate and a magnetic shielding layer. A plurality of through vias is formed in the magnetic shielding substrate or the magnetic shielding layer, and a plurality of conductive contacts passes through the through vias such that electrical connection between the magnetic memory device and the external is established.

Abstract: A stackable microelectronic component includes a dielectric layer having an attachment portion. The dielectric layer has a first side, a second side, and outer ends lying outwardly of the attachment portion. The outer ends are offset from the attachment portion. A semiconductor chip is assembled to the second side of the dielectric layer at the attachment portion. First terminal structures are carried by the outer ends of the dielectric layer for connecting the semiconductor chip with external circuitry located above the first side of the dielectric layer. Second terminal structures are carried by the outer ends of the dielectric layer for connecting the semiconductor chip with external circuitry located below the second side of the dielectric layer.

Abstract: Strip metallic thin films each having a width of 180 ?m or so are disposed in parallel at intervals of 10 ?m to 50 ?m on the surface of a protection layer formed on the silicon substrate and at their corresponding spots located on the upper side of an analog circuit formed in a silicon substrate. These strip metallic thin films are connected to one another at their ends or centers to form a comb-like shield section and one end thereof is connected to its corresponding external connecting post. Incidentally, the shield section is formed by copper plating in the same process as redistribution wirings that connect electrode pads at an outer peripheral portion of the silicon substrate to their corresponding external connecting posts.

Abstract: A stacked die system (10) has a first die (16) having a first surface with active circuitry, a second die (18) having a first surface with active circuitry, and a conductive shield (28) interposed between the first surface of the first die and the first surface of the second die. In one embodiment, the distance between the first surfaces of the first and second die is less than one millimeter. The stacked die system may also include a package substrate (12) where the active circuitry of the first and second die are electrically connected to the package substrate. The electrical connections may be formed using wire bonds (56, 58, 60, 62). Alternatively, the first die may be connected to the package substrate in a flip chip configuration. In one embodiment, the active circuitry of the first die generates RF signals where the shield helps protect the RF signals from interference caused by the active circuitry of the second die.

Abstract: An integrated circuit (IC) package structure with an electromagnetic interference (EMI) shielding structure utilizes double-layer successive cladding process. A dielectric coating layer and an EMI shielding layer material are sequentially coated on surface of a carrying substrate, an IC on the carrying substrate, and all the other devices. The EMI shielding layer is closely adhered to and bonded on a ground metal area exposed on an upper surface of the carrying substrate, the EMI shielding layer on the package is connected to a ground plane under the carrying substrate in series, so as to form a protection cover having a closed EMI shielding space to isolate the interference of electromagnetic waves from outside.

Abstract: An integrated circuit includes a first integrated circuit die having a first circuit and a first intra-chip interface and a second integrated circuit die having a second circuit and a second intra-chip interface and a remote interface, wherein the first intra-chip interface and the second intra-chip interface electro-magnetically communicate first signals between the first circuit and the second circuit, and wherein the remote interface is coupled to engage in electromagnetic communications with a remote device. In an embodiment of the present invention, a shielding element shields the electromagnetic communications with the remote device from the electromagnetic communication of the first signals. In other embodiments, antenna beam patterns or differing polarizations are used to isolate the electromagnetic communications with the remote device from the electromagnetic communication of the first signals.

Abstract: In one embodiment, the present invention includes a coreless substrate to provide a power net connection and a ground net connection to a semiconductor die, which is electrically coupled to the substrate, and a stiffener surrounding the semiconductor die and electrically coupled to the substrate to provide a lateral current path to the semiconductor die. Other embodiments are described and claimed.

Abstract: The present invention is directed to a high frequency module used for wireless communication module, and comprises a first organic substrate (11) in which conductive pattern or patterns are formed on the principal surface thereof and one element body (7) or more are mounted, and a second organic substrate (12) in which a recessed portion (22) is formed in correspondence with the area where the element body or bodies (7) are mounted at the connecting surface to the first organic substrate (11). In the state where the second organic substrate (12) is connected to the first organic substrate (11), an element body accommodating portion (24) which seals the element body or bodies (7) is constituted by the recessed portion (22), wherein the element body accommodating portion (24) is adapted so that moisture resistance characteristic and oxidation resistance characteristic are maintained.

Abstract: A semiconductor module (A1) comprises a semiconductor device (10) provided with a semiconductor chip, and a conductive cover (6) for electromagnetic shielding bonded to the semiconductor device (10) via an adhesive coat (8). The conductive cover (6) includes a surface facing the adhesive coat (8), and the surface is formed with a convex portion (6a) protruding toward the adhesive coat (8). Around the convex portion (6a), a space (7) is formed for filling in adhesive to form the adhesive coat (8).

Abstract: Methods and structures provide a shielded multi-layer package for use with multi-chip modules and the like. A substrate (102) (e.g., chip carrier) has an adhesive layer (104), where electronic components (106, 108) are attached. An insulating layer (110) is formed over the plurality of electronic components, and a conductive encapsulant structure (115) is formed over the insulating layer. The adhesive layer is detached from the electronic components, and multi-layer circuitry (140) is formed over, and in electrical communication with, the plurality of electronic components. A shielding via (150) is formed through the multilayer circuitry such that it contacts the conductive encapsulant.

Abstract: An integrated circuit package-in-package system comprising: connecting a first integrated circuit device and a package substrate; applying a magnetic film over the first integrated circuit device; mounting a second integrated circuit device having an inner encapsulation over the magnetic film; and forming a package encapsulation over the first integrated circuit device, the magnetic film, and the second integrated circuit device.

Abstract: A method of enabling alignment of a wafer in at least one exposure step of an integrated circuit process after a UV-blocking metal layer is formed over the whole wafer covering a patterned upmost metal layer of the integrated circuit is described, wherein the wafer has an edge portion where a composite dielectric layer corresponding to the dielectric layers of the integrated circuit is formed. The method includes forming a cavity in the composite dielectric layer over the edge portion of the wafer in the patterning process of the upmost metal layer, such that an alignment mark is formed after the UV-blocking metal layer is formed.

Abstract: Circuit structures and methods of fabrication are provided for facilitating implementing a complete electronic system in a compact package. The circuit structure includes, in one embodiment, a chips-first multichip base layer with conductive structures extending therethrough. An interconnect layer is disposed over the front surface of the multichip layer and includes interconnect metallization electrically connected to contact pads of the chips and to conductive structures extending through the structural material. A redistribution layer, disposed over the back surface of the multichip layer, includes a redistribution metallization also electrically connected to conductive structures extending through the structural material.

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed on a plurality of encapsulated modules by attaching a molded package panel to a process carrier (10) using a double side adhesive tape (12) before singulating the individual modules without separating them from the double side adhesive tape. By forming a conductive layer (50) over a mold encapsulant (16) and on the sidewalls of grooves (40-47) that are cut through the mold encapsulant (16) and underlying circuit substrate (14), the conductive layer (50) may be electrically coupled to one or more conductive connection pads (61-66) by virtue of the placement of the conductive connection pads at the periphery or side of the circuit substrate (14).

Abstract: Circuit structures and methods of fabrication are provided for facilitating implementing a complete electronic system in a compact package. The circuit structure includes, in one embodiment, a chips-first multichip base layer with conductive structures extending therethrough. An interconnect layer is disposed over the front surface of the multichip layer and includes interconnect metallization electrically connected to contact pads of the chips and to conductive structures extending through the structural material. A redistribution layer, disposed over the back surface of the multichip layer, includes a redistribution metallization also electrically connected to conductive structures extending through the structural material.

Abstract: An EMI shielded semiconductor package is provided. The package includes a substrate and a chip disposed on the substrate. The chip is electrically connected to the substrate by a plurality of bonding wires. At least one shielding conductive block is formed on the substrate and electrically connected to the ground trace of the substrate. A sealant is formed on the substrate and covers the chip, bonding wires and the shielding conductive block. The sealant has a side surface to expose a surface of the shielding conductive block. A layer of conductive film is formed on the outer surface of the sealant and covers the exposed surface of the shielding conductive block thereby shielding the chip from electromagnetic interference.

Abstract: A semiconductor chip package includes a main board; a ceramic substrate having a cavity within which at least one chip is electrically mounted, the cavity being placed at a lower portion of the ceramic substrate facing the main board; and a conductive shielding layer provided with a predetermined thickness on the outside of the ceramic substrate. The ceramic substrate includes: at least one first ground line electrically connecting the conductive shielding layer with the main board; at least one second ground line electrically connecting the conductive shielding layer with the chip; and at least one signal line electrically connecting the chip with the main board. Thus, manufacturing costs are lowered because of the reduced number of components being used, miniaturization in device design can be achieved because of the small volume of the package, and the ground performance can be improved.

Abstract: According to one embodiment, an integrated circuit includes an internal circuit and a resin layer which covers the internal circuit. A radio wave absorbing material is mixed in the resin layer.

Abstract: A semiconductor device includes a first level layer, a transmitting antenna provided on the first level layer and extending in a first direction, a receiving antenna provided on the first level layer and extending in the first direction, and a plurality of first wiring portions provided on the first level layer and extending in a second direction that makes an angle of 45 to 90 degrees with respect to the first direction.

Abstract: An electromagnetic shielding device in an infrared receiver comprises of a wiring frame (4) of metal and an electromagnetic shielding cover (1) of metal. There is a window (2) in the electromagnetic shielding cover (1), in which there is provided a shielding net (3). The electromagnetic shielding cover (1) has a protruding tongue (6) in the bottom of its both sides respectively and the protruding tongues (6) are bent downwards and entad to engage on the wiring frame (4), thus forming an electromagnetic shielding structure transparent to a chip inside. The electromagnetic shielding device of the present invention is simple in structure, reasonable in design, easy to manufacture, low-cost, high qualified ratio and thus suitable for mass productivity. The electromagnetic shielding device improves the electromagnetic interference preventive capability of a semiconductor element and thus increases the sensibility and reliability of an infrared receiver.

Abstract: The ground noise is reduced which propagates between circuit elements in a circuit device having a multiple stack structure. A grounding bonding pad provided on the surface of a second circuit element is connected to a bonding wire provided on the surface of a conduction layer via a grounding wire such as gold. A bonding pad provided on the surface of the conductive layer is connected to a lead provided on a ground wire via a grounding wire such as gold. This structure creates a capacitance between the second circuit element and the conduction layer so as to prevent the propagation of noise circuit from element to the ground wiring.

Abstract: A semiconductor die package includes a substrate, a semiconductor die mounted on the substrates a molding covering the semiconductor die and which is formed on the substrate and a conductive layer laminated on the molding.

Abstract: An integrated circuit package for blocking electromagnetic interference includes a top layer formed in a package substrate. A first plurality of via groups is formed in the top layer surrounding an area on the top layer for an integrated circuit die. At least one lower layer is formed in the package substrate. A lower via group is formed in the lower layer below each of the first plurality of via groups, respectively. An electrical connection is formed in the lower layer between each lower via group and the first plurality of via groups, respectively. A ground connection is formed in the integrated circuit package for each lower via group to connect each lower via group to an electrical ground to block electromagnetic interference.

Abstract: In order to achieve electromagnetic and/or thermal isolation between components in close proximity to each other on a common module substrate, an alternate package and method for manufacturing the package is provided. Inventive methods utilize a grounded, metal-coated overmold for a IC module package that can provide an alternate thermal path to heat sink high power components generating excess heat energy and/or provide general electromagnetic shielding and isolation between two integrated circuits in very close proximity that are susceptible to electromagnetic interference. A dielectric layer conformably covers semiconductor dies mounted on a substrate. On some semiconductor dies, a portion of the dielectric layer is removed from the back surface of the semiconductor dies to allow direct contact between the exposed back surface of the dies and a metallization layer forming part of the overmold. This direct contact allows heat energy to be drawn away from the dies.

Abstract: A workpiece has at least two semiconductor chips, each semiconductor chip having a first main surface, which is at least partially exposed, and a second main surface. The workpiece also comprises an electrically conducting layer, arranged on the at least two semiconductor chips, the electrically conducting layer being arranged at least on regions of the second main surface, and a molding compound, arranged on the electrically conducting layer.

Abstract: A workpiece has at least two semiconductor chips, each semiconductor chip having a first main surface, which is at least partially exposed, and a second main surface. The workpiece also comprises an electrically conducting layer, arranged on the at least two semiconductor chips, the electrically conducting layer being arranged at least on regions of the second main surface, and a molding compound, arranged on the electrically conducting layer. In the molding compound a contact via is arranged.

Abstract: A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.

Abstract: The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.

Abstract: According to various aspects, exemplary embodiments are provided of clips that may be compatible with surface mount technology. The clips may be surface mountable to a substrate for allowing repeated releasable attachment and detachment of a shielding structure thereto. In one exemplary embodiment, a clip generally includes a base member having generally opposed first and second side edge portions. Two or more arms extend generally upwardly in a first direction from the base member. The clip also includes a generally flat pick-up surface configured to enable the clip to be picked up by a head associated with pick-and-place equipment.

Abstract: A mounted body (100) of the present invention includes: a semiconductor element (10) having a surface (10a) on which element electrodes (12) are formed and a rear surface (10b) opposing the surface (10a); and a mounting board (30) on which wiring patterns (35) each having an electrode terminal (32) are formed. The rear surface (10b) of the semiconductor element (10) is in contact with the mounting board (30), and the element electrodes (12) of the semiconductor element (10) are connected electrically to the electrode terminals (32) of the wiring pattern (35) formed on the mounting board (30) via solder connectors (20) formed of solder particles assembled into a bridge shape. With this configuration, fine pitch connection between the element electrodes of the semiconductor element and the electrode terminals of the mounting board becomes possible.

Abstract: A package structure with a plurality of chips stacked on each other includes a substrate, a first chip and second chip. The substrate has a dielectric layer, a metal layer having a conducting trace area and a shielding area formed on the dielectric layer, and a solder mask formed on the conducting trace area. The first chip and the second chip are electrically connected to the conducting trace area and arranged on the solder mask respectively. The first chip has a package body connected with one surface of the metal layer for arranging the first chip between the solder mask and the shielding area of the metal layer. The second chip has a package body connected with the other surface of the metal layer for arranging the second chip between the solder mask and the shielding area of the metal layer.

Abstract: According to an example embodiment, a stacked die package 800 includes a first die (806), first active circuitry (808) disposed on an upper surface of the first die, and a first conductive pattern (820) disposed on the first active circuitry. The stacked die package further includes a second die (826) disposed over the first die, where the first die is wider than the second die in a cross-section of the stacked die package, second active circuitry (828) disposed on an upper surface of the second die, and a second conductive pattern (830) disposed on the second active circuitry. The stacked die package further includes a first wirebond (822) that connects the first conductive pattern to the second conductive pattern and a mold compound (824) disposed on the first die, the mold compound encapsulating the second die and the wirebond.

Abstract: The present invention provides a package structure and a method for forming the same; wherein the structure comprises a substrate with certain open through holes filled with conducting metals for performing electrical connection or heat dissipation, a chip with bonding pads attached on the contacting pad by an adhesive with high thermal conductivity, wire bounded the contacting pad and the chip pad, a protection layer covered on the chip, wire and a portion of pad by molding or dispensing and a solder ball disposed on the pad. The advantages of the present invention are: the structure is reduced; the heat dissipation of the structure is enhanced; the structure can form package on package structure; the pads provides better ground shielding, heat dissipation of the structure.

Abstract: According to an exemplary embodiment, a structure includes at least one SOI (semiconductor-on-insulator) transistor situated over a buried oxide layer, where the buried oxide layer overlies a bulk substrate. The structure further includes an electrically charged field control ring situated over the buried oxide layer and surrounding the at least one SOI transistor. A width of the electrically charged field control ring is greater than a thickness of the buried oxide layer. The electrically charged field control ring reduces a conductivity of a surface portion of the bulk substrate underlying the field control ring, thereby minimizing RF coupling of the at least one SOI transistor through the bulk substrate. The structure further includes an isolation region situated between the electrically charged field control ring and the at least one SOI transistor. A method to achieve and implement the disclosed structure is also provided.

Abstract: In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.

Abstract: Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.