Abstract: The present technology relates to an image pickup device and electronic apparatus that enables suppression of dark current. There are included: a photoelectric conversion unit configured to perform a photoelectric conversion; a trench engraved in a semiconductor substrate; a negative fixed charge film having an oxide film, a nitrogen film, and an oxide film on a side wall of the trench; and an electrode film formed in the fixed charge film. The oxide film configuring the fixed charge film includes silicon monoxide (SiO), and the nitrogen film includes silicon nitride (SiN). The nitrogen film configuring the fixed charge film can also include a polysilicon film or a high dielectric constant film (high-k film). The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

Abstract: Embodiments relate to image signal processors (ISP) that include binner circuits that down-sample an input image. An input image may include a plurality of pixels. The output image of the binner circuit may include a reduced number of pixels. The binner circuit may include a plurality of different operation modes. In a bin mode, the binner circuit may blend a subset of input pixel values to generate an output pixel quad. In a skip mode, the binner circuit may select one of the input pixel values as the output pixel pixel. The selection may be performed randomly to avoid aliasing. In a luminance mode, the binner circuit may take a weighted average of a subset of pixel values having different colors. In a color value mode, the binner circuit may select one of the colors in a subset of pixel values as an output pixel value.

Abstract: In some embodiments, a spectrometer is presented. In accordance with some embodiments, the spectrometer includes an optical sensor array, the optical sensor array including a substrate and an array of pixels formed on the substrate; a spectral filter array formed over the pixels of the optical sensor array, the spectral filter array filtering incident light such that each pixel receives light of a spectral transmission profile associated with the pixel; a transparent spacer formed over the spectral filter array; and an opaque mask having input apertures allowing light through the transparent spacer and onto a portion of the spectral filter array. The spectrometer can be formed from the optical sensor array using a combination of photolithographic techniques and bonding of certain layers.

Abstract: An image sensor may include an array of imaging pixels arranged in rows and columns. Each column of imaging pixels may be coupled to a respective column output line. Each column output line may be coupled to readout circuitry that includes an adjustable current source, sample and hold circuitry, and slew rate sensing and current source control circuitry. To decrease the settling time of the column output line, the slew rate sensing and current source control circuitry may increase the magnitude of a bias current provided by the adjustable current source when the slew rate of the output voltage is above a threshold. When the slew rate of the output voltage is below the threshold, the bias current may revert to a lower magnitude to conserve power.

Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) DoP image sensor and a method for forming the SOI DoP image sensor. In some embodiments, a semiconductor substrate comprises a floating node and a collector region. A photodetector is in the semiconductor substrate and is defined in part by a collector region. A transfer transistor is over the semiconductor substrate. The collector region and the floating node respectively define source/drain regions of the transfer transistor. A semiconductor mesa is over and spaced from the semiconductor substrate. A readout transistor is on and partially defined by the semiconductor mesa. The semiconductor mesa is between the readout transistor and the semiconductor substrate. A via extends from the floating node to a gate electrode of the readout transistor.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: The invention is directed to a swashplate angle sensor (10) for a variable displacement hydraulic unit (1). The hydraulic unit (1) comprising a housing (2), within which a swashplate (3) with a rod shaped feedback-link (12) fixedly attached to the swashplate (3) is arranged pivotable around a swashplate axis (7). The angle sensor (10) comprising a magnet (16) mounted rotatable on a magnet carrier (13), and a sensor (15) for sensing the orientation of the magnet (16). The magnet carrier (13) is located in a control block (14) attached to the housing (2) and is located parallel to the feedback-link (12). The magnet carrier (13) is rotatable around a sensor axis (18) being parallel to the swashplate axis (7). A linkage spring (11) provides a connection between the feedback-link (12) and the magnet carrier (13) such that a pivoting of the swashplate (3) with the feedback-link (12) causes a rotation of the magnet carrier (13).

Abstract: A radiation imaging apparatus avoids collisions of the radiation with an obstacle, and includes a flat panel detector (FPD) connected with a supporting axis facing a vertical direction to a ray detection surface. A supporting axis is supported rotatably due to the action of the bearing and the flat panel detector rotates around the supporting axis as the center of the rotation via the supporting axis by driving with the motor. A frame member surrounding the flat panel detector has a circular outer appearance of which a center is the supporting axis, and the diameter of the frame member is longer than the length of the diagonal line of the flat panel detector.

Abstract: The present disclosure relates to an imaging apparatus comprising an image sensor that includes an imaging surface in which many pixels are arranged vertically and horizontally, a pixel control unit that controls the image sensor, selects a pixel corresponding to a sampling function among pixels configuring a block by applying the sampling function for each block acquired by partitioning the imaging surface of the image sensor into a plurality of blocks, and outputs a sampling signal based on a pixel value of the selected pixel, and a reduced image generating unit that generates a reduced image on the basis of the sampling signal for each block output from the image sensor.

Abstract: A semiconductor device with an arithmetic processing function is provided. In the semiconductor device, an imaging portion and an arithmetic portion are electrically connected to each other through an analog processing circuit 24. The imaging portion includes a pixel array 21 in which pixels 20 used for imaging and reference pixels 22 used for image processing are arranged in a matrix, and a row decoder 25. The arithmetic portion includes a memory element array 31 in which memory elements 30 and reference memory elements 32 are arranged in a matrix, an analog processing circuit 34, a row decoder 35, and a column decoder 36.

Abstract: An apparatus is described. The apparatus includes a smart image sensor having a memory and a processor that are locally integrated with an image sensor. The memory is to store first program code to be executed by the processor. The memory is coupled to the image sensor and the processor. The memory is to store second program code to be executed by the processor. The first program code is to cause the smart image sensor to perform an analysis on one or more images captured by the image sensor. The analysis identifies a region of interest within the one or more images with machine learning from previously captured images. The second program code is to cause the smart image sensor to change an image sensing and/or optical parameter in response to the analysis of the one or more images performed by the execution of the first program code.

Abstract: The present technique relates to an apparatus and a method for measurement, and a program each of which enables distance estimation to be more simply carried out with higher accuracy. A three-dimensional measurement apparatus has a rotation control portion controlling rotation of a photographing portion by a rotation mechanism in such a way that the photographing portion is rotated with a center of rotation as an axis in a state in which a distance from the center of rotation of the rotation mechanism portion to a focal point position of the photographing portion is a constant distance; and a distance calculating portion calculating a distance to an object on a space on the basis of a plurality of photographed images obtained through photographing in positions different from one another by the photographing portion in a state in which the photographing portion is rotated.

Abstract: An imaging apparatus includes a scanning circuit configured to perform shutter scanning and readout scanning, a first control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the readout scanning, and a second control unit configured to control the capacitance setting unit to set a capacitance value of the input node in the shutter scanning.

Abstract: An embodiment of a Wearable Computer apparatus includes a first portable unit for data gathering and communicating feedback and a second portable unit for processing the at least gathered data from the first unit.

Abstract: Technologies pertaining to a compressive sensing snapshot spectrometer are described herein. Light is focused through an array of filters onto an array of optical detectors by way of an optical objective. Each detector in the array receives light from a single respective filter in the filters. Each filter in the filters has a spectral transmittance function that overlaps a spectral transmittance function of at least one other filter. A compressive sensing algorithm is executed over outputs of the detectors based upon the known spectral transmittance functions of the filters. Based upon the execution of the compressive sensing algorithm, intensity values of the light are identified for a number of spectral bins that is greater than a number of detectors in the array.

Abstract: The invention relates to annotating live video during endoscopy medical procedures.

Abstract: The present disclosure provides a reading circuit, a driving method of the reading circuit and a photoelectric detector including the reading circuit. The reading circuit includes a reset sub-circuit, a readout sub-circuit, a driving sub-circuit and an integration sub-circuit. The reset sub-circuit is configured to reset voltages at the first node and the second node under the control of a reset signal inputted from the first signal terminal. The integration sub-circuit is configured to cause the first node and the second node to communicate with each other so as to change the voltages at the first node and the second node. The readout sub-circuit is configured to read out a current value in a case where the voltage at the first node controls the driving sub-circuit to be turned on, and output the current value through the fifth signal terminal.

Abstract: A method for capturing an image from an image sensor having a plurality of sensing elements includes receiving a first group of image signals from a first portion of the plurality of sensing elements using at least a first binned read mode; receiving a second group of image signals from a second portion of the plurality of sensing elements using a non-binned read mode; generating a first image based on at least the first group of image signals and the second group of image signals; and generating a second image based on the second group of image signals.

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a capacitor on the interlayer dielectric layer, and a PN-junction diode in the semiconductor substrate and below the capacitor. The PN-junction diode includes a p-type ion implanted region and an n-well located below the p-type ion implanted region and completely surrounding the p-type ion implanted region. The PN-junction diode in the semiconductor substrate may prevent noise from entering the capacitor to improve the noise immunity of the semiconductor device.

Abstract: A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further includes: a driving semiconductor layer including a driving channel region, a driving source region, and a driving drain region; a first electrode layer, a portion of the first electrode layer overlapping the driving channel region; a second electrode layer overlapping the first electrode layer; a node connection line having a first side connected to the first electrode layer; a pixel electrode overlapping the first electrode layer and the second electrode layer; and a shielding layer between the first electrode layer and the pixel electrode and overlapping the first electrode layer, the node connection line, and the pixel electrode.

Abstract: An embodiment of an Eye Tracking Wearable Computer apparatus includes a first portable unit for data gathering and communicating feedback and a second portable unit for processing the at least gathered data from the first unit.

Abstract: When the amplification ratio is low and strong incident light causes a large charge, the signal retrieved from regions where the incident light is weak is also weak, but when the amplification ratio is high in regions where the incident light is weak, the signal retrieved from regions where the incident light is strong becomes saturated. Therefore, the dynamic range of the imaging unit is narrow. Provided is an imaging unit comprising an imaging section that includes a first group having one or more pixels and a second group having one or more pixels different from those of the first group; and a control section that, while a single charge accumulation is performed in the first group, causes pixel signals to be output by performing charge accumulation in the second group a number of times differing from a number of times charge accumulation is performed in the first group.

Abstract: There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.

Abstract: A novel semiconductor device, a semiconductor device where influence of noise is lessened, or a semiconductor device with high reliability is provided. A first circuit has a function of generating an optical data signal in accordance with the amount of irradiation light and a function of generating a reset signal corresponding to a reset state of the first circuit. A second circuit has a function of controlling output of the optical data signal and the reset signal from the first circuit to a fourth circuit. A third circuit has a function of controlling generation of the reset signal to be output from the first circuit to the fourth circuit. The fourth circuit has a function of calculating the difference between the optical data signal input from the first circuit and the reset signal input from the first circuit after input of the optical data signal.

Abstract: An image sensing circuit includes floating node, switch circuit, capacitor(s), and counting circuit. The floating node receives image electric charge from a photosensitive pixel. The switch circuit is coupled between floating node and capacitor(s) to dynamically connect and disconnect floating node and capacitor(s). The capacitor(s) include(s) first terminal(s) connected to switch circuit and second terminal(s) connected to ground. The counting circuit counts the number of charging and discharging behavior of capacitor(s) according to dynamic switches of switch circuit wherein the switch circuit dynamically switches to make capacitor(s) be charged and discharged dynamically in response to one exposure time period to receive energy of image electric charge which is determined by the number of charging and discharging behavior of the capacitor(s) and the capacitor(s)' potential value measured finally.

Abstract: An image sensor may include pixel having nested photosensitive regions. A pixel with nested photosensitive regions may include an inner photosensitive region that has a rectangular light collecting area. The inner photosensitive region may be formed in a substrate and may be surrounded by an outer photosensitive region. The pixel with nested photosensitive regions may include trunk circuitry and transistor circuitry. Trunk circuitry may include a voltage supply source, a charge storage node, and readout transistors. Trunk circuitry may be located in close proximity to both the inner and outer photosensitive regions. Transistor circuitry may couple the inner photosensitive region, the outer photosensitive region, and trunk circuitry to one another. Microlenses may be formed over the nested photosensitive groups. Hybrid color filters having a single color filter region over the inner photosensitive region and a portion of the outer photosensitive region may also be used.

Abstract: A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

Abstract: [Summary] [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

Abstract: According to one aspect, embodiments herein provide a unit cell comprising a photodiode, a MOSCap having an input node coupled to the photodiode, a reset switch selectively coupled between the MOSCap and a reset voltage, and a transistor coupled to the input node of the MOSCap, wherein, in a first mode of operation of the unit cell, the reset switch is configured in an open state and charge generated by light incident on the photodiode accumulates at the input node of the MOSCap in response to voltage at the input node being less than a threshold voltage, and wherein, in a second mode of operation of the unit cell, the reset switch is configured in the open state and the charge generated by the light incident on the photodiode accumulates on the MOSCap in response to the voltage at the input node being greater than the threshold voltage.

Abstract: A photoelectric conversion apparatus includes a charge accumulation region of a first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, and an element isolation. The first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region, and impurity concentration distributions of the charge accumulation region, the first semiconductor region and the second semiconductor region in a depth direction respectively have peaks at depth Rp1, Rp2, and Rp3, and Rp1<Rp2<Rp3 is satisfied. Impurity concentration C1 of the first semiconductor region at Rp2 is higher than impurity concentration C2 of the second semiconductor region at Rp3.

Abstract: A circuit provides a regulated voltage supply for other circuits. The circuit includes a bias current source and a reference voltage source. The circuit includes a pass transistor and a feedback transistor. The pass transistor receives input from the feedback transistor that generates a regulated voltage at a terminal of the pass transistor. The feedback transistor receives inputs from the regulated voltage of the pass transistor and the reference voltage source. The feedback transistor provides voltage for the input of the pass transistor, thereby controlling the regulated voltage generated by the pass transistor. The regulated voltage generated by the pass transistor is provided as a regulated voltage supply to other circuits.

Abstract: An embodiment of a Wearable Computer with Natural User Interface apparatus includes a first portable unit for data gathering and communicating feedback and a second portable unit for processing the at least gathered data from the first unit.

Abstract: A pixel cell includes a first integration capacitor, a second integration capacitor, a photo detector and a transistor. The first integration capacitor includes a first lead operatively coupled to the photo detector. The second integration capacitor includes a first lead. The transistor is operatively coupled between the leads of the first and second integration capacitors for enabling current flow between the photo detector and the second integration capacitor only once a threshold voltage is met on the first integration capacitor.

Abstract: The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices.

Abstract: The invention discloses an array substrate, and a method for repairing a broken data line on an array substrate. The method for repairing a broken data line on an array substrate includes steps: performing a treatment on a part of a semiconductor layer corresponding to an opening in a data line so that the part of the semiconductor layer becomes a conductive region, and the ends of the opening in the data line are electrically connected to each other by the conductive semiconductor layer. The above method for repairing a broken data line provided by the invention is not affected by the linewidth of the data line so that the broken data line can be repaired in the case that the linewidth of the data line is relatively small.

Abstract: When the amplification ratio is low and strong incident light causes a large charge, the signal retrieved from regions where the incident light is weak is also weak, but when the amplification ratio is high in regions where the incident light is weak, the signal retrieved from regions where the incident light is strong becomes saturated. Therefore, the dynamic range of the imaging unit is narrow. Provided is an imaging unit comprising an imaging section that includes a first group having one or more pixels and a second group having one or more pixels different from those of the first group; and a control section that, while a single charge accumulation is performed in the first group, causes pixel signals to be output by performing charge accumulation in the second group a number of times differing from a number of times charge accumulation is performed in the first group.

Abstract: A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate.

Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Abstract: A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

Abstract: An imaging device includes a light-sensing pixel region; a first pixel region; a second pixel region; a first wiring layer disposed above the light-sensing pixel region; and a second wiring layer disposed above the topmost wiring layer of the wiring layer disposed above the light-sensing pixel region, above the second pixel region. The first pixel region is disposed between the light-sensing pixel region and the second pixel region, adjacent to the light-sensing pixel region and the second pixel region, wherein the first pixel region overlaps, in plan view, a first shielding portion included in the first wiring layer. The second pixel region overlaps, in plan view, a second shielding portion included in the second wiring layer. An electroconductive pattern is formed at the first wiring layer at a position overlapping the second pixel region in plan view.

Abstract: A device and method for area sensing and actuation comprises highly scalable sensing and actuation network that can control a high density of sensing and actuation elements over a physical area. The device comprises a matrix of CMOS sensing chips that each comprise a plurality of sensing electrodes arranged in a matrix of columns and rows along horizontal wires and vertical wires. The vertical wires carry an activation signal to activate a column of sensing electrodes, and the vertical wires carry sensing and actuation signals between the column of sensing electrodes and a processing chip. The signals may be amplified by CMOS sensing chips between the source and destination of the signals. In this way, signals may be received from and sent to a dense matrix of sensing electrodes spanning a large geographic area with little or no degradation.

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract: A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.

Abstract: Provided is a depth image generating apparatus. The depth image generating apparatus may include a filtering unit, a modulation unit, and a sensing unit. The filtering unit may band pass filter an infrared light of a first wavelength band among infrared lights received from an object. The modulation unit may modulate the infrared light of the first wavelength band to an infrared light of a second wavelength band. The sensing unit may generate an electrical signal by sensing the modulated infrared light of the second wavelength band.

Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, an isolation region, a floating diffusion region and a transfer gate. The photoelectric conversion region is formed in a semiconductor substrate. The isolation region surrounds the photoelectric conversion region, extends substantially vertically with respect to a first surface of the semiconductor substrate, and crosses the incident side of the photoelectric conversion region so as to block leakage light and diffusion carriers. The floating diffusion region is disposed in the semiconductor substrate above the photoelectric conversion region. The transfer gate is disposed adjacent to the photoelectric conversion region and the floating diffusion region, extends substantially vertically with respect to the first surface of the semiconductor substrate, and transmits the photo-charges from the photoelectric conversion region to the floating diffusion region.

Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.

Abstract: A display apparatus includes a first substrate having a display area and a non-display area surrounding the display area, an organic film on the first substrate, a first trench in the organic film in the non-display area, the first trench surrounding the display area and including a first sidewall on an inner side of the display apparatus, which includes a sidewall of the organic film, and a second sidewall on an outer side of the display apparatus, which includes a sidewall of the organic film, and a first blocking film containing an inorganic material and covering a surface of the organic film in the non-display area and the sidewall of the organic film included in the first sidewall of the first trench.

Abstract: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.

Abstract: The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.