With One Or More Field Relief Electrode Comprising Resistance Material (e.g., Semi Insulating Material, Lightly Doped Poly-silicon) (epo) Patents (Class 257/E29.011)
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Patent number: 8878330Abstract: An integrated circuit containing a voltage divider having an upper resistor of unsilicided gate material over field oxide around a central opening and a drift layer under the upper resistor, an input terminal coupled to an input node of the upper resistor adjacent to the central opening in the field oxide and coupled to the drift layer through the central opening, a sense terminal coupled to a sense node on the upper resistor opposite from the input node, a lower resistor with a sense node coupled to the sense terminal and a reference node, and a reference terminal coupled to the reference node. A process of forming the integrated circuit containing the voltage divider.Type: GrantFiled: August 6, 2012Date of Patent: November 4, 2014Assignee: Texas Instruments IncorporatedInventors: Hideaki Kawahara, Marie Denison, Sameer Pendharkar, Philip L. Hower, John Lin, Robert A. Neidorff
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Patent number: 8530877Abstract: A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.Type: GrantFiled: July 14, 2011Date of Patent: September 10, 2013Assignee: Sharp Kabushiki KaishaInventors: Junya Onishi, Shinobu Yamazaki, Kazuya Ishihara, Yushi Inoue, Yukio Tamai, Nobuyoshi Awaya
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Patent number: 8314471Abstract: In one embodiment, the present invention includes a semiconductor power device. The semiconductor power device comprises a trenched gate and a trenched field region. The trenched gate is disposed vertically within a trench in a semiconductor substrate. The trenched field region is disposed vertically within the trench and below the trenched gate. A lower portion of the trenched field region tapers to disperse an electric field.Type: GrantFiled: November 17, 2009Date of Patent: November 20, 2012Assignee: Diodes IncorporatedInventors: Chiao-Shun Chuang, Tony Huang
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Patent number: 7696535Abstract: A gallium nitride high electron mobility transistor, in which an inner field-plate is disposed between the gate and drain of the high electron mobility transistor, so that an electric field is distributed between gate and drain regions to reduce a peak value and to reduce gate leakage current while maintaining high frequency performance, thus obtaining a high breakdown voltage, reducing the capacitance between the gate and the drain attributable to a shielding effect, and improving linearity and high power and high frequency characteristics through variation in the input voltage of the inner field-plate.Type: GrantFiled: July 1, 2009Date of Patent: April 13, 2010Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyounghoon Yang, Sungsik Lee, Kiwon Lee, Kwangui Ko
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Patent number: 7391088Abstract: A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.Type: GrantFiled: May 3, 2007Date of Patent: June 24, 2008Assignee: Power Integrations, Inc.Inventor: Balu Balakrishnan
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Patent number: 7335944Abstract: A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.Type: GrantFiled: January 30, 2007Date of Patent: February 26, 2008Assignee: Power Integrations, Inc.Inventors: Sujit Banerjee, Donald Ray Disney
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Patent number: 7253059Abstract: A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At least one of the first and second output HVFETs is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.Type: GrantFiled: December 30, 2005Date of Patent: August 7, 2007Assignee: Power Integrations, Inc.Inventor: Balu Balakrishnan
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Patent number: 7220629Abstract: A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).Type: GrantFiled: September 29, 2006Date of Patent: May 22, 2007Assignee: Power Integrations, Inc.Inventor: Balu Balakrishnan
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Patent number: 7135748Abstract: A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).Type: GrantFiled: November 8, 2004Date of Patent: November 14, 2006Assignee: Power Integrations, Inc.Inventor: Balu Balakrishnan
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Patent number: 7119415Abstract: A monolithically integrated circuit comprises a thin film resistor (8) with low resistance and low temperature coefficient; a high frequency lateral power transistor device (9) including gate (17), source (16) and drain (15) regions, and a Faraday shield layer region (22; 22?) above the gate region; and at least a first metallization layer (28) there above for electrical connection of the gate (17), source (16) and drain (15) regions through via holes filled with conductive material (29c–d). The thin film resistor (8) and the Faraday shield layer region (22; 22?) are made in the same conductive layer, which is arranged below the first metallization layer (28).Type: GrantFiled: September 22, 2004Date of Patent: October 10, 2006Assignee: Infineon Technologies AGInventors: Hans Norström, Ted Johansson
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Patent number: 7112867Abstract: A high resistance region may be used to isolate the body of a first transistor from a body contact.Type: GrantFiled: December 5, 2003Date of Patent: September 26, 2006Assignee: Intel CorporationInventors: Ian Rippke, Stewart Taylor