Controllable By Variation Of Applied Mechanical Force (e.g., Of Pressure) (epo) Patents (Class 257/E29.324)
  • Patent number: 10759657
    Abstract: A method is provided for protecting a MEMS unit against infrared investigations, at least one layer being built into the structure of the MEMS unit or at least one layer being applied on a surface of the MEMS unit. The at least one layer absorbs, reflects or diffusely scatters more than 50%, in particular more than 90% of an infrared light incident upon it.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: September 1, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Michael Curcic, Oliver Willers, Sven Zinober, Ulrich Kunz
  • Patent number: 10067010
    Abstract: A strain detector includes a strain-causing portion, an insulation film formed on the strain-causing portion, a strain gauge formed on the insulation film and configured to detect the strain generated by the strain-causing portion as electric signals, an electrode connected to the strain gauge, a bonding pad extending from the electrode, a bonding wire connected to the bonding pad, and an insulative resin layer covering the strain gauge without covering the bonding pad and the bonding wire.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: September 4, 2018
    Assignee: NAGANO KEIKI CO., LTD.
    Inventors: Hiroshi Kodama, Eiji Takeda, Takamitsu Yoshizawa
  • Patent number: 9983716
    Abstract: An electronic device may have a housing in which components such as a display are mounted. A strain gauge may be mounted on a layer of the display such as a cover layer or may be mounted on a portion of the housing or other support structure. The layer of material on which the strain gauge is mounted may be configured to flex in response to pressure applied by a finger of a user. The strain gauge may serve as a button for the electronic device or may form part of other input circuitry. A differential amplifier and analog-to-digital converter circuit may be used to gather and process strain gauge signals. The strain gauge may be formed form variable resistor structures that make up part of a bridge circuit that is coupled to the differential amplifier. The bridge circuit may be configured to reduce the impact of capacitively coupled noise.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: May 29, 2018
    Assignee: Apple Inc.
    Inventors: Bingrui Yang, Martin P. Grunthaner, Steven P. Hotelling
  • Patent number: 9643836
    Abstract: The invention relates to a method for producing a pressure sensor, comprising the following steps: assembling a support substrate with a deformable membrane on which strain gauges have been deposited, wherein the deformable membrane comprises a thinned area at the center thereof, the support substrate is disposed on top of the deformable membrane, the support substrate comprises an upper surface and a lower surface in contact with the deformable membrane, and the support substrate also comprises lateral recesses arranged on top of the strain gauges and a central recess arranged on top of the thinned area of the membrane, so as to obtain a micromechanical structure; and, once the assembly has been obtained, depositing, in a single step, at least one conductive material on the upper surface of the support and in the lateral recesses of the support, said conductive material extending into the recesses in order to be in contact with the strain gauges so as to form electrical contacts in contact with the strain ga
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: May 9, 2017
    Assignees: AUXITROL S.A., CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Sebastiano Brida, Jean-Francois Le Neal
  • Patent number: 9246050
    Abstract: Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: January 26, 2016
    Assignee: HUNETPLUS CO., LTD.
    Inventors: Hyuk-Jin Cha, Heon Lee, Eun-Seo Choi
  • Patent number: 9040352
    Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: May 26, 2015
    Assignee: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Shun Meen Kuo, Li Li
  • Patent number: 9041082
    Abstract: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: May 26, 2015
    Assignees: International Business Machines Corporation, Centre National de la Recherche Scientifique
    Inventors: Catherine Anne Dubourdieu, Martin Michael Frank, Vijay Narayanan
  • Patent number: 9035451
    Abstract: The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: May 19, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 9029179
    Abstract: A method for producing a MEMS device having improved charge elimination characteristics includes providing a substrate having one or more layers, and applying a first charge elimination layer onto at least one portion of one given layer of the substrate. The method may then (1) apply a sacrificial layer onto the first charge elimination layer, (2) apply a second charge elimination layer onto at least a portion of the sacrificial layer, and (3) deposit a movable layer onto at least a portion of the second charge elimination layer. To form a structure within the movable layer the method may etch the movable layer. The method may then etch the sacrificial layer to release the structure.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: May 12, 2015
    Assignee: Analog Devices, Inc.
    Inventors: Fang Liu, Kuang L. Yang
  • Patent number: 9018030
    Abstract: A transparent force sensor for use in touch panel displays (touch screens) and method for fabricating the same are disclosed. The transparent force sensor is capable of detecting touch by measuring local pressure applied by a touch input to a display area of the touch screen.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: April 28, 2015
    Assignee: Symbol Technologies, Inc.
    Inventors: Hao Li, Papu Maniar, Yi Wei
  • Patent number: 9013011
    Abstract: A staggered die MEMS package includes a substrate having a converter cavity formed therein. A converter electronic component is mounted within the converter cavity. Further, a MEMS electronic component is mounted to both the substrate and the converter electronic component in a staggered die arrangement. By staggering the MEMS electronic component directly on the converter electronic component instead of locating the MEMS electronic component in a side by side arrangement with the converter electronic component, the total package width of the staggered die MEMS package is minimized. Further, by locating the converter electronic component within the converter cavity and staggering the MEMS electronic component directly on the converter electronic component, the total package height, sometimes called Z-height, of the staggered die MEMS package is minimized.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: April 21, 2015
    Assignee: Amkor Technology, Inc.
    Inventors: Bob Shih-Wei Kuo, Brett Arnold Dunlap, Louis B. Troche, Jr., Ahmer Syed, Russell Shumway
  • Patent number: 9006016
    Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: April 14, 2015
    Assignee: Board of Regents, The University of Texas System
    Inventors: Zeynep Celik-Butler, Suraj K. Patil, Donald Philip Butler
  • Patent number: 9006844
    Abstract: A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10 microns) from being inadvertently bonded to non-moving structures during a bonding process. The method includes surface preparation of silicon both structurally and chemically to aid in preventing moving structures from bonding to adjacent surfaces during bonding, including during high force, high temperature fusion bonding.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: April 14, 2015
    Assignee: DunAn Microstaq, Inc.
    Inventor: Parthiban Arunasalam
  • Patent number: 8981498
    Abstract: An electronic MEMS device is formed by a chip having with a main face and bonded to a support via an adhesive layer. A cavity extends inside the chip from its main face and is closed by a flexible film covering the main face of the chip at least in the area of the cavity. The support has a depressed portion facing the cavity and delimited by a protruding portion facing the main face of the chip. Inside the depressed portion, the adhesive layer has a greater thickness than the projecting portion so as to be able to absorb any swelling of the flexible film as a result of the expansion of the gas contained inside the cavity during thermal processes.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: March 17, 2015
    Assignee: STMicroelectronics S.r.l.
    Inventor: Federico Giovanni Ziglioli
  • Patent number: 8981501
    Abstract: A method of forming a semiconductor device is disclosed. Provided is a substrate having at least one MOS device, at least one metal interconnection and at least one MOS device formed on a first surface thereof. A first anisotropic etching process is performed to remove a portion of the substrate from a second surface of the substrate and thereby form a plurality of vias in the substrate, wherein the second surface is opposite to the first surface. A second anisotropic etching process is performed to remove another portion of the substrate from the second surface of the substrate and thereby form a cavity in the substrate, wherein the remaining vias are located below the cavity. An isotropic etching process is performed to the cavity and the remaining vias.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: March 17, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Meng-Jia Lin, Chang-Sheng Hsu, Kuo-Hsiung Huang, Wei-Hua Fang, Shou-Wei Hsieh, Te-Yuan Wu, Chia-Huei Lin
  • Patent number: 8982440
    Abstract: MEMS and fabrication techniques for positioning the center of mass of released structures in MEMS are provided. A MEMS device includes a substrate and a released structure connected to the substrate via a flexure. The released structure includes a frame rotatable with respect to the substrate, and an elongate first member having a longitudinal axis extending perpendicularly from an undersurface of the frame and a free end remote from the frame. A recess is formed in an end face of the free end. The recess has a longitudinal axis substantially parallel to the longitudinal axis of the first member and a transverse area smaller than an area of the end face.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: March 17, 2015
    Assignee: CALIENT Technologies, Inc.
    Inventor: Chris Seung Bok Lee
  • Patent number: 8975107
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: March 10, 2015
    Assignee: Infineon Techologies AG
    Inventors: Alfons Dehe, Stefan Barzen, Wolfgang Friza, Wolfgang Klein
  • Patent number: 8975671
    Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: March 10, 2015
    Assignee: ELMOS Semiconductor AG
    Inventor: Arnd Ten Have
  • Patent number: 8975669
    Abstract: A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: March 10, 2015
    Assignee: Robert Bosch GmbH
    Inventors: Oleg Jakovlev, Alexander Buhmann, Ando Feyh
  • Patent number: 8975714
    Abstract: A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: March 10, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Goro Nakatani
  • Patent number: 8969977
    Abstract: The invention provides a flow sensor structure for sealing the surface of an electric control circuit and a part of a semiconductor device via a manufacturing method capable of preventing occurrence of flash or chip crack when clamping the semiconductor device via a mold. The invention provides a flow sensor structure comprising a semiconductor device having an air flow sensing unit and a diaphragm formed thereto, and a board or a lead frame having an electric control circuit for controlling the semiconductor device disposed thereto, wherein a surface of the electric control circuit and a part of a surface of the semiconductor device is covered with resin while having the air flow sensing unit portion exposed.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: March 3, 2015
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Tsutomu Kono, Yuuki Okamoto, Takeshi Morino, Keiji Hanzawa
  • Patent number: 8969978
    Abstract: A pressure sensor system comprising a pressure sensor chip is disclosed. The pressure sensor chip comprises a sensing side where pressure sensing is performed and one or more interconnections where electrical connections are made at the other side of the chip. The pressure sensor comprising an integrated circuit (1) forming a substrate, the substrate comprising a membrane shaped portion adapted for being exposed to the pressure, the integrated circuit (1) comprising both pressure signal sensing components and pressure signal processing components.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: March 3, 2015
    Assignee: Melexis Technologies NV
    Inventors: Laurent Otte, Appolonius Jacobus Van Der Wiel
  • Patent number: 8963262
    Abstract: The disclosure is generally directed to fabrication steps, and operation principles for microelectromechanical (MEMS) transducers. In one embodiment, the disclosure relates to a texture morphing device. The texture morphing device includes: a plurality of supports arranged on a substrate to support a deformable mirror; an ITO layer; and a Distributed Bragg Reflector (DBR) layer. A pair of adjacent supports form a cavity with the ITO layer and the deformable mirror. When the height of the cavity changes responsive to an external pressure, the internal reflection within the cavity is changed. The change in the height of the cavity causes the exterior texture to morph. Similar principles are disclosed for constructing sensor and actuators.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: February 24, 2015
    Assignee: Massachusettes Institute of Technology
    Inventors: Vladimir Bulovic, Corinne E. Packard, Vanessa C. Wood, Apoorva Murarka, Gleb Akselrod
  • Patent number: 8963120
    Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: February 24, 2015
    Assignees: OSRAM Opto Semiconductors GmbH, The University Court of the University of St. Andrews
    Inventors: Krister Bergenek, Christopher Wiesmann, Thomas F. Krauss
  • Patent number: 8955212
    Abstract: A micro-electro-mechanical microphone and manufacturing method thereof are provided. The micro-electro-mechanical microphone includes a diaphragm, which is formed on a surface of one side of a semiconductor substrate, exposed to the outside surroundings, and can vibrate freely under the pressure generated by sound waves; an electrode plate with air holes, which is under the diaphragm; an isolation structure for fixing the diaphragm and the electrode plate; an air gap cavity between the diaphragm and the electrode plate, and a back cavity under the electrode plate and in the semiconductor substrate; and a second cavity formed on the surface of the same side of the semiconductor substrate and in an open manner The air gap cavity is connected with the back cavity through the air holes of the electrode plate The back cavity is connected with the second cavity through an air groove formed in the semiconductor substrate.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: February 17, 2015
    Assignee: Lexvu Opto Microelectronics Technology (Shanghai) Ltd
    Inventors: Jianhong Mao, Deming Tang
  • Patent number: 8957485
    Abstract: Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a ‘split layer’ cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: February 17, 2015
    Assignee: Cavendish Kinetics, Ltd.
    Inventor: Joseph Damian Gordon Lacey
  • Patent number: 8952468
    Abstract: In an acoustic sensor, a conductive vibrating membrane and a fixed electrode plate are disposed above a silicon substrate with an air gap provided therebetween, and the substrate has an impurity added to a surface thereof. A microphone includes an acoustic transducer; and an acquiring section that acquires a change in pressure as detected by the acoustic transducer. A method for manufacturing an acoustic transducer including a semiconductor substrate, a vibrating membrane, which is conductive, and a fixed electrode plate and detecting a pressure according to a change in capacitance between the vibrating membrane and the fixed electrode plate, the method includes an impurity adding step of adding an impurity to a surface of the semiconductor substrate; and a forming step of forming the vibrating membrane and the fixed electrode plate above the semiconductor substrate to which the impurity has been added.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: February 10, 2015
    Assignees: OMRON Corporation, STMicroelectronics Srl
    Inventors: Koichi Ishimoto, Yoshitaka Tatara, Shin Inuzuka, Sebastiano Conti
  • Patent number: 8952463
    Abstract: A MEMS (Micro-Electro-Mechanical-System) structure preventing stiction, comprising: a substrate; and at least two structural layers above the substrate, wherein at least one of the at least two structural layers is a movable part, and anyone or more of the at least two structural layers is provided with at least one bump to prevent the movable part from sticking to another portion of the MEMS structure.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: February 10, 2015
    Assignee: Pixart Imaging Incorporation
    Inventors: Chuan-Wei Wang, Sheng-Ta Lee, Hsin-Hui Hsu
  • Patent number: 8940570
    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.
    Type: Grant
    Filed: January 3, 2012
    Date of Patent: January 27, 2015
    Assignee: International Business Machines Corporation
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 8941229
    Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: January 27, 2015
    Assignee: DENSO CORPORATION
    Inventors: Masaya Tanaka, Tetsuo Fujii
  • Patent number: 8941194
    Abstract: A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: January 27, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Wai Yew Lo, Fui Yee Lim
  • Patent number: 8941193
    Abstract: A simple and cost-effective manufacturing method for hybrid integrated components including at least one MEMS element, a cap for the micromechanical structure of the MEMS element, and at least one ASIC substrate, using which a high degree of miniaturization may be achieved. The micromechanical structure of the MEMS element and the cap are manufactured in a layered structure, proceeding from a shared semiconductor substrate, by applying at least one cap layer to a first surface of the semiconductor substrate, and by processing and structuring the semiconductor substrate proceeding from its other second surface, to produce and expose the micromechanical MEMS structure. The semiconductor substrate is then mounted with the MEMS-structured second surface on the ASIC substrate.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: January 27, 2015
    Assignee: Robert Bosch GmbH
    Inventors: Jens Frey, Frank Fischer
  • Patent number: 8941191
    Abstract: A radio frequency microelectromechanical (RF MEMS) device can comprise an actuation p-n junction and a sensing p-n junction formed within a semiconductor substrate. The RF MEMS device can be configured to operate in a mode in which an excitation voltage is applied across the actuation p-n junction varying a non-mobile charge within the actuation p-n junction to modulate an electric field acting upon dopant ions and creating electrostatic forces. The electrostatic forces can create a mechanical motion within the actuation p-n junction. The mechanical motion can modulate a depletion capacitance of the sensing p-n junction, thereby creating a motional current. At least one of the p-n junctions can be located at an optimal location to maximize the efficiency of the RF MEMS device at high resonant frequencies.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: January 27, 2015
    Assignee: Cornell University
    Inventors: Eugene Hwang, Sunil Ashok Bhave
  • Patent number: 8921957
    Abstract: A MEMS microphone. The MEMS microphone includes a back plate, a membrane, a support structure, a substrate, and an overtravel stop. The membrane is coupled to the back plate. The support structure includes a support structure opening and a first side of the support structure is coupled to a second side of the back plate. The substrate includes a substrate opening and a first side of the substrate is coupled to a second side of the support structure. The overtravel stop limits a movement of the membrane away from the back plate and includes at least one of an overtravel stop structure coupled to the substrate, an overtravel stop structure formed as part of a carrier chip, and an overtravel stop structure formed as part of the support structure in the support structure opening.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: December 30, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Yujie Zhang, Andrew J. Doller, Thomas Buck
  • Patent number: 8921145
    Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 30, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pao Shu, Kelvin Tai, Calvin Hung, Benior Chen
  • Patent number: 8921953
    Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: December 30, 2014
    Assignee: Cavendish Kinetics, Inc.
    Inventors: Mickael Renault, Joseph Damian Gordon Lacey, Vikram Joshi, Thomas L. Maguire
  • Patent number: 8916942
    Abstract: The invention relates to temperature compensated micro-electro-mechanical (MEMS) resonators (300) preferably made of silicon. Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentration of the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: December 23, 2014
    Assignee: Valtion Teknillinen Tutkimuskeskus
    Inventors: Tuomas Pensala, Antti Jaakkola
  • Patent number: 8916943
    Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: December 23, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Patent number: 8912652
    Abstract: Embodiments relate to a method for manufacturing a semiconductor device including at least one of: (1) Forming a lower electrode pattern on a substrate. (2) Forming an etch stop film on/over the lower electrode pattern. (3) Forming a first interlayer insulating layer on/over the etch stop film. (4) Forming an upper electrode pattern on/over the first interlayer insulating layer. (5) Forming a second interlayer insulating layer on/over the upper electrode pattern. (6) Forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern which passes through the second interlayer insulating layer and the first interlayer insulating layer. (7) Forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer. (8) Forming a contact ball in the cavity.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: December 16, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Ki Wan Bang
  • Patent number: 8907434
    Abstract: A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: December 9, 2014
    Assignee: Lexvu Opto Microelectronics Technology (Shanghai) Ltd.
    Inventors: Zhiwei Wang, Deming Tang, Lei Zhang, Jianhong Mao, Fengqin Han
  • Patent number: 8901681
    Abstract: A pedestal projection having reduced cross-sectional area secures a MEMs device to a housing surface in a manner which reduces strain on the MEMS die due to differences in coefficients of thermal expansion while more evenly distributing to the MEMS sensor any external forces mechanically coupled through the housing structure. The pedestal projection may be integrally formed with a surface on either MEMS die or housing member and is axially aligned with the structure which anchors the MEMS sensor to the MEMS die.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 2, 2014
    Assignee: Qualtre, Inc.
    Inventor: Michael John Foster
  • Patent number: 8878313
    Abstract: A pressure sensor has a sensor body at least partly formed with an electrically insulating material, particularly a ceramic material, defining a cavity facing on which is a diaphragm provided with an electric detector element, configured for detecting a bending of the diaphragm. The sensor body supports a circuit arrangement, including, a plurality of circuit components, among which is an integrated circuit, for treating a signal generated by the detection element. The circuit arrangement includes tracks made of electrically conductive material directly deposited on a surface of the sensor body made of electrically insulating material. The integrated circuit is made up of a die made of semiconductor material directly bonded onto the surface of the sensor body and the die is connected to respective tracks by means of wire bonding, i.e. by means of thin connecting wires made of electrically conductive material.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: November 4, 2014
    Assignee: Metallux SA
    Inventor: Luca Salmaso
  • Patent number: 8878312
    Abstract: An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: November 4, 2014
    Assignee: Taiwan Semiconductor manufacturing Company, Ltd.
    Inventors: Chia-Ming Hung, Hung-Sen Wang, Hsiang-Fu Chen, Te-Hsi Lee, Alex Kalnitsky, Wen-Chuan Tai, Kuei-Sung Chang, Yi Heng Tsai
  • Patent number: 8878314
    Abstract: A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: November 4, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Andrew B. Graham, Gary Yama, Gary O'Brien
  • Patent number: 8878790
    Abstract: A microelectronic pressure sensor comprises a MOSFET transistor adapted with a mobile gate and a cavity between the mobile gate and a substrate. The sensor includes a gate actuator configured to move mobile gate in response to a pressure being exercised. A fingerprint recognition system includes a matrix of such sensors.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: November 4, 2014
    Assignee: STMicroelectronics S.A.
    Inventor: Nicolas Abele
  • Patent number: 8872240
    Abstract: The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: October 28, 2014
    Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
    Inventors: Mihai Adrian Ionescu, Daniel Grogg
  • Patent number: 8872289
    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: October 28, 2014
    Assignee: International Business Machines Corporation
    Inventors: Brian M. Czabaj, David A. DeMuynck, Anthony K. Stamper
  • Patent number: 8872187
    Abstract: The invention relates to a membrane. Partly permeable membranes often have holes or perforations having a specific diameter to allow substances having a smaller particle diameter to pass through, but to hold back substances having a larger particle diameter. Such membranes are subject to wear primarily at the holes, i.e. cracks form which grow through the membrane proceeding from a hole. Particularly in the case of micromechanical membranes having holes having a small diameter in the range of 1 ?m or less, it is very difficult to detect the state of the membrane, in particular whether the latter has cracks. Membranes having cracks can then undesirably allow passage even of those particles which should actually be held back. In medical or hygienic applications, the function can then be impaired.
    Type: Grant
    Filed: November 22, 2011
    Date of Patent: October 28, 2014
    Assignee: Airbus Operations GmbH
    Inventors: Alois Friedberger, Andreas Helwig, Gerhard Mueller
  • Patent number: 8872290
    Abstract: A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: October 28, 2014
    Assignee: NXP B.V.
    Inventors: Romano Hoofman, Remco Henricus Wilhelmus Pijnenbrug, Youri Victorovitch Ponomarev
  • Patent number: 8871550
    Abstract: A method for processing a wafer having microelectromechanical system structures at the first main surface includes applying a masking material at the second main surface and structuring the masking material to obtain a plurality of masked areas and a plurality of unmasked areas at the second main surface. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas to form a plurality of recesses. The masking material is then removed at least at some of the masked areas to obtain previously masked areas. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas and the previously masked areas to increase a depth of the recesses and reduce a thickness of the wafer at the previously masked areas.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: October 28, 2014
    Assignee: Infineon Technologies AG
    Inventors: Thomas Grille, Ursula Hedenig, Martin Zgaga, Daniel Maurer