Abstract: The invention relates to a membrane. Partly permeable membranes often have holes or perforations having a specific diameter to allow substances having a smaller particle diameter to pass through, but to hold back substances having a larger particle diameter. Such membranes are subject to wear primarily at the holes, i.e. cracks form which grow through the membrane proceeding from a hole. Particularly in the case of micromechanical membranes having holes having a small diameter in the range of 1 ?m or less, it is very difficult to detect the state of the membrane, in particular whether the latter has cracks. Membranes having cracks can then undesirably allow passage even of those particles which should actually be held back. In medical or hygienic applications, the function can then be impaired.

Abstract: A method for processing a wafer having microelectromechanical system structures at the first main surface includes applying a masking material at the second main surface and structuring the masking material to obtain a plurality of masked areas and a plurality of unmasked areas at the second main surface. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas to form a plurality of recesses. The masking material is then removed at least at some of the masked areas to obtain previously masked areas. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas and the previously masked areas to increase a depth of the recesses and reduce a thickness of the wafer at the previously masked areas.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

Abstract: Hybrid integrated components including an MEMS element and an ASIC element are described, whose capacitor system allows both signal detection with comparatively high sensitivity and sensitive activation of the micromechanical structure of the MEMS element. The hybrid integrated component includes an MEMS element having a micromechanical structure which extends over the entire thickness of the MEMS substrate. At least one structural element of this micromechanical structure is deflectable and is operationally linked to at least one capacitor system, which includes at least one movable electrode and at least one stationary electrode. Furthermore, the component includes an ASIC element having at least one electrode of the capacitor system. The MEMS element is mounted on the ASIC element, so that there is a gap between the micromechanical structure and the surface of the ASIC element.

Abstract: A package structure having at least an MEMS element is provided, including a chip having electrical connecting pads and the MEMS element; a lid disposed on the chip to cover the MEMS element and having a metal layer provided thereon; first sub-bonding wires electrically connecting to the electrical connecting pads; second sub-bonding wires electrically connecting to the metal layer; an encapsulant disposed on the chip, wherein the top ends of the first and second sub-bonding wires are exposed from the encapsulant; and metallic traces disposed on the encapsulant and electrically connecting to the first sub-bonding wires. The package structure advantageously features reduced size, relatively low costs, diverse bump locations, and an enhanced EMI shielding effect.

Abstract: The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same.

Abstract: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each include a first semiconductor and a first dielectric layer. The MEMS device can also include a second beam suspended relative to the substrate surface. The second beam can include a second semiconductor and a second dielectric layer to promote curvature of the second beam. The MEMS device can also include a third beam suspended relative to the substrate surface. The third beam consists essentially of a first material. The second beam is configured to move relative to the third beam in response to an acceleration along an axis perpendicular to the surface of the substrate.

Abstract: Electronic device including a substrate provided with at least one passing opening, a MEMS device with a differential sensor provided with a first and a second surface having at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof. The first surface of the MEMS device leaves the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate.

Abstract: A CMOS compatible MEMS microphone is disclosed. In one embodiment, the microphone comprises an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portion thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap provided between the diaphragm and the microphone backplate.

Abstract: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.

Abstract: A sensor element includes: a first substrate in which a diaphragm is configured on a main surface; a second substrate which is provided on the side opposite to the diaphragm of the first substrate; a cavity which is provided just below the diaphragm of the first substrate; a bonding position which is provided at a bonding position between the first substrate and the second substrate for airtight sealing of the cavity; and a bump portion which is provided at the fitting portion, and protects a fitted state between the first substrate and the second substrate.

Abstract: In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.

Abstract: A device includes a micro-electro-mechanical system (MEMS) device, which includes a movable element and a fixed element. The movable element and the fixed element form two capacitor plates of a capacitor, with an air-gap between the movable element and the fixed element acting as a capacitor insulator of the capacitor. At least one of the movable element and the fixed element has a rugged surface.

Abstract: A sensor manufacturing method and a microphone structure produced by using the same. Wherein, thermal oxidation method is used to form a sacrifice layer of an insulation layer on a silicon-on-insulator (SOI) substrate or a silicon substrate, to fill patterned via in said substrate. Next, form a conduction wiring layer on the insulation layer. Since the conduction wiring layer is provided with holes, thus etching gas can be led in through said hole, to remove filling in the patterned via, to obtain an MEMS sensor. Or after etching of the conduction wiring layer, deep reactive-ion etching is used to etch the silicon substrate into patterned via, to connect the substrate electrically to a circuit chip. The manufacturing process is simple and the technology is stable and mature, thus the conduction wiring layer and the insulation layer are used to realize electrical isolation.

Abstract: A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.

Abstract: A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the opening to form a transparent or substantially transparent window. The method further includes tuning a thickness of the sacrificial cavity material based on measurements obtained through the transparent or substantially transparent window.

Abstract: A microstructure device package includes a package housing configured and adapted to house a microstructure device. A bracket is housed in the package housing. The bracket includes a bracket base with a first bracket arm and a second bracket arm each extending from the bracket base. A channel is defined between the first and second bracket arms. The first bracket aim defines a first mounting surface facing inward with respect to the channel. The second bracket aim defines a second mounting surface facing outward with respect to the channel. The second mounting surface of the bracket is mounted to the package housing. A microstructure device is mounted to the first mounting surface in the channel. The bracket is configured and adapted to isolate the microstructure device from packaging stress imparted from the package housing on the second mounting surface of the bracket.

Abstract: A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.

Abstract: A method of packaging a pressure sensor die includes providing a lead frame having a die pad and lead fingers that surround the die pad. A tape is attached to a first side of the lead frame. A pressure sensor die is attached to the die pad on a second side of the lead frame and bond pads of the die are connected to the lead fingers. An encapsulant is dispensed onto the second side of the lead frame and covers the lead fingers and the electrical connections thereto. A gel is dispensed onto a top surface of the die and covers the die bond pads and the electrical connections thereto. A lid is attached to the lead frame and covers the die and the gel, and sides of the lid penetrate the encapsulant.

Abstract: Electronic device including a substrate provided with at least one passing opening, a MEMS device with a differential sensor provided with a first and a second surface having at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof. The first surface of the MEMS device leaving the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate.

Abstract: A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Abstract: Integrated devices and methods for packaging the same can include an external housing, an internal housing positioned within the external housing, and an external cavity formed between the external housing and the internal housing. An integrated device die can be positioned within the external cavity in fluid communication with an internal cavity formed by the internal lid. An air way can extend through the external cavity to the internal cavity, and can further extend from the internal cavity to the external cavity. The air way can provide fluid communication between the package exterior and the integrated device die, while reducing contamination of the integrated device die.

Abstract: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.

Abstract: This invention discloses and claims a cost-effective, wafer-level package process for microelectromechanical devices (MEMS). Specifically, the movable part of MEMS device is encapsulated and protected while in wafer form so that commodity, lead-frame packaging can be used. An overcoat polymer, such as, epoxycyclohexyl polyhedral oligomeric silsesquioxanes (EPOSS) has been used as a mask material to pattern the sacrificial polymer as well as overcoat the air-cavity. The resulting air-cavities are clean, debris-free, and robust. The cavities have substantial strength to withstand molding pressures during lead-frame packaging of the MEMS devices. A wide range of cavities from 20 ?m×400 ?m to 300 ?m×400 ?m have been fabricated and shown to be mechanically stable. These could potentially house MEMS devices over a wide range of sizes. The strength of the cavities has been investigated using nano-indentation and modeled using analytical and finite element techniques.

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Abstract: Forming an alignment mark on a semiconductor structure using an optical lithography to form a metal alignment mark on a substrate of the structure, using the formed metal alignment mark to form a first feature of a semiconductor device being formed on the substrate using optical lithography, and using the formed metal alignment mark to form a second, different feature for the semiconductor using electron beam lithography. In one embodiment, the first feature is an ohmic contact, the second feature is a Schottky contact, the metal alignment mark is a refractory metal or a refractory metal compound having an atomic weight greater than 60 such as TaN and the semiconductor device is a GaN semiconductor device. A semiconductor structure having a metal alignment mark on a zero layer of the structure, the metal alignment mark is a TaN and the semiconductor is GaN.

Abstract: The capacitive pressure sensor comprises: a substrate functioning as a lower electrode; a first insulating film formed on the substrate; a cavity formed on the first insulating film; a second insulating film formed on the first insulating film to have openings communicated with the cavity and to cover the cavity; a sealing film formed of a conductive material to seal the openings and to extend partially into the cavity through the openings; and an upper electrode formed on the second insulating film to be electrically separated from the sealing film and to overlap the cavity.

Abstract: Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

Abstract: An electronic component includes: a semiconductor element including a circuit; a vibration element; a first electrode arranged on a first surface of the semiconductor element and connected to the circuit and the vibration element arranged on the first surface side; a second electrode arranged on the first surface; a first wiring board including a first wire connected to the second electrode; and a second wiring board including a second wire to which the first wire is connected. At least a part of an inner side region of an outer contour of the vibration element is arranged to overlap the second electrode in plan view facing the first surface.

Abstract: A capacitive sensor is configured for collapsed mode, e.g. for measuring sound or pressure, wherein the moveable element is partitioned into smaller sections. The capacitive sensor provides increased signal to noise ratio.

Abstract: Methods and systems for packaging MEMS devices such as interferometric modulator arrays are disclosed. One embodiment of a MEMS device package structure includes a seal with a chemically reactant getter. Another embodiment of a MEMS device package comprises a primary seal with a getter, and a secondary seal proximate an outer periphery of the primary seal. Yet another embodiment of a MEMS device package comprises a getter positioned inside the MEMS device package and proximate an inner periphery of the package seal.

Abstract: The sensor assembly comprises a substrate (1), such as a flexible printed circuit board, and a sensor chip (2) flip-chip mounted to the substrate (1), with a first side (3) of the sensor chip (2) facing the substrate (1). A sensing area (4) and contact pads (5) are integrated on the first side (3) of the sensor chip (2). Underfill (18) and/or solder flux is arranged between the sensor chip (2) and the substrate (1). The sensor chip (2) extends over an edge (12) of the substrate (1), with the edge (12) of the substrate (1) extending between the contact pads (5) and the sensing area (4) over the whole sensor chip (2). A dam (16) can be provided along the edge (12) of the substrate (1) for even better separation of the underfill (18) and the sensing area (4). This de sign allows for a simple alignment of the sensor chip on the substrate (1) and prevents underfill (18) from covering the sensing area (4).

Abstract: A semiconductor device according to the present invention includes: a semiconductor substrate; a source region formed in a top layer portion of the semiconductor substrate; a drain region formed in the top layer portion of the semiconductor substrate and spaced apart from the source region; a gate electrode formed on the semiconductor substrate and opposing to an interval between the source region and the drain region; a wiring formed on the semiconductor substrate and connected to the source region, the drain region, or the gate electrode; and a MEMS sensor disposed on the semiconductor substrate. The MEMS sensor includes: a thin film first electrode made of the same material as the gate electrode and formed in the same layer as the gate electrode; and a second electrode made of the same material as the wiring, formed in the same layer as the wiring, and spaced apart from the first electrode at a side opposite to the semiconductor substrate side of the first electrode.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

Abstract: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.

Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.

Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.

Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: A multi-layer stacked micro-electro-mechanical (MEMS) device that acts as a capacitive micromachined ultrasonic transducer (CMUT) with a hermetically sealed device cavity formed by a wafer bonding process with semiconductor and insulator layers. The CMUT design uses a doped Si SOI and wafer bonding fabrication method, and is composed of semiconductor layers, insulator layers, and metal layers. Conventional doped silicon may be used for electrode layers. Other suitable semi-conductor materials such as silicon carbide may be used for the electrode layers. The insulator may be silicon oxide, silicon nitride or other suitable dielectric.

Abstract: A three-dimensional printing technique can be used to form a microphone package. The microphone package can include a housing having a first side and a second side opposite the first side. A first electrical lead can be formed on an outer surface on the first side of the housing. A second electrical lead can be formed on an outer surface on the second side of the housing. The first electrical lead and the second electrical lead may be electrically shorted to one another. Further, vertical and horizontal conductors can be monolithically integrated within the housing.

Abstract: A through-substrate via (TSV)-MEMS combination includes a TSV die including a substrate and a plurality of TSVs which extend of a full thickness of the substrate. The TSV die includes a top side surface including circuitry and top side bonding pads thereon, a bottom side surface including bottom side bonding features thereon, and a through-hole through the full thickness of the substrate. A microelectromechanical systems (MEMS) die having a floating sensing structure including solder balls thereon is bound to the top side bonding pads or bottom side bonding features of the TSV die. A layer of adhesive material is surrounding the solder balls, which can provide a sealant ring for the TSV-MEMS bonds.

Abstract: A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.

Abstract: A pressure sensor includes a first housing having a cavity. The pressure sensor further includes a pressure sensing device attached to a bottom of the cavity. The pressure sensor further includes a layer of gel over the pressure sensing device. The pressure sensor further includes a baffle in contact with the gel to reduce movement of the gel.

Abstract: An encapsulation structure for silicon pressure sensor including a case and a stem is proposed. The case and the stem are connected with a cavity therebetween. A sealing pad and a pressure sensitive silicon chip are provided in the said cavity. The sealing pad is placed under the silicon chip and the silicon chip is connected to the external circuit through the bonding pad. This invention, with the anti-overloading ability, simplifies the encapsulation structure and manufacturing process which greatly reduces the cost of material and process.

Abstract: The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

Abstract: Thermally-induced stress on a silicon micro-electromechanical pressure transducer (MEMS sensor) is reduced by attaching the MEMS sensor to a plastic filled with low CTE fillers that lowers the plastic's coefficient of thermal expansion (CTE) to be closer to that of silicon. The MEMS sensor is attached to the housing using an epoxy adhesive/silica filler mixture, which when cured has a CTE between about ten PPM/° C. and about thirty PPM/° C. in order to match the housing CTE. The adhesive also has a glass transition temperature (Tg) above the operating temperature range. This design provides good sealing of the sensor and stable sensor outputs.