Abstract: A package structure includes: a substrate having a plurality of first conductive pads and a plurality of second conductive pads; an MEMS element disposed on the substrate; a cover member disposed on the MEMS element and having a metal layer formed thereon; a plurality of bonding wires electrically connected to the MEMS element and the second conductive pads of the substrate; a plurality of first wire segments, each having one end electrically connected to a corresponding one of the first conductive pads; and an encapsulant formed on the substrate and encapsulating the MEMS element, the cover member, the first wire segments and the bonding wires, wherein the other end of each of the first wire segments is exposed from the encapsulant. Compared with the prior art, the package structure of the present invention has improved overall yield and functionality.

Abstract: A MEMS microphone module includes a first circuit board and a second circuit board attached to the first circuit board. A MEMS chip and an ASIC chip are respectively received in one of two concavities of the first circuit board. A first ground layer of the first circuit board and a second ground layer of the second circuit board are electrically coupled to each other to define a ground shielding structure. By this way, an EMI shielding can be applied by the ground shielding structure to the MEMS chip and the ASIC chip.

Abstract: A capped micromachined accelerometer with a Q-factor of less than 2.0 is fabricated without encapsulating a high-viscosity gas with the movable mass of the micromachined accelerometer by providing small gaps between the movable mass and the substrate, and between the movable mass and the cap. The cap may be an silicon cap, and may be an ASIC smart cap.

Abstract: A method for processing a wafer having microelectromechanical system structures at the first main surface includes applying a masking material at the second main surface and structuring the masking material to obtain a plurality of masked areas and a plurality of unmasked areas at the second main surface. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas to form a plurality of recesses. The masking material is then removed at least at some of the masked areas to obtain previously masked areas. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas and the previously masked areas to increase a depth of the recesses and reduce a thickness of the wafer at the previously masked areas.

Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method comprises forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method comprises forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method comprises forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method comprises forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

Abstract: Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: A MEMS device comprises a substrate, an island-shaped first insulating layer formed on the substrate, a second insulating film formed on the top and side surfaces of the first insulating layer and the top surface of the substrate, and having a thickness smaller than that of the first insulating layer, a metal layer formed on the second insulating film in an island-shaped region where the first insulating layer is formed, and a MEMS system element formed on the metal layer.

Abstract: The present invention relates to a method of forming a micro cavity having a micro electrical mechanical system (MEMS) in a process, such as a CMOS process. MEMS resonators are being intensively studied in many research groups and some first products have recently been released. This type of device offers a high Q-factor, small size, high level of integration and potentially low cost. These devices are expected to replace bulky quartz crystals in high-precision oscillators and may also be used as RF filters. The oscillators can be used in time-keeping and frequency reference applications such as RF modules in mobile phones, devices containing blue-tooth modules and other digital and telecommunication devices.

Abstract: A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.

Abstract: An object of the present invention is to enhance the reliability of an MEMS sensor formed on a semiconductor integrated circuit device. To achieve this object, a semiconductor device of the present invention comprises: a semiconductor integrated circuit device; a lower passivation film of silicon nitride, etc. . . . formed on the semiconductor integrated circuit device and having high moisture resistance and high chemical resistance; a MEMS portion formed on the lower passivation film and including a cavity 12; and an upper passivation film 11 formed on the top surface of the MEMS portion such that the MEMS portion is hermetically sealed by the upper and lower passivation films.

Abstract: The invention relates to the creation of a housing for an integrated circuit which makes it possible to detect physical ingression into said housing. The invention applies in particular to the protection of secrets which may possibly be contained in said integrated circuit, in the event of physical attack, for example by destroying the secrets contained in an integrated circuit in the event of ingression into the housing thereof.

Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.

Abstract: A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

Abstract: A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

Abstract: A packaged MEMS device and a method of calibrating a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device comprises a carrier, a MEMS device disposed on the substrate, a signal processing device disposed on the carrier, a validation circuit disposed on the carrier; and an encapsulation disposed on the carrier, wherein the encapsulation encapsulates the MEMS device, the signal processing device and the memory element.

Abstract: A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane.

Abstract: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

Abstract: Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

Abstract: A micromechanical systems (MEMs) pressure sensor includes a semiconductor substrate having a deep well located within a first surface and a cavity located within a second, opposing surface. The semiconductor substrate has a first doping type. The deep well has a second doping type, with a gradient doping profile, thereby forming a PN junction within the substrate. The cavity forms a diaphragm, which is a substrate section that is thinner than the surrounding substrate sections, that comprises the deep well. One or more pizeoresistor elements are located within the deep well. The piezoresistors are sensitive to deformations, such as bending, in the diaphragm caused by changes in the pressure of the cavity.

Abstract: Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity.

Abstract: A micromechanical component having a conductive substrate, a first conductive layer provided above the substrate and that forms, above a cavity provided in the substrate, an elastically deflectable diaphragm region of monocrystalline silicon and an adjacent peripheral region, a circuit trace level provided above the first conductive layer in a manner that is electrically insulated from the first conductive layer, the circuit trace level having above the diaphragm region a first electrode region and having above the peripheral region a first connection region electrically connected to the same, and a second conductive layer that is provided above the circuit trace level, the second conductive layer having above the diaphragm region a second electrode region that is electrically insulated from the first electrode region, and having above the peripheral region a second connection region electrically insulated from the second electrode region and electrically connected to the first connection region.

Abstract: A method for producing a micromechanical and/or nanomechanical device includes partial etching of at least one sacrificial layer arranged between a first layer and a substrate, forming at least one cavity in which is arranged at least one portion of the sacrificial layer in contact with the first layer and/or the substrate. The method also includes chemical transformation of at least one wall of the first layer and/or the substrate in the cavity, delimiting at least one stop in the first layer and/or the substrate at the level of the portion of the sacrificial layer. The portion of the sacrificial layer and the chemically transformed wall of the first layer and/or the substrate is also eliminated.

Abstract: A MEMS device and a method of making a MEMS device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a counter electrode, wherein the moveable electrode and the counter electrode are mechanically connected to the substrate. The movable electrode is configured to stiffen an inner region of the movable membrane.

Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

Abstract: A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.

Abstract: A diaphragm of an MEMS electroacoustic transducer including a first axis-symmetrical pattern layer is provided. Because the layout of the first axis-symmetrical pattern layer can match the pattern of the sound wave, the vibration uniformity of the diaphragm can be improved.

Abstract: A semiconductor physical quantity sensor includes a sensor chip, a support member for fixing the sensor chip to a fixing position and an adhesive bonding the sensor chip with the support member. The sensor chip includes a semiconductor substrate and a chip base supporting the semiconductor substrate. The semiconductor substrate is provided with a sensing portion for detecting a physical quantity. The chip base is bonded with the support member through the adhesive. The adhesive is provided by a mixture of an adhesive base material mainly made of a resin and a granular material mainly made of a cross-linked resin.

Abstract: An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free.

Abstract: An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.

Abstract: A high-frequency capacitive micromachined ultrasonic transducer (CMUT) has a silicon membrane and an overlying metal silicide layer that together form a conductive structure which can vibrate over a cavity. The CMUT also has a metal structure that touches a group of conductive structures. The metal structure has an opening that extends completely through the metal structure to expose the conductive structure.

Abstract: A high-frequency capacitive micromachined ultrasonic transducer (CMUT) has a silicon membrane and an overlying metal silicide layer that together form a conductive structure which can vibrate over a cavity. The CMUT also has a metal structure that touches a group of conductive structures. The metal structure has an opening that extends completely through the metal structure to expose the conductive structure.

Abstract: A diaphragm for sensing sound pressure faces a back plate including a plate portion and a fixed electrode film to form a capacitance type acoustic sensor. The back plate is opened with acoustic holes for passing vibration, and is arranged with a plurality of stoppers in a projecting manner on a surface facing the diaphragm. The stopper arranged in an outer peripheral area of the back plate has a small diameter, and the stopper arranged in an internal area has a large diameter. Thus, sticking of the diaphragm is prevented, and the diaphragm is less likely to break by impact when the sensor is dropped.

Abstract: A method and structure for uncovering captive devices in a bonded wafer assembly comprising a top wafer and a bottom wafer. One embodiment method includes forming a plurality of cuts in the top wafer and removing a segment of the top wafer defined by the plurality of cuts. The bottom wafer remains unsingulated after the removal of the segment.

Abstract: A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer.

Abstract: A method for attaching a first carrier device to a second carrier device includes forming at least one first bond layer and/or solder layer on a first exterior of the first carrier device, a partial surface being framed by the at least one first bond layer and/or solder layer, and placing the first carrier device on the second carrier device and fixedly bonding or soldering the first carrier device to the second carrier device. The at least one first bond layer and/or solder layer includes a first cover area which is larger than a first contact area.

Abstract: First and second sacrificial materials are deposited on a substrate. The first and second patterns are respectively formed in the first and second sacrificial materials. The first pattern made from the first sacrificial material is arranged on the second pattern made from a second sacrificial material. The first pattern leaves an area of predefined width free on the periphery of a top surface of the second pattern. The active layer covers at least the whole of the side walls of the first and second patterns and said predefined area of the second pattern. The active area is patterned so as to allow access to the first sacrificial material. The first and second sacrificial materials are selectively removed forming a mobile structure comprising a free area secured to the substrate by a securing area.

Abstract: A MEMS device includes a substrate, an insulating layer section formed above the substrate and having a cavity, a functional element contained in the cavity, and a fuse element contained in the cavity and electrically connected with the functional element. It is preferable that the fuse element is spaced apart from the substrate.

Abstract: An embedded micro-electro-mechanical system (MEMS) (100) comprising a semiconductor chip (101) embedded in an insulating board (120), the chip having a cavity (102) including a radiation sensor MEMS (105), the opening (104) of the cavity at the chip surface covered by a plate (110) transmissive to the radiation (150) sensed by the MEMS. The plate surface remote from the cavity having a bare central area, to be exposed to the radiation sensed by the MEMS in the cavity, and a peripheral area covered by a metal film (111) touching the plate surface and a layer (112) of adhesive stacked on the metal film.

Abstract: A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.

Abstract: A fabrication method of a silicon condenser microphone having an additional back chamber. The method includes applying an adhesive on a substrate and mounting a chamber container thereon by using a mounter; curing the adhesive holding the chamber container; applying an adhesive on the chamber container and mounting a micro electro mechanical system (MEMS) chip thereon by using a mounter; curing the adhesive holding the MEMS chip; and attaching the substrate on which devices are mounted to a case, wherein a back chamber formed by the chamber container is added to a back chamber of the MEMS chip. Therefore, a silicon condenser microphone fabricated by using the method may have improved sensitivity by increasing the small back chamber space of the a micro electro mechanical system (MEMS) chip itself and reduced noise including total harmonic distortion (THD).

Abstract: A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode.

Abstract: The present disclosure relates to pressure sensor assemblies and methods. The pressure sensor assembly may include a first substrate, a second substrate and a sense die. The first substrate may be connected to the second substrate, such that an aperture in the first substrate is in fluid communication with an aperture in the second substrate. The second substrate may be connected to the sense die, such that the aperture in the second substrate is in fluid communication with a sense diaphragm on the second substrate. The pressure sensor assembly may include a media path that extends through the aperture in the first substrate, through the aperture in the second substrate, and to the sense die. In some cases, the first substrate, the second substrate and the sense die may be connected in a manner that does not include an adhesive.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.

Abstract: According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region.

Abstract: A pressure sensor package is provided that reduces the occurrence of micro gaps between molding material and metal contacts that can store high-pressure air. The present invention provides this capability by reducing or eliminating interfaces between package molding material and metal contacts. In one embodiment, a control die is electrically coupled to a lead frame and then encapsulated in molding material, using a technique that forms a cavity over a portion of the control die. The cavity exposes contacts on the free surface of the control die that can be electrically coupled to a pressure sensor device using, for example, wire bonding techniques. In another embodiment, a region of a substrate can be encapsulated in molding material, using a technique that forms a cavity over a sub-portion of the substrate that includes contacts. A pressure sensor device can be electrically coupled to the exposed contacts.

Abstract: A micro electronic mechanical system structure and a manufacturing method thereof are provided. A substrate has a plurality of conductive regions is provided. A dielectric layer is formed on the substrate. A plurality of openings and recesses are formed in the dielectric layer, wherein the openings expose the conductive regions. The recesses are located between the openings. A conductive layer is formed on the dielectric layer and the openings and the recesses are filled with the conductive layer. The conductive layer is patterned to form a plurality of strips of the first conductive patterns on the dielectric layer and a second conductive pattern on the sidewall and the bottom of each recess, wherein the first conductive patterns are connected with each other through the second conductive patterns. The dielectric layer is removed. The second conductive patterns between the first conductive patterns are removed.

Abstract: Systems and methods for conductive pillars are provided. In one embodiment, a system comprises an electrical board comprising an electrical device, and a packaged die, the packaged die bonded to the electrical board. The packaged die comprises a substrate layer, the substrate layer comprising a recessed area, a conductive trace, wherein a portion of the conductive trace is formed in the recessed area, and an epitaxial device layer bonded to the substrate layer. The device layer comprises a MEMS device, and an epitaxial conductive pillar, wherein a first side of the epitaxial conductive pillar is electrically connected to the conductive trace and the second side of the epitaxial conductive pillar is electrically connected to the electrical board, wherein the epitaxial conductive pillar extends through the epitaxial device layer to electrically couple the conductive trace to an interface surface on the epitaxial device layer.