Abstract: Disclosed is a method for producing a copper indium selenium (CIS) or copper indium gallium selenium (CIGS) thin-film light-absorbing layer. The method includes forming a coating layer of CIGS slurry, removing a solvent, a dispersant and a binder from the coating layer to form a powder coat layer, pressing the powder coat layer to improve its particle packing density, and heating the powder layer to form a dense thin film. The method uses a powder process as a non-vacuum process to produce a CIS or CIGS thin film in high yield at low cost. Further disclosed is a method for manufacturing a thin-film solar cell including the production method.

Abstract: A method of making a sputtering target includes forming a sputtering target containing a relatively porous sputtering material. The sputtering material may be initially formed to be substantially free of water or treated to remove substantially all of absorbed or adsorbed water from the sputtering material. The method also includes forming a water impermeable barrier layer over the substantially water free sputtering material to completely or substantially prevent re-absorption or re-adsorption of water in the sputtering material.

Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: A precursor layer for a photovoltaic absorber layer on a substrate is formed, where the precursor layer comprises group IB and IIIA elements. The precursor layer is heated in an elongate furnace, where the heating includes depositing a group VIA-based material on the precursor layer. The substrate is placed on a support and advanced through the furnace. The support has an anti-stiction surface of a material including at least one of: silicon carbide, glass, spin-on-glass (SOG), diamond-like carbon (DLC), silicon carbide (SiC), a hydrogenated diamond coating, pyrolytic carbon and a fluoropolymer.

Abstract: Techniques for preparing chalcogen-containing solutions using an environmentally benign borane-based reducing agent and solvents under ambient conditions, as well as application of these solutions in a liquid-based method for deposition of inorganic films having copper (Cu), zinc (Zn), tin (Sn), and at least one of sulfur (S) and selenium (Se) are provided. In one aspect, a method for preparing a chalcogen-containing solution is provided. The method includes the following steps. At least one chalcogen element, a reducing agent and a liquid medium are contacted under conditions sufficient to produce a homogenous solution. The reducing agent (i) contains both boron and hydrogen, (ii) is substantially carbon free and (iii) is substantially metal free.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.

Abstract: A method for preparing a Group 1a-1b-3a-6a material using a selenium ink comprising a chemical compound having a formula RZ—Sex—Z?R? stably dispersed in a liquid carrier is provided, wherein the selenium ink is hydrazine free and hydrazinium free.

Abstract: Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.

Abstract: Processes for making a photovoltaic absorber by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to make a photovoltaic absorber having a concentration gradient of various atoms. CIGS thin film solar cells can be made.

Abstract: A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer.

Abstract: A chemical bath deposition method and a system are presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

Abstract: A method for preparing an A-B-C2 or A2-(Dx, E1—x)-C4 absorber thin film for photovoltaic cells where 0?x?1, A is an element or mixture of elements selected within Group 11, B is an element or mixture of elements selected within Group 13, C is an element or mixture of elements selected within Group 16, D is an element or mixture of elements selected within Group 12, and E is an element or mixture of elements selected within Group 14. Said method includes: a step of electrochemically depositing oxide from elements selected from among Groups 11, 12, 13, and 14, a step of annealing in a reducing atmosphere, and a step of supplying an element from Group 16.

Abstract: A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

Abstract: It is aimed to provide a photoelectric conversion device having high reliability by reducing cracks occurring in a photoelectric conversion layer. Included is a laminate in which a substrate, a pair of electrodes located on the substrate with a gap therebetween, and a photoelectric conversion layer located in the gap and on the pair of electrodes are laminated, wherein each of the pair of electrodes includes a linear portion extending along the gap and a first projecting portion including a curved tip surface projecting from the linear portion toward the gap, the linear portion and the first projecting portion being alternately arranged along the gap.

Abstract: An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 2 to 30 minutes after which the temperature is reduced.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell, and for targeting a particular concentration. CIGS thin film solar cells can be made.

Abstract: Solution-based processes for making thin film solar cells including CIGS are disclosed. A solar cell can have a conversion efficiency of 15% to 20% or greater. Processes for making solar cells include depositing various layers of monomer and polymeric components on a substrate and converting the components into a thin film photovoltaic absorber material. The stoichiometry of metal atoms in a solar cell can be controlled and targeted.

Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed.

Abstract: A method of manufacturing a photovoltaic device, which method comprises the steps of providing a first layer structure on an second layer structure so that the first layer structure has an external surface, and an interface with the second layer structure, the first layer structure comprising a thin-film photovoltaic absorber layer; patterning through the first layer structure from the external surface to or into the second layer structure by first mechanically removing material from the first layer structure in a predetermined patterning area, and subsequently removing, by means of laser cleaning, residual material from the mechanical removal in the patterning area; and a system for patterning an object having a first layer structure on an second layer structure, the system comprising a mechanical patterning device and a laser cleaning device, and means for relative movement between the object, and the mechanical patterning device and the laser cleaning device.

Abstract: A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control.

Abstract: Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.

Abstract: A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu2S) or cuprous selenide (Cu2Se) target. Then, a CIGS thin film is further provided on the thermal expansion buffer layer. Finally, a thermal treatment is conducted for melting to integrate the copper ingredients of different thin film layers, thus improving the bondability between the thin film layers and preventing the cracking or the peeling off of the thin film layers caused by the thermal expansion difference.

Abstract: There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

Abstract: A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion layer and contains an Ia group element. Diffusion of the Ia group element to the photoelectric conversion layer improves the photoelectric conversion efficiency. A protective layer is formed between the supply layer and the circuit layer and prevents the diffusion of the Ia group element to the circuit layer.

Abstract: The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuInxGa1-xSe2) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.

Abstract: A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.

Abstract: A furnace includes a chamber extended in a first direction to accommodate a plurality of substrates, a process plate on which the substrates are mounted, and the process plate is disposed in the chamber and extended in the first direction. The process plate includes a plurality of thru-holes penetrating through an upper surface and a lower surface of the process plate. The furnace further includes at least one fan disposed under the lower surface to flow air in the chamber in a second direction such that the air flows from the upper surface to the lower surface through the thru-holes and a heater operatively connected to the chamber to heat the air in the chamber.

Abstract: Provided is a tandem-type compound semiconductor solar cell. The solar cell includes a transparent substrate and a plurality of solar cell layers provided on at least one surface of the transparent substrate. The plurality of solar cell layers respectively includes window layer and light absorbing layer. The light absorbing layer includes Cu(InGa)Se2 (CIGS) nanoparticles and the light absorbing layers included in the plurality of solar cell layers have different bandgaps due to different gallium (Ga) contents.

Abstract: Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Abstract: Provided is a compound semiconductor solar cell. The compound semiconductor solar cell includes: an impurity diffusion preventing layer disposed on a substrate, added with an alkali component, and formed of a metal layer of one of Cr, Co, or Cu; a rear electrode disposed on the impurity diffusion preventing layer and formed of Mo; a CIGS based light absorbing layer disposed on the rear electrode; and a front transparent electrode disposed on the light absorbing layer.

Abstract: A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.

Abstract: A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C.

Abstract: A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum environment may be employed as part of a deposition process.

Abstract: The present invention provides a non-vacuum method of depositing a photovoltaic absorber layer based on electrophoretic deposition of a mixture of nanoparticles with a controlled atomic ratio between the elements. The nanoparticles are first dispersed in a liquid medium to form a colloidal suspension and then electrophoretically deposited onto a substrate to form a thin film photovoltaic absorber layer. The absorber layer may be subjected to optional post-deposition treatments for photovoltaic absorption.

Abstract: Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In some embodiments, photovoltaic materials can be scribed using picosecond pulse widths and certain wavelength and laser fluence levels.

Abstract: A photovoltaic device includes a substrate, a first electrode layer over the substrate, a first compound semiconductor layer including copper, indium, gallium and selenium over the first electrode layer, a second compound semiconductor layer including copper, indium, and sulfur on the first compound semiconductor layer, and a second electrode layer over the second compound semiconductor layer.

Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.

Abstract: A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, an arylether group and an alkylether group; and, a Group 3a complex, comprising at least one Group 3a material selected from aluminum, indium, gallium and thallium complexed with a multidentate ligand; and, (b) a liquid carrier; wherein the selenium/Group 3a complex is stably dispersed in the liquid carrier.

Abstract: A solar cell comprises a substrate, a first transition metal layer comprising an alkali element or an alkali compound located over the substrate, a second transition metal layer comprising gallium located over the first transition metal layer, at least one p-type semiconductor absorber layer including a copper indium selenide (CIS) based alloy material located over the second transition metal layer, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a top electrode located over the n-type semiconductor layer.

Abstract: The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium-gallium selenide (CIGSe) type, and an encapsulating layer (5) based on a polysilazane.

Abstract: Manufacturing a photovoltaic device can include a vapor transport deposition process.

Abstract: A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt % Na2SeO3 and 88-96 wt % copper-gallium species is used to form a first precursor with a first Cu/Ga composition ratio. A second precursor over the first precursor has copper species and gallium species deposited using a second target device with a second Cu/Ga composition ratio substantially equal to the first Cu/Ga composition ratio. A third precursor comprising indium material overlies the second precursor. The precursor layers are subjected to a thermal reaction with at least selenium species to cause formation of an absorber material comprising sodium species and a copper to indium-gallium atomic ratio of about 0.9.

Abstract: The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.

Abstract: A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.