Abstract: A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion process from a surface region to an internal region of the epitaxial layer of second conductivity type, and a silicon oxide film pattern and a silicon nitride film pattern which are sequentially formed on the shallow junction layer.

Abstract: Devices and methods for improving the dynamic range and signal-to-noise ratio of image sensors. Complementary Metal Oxide Semiconductor (CMOS) image sensors that use at least one CMOS image pixel circuit, and methods that the CMOS image sensor integrated circuit is configured to perform.

Abstract: A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

Abstract: A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n- type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first n-type ion implantation region being aligned at one side of the transfer gate and having a first width and a first ion implantation depth; forming a second n-type ion implantation region aligned at one side of the transfer gate, the second n-type ion implantation region enclosing the first n-type ion implantation region and having a second width wider than the first width and a second ion implantation depth deeper than the first ion implantation depth and a second depth; forming a p-type ion implantation region between a surface of the semiconductor substrate and the first n-type ion implantation region, the p-type ion implantation region being aligned at one side of the transfer gate and partially overlapped with the first n-t

Abstract: The invention provides an image detector capable of improving the quality of detected images by reducing electronic noise, the image detector comprising, a plurality of scan lines disposed in parallel, a plurality of data lines provided so as to cross with the scan lines, thin film transistors connected with the scan and data lines and provided in matrix, sensor sections connected to the thin film transistor and provided in a matrix and a plurality of common lines disposed so as to apply bias voltage commonly to the sensor sections provided in matrix. Each of the scan lines, data lines and common lines are formed by metal layers different from each other and provided with insulating film(s) disposed therebetween.

Abstract: A liquid crystal display device according to an embodiment of the present invention a includes: a gate line on a substrate; a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern extended from the thin film transistor to overlap along the data line; a gate insulating pattern that overlaps along the semiconductor pattern to insulate the gate line and the data line; a pixel electrode in the pixel area spaced apart from the gate line and the data line and connected to the thin film transistor; and a passivation film formed in an area where the pixel electrode is not present to form a border with the pixel electrode.

Abstract: Spin-on-glass (SOG) or resist is coated on a passivation film formed on a photodiode region, and then a surface layer of the passivation film together with the SOG or the resist is etched back, to thereby remove irregularities of the surface of the passivation film and to optically planarize the passivation film. As a result, attenuation of light due to reflection, absorption, scattering, and interference is prevented, and a reduction in sensitivity due to variation in thickness of the passivation film is improved.