Abstract: A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.

Abstract: A method of fabricating microlenses in a CMOS image sensor including at least one of the following steps: Forming a color filter array including a plurality of color filters on a semiconductor substrater. Forming on and/or over the color filter array a flattening layer to compensate for height differences between color filters. Forming a silicon oxide layer on and/or over the flattening layer. Forming on and/or over the silicon oxide layer, a plurality of photoresist patterns which correspond to the color filters, wherein the photoresist patterns may be separated from each other. Forming a plurality of CxFy-based polymer bumps surrounding the plurality of photoresist patterns using at least one process gas (e.g. C5F8, CH2F2, Ar, and/or O2).

Abstract: A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.

Abstract: A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.

Abstract: A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface and a plurality of pixels formed on the front surface of the semiconductor substrate. A dielectric layer is disposed above the front surface of the semiconductor substrate. The sensor further includes a plurality of array regions arranged according to the plurality of pixels. At least two of the array regions have a different radiation response characteristic from each other, such as the first array region having a greater junction depth than the second array region, or the first array region having a greater dopant concentration than the second array region.

Abstract: A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color filter, thereby preventing a back bias voltage from influencing a transistor formed on the outside of a photodiode in a CMOS image sensor sensing optical color sensitivity of light rays irradiated to the photodiode.

Abstract: An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel.