Including Nitride (e.g., Gan) (epo) Patents (Class 257/E33.025)
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Publication number: 20080113463Abstract: A laser is used in fabricating a thin film gallium nitride (GaN) light emitting diode (LED). The laser has a wave length to be absorbed by GaN. The laser is used to define a GaN grain. And the laser is used to lift off a substrate after obtaining a bonding layer of GaN. Fabrication procedure is thus simplified.Type: ApplicationFiled: December 26, 2006Publication date: May 15, 2008Applicant: National Central UniversityInventors: Cheng-yi Liu, Ching-Liang Lin, Po-Han Chan
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Publication number: 20080108161Abstract: A method for manufacturing a vertical light-emitting diode is described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.Type: ApplicationFiled: January 9, 2008Publication date: May 8, 2008Applicant: Epistar CorporationInventor: Shi-Ming CHEN
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Publication number: 20080105889Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.Type: ApplicationFiled: October 29, 2007Publication date: May 8, 2008Inventors: Tae Jun Kim, Su Yeol Lee, Dong Woo Kim, Hyun Ju Park, Hyoun Soo Shin, In Joon Pyeon
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Publication number: 20080105885Abstract: A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.Type: ApplicationFiled: October 23, 2007Publication date: May 8, 2008Applicant: SONY CORPORATIONInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Tatsuo Ohashi
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Publication number: 20080102549Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.Type: ApplicationFiled: August 9, 2007Publication date: May 1, 2008Inventors: Youn-joon Sung, Su-hee Chae, Tae-hoon Jang, Kyu-sang Kim
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Patent number: 7364929Abstract: An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WOx) made of tungsten oxide is formed in superimposition, followed by annealing.Type: GrantFiled: July 26, 2006Date of Patent: April 29, 2008Assignee: Opnext Japan, Inc.Inventors: Akihisa Terano, Shigehisa Tanaka
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Publication number: 20080093618Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: ApplicationFiled: August 14, 2007Publication date: April 24, 2008Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Publication number: 20080087905Abstract: A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.Type: ApplicationFiled: November 16, 2007Publication date: April 17, 2008Applicant: SHARP KABUSHIKI KAISHAInventors: Yoshihiro UETA, Takayuki YUASA, Atsushi OGAMA, Yuhzoh TSUDA, Masahiro ARAKI
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Patent number: 7348602Abstract: The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer 7 is formed of a multiple quantum well structure containing InaGa1?aN (0?a<1). The p-cladding layer 8 is formed on said active layer containing the p-type impurity. The p-cladding layer 8 is mode of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer 8 is made of single-layered layer made of AlbGa1?bN (0?b?1). A low-doped layer 9 is grown on the p-cladding layer 8 having a p-type impurity concentration lower than that of the p-cladding layer 8.Type: GrantFiled: October 18, 2004Date of Patent: March 25, 2008Assignee: Nichia CorporationInventor: Koji Tanizawa
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Publication number: 20080070336Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.Type: ApplicationFiled: November 9, 2007Publication date: March 20, 2008Applicant: NEC CorporationInventor: Akitaka KIMURA
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Patent number: 7345317Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.Type: GrantFiled: June 13, 2005Date of Patent: March 18, 2008Assignee: OSRAM GmbHInventors: Ulrike Reeh, Klaus Höhn, Norbert Stath, Günter Waitl, Peter Schlotter, Jürgen Schneider, Ralf Schmidt
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Patent number: 7339255Abstract: A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1?100> direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11?20> direction lying in a range of 0.00 degree to 0.06 degree.Type: GrantFiled: July 21, 2005Date of Patent: March 4, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Tachibana, Chie Hongo, Shinya Nunoue, Masaaki Onomura
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Publication number: 20080048206Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portionsType: ApplicationFiled: May 1, 2007Publication date: February 28, 2008Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Su Yeol LEE, Bang Won OH, Doo Go BAIK, Tae Sung JANG, Jong Gun WOO, Seok Beom CHOI, Sang Ho YOON, Dong Woo KIM, In Tae YEO
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Publication number: 20080035951Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.Type: ApplicationFiled: July 3, 2007Publication date: February 14, 2008Inventors: Hee Seok Park, Gil Han Park, Sang Duk Yoo, Young Min Park, Hak Hwan Kim, Seon Young Myoung, Sang Bum Lee, Ki Tae Park, Myoung Sik Jung, Kyeong Ik Min
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Publication number: 20080035953Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: ApplicationFiled: July 24, 2007Publication date: February 14, 2008Inventors: Choi Beom, Oh Won, Woo Gun, Baik Go
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Publication number: 20080035908Abstract: An object of the present invention is to provide a Group III nitride semiconductor light-emitting device with high emission efficiency.Type: ApplicationFiled: November 14, 2005Publication date: February 14, 2008Applicant: SHOWA DENKO K.KInventor: Hiromitsu Sakai
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Patent number: 7327036Abstract: The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the second layer. The present invention further is related to methods of production and to intermediate or template devices highly suitable for the epitaxial growth of a high quality Group III-nitride layer.Type: GrantFiled: December 21, 2004Date of Patent: February 5, 2008Assignee: Interuniversitair Microelektronica Centrum (IMEC)Inventors: Gustaaf Borghs, Stefan Degroote, Marianne Germain
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Publication number: 20080001165Abstract: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.Type: ApplicationFiled: June 20, 2007Publication date: January 3, 2008Inventors: Tadao Hashimoto, Hitoshi Sato, Shuji Nakamura
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Publication number: 20080001166Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.Type: ApplicationFiled: September 5, 2007Publication date: January 3, 2008Inventors: Jong-Lam Lee, In-Kwon Jeong, Myung Yoo
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Publication number: 20070295984Abstract: A compound semiconductor luminescent device characterized by comprising: an electroconductive substrate; a compound semiconductor function layer including a GaN layer; an electrode; an adhesiveness-enhancing layer; and a bonding layer, which are stacked in this order, wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10?6/° C. or less from GaN.Type: ApplicationFiled: August 30, 2005Publication date: December 27, 2007Applicant: Sumitomo Chemical Company, LimitedInventors: Yoshinobu Ono, Sadanori Yamanaka
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Publication number: 20070295986Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.Type: ApplicationFiled: August 30, 2007Publication date: December 27, 2007Inventors: Jong-Lam Lee, In-Kwon Jeong, Myung Yoo
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Publication number: 20070295985Abstract: The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.Type: ApplicationFiled: June 14, 2007Publication date: December 27, 2007Applicant: Nitronex CorporationInventors: T. Weeks, Kevin Linthicum
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Publication number: 20070278509Abstract: A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers 104 and 106 having different electric conductive types and a light-emitting layer 105 which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body 111 made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.Type: ApplicationFiled: March 17, 2005Publication date: December 6, 2007Inventors: Katsuki Kusunoki, Kazuhiro Mitani, Takashi Udagawa
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Publication number: 20070224715Abstract: An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WOX) made of tungsten oxide is formed in superimposition, followed by annealing.Type: ApplicationFiled: July 26, 2006Publication date: September 27, 2007Inventors: Akihisa Terano, Shigehisa Tanaka
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Patent number: 7271404Abstract: A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impurity concentration lower than the first region.Type: GrantFiled: December 21, 2005Date of Patent: September 18, 2007Assignee: Hitachi Cable, Ltd.Inventors: Yuichi Oshima, Masatomo Shibata
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Patent number: 7250638Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.Type: GrantFiled: September 23, 2005Date of Patent: July 31, 2007Assignee: LG Electronics Inc.Inventors: Jong-Lam Lee, In-kwon Jeong, Myung Cheol Yoo
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Publication number: 20070172973Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.Type: ApplicationFiled: March 2, 2007Publication date: July 26, 2007Inventor: Myung Yoo
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Publication number: 20070141823Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: ApplicationFiled: November 30, 2006Publication date: June 21, 2007Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Denis Tsvetkov, Andrew Hanser, N. Williams, Xueping Xu
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Patent number: 7198971Abstract: The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a substrate, sequentially forming a buffer layer and a first nitride semiconductor thin film on a whole surface of the substrate, etching higher defect density regions of the first nitride semiconductor thin film, and then laterally growing a second nitride semiconductor thin film. Thus, a highly crystalline nitride semiconductor thin film can be obtained. Therefore, there are advantages in that high-efficiency, high-power and high-reliability optical devices or electronic devices can be manufactured and high throughput can also be obtained by using the obtained nitride semiconductor thin film.Type: GrantFiled: December 29, 2004Date of Patent: April 3, 2007Assignee: LG Electronics Inc.Inventor: Johngeon Shin
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Publication number: 20070072320Abstract: A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially compentent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.Type: ApplicationFiled: September 11, 2006Publication date: March 29, 2007Inventors: Eric Frayssinet, Bernard Beaumont, Jean-Pierre Faurie, Pierre Gibart
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Publication number: 20070026644Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: September 29, 2006Publication date: February 1, 2007Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7170108Abstract: An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III–V nitride semiconductor with oxygen atoms.Type: GrantFiled: April 6, 2004Date of Patent: January 30, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Daisuke Ueda, Shinichi Takigawa
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Patent number: 7161301Abstract: A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal reflecting layer. Therefore, the metal reflecting layer can reflect light emitted from the light-emitting stack layer to increase the brightness of the nitride light-emitting device.Type: GrantFiled: October 29, 2003Date of Patent: January 9, 2007Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Wen-Huang Liu, Ming-Jiunn Jou
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Patent number: 7148514Abstract: The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.Type: GrantFiled: June 18, 2004Date of Patent: December 12, 2006Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jun Ho Seo, Jong Ho Jang
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Patent number: 7145180Abstract: In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.Type: GrantFiled: July 28, 2003Date of Patent: December 5, 2006Assignee: Shin-Etsu Handotai Co., Ltd.Inventors: Masayuki Shinohara, Masato Yamada
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Patent number: 7105850Abstract: Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1?yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type GaN layer, an active layer, a p-type shielding layer, and a p-type contacting layer. In this invention, Mg and Al are used to co-dope the In1?yGayN to grow a low resistive p-type contacting layer at low temperature. Because of the Al—Mg-codoped, the light absorption problem of the p-type In1?yGayN layer is improved. The product, not only has the advantage of convenience of the p-type contacting layer for being manufactured at low temperature, but also shows good electrical characteristics and lowers the operating voltage of the entire element so that the energy consumption during operation is reduced and the yield rate is increased.Type: GrantFiled: February 3, 2005Date of Patent: September 12, 2006Assignee: Formosa Epitaxy IncorporationInventors: Liang-Wen Wu, Ru-Chin Tu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien
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Patent number: 7098484Abstract: In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.Type: GrantFiled: July 8, 2003Date of Patent: August 29, 2006Assignee: Sumitomo Chemical Company LimitedInventors: Sadanori Yamanaka, Yoshihiko Tsuchida, Yoshinobu Ono, Yasushi Iyechika
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Patent number: 7087922Abstract: A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r, wherein 0?x,y,z,p,q,r?1, and AlxInyGa1-x-yNzP1-z has an energy gap greater than that of AlpInqGa1-p-qNrP1-r. The AlxInyGa1-x-yNzP1-z layers have increasing thickness and the AlpInqGa1-p-qNzP1-r layers have decreasing thickness.Type: GrantFiled: November 16, 2004Date of Patent: August 8, 2006Assignee: Formosa Epitaxy IncorporationInventors: Liang-Wen Wu, Ru-Chin Tu, Cheng-Tsang Yu, Tzu-Chi Wen, Fen-Ren Chien
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Publication number: 20060157718Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.Type: ApplicationFiled: September 8, 2005Publication date: July 20, 2006Inventors: Jun Seo, Suk Yoon, Seung Chae
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Publication number: 20060151802Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.Type: ApplicationFiled: March 9, 2006Publication date: July 13, 2006Inventors: Masahiko Tsuchiya, Naochika Horio, Kenichi Morikawa