Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.

Abstract: A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure.

Abstract: A gallium nitride-based compound semiconductor light-emitting device is disclosed which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively. The negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of a Cr—Al alloy.

Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.

Abstract: A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.

Abstract: Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 ? in an n-side contact layer.

Abstract: The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 ? in an n-side contact layer.

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract: According to an aspect of the present invention, there is provided an optical semiconductor device, comprising, a first AlN clad-layer, a first nitride semiconductor guide-layer formed on the first AlN clad-layer, refractive index of the first nitride semiconductor guide-layer being larger than refractive index of the first AlN clad-layer, a nitride semiconductor core-layer formed on the first nitride semiconductor guide-layer, refractive index of the nitride semiconductor core-layer being larger than refractive index of the first AlN clad-layer and smaller than refractive index of the first nitride semiconductor guide-layer, a second nitride semiconductor guide-layer formed on the nitride semiconductor core-layer, refractive index of the second nitride semiconductor guide-layer being larger than refractive index of the nitride semiconductor core-layer, a second AlN clad-layer formed on the second nitride semiconductor guide-layer.

Abstract: A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.

Abstract: The invention discloses a method of fabricating a semiconductor optoelectronic device. First, a substrate is prepared. Subsequently, a buffer layer is deposited on the substrate. Then, a multi-layer structure is deposited on the buffer layer, wherein the multi-layer structure includes an active region. The buffer layer assists the epitaxial growth of the bottom-most layer of the multi-layer structure, and the buffer layer also serves as a lift-off layer. Finally, with an etching solution, only the lift-off layer is etched to debond the substrate away from the multi-layer structure, wherein the multi-layer structure serves as the semiconductor optoelectronic device.

Abstract: A light emitting element and a method for manufacturing the same are disclosed. In accordance with the element and the method, the dielectric thin film including the embossed pattern partially covering the sapphire substrate prevents damage of a sapphire substrate that occurs during a texturing of the sapphire substrate and a defect of an epitaxial thin film formed in a subsequent process.

Abstract: A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers 104 and 106 having different electric conductive types and a light-emitting layer 105 which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body 111made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.

Abstract: The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.

Abstract: A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 ?m is formed, using an Au layer in the n-side electrode as an underlying layer.

Abstract: A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

Abstract: A highly efficient light emitting diode with microcolumn array emitting surface, wherein the microcolumn array is prepared on the emitting surface of the light emitting diode, and can be formed with a two-dimensional periodic or non-periodic structure, the length and height of each microcolumn are in the same order of magnitude as, more specifically are from half to a few of, the wavelength of the emitting light. This invention utilizes a strong diffraction effect of the microcolumn array to increase the luminous efficiency of the light emitting diode. The distribution of light emitting is uniform. Compared with the conventional two-dimensional photonic crystal light emitting diode, the manufacturing process of this invention is simple, and the manufacturing cost is low. Compared with the conventional porous surface light emitting diode, the luminous efficiency of the light emitting diode according to this invention is high.

Abstract: Provided is a method for manufacturing a nitride semiconductor light emitting element. In the method, when an isolation trench for chip isolation and for laser lift-off is formed, a degradation-free nitride semiconductor light emitting element with high luminance can be formed without doing any damages to a light emitting region. In an n type nitride semiconductor layer 2, a step A is formed in a region beyond an active layer 3 looked from a p side. A protective insulating film 6 covers, to a portion of the step A, side surfaces of a part of the n type nitride semiconductor layer 2, the active layer 3, a p type nitride semiconductor layer 4, and a p electrode 5 as well as a part of an upper side of the p electrode 5. With a structure in which side surfaces of a chip are covered with the protective insulating film 6, when the isolation trench for chip isolation and for laser lift-off is formed using etching, the active layer 3 and the like are not exposed to etching gas for a long time.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x?2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.

Abstract: A semiconductor light emitting device comprises: a substrate; a semiconductor stack formed on one of surfaces of the substrate, the semiconductor stack including an active layer composed of a group III nitride semiconductor having a substantially nonpolar or substantially semipolar plane as a main surface; a first electrode formed in a part of a first electrode surface which is the other surface of the substrate; and a second electrode formed on a second electrode surface opposite to the first electrode surface across the substrate and semiconductor stack.

Abstract: A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm?3.

Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a TI group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.

Abstract: A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0?X<1) layer, an active layer including an InGaN layer, a second p-type AlYGa1-YN (0?Y?X<1) layer, a third p-type AlZGa1-XN layer (0?Z?Y?X<1), and a p-electrode in contact with the third p-type AlZGa1-ZN layer. The active layer is provided between the n-type gallium nitride-based semiconductor layer and the first p-type AlXGa1-XN layer. The second p-type AlYGa1-YN (0?Y?X<1) layer is provided on the first p-type AlXGa1-XN layer. The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than the p-type dopant concentration of the first p-type AlXGa1-XN layer. The third p-type AlZGa1-ZN layer (0?Z?Y?X<1) is provided on the second p-type AlYGa1-YN layer. The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than a p-type dopant concentration of the third p-type AlZGa1-ZN layer.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: An LED chip production method in which the sapphire substrate used in the process for formation of a nitride semiconductor can be easily and efficiently removed. The LED chip production method is a method for LED chips that has at least one nitride semiconductor layer. An LED chip structure assembly with a construction in which a nitride buffer layer is formed on the sapphire substrate and the at least one nitride semiconductor layer is formed on the nitride buffer layer which is then subjected to a chemical etching process to remove the nitride buffer layer, thereby facilitating removal of the sapphire substrate.

Abstract: In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated.

Abstract: For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.

Abstract: Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein at least two of the Un-GaN layers and at least two of the N-type semiconductor layers are alternatively stacked on each other.

Abstract: A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.

Abstract: A self-supported nitride semiconductor substrate of 10 mm or more in diameter having an X-ray diffraction half width of 500 seconds or less in at least one of a {20-24} diffraction plane and a {11-24} diffraction plane.

Abstract: The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc (a?0,b>0,c?0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc layer having an n-type conductivity and a thickness of 5 ? to 500 ? for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc layer. According to the present invention, a SiaCbNc (a?0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

Abstract: A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer and comprising a first film that comprises a transparent conductive zinc oxide having a one-dimensional nano structure, wherein the one-dimensional nano structure is at least one selected from a nano-column, a nano rod, and a nano wire.

Abstract: In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

Abstract: In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 ?m to ±100 ?m. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 ?m to ?20 ?m is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow.

Abstract: A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor film. A conductive substrate is bonded to a surface of the electrode film using a conductive adhesive. After bonding the conductive substrate, the GaN or AlGaN substrate is separated from the GaN-based semiconductor portion to form the semiconductor light generating device.

Abstract: A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10?3 ?cm.

Abstract: In accordance with embodiments of the invention, a III-nitride structure includes a plurality of posts of semiconductor material corresponding to openings in a mask layer. Each post includes a light emitting layer. Each light emitting layer is disposed between an n-type region and a p-type region. A first light emitting layer disposed in a first post is configured to emit light at a different wavelength than a second light emitting layer disposed in a second post. In some embodiments, the wavelength emitted by each light emitting layer is controlled by controlling the diameter of the posts, such that a device that emits white light without phosphor conversion may be formed.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

Abstract: A transparent conductive oxide contact layer to enhance the spectral output of a light emitting device and a methodology for its deposition. The transparent conductive oxide deposited on the light emitting device so as to have a columnar structure. The transparent conductive oxide contact layer may be preferably ZnO doped with a conductive element. Light emitting phosphors may also be deposited within the transparent conductive oxide contact layer.

Abstract: A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

Abstract: A method of fabricating a nitride semiconductor light emitting device includes the steps of: depositing on a substrate a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, and p-type nitride semiconductor tunnel junction layer containing an indium, in this order; depositing a nitride semiconductor evaporation reduction layer on the p-type nitride semiconductor tunnel junction layer at the temperature of the substrate which is at most a temperature higher by 150° C.