Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract: The present invention makes available AlxGa(1-x)As (0?x?1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics. An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a).

Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

Abstract: A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10?6/° C. or less from GaN.

Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1?xN layer formed on the first electrode layer; an active layer formed on the InxGa1?xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.

Abstract: A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion.

Abstract: A method for manufacturing a compound semiconductor device includes forming a first compound semiconductor layer over a first substrate, the first compound semiconductor layer containing AlxGa1-xN (0?x<1) having a first band gap; forming a second compound semiconductor layer over the first compound semiconductor layer, the second compound semiconductor layer containing AlyInzGa1-y-zN (0<y<1, 0<y+z?1) having a second band gap larger than the first band gap; forming a compound semiconductor laminated structure over the second compound semiconductor layer; and removing the first compound semiconductor layer while irradiating the first compound semiconductor layer with light having an energy between the first band gap and the second band gap, separating the first substrate from the compound semiconductor laminated structure.

Abstract: Radiation occurs when current is injected into an active layer from electrodes. A pair of clad layers is disposed sandwiching the active layer, the clad layer having a band gap wider than a band gap of the active layer. An optical absorption layer is disposed outside at least one clad layer of the pair of clad layers. The optical absorption layer has a band gap wider than the band gap of the active layer and narrower than the band gap of the clad layer. A spread of a spectrum of radiated light can be narrowed.

Abstract: There is provided a compound semiconductor light emitting device capable of optimizing strain applied to an active layer and a clad layer to minimize a piezoelectric field and spontaneous polarization in an active layer and to maximize light emission efficiency. In a compound semiconductor light emitting device having a structure in which a buffer layer, a first clad layer, an active layer, and a second clad layer are sequentially deposited, a strain induction layer and a strain control layer intersect at least once and are deposited between the buffer layer and the first clad layer, the strain induction layer performs induction so that compressive strain to be applied to the active layer is dispersed to the strain control layer, and the compressive strain applied to the active layer is reduced as the compressive strain is applied to the strain control layer.

Abstract: An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle ? from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle ? is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°.

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.

Abstract: A method for manufacturing an optical device comprises steps of: (a) laminating a first, a second, a third, a fourth, a fifth, and a sixth semiconductor layers; (b) patterning at least the third, fourth, fifth and sixth semiconductor layers, thereby forming a light emitting device section and a rectification section; (c) forming first and second electrodes for driving the light emitting device section; and (d) connecting the fourth and sixth semiconductor sections between the first and second electrodes in parallel with the light emitting device section so as to have a rectification action in a reverse direction with respect to the light emitting device section, wherein the step (b) includes conducting etching until a portion of a top surface of the third semiconductor layer is exposed.

Abstract: A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer.

Abstract: A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.

Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.

Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.

Abstract: A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate includes a Si-containing substrate, an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, and a substantially relaxed SiGe layer present atop the insulating region. The insulating region includes an upper region that is comprised of a thermal oxide and the substantially relaxed SiGe layer has a thickness of about 2000 nm or less.

Abstract: A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50. The nitride-based semiconductor multilayer structure 50 includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a?0, b?0 and c?0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e?0); and an AlfGagN layer 38 (where f+g=1, f?0, g?0 and f<d). The AldGaeN overflow suppressing layer 36 is arranged between the active layer 32 and the AlfGagN layer 38. And the AldGaeN overflow suppressing layer 36 includes an In-doped layer that is doped with In at a concentration of 1×1016 atms/cm3 to 1×1019 atms/cm3.

Abstract: Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.

Abstract: An electroluminescence device includes at least one electroluminescence light source for emitting a primary radiation, such as having wavelengths between 200 nm and 490 nm, and at least one light-converting element, arranged in the path of the rays of the primary radiation, for partial absorption of the primary radiation and emission of a secondary radiation. The light-converting element has a dilatation or expansion in the radiation direction of the primary radiation, which is less than an average scattering length of the primary radiation in the light-converting element.

Abstract: Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.

Abstract: A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.

Abstract: A semiconductor light emitting device including a first semiconductor layer, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, and at least one SiNx cluster layer formed between the first semiconductor layer and the second semiconductor layer.

Abstract: A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.

Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Abstract: The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.

Abstract: The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.

Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Abstract: A nitride semiconductor light emitting device including: a first nitride semiconductor layer, an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced.

Abstract: In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A second active layer for forming a second semiconductor optical device is provided on the first cladding layer in a second area of the principal surface. A second cladding layer made of a second conductivity type semiconductor is provided on the second active layer. A third cladding layer made of a first conductivity type semiconductor is provided on the first active layer. A tunnel junction region is provided between the first active layer and the third cladding layer. The first active layer is coupled to the second active layer by butt joint. The second and third cladding layers form a p-n junction.

Abstract: The invention relates to a nitride semiconductor LED using a hybrid buffer layer with a minimum lattice mismatch between the buffer layer and the nitride semiconductor and a fabrication method therefor. The fabrication method of a nitride semiconductor LED using a hybrid buffer layer comprises: a first step, in which an AlxGa1-xN (0?x<1) layer is formed over a semiconductor; a second step, in which a crystalline seed layer of a 3D structure and AlOyNz are formed over the substrate, the crystalline seed layer being formed by recrystallizing the substrate with the AlxGa1-xN (0?x<1) layer formed thereover and containing a substance with a general formula of AlxGa1-xN (0?x<1); and a third step, in which the substrate having gone through the second step is subject to heat treatment under NH3 gas atmosphere to form an AlN nano structure, thus forming over the substrate a hybrid buffer layer consisting of the 3D crystalline seed layer and the AlN nano structure.

Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

Abstract: Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 comprises a first well layer 14, second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14, and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.

Abstract: A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.

Abstract: A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer.

Abstract: The present invention discloses a fluorine-oxide phosphor powder, based on the cubic garnet fluorine oxide and yttrium aluminum oxide and using cerium as activator, is characterized in that the luminescent material is added with fluorine with a chemical equivalence formula as Y3-xCexAl2(AlO4-?FO)?Fi)?)3, wherein FO is fluorine ion in the lattice point of oxygen crystal and Fi is fluorine ion between the lattice points. The phosphor powder has cerium ions Ce+3 as activator and can be excited by quantum radiation or high-energy particles with energy between E?2.8 eV and E?1 MeV to have a peak wavelength between ?=538˜548 nm and half bandwidth of ??0.5=109-114 nm. Moreover, the present invention also discloses an In—Ga—N heterojunction used in spectrum converter, semiconductor light source, scintillating phosphor powder, scintillation sensor, and FED (Field Emission Display) monitor.

Abstract: An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of AlxGa1-xN, where 0<×?1 having a thickness from about 10 ?m to about 3 mm and defining apertures in the thickness of the buffer layer formed due to lateral overgrowth of the buffer layer over a grooved basal substrate. A n-junction LED layer overlying the buffer layer, a multiple quantum well LED layer overlying the n-junction LED layer, and a p-junction LED layer overlying the multiple quantum well LED layer are also included in the chip, where all of the LED layers comprise AlxGa1-xN, where 0<×?1.

Abstract: A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

Abstract: Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.

Abstract: A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.

Abstract: The invention discloses a red phosphor powder which is based on strontium (Sr) aluminiate and using europium (Eu) as exciting agent, and is characterized by that its chemical equivalence formula is (SrO)4(?Me+2O)1Al2O3: Eu, wherein Me+2=Mg and/or Ca and/or Ba. The present invention also discloses a manufacturing process for the red phosphor powder and a warm white light-emitting diode employing the phosphor powder. Moreover, the present invention also discloses a multi-layer polyethylene thin film using the red phosphor powder.

Abstract: A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP cladding layer 9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer) 10, a p-type GaInP intermediate layer 11, and a p-type GaAs cap layer 12 are sequentially grown on a n-type GaAs substrate 1.

Abstract: A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1?x?yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).

Abstract: To also intend the improvement of light-emitting efficiency by microcrystallizing light-emitting layer while utilizing vapor-phase growth method that is advantageous for improving crystal quality, and the like. 4 for forming light-emitting layer comprises a substrate single-crystal substrate 1, and an oriented fine crystal layer 3 being formed on the single-crystal substrate 4. One of the crystal axes of respective crystals, which constitute the oriented microcrystal layer 3, is oriented in a specific direction with respect to the single-crystal substrate 1, and an average of the crystal grain diameters of the respective crystals, which constitute the oriented microcrystal layer 3, is adapted to being 1-1,000 nm.

Abstract: A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15?X<1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.