Including Ternary Or Quaternary Compound (e.g., Algaas) (epo) Patents (Class 257/E33.031)
  • Patent number: 8890196
    Abstract: A solid-state light source has light emitting diodes embedded in a thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element has optically translucent thermal filler and at least one luminescent element in a matrix material. A leadframe is electrically connected to the light emitting diodes. The leadframe distributes heat from the light emitting diodes to the thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element distributes heat from light emitting diodes and the thermally conductive translucent luminescent element.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: November 18, 2014
    Assignee: Goldeneye, Inc.
    Inventors: Scott M. Zimmerman, William R. Livesay, Richard L. Ross, Eduardo DeAnda
  • Patent number: 8853735
    Abstract: Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1), and a barrier layer formed of a second group III nitride containing at least In and Al and having a composition of Inx2Aly2Gaz2N (x2+y2+z2=1), wherein the barrier layer has tensile strains in an in-plane direction, and pits are formed on a surface of the barrier layer at a surface density of 5×107/cm2 or more and 1×109/cm2 or less.
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: October 7, 2014
    Assignee: NGK Insulators, Ltd.
    Inventors: Makoto Miyoshi, Mikiya Ichimura, Tomohiko Sugiyama, Mitsuhiro Tanaka
  • Patent number: 8729598
    Abstract: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness.
    Type: Grant
    Filed: February 2, 2011
    Date of Patent: May 20, 2014
    Assignee: Showa Denko K.K.
    Inventors: Wataru Nabekura, Ryouichi Takeuchi
  • Patent number: 8674337
    Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1?x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Seong Jae Kim
  • Patent number: 8648384
    Abstract: A light emitting device is disclosed. In the light emitting device, the structure of a barrier layer of an active layer is changed, and a band gap energy of an intermediate layer is varied, thereby improving hole injection efficiency of the active layer and thus light emission efficiency.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: February 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jongho Na, Hoonki Hong, Hyunkee Lee
  • Patent number: 8502242
    Abstract: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: August 6, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: YuSik Kim
  • Patent number: 8441024
    Abstract: A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: May 14, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Tae Yun Kim, Hyo Kun Son
  • Patent number: 8420426
    Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: April 16, 2013
    Assignees: Sumitomo Electric Industries, Ltd., RIKEN
    Inventors: Hideki Hirayama, Katsushi Akita, Takao Nakamura
  • Patent number: 8404506
    Abstract: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: March 26, 2013
    Assignee: Technische Universitaet Berlin
    Inventors: Anatol Lochmann, Robert Seguin, Dieter Bimberg, Sven Rodt, Vladimir Gaysler
  • Patent number: 8354689
    Abstract: Light emitting devices described herein include dopant front loaded tunnel barrier layers (TBLs). A front loaded TBL includes a first surface closer to the active region of the light emitting device and a second surface farther from the active region. The dopant concentration in the TBL is higher near the first surface of the TBL when compared to the dopant concentration near the second surface of the TBL. The front loaded region near the first surface of the TBL is formed during fabrication of the device by pausing the growth of the light emitting device before the TBL is formed and flowing dopant into the reaction chamber. After the dopant flows in the reaction chamber during the pause, the TBL is grown.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: January 15, 2013
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Christopher L. Chua, Zhihong Yang
  • Patent number: 8242538
    Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: August 14, 2012
    Assignee: HRL Laboratories, LLC
    Inventors: Peter Deelman, Ken Elliott, David Chow
  • Patent number: 8124993
    Abstract: A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: February 28, 2012
    Assignee: Palo Alto Research Center Incorporated
    Inventors: David P Bour, Clifford F Knollenberg, Christopher L Chua
  • Patent number: 8076685
    Abstract: A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: December 13, 2011
    Assignee: Panasonic Corporation
    Inventors: Satoshi Tamura, Ryo Kajitani
  • Patent number: 8076677
    Abstract: A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the semiconductor light emitting element and part of the lead. The resin package includes a lens facing the semiconductor light emitting element. The lead includes an exposed portion that is not covered by the resin package. The exposed portion includes a first portion and a second portion, where the first portion has a first mount surface oriented backward along the optical axis of the lens, and the second portion has a second mount surface oriented perpendicularly to the optical axis of the lens.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: December 13, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Yasunori Hata, Masahiko Kobayakawa
  • Patent number: 8039370
    Abstract: A method for transferring a layer onto a support includes transferring the layer, assembled on an initial substrate, onto a liquid layer that has been previously deposited on the support. The layer is subsequently released from the initial substrate by chemical etching, and the liquid layer is evacuated to allow molecular adhesion of the layer to the support.
    Type: Grant
    Filed: August 5, 2008
    Date of Patent: October 18, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Damien Bordel, Léa Di Cioccio
  • Patent number: 7943943
    Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: May 17, 2011
    Assignees: Sumitomo Electric Industries, Ltd., RIKEN
    Inventors: Hideki Hirayama, Katsushi Akita, Takao Nakamura
  • Patent number: 7935974
    Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: May 3, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Myong Soo Cho
  • Patent number: 7928448
    Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: April 19, 2011
    Inventors: Jonathan J. Wierer, Jr., John E. Epler
  • Patent number: 7884388
    Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1?x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: February 8, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Seong Jae Kim
  • Patent number: 7868334
    Abstract: A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the semiconductor light emitting element and part of the lead. The resin package includes a lens facing the semiconductor light emitting element. The lead includes an exposed portion that is not covered by the resin package. The exposed portion includes a first portion and a second portion, where the first portion has a first mount surface oriented backward along the optical axis of the lens, and the second portion has a second mount surface oriented perpendicularly to the optical axis of the lens.
    Type: Grant
    Filed: April 8, 2008
    Date of Patent: January 11, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Yasunori Hata, Masahiko Kobayakawa
  • Patent number: 7859007
    Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: December 28, 2010
    Assignees: Sumitomo Electric Industries, Ltd., RIKEN
    Inventors: Hideki Hirayama, Katsushi Akita, Takao Nakamura
  • Patent number: 7842531
    Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: November 30, 2010
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
  • Publication number: 20100276709
    Abstract: A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.
    Type: Application
    Filed: January 14, 2009
    Publication date: November 4, 2010
    Applicant: SHIN-ETSU HANDOTAI, CO. LTD.
    Inventors: Yukari Suzuki, Jun Ikeda, Masataka Watanabe
  • Patent number: 7741654
    Abstract: The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: June 22, 2010
    Assignee: NEC Corporation
    Inventors: Kazuhisa Fukuda, Chiaki Sasaoka, Akitaka Kimura
  • Patent number: 7622745
    Abstract: A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP cladding layer 9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer) 10, a p-type GaInP intermediate layer 11, and a p-type GaAs cap layer 12 are sequentially grown on a n-type GaAs substrate 1.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: November 24, 2009
    Assignee: Hitachi Cable, Ltd.
    Inventor: Ryoji Suzuki
  • Patent number: 7601985
    Abstract: A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1?x?yInyN (wherein 0.001?x<0.1, 0<y<1 and x+y<1).
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: October 13, 2009
    Assignee: Panasonic Corporation
    Inventors: Yoshitaka Kinoshita, Hidenori Kamei
  • Patent number: 7531827
    Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.
    Type: Grant
    Filed: January 18, 2006
    Date of Patent: May 12, 2009
    Assignee: LG Innotek Co., Ltd.
    Inventor: Seong Jae Kim
  • Patent number: 7518139
    Abstract: A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: April 14, 2009
    Assignee: Lehigh University
    Inventors: Nelson Tansu, Ronald A. Arif, Yik Khoon Ee
  • Patent number: 7514720
    Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: April 7, 2009
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Myong Soo Cho
  • Patent number: 7374959
    Abstract: A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: May 20, 2008
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventor: Chong Mann Koh