Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Abstract: The present invention provides a chip module structure for particles protection. The structure includes a substrate. A chip is configured on the substrate, with a sensing area. A holder is disposed on the substrate, wherein the holder has a first rib. A transparent material is disposed on the holder, substantially aligning to the sensing area. A lens holder is disposed on the holder, and a lens is configured on the lens holder, substantially aligning to the transparent material and the sensing area. The lens has a second rib, wherein the second rib is disposed corresponding to the first rib for blocking particles entering into the chip module structure.

Abstract: The present invention provides a holder on chip module structure including a substrate. A chip is configured on the substrate, with a sensing area. A holder is disposed on the substrate, wherein a portion of the holder is directly contacted to the chip to reduce the tilt between the chip and the holder. A transparent material is disposed on the holder, substantially aligning to the sensing area. A lens holder is disposed on the holder, and a lens is configured on the lens holder, substantially aligning to the transparent material and the sensing area.

Abstract: A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having square dimensions greater than 3.5 mm used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management.

Abstract: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.

Abstract: A component including at least one active element hermetically encapsulated in a cavity formed between a support and a cover, in which the support and the cover are made from an electrically conductive material, and are insulated electrically from one another, and include a first electrical connection between the active element and the support, and a second electrical connection, separate from the first connection, between the active element and the cover, and in which: the active element is securely attached to the support through a dielectric layer positioned between the support and the active element, and between the support and the cover; the second electrical connection includes a second portion of electrically conductive material electrically connected to the cover, positioned on the dielectric layer and electrically in contact with an electrically conductive sealing bead providing hermetic secure attachment of the cover to the support.

Abstract: A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes. The package has a back face opposed to the front face and a bottom face that is located between the back face and the front face. The bottom face is adjacent to the front face. The outer lead electrodes protrude from the bottom face of the package. An end of each of the outer lead electrodes branches in at least two distal end parts on the bottom face. One of the distal end parts of each of the outer lead electrodes extends toward one of side faces of the package and is bent along the side face, and other one of the distal end parts of each of the outer lead electrodes extends toward the back face of the package.

Abstract: A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate.

Abstract: A LED module with separate heat-dissipation and electrical conduction paths is disclosed, having a metal substrate; a plastic layer, including one or more hollow regions, and attached to the metal substrate; one or more conducting elements attached to the plastic layer; one or more LED chips positioned in the one or more hollow regions of the plastic layer and directly attached to the metal substrate; and a plurality of conducting wires for electrically connecting the one or more conducting elements and the one or more LED chips; wherein inner sides of the one or more hollow regions include one or more inclined surfaces each having an included angle with an upper surface of the metal substrate, and the included angle is between 90˜180 degrees.

Abstract: An optical semiconductor lighting apparatus includes a light emitting module including a semiconductor optical device, a housing to house the light emitting module, a first sealing body connected to a groove recessed in a polygonal or closed-curve shape of the housing, a first optical cover covering an outer edge of the groove and a top surface of the housing, a first rib formed on a top surface of the first sealing body along a forming direction of the first sealing body, and a pair of second ribs formed in parallel along both edges of a bottom surface of the first sealing body.

Abstract: A method of assembling a semiconductor device includes providing a substrate having an array of substrate elements linked by substrate corner elements and separated by slots extending between the corner elements. Semiconductor dies are positioned on the substrate elements. A cap, frame and contact structure is provided that has a corresponding array of caps supported by corner legs linking the caps to frame corner elements, frame elements linking the frame corner elements, and sets of electrical contact elements supported by the frame elements. The cap, frame and contact structure is fitted on the substrate with the caps extending over corresponding dies, the frame corner elements extending over the substrate corner elements, and the sets of electrical contact elements disposed in the slots. The dies are connected electrically with the electrical contact elements and the assembly is encapsulated and singulated. Singulating removes the frame elements.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.

Abstract: A wafer level light-emitting device package may include a polymer layer that bonds a light-emitting structure to a package substrate, and the polymer layer and the package substrate may include a plurality of via holes. Also, a method of manufacturing the wafer level light-emitting device package may include forming the polymer layer on the light-emitting structure, bonding the package substrate onto the polymer layer by applying heat and pressure, and forming a plurality of via holes in the polymer layer and the package substrate.

Abstract: A semiconductor chip includes a semiconductor substrate with a top surface and a bottom surface. An active layer may be formed on the top surface of the semiconductor substrate and may comprise one or more signal pads and one or more chip selection pads on an upper surface of the active layer. First and second through electrodes may be formed to pass through the semiconductor substrate and the active layer, with the first through electrodes being electrically connected with the signal pads and the second through electrodes being electrically connected with the chip selection pads. A side electrode may be formed on a side surface of the semiconductor chip in such a way as to be connected with a second through electrode.

Abstract: Disclosed herein is a semiconductor light emitting device module comprising: a heat transfer member having a cavity; first conductive layer and second conductive layer contacting the heat transfer member via an insulating layer, the first conductive layer and the second conductive layer being electrically separated from each other in accordance with exposure of the insulating layer or exposure of the heat transfer member; and at least one semiconductor light emitting device electrically connected to the first conductive layer and the second conductive layer, the at least one semiconductor light emitting device is thermally contacted an exposed portion of the heat transfer member, wherein the insulating layer has an exposed portion disposed outside the cavity.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Abstract: High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode.

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract: Reducing effects of thermal expansion in electronic components. An electronic device can include a support, such as a leadframe. An electronic component can be supported by the support. A first flexible layer can cover the electronic component. A second more rigid layer can cover the first layer. The first layer can be made from a material that is more flexible than the second layer thereby creating a mechanical buffer layer between the second layer and the electronic component such that the electronic component is protected from thermal expansion of the second portion caused by changes in temperature. The electronic component can be a laser. The first and second materials can be selected to disperse an optical emission from the optical transmitter.

Abstract: An electronic switching component (1) with gallium arsenide-based field effect transistors has its own housing (2) with at least one transparent section (3). An electronic microwave circuit (10) has at least one electronic switching component (1) with gallium arsenide-based field effect transistors and its own housing (2) with at least one transparent section (3). The at least one electronic switching component (1) can be illuminated by means of at least one light source (6, 11).

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: An LED unit includes a housing accommodating a wiring substrate mounted an LED, the housing including a light projecting portion for projecting light emitted from the LED, and wiring lines electrically connected to the wiring substrate. First and second lead-out portions, for leading out the wiring lines, are respectively provided at opposite end portions of the housing along a specified direction when seen in a plan view. First and second attachment portions for attaching the housing are respectively provided in the opposite end portions of the housing along the specified direction. The first and second lead-out portions are arranged at the opposite sides from each other with respect to a centerline of the housing extending along the specified direction. The first and second attachment portions are respectively arranged at the opposite sides from the first and second lead-out portions with respect to the centerline of the housing.

Abstract: Encapsulated LEDs can be made by taking a mold tool defining a cavity that defines a lens shape and providing a patterned release film defining the inverse of a microstructure in a surface of the film. The patterned release film is conformed to the cavity of the mold tool. An LED chip is placed in a spaced relationship from the patterned release film in the cavity. A resin is then introduced into the space between the LED chip and the patterned release film in the cavity. The resin is cured in the space between the LED chip and the patterned release film in the cavity while contact is maintained between the patterned release film and the curing resin. The encapsulated LED is then freed from the mold tool and the patterned release film.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: In one aspect, an LED package structure comprises a fluorescent substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The fluorescent substrate has a first surface and a second surface opposite the first surface. The fluorescent substrate comprises a mixture of a fluorescent material and a glass material. The first electrically conductive pattern is disposed on the first surface. The second electrically conductive pattern is disposed on the second surface. The electrically conductive element passes through the fluorescent substrate and connects the first and second electrically conductive patterns. The LED chip is disposed on the second surface and has a light extraction surface that connects the second electrically conductive pattern. The LED chip is electrically coupled to the first electrically conductive pattern via the electrically conductive element.

Abstract: An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

Abstract: Disclosed are a light emitting device package and a lighting system in which the light emitting device package includes a first cavity in a first region of the body, a second cavity in a second region of the body, first and second lead frames spaced apart from each other in the first cavity, a third lead frame spaced apart from the second lead frame in the second cavity, a first light emitting device on the first and second lead frames in the first cavity, a second light emitting device on the second and third lead frames in the second cavity, and a molding member in the first and second cavities.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: A mounting board including a pair of patterned electrodes, a lower surface and an upper surface opposed thereto on which a substrate of an electronic component is to be mounted, a pass-through hole penetrating through the upper surface and the lower surface, and a peripheral side surface that defines the pass-through hole. The pass-through hole includes a plurality of penetrating grooves that are cut into the mounting board and penetrate through the upper and lower surfaces. The plurality of penetrating grooves electrically split the pair of patterned electrodes. The pair of patterned electrodes is partly positioned inside the peripheral side surface, and a connection portion connecting the at least one pair of patterned electrodes and at least one pair of patterned electrodes provided on the upper surface of the substrate of the electronic component is to be disposed inside the peripheral side surface that defines the pass-through hole.

Abstract: A light emitting apparatus comprises an electrically insulating base member; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. At least the resin-covered parts of each of the electrically conductive pattern portions has at least one elongated through hole extending in a direction in which the electrically conductive pattern portions extend from the resin-covered parts, wherein the resin portion contacts the base member via the through holes.

Abstract: One embodiment of the invention provides an illumination system including a light-source supporting body and a power supporting body. The light-source supporting body has a first groove. At least a light-source module is received in the first groove. The power supporting body has second groove. At least a power module is received in the second groove. The light-source supporting body is detachably fixed on the power supporting body. Each light-source module includes a multichip package structure composed of a plurality of light-emitting chips, and each of the light-source modules and the power module are separated by the light-source supporting body and the power supporting body.

Abstract: An AC LED device and method for fabricating the same are disclosed. An exemplary embodiment of the AC LED device includes at least two separate AC LED unit chips, wherein each of the AC LED unit chip includes a substrate having a first light emitting module and a second light emitting module. Each of the first and second light emitting modules includes a plurality of light emitting micro diodes connected between a first conductive electrode and a second conductive electrode, wherein the amount of light emitting micro diodes emitting light during a positive half cycle of an AC charge is equal to that during a negative half cycle of an AC charge. A plurality of conductive wires is respectively and electrically connected to the separate AC LED unit chips without passive devices.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode.

Abstract: A package structure includes a base unit, a pin unit and a housing unit. The base unit has a carrier member and a through hole penetrating through the carrier member, and at least one annular structure is formed in the through hole. The pin unit has a plurality of conductive pins disposed beside the carrier member. The housing unit has an annular housing encircling the carrier member to envelop one part thereof and connecting to the pin unit, and the annular housing is partially filled into the through hole to cover the annular structure. Therefore, the instant disclosure can increase the bonding force between the carrier member and the annular housing and retard external moisture to permeate through slits between the carrier member and the annular housing to intrude into the chip-mounting region, thus the reliability and the usage life are increased.

Abstract: An LED lighting device comprises a plurality of light emitting units which is configured to emit visible light having different colors which are mixed with each other to produce a white light. Each the light emitting units is composed of an LED chip and a phosphor. The LED chip is configured to generate light. The phosphor has a property of giving off a light of a predetermined color when the phosphor is excited by the light from the LED chip. The LED chip is selected from a group consisting of a blue LED chip, a UV LED chip, ad a violet LED chip. Each the phosphor is selected to give off the light of a predetermined color different from one another.

Abstract: Disclosed is a light emitting diode package having a simplified configuration and high color reproducibility. The light emitting diode package includes a package body, first and second light emitting diode chips received in the package body, a lead frame electrically connected to the first and second light emitting diode chips, the lead frame serving to adjust color of light according to the ratio of current of the first and second light emitting diode chips, and a light conversion layer configured to cover the first and second light emitting diode chips, the light conversion layer serving to convert light emitted from the first and second light emitting diode chips into a particular wavelength of light so as to emit a desired wavelength of light.

Abstract: A housing body for an optoelectronic component comprises a main surface having a first area region and a second area region. The first area region and the second area region form a step in the main surface. The first area region and the second area region adjoin one another by means of an outer edge. The second area region and the outer edge enclose the first area region.

Abstract: The surface light emitting device includes an organic EL element, a protection substrate, a protection part, and a light extraction structure part. The element has a first face and a second face opposite to the first face, and emits light from the first face. The substrate has transparency for light emitted from the element, and is placed facing the first face, and has a primary surface facing the first face of the element. The protection part is placed facing the second face of the element, and constitutes a housing in combination with the substrate and accommodates the element so as to protect the element from water. The structure part is interposed between the first face of the element and the substrate, and suppresses reflection of light emitted from the element on at least one of the first face of the element and the primary surface of the substrate.

Abstract: An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes a transparent encapsulation layer sealing the LED chip therein, and in one embodiment, the light transmission layer is located on the encapsulation layer and in another embodiment, the encapsulation layer also seals the light transmission layer therein. A method for manufacturing the LED package is also provided.

Abstract: A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.

Abstract: A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

Abstract: A light emitting device comprises a case having a space therein, the space defined by an inner bottom surface and an inner side surface of the case, a lead frame housed in the space, and having a bending portion bent along the inner side surface of the case, and a light emitting element electrically connected to the lead frame, wherein a rear surface of the bending portion is embedded in the case and a front surface of the bending portion is exposed from the inner side surface of the case so as to oppose the light emitting element, and wherein a projecting portion projected from the inner bottom surface and inclined to the inner side surface of the case is formed on the inner side surface of the case.

Abstract: A lighting device is provided. The lighting device comprises a first substrate and a plurality of second substrates. The plurality of second substrates are separately and electrically connected to the first substrate and comprise a light emitting device.

Abstract: A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.

Abstract: A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.

Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Abstract: A microelectronic assembly can include a first microelectronic device and a second microelectronic device. Each microelectronic device has a die structure including at least one semiconductor die and each of the microelectronic devices has a first surface, a second surface remote from the first surface and at least one edge surface extending at angles other than a right angle away from the first and second surfaces. At least one electrically conductive element extends along the first surface onto at least one of the edge surfaces and onto the second surface. At least one conductive element of the first microelectronic device can be conductively bonded to the at least one conductive element of the second microelectronic device to provide an electrically conductive path therebetween.

Abstract: In accordance with the present invention, there is provided multiple embodiments of a concentrated photovoltaic receiver package or module. In each embodiment of the present invention, the module comprises a leadframe including a first section and a second section disposed in spaced relation to each other. Mounted to the first section of the leadframe is a receiver die. The receiver die is electrically connected to both the first and second sections of the leadframe. In one embodiment of the present invention, the receiver die is electrically connected to the second section of the leadframe by a plurality of conductive wires. In another embodiment of the present invention, the receiver die is electrically connected to the second section of the leadframe by a conductive bonding material. Portions of the leadframe may optionally be covered by a molded body which can be used to define an alignment feature for a light concentrating device such as a light guide or optical rod.