Abstract: An LED light source (10) comprises a ceramic substrate (20) with first and second opposed surfaces (30, 40). Pockets (50) are formed in the first surface (30) and each of the pockets includes a bottom (60) and a sidewall or sidewalls (70). A final electrical contact (105) comprised of a first electrically conductive material (57) with a coating of a second electrically conductive material (100) thereover is positioned in each of the pockets (50). An LED (110) is positioned in each of the pockets (50) and affixed to the electrical contact (105) and electrical connections (120), preferably in form of wire bonds, join the LEDs, the electrical connections (120) extending from a first LED (110) to an adjacent electrical contact (105). The ceramic substrate (20) is formed by injection molding a ceramic material and binder to form a green substrate (12) and subsequently sintering the green substrate to form the substrate (20).

Abstract: A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body comprising a cavity at an upper portion; a first and second metal layers on the cavity of the package body; an open area recessed in the cavity; a first metal plate disposed in the open area and spaced apart from the first and second metal layers; a semiconductor device disposed on the first metal plate and electrically connected to at least one of the first and the second metal layers; and a resin material in the cavity.

Abstract: A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the post with an aperture in the conductive layer, then flowing the adhesive upward between the post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal, a plated through-hole and a selected portion of the conductive layer, mounting a semiconductor device on the post, wherein a heat spreader includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Abstract: A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

Abstract: A light source module using quantum dots, a backlight unit employing the light source module, a display apparatus, and an illumination apparatus. The light source module includes a light emitting device package including a plurality of light emitting device chips, and a quantum dot sealing package disposed on the light emitting device package in a light emitting direction, and converts wavelengths of light emitted from the light emitting device chips to generate wavelength-converted light.

Abstract: To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

Abstract: In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs.

Abstract: A method of making a semiconductor chip assembly includes providing a bump and a ledge, wherein the bump includes first, second and third bent corners that shape a cavity, mounting an adhesive on the ledge including inserting the bump into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the bump with an aperture in the conductive layer, then flowing the adhesive between the bump and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal and a selected portion of the ledge, providing a heat spreader that includes the bump, then mounting a semiconductor device on the bump within the cavity, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract: A lighting device including a metal substrate to prevent temperature rise of LED chip is offered. The lighting device includes the metal substrate, an anode or cathode electrode of the LED chip disposed on the metal substrate, brazing materials connecting the LED chip and the metal substrate, and a groove formed in the anode or cathode electrode. Forming the groove can prevent an occurrence of a crack in the brazing materials. Also, a lighting device includes the metal substrate, an anode and cathode electrode of the LED chip disposed on the metal substrate and brazing materials connecting the LED chip and the metal substrate. Further, a slit is formed in the metal substrate between the anode and cathode electrode. Forming the slit in the metal substrate can prevent an occurrence of a crack in the brazing materials.

Abstract: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Abstract: An emitter device for emitting electromagnetic radiation is presented. The device includes a metallic patterned structure, and emitting media integral with the metallic patterned structure. The emitting media includes one or more emitters of omni-directional emission in nature wherein certain emission pattern. One or more parameters of the metallic patterned structure, that define a dispersion map thereof, are selected according to the emitting pattern such that the metallic patterned structure operates as a beam shaper creating resonant coupling of each emitter with a microscopic confined optical mode of the metallic patterned structure thereby enhancing by a predetermined enhancement factor the emission from the emitting media in a predetermined direction. The device thus provides predetermined directional beaming of output electromagnetic radiation wherein a predetermined angular propagation of the electromagnetic radiation emitted by the emitting media.

Abstract: A light emitting diode (LED) array including an assembly of LED packages is provided. The LED packages are mounted to a face of a substructure including a circuit board and a heat transfer plate. Each LED package includes electrical connection terminals and a thermal connection pad, the electrical connection terminals are electrically connected to respective circuit conductors of the circuit board, the thermal pads are connected to the heat transfer plate by respective thermally conductive connections, and at least one of the LED packages is tilted at an angle relative to an adjacent portion of the face of the substructure.

Abstract: A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a Zener diode, a light emitting device including a light emitting diode, a body including lead frames on which the light emitting device and the Zener diode are disposed, and provided with a cavity formed on the lead frames, a first adhesive member disposed between the Zener diode and the lead frames, and a second adhesive member disposed between the light emitting device and the lead frames, and the thickness of the second adhesive member is equal to or less than the thickness of the first adhesive member.

Abstract: An EL light-emitting element in which a lower electrode layer, an EL layer, and an upper electrode layer are stacked is formed on a substrate, and a wiring is formed on a counter substrate. Further, the substrate and the counter substrate are bonded so that the wiring is in physical contact with the upper electrode layer of the EL element. Accordingly, the wiring can serve as an auxiliary wiring for increasing conductivity of the upper electrode layer. With such an auxiliary wiring, a potential drop due to the resistance of the upper electrode layer can be suppressed even in the light-emitting device whose light-emitting portion is large.

Abstract: A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

Abstract: A flip-chip LED package includes a transparent substrate, an LED chip and a holder. The transparent substrate is formed by heating a green piece made of a mixture of glass powders and solvent. The LED chip includes a first side and an opposite second side, and two electrodes formed on the first side. The second side of the LED chip is directly attached to the transparent substrate. The holder combines to the LED chip. The holder includes two solders connected to the electrodes of the LED chip respectively. The present disclosure also relates to a method for manufacturing such flip-chip LED package.

Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.

Abstract: A liquid crystal display device (1) is provided with a gate insulating film (10) formed on an auxiliary capacitance line (9) which is formed on a glass substrate (7); a semiconductor layer (12) formed on the gate insulating film (10); a drain electrode (8) of a TFT (5) formed on the semiconductor (12); an interlayer insulation film (13) formed on the gate insulating film (10) so as to cover the semiconductor layer (12); and a pixel electrode (14) formed on the interlayer insulating film (13) and electrically connected to the drain electrode (8) via a contact hole (15) formed in the interlayer insulating film (13). Further, the drain electrode (8) is arranged at an approximate center (15a) of the contact hole (15).

Abstract: A layered semiconductor light emitting device includes a plurality of semiconductor light emitting elements each of which includes a light emitting region that converts electricity into light and emits the light. The semiconductor light emitting elements are layered in a layering direction perpendicular to the light emitting regions, and are bonded to each other via a planarizing layer having electrical insulation property. The planarizing layer includes a first planarizing region disposed above or below the light emitting regions of the semiconductor light emitting elements in the layering direction and formed of a first planarizing film having higher refractive index than air, and a second planarizing region other than the first planarizing region and formed of a second planarizing film having lower refractive index than the first planarizing film. In the layering direction, the upper semiconductor light emitting element transmits light emitted by the lower semiconductor light emitting element.

Abstract: Apparatus may be provided including a high power light emitting diode (LED) unit, at least one printed circuit board, and an interfacing portion of a heat sink structure. The high power LED unit includes at least one LED die, at least one first lead and at least one second lead, and a heat sink interface. The at least one printed circuit board includes a conductive pattern configured to connect both the at least one first lead and the at least one second lead to a current source. The interfacing portion of the heat sink structure is that portion through which a majority of heat of the heat sink interface is transmitted. The interfacing portion is directly in touching contact with a majority of a heat transfer area of the heat sink interface.

Abstract: The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

Abstract: A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate. A lead frame for a light-emitting device and a light-emitting device package having a wide viewing angle and a wide radiation width by surface processing are provided.

Abstract: A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.

Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

Abstract: A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TSV) and a second active TSV connected to the first and the second active bond pads, respectively. The carrier chip further includes a dummy TSV therein, which is electrically coupled to the first active bond pad, and is configured not to conduct any current when a current flows through the LED chip.

Abstract: A liquid crystal display includes: a first substrate including a first through-hole; a second substrate facing the first substrate and including a second through-hole corresponding to the first through-hole; a sealant coupling the first substrate and the second substrate; a liquid crystal layer disposed between the first substrate and the second substrate; a spacer disposed between the first substrate and the second substrate; and a supporting assistance member including a third through-hole connected to the first through-hole and the second through-hole, wherein the supporting assistance member includes a first supporting assistance member made with the same material as the spacer.

Abstract: Disclosed is a package substrate for an optical element, which includes a base substrate, a first circuit layer formed on the base substrate and including a mounting portion, an optical element mounted on the mounting portion, one or more trenches formed into a predetermined pattern around the mounting portion by removing portions of the first circuit layer so that the first circuit layer and the optical element are electrically connected to each other, and a fluorescent resin material applied on an area defined by the trenches so as to cover the optical element, and in which such trenches are formed on the first circuit layer so that the optical element and the first circuit layer are electrically connected to each other, thus maintaining the shape of the fluorescent resin material and obviating the need to form a via under the optical element. A method of manufacturing the package substrate for an optical element is also provided.

Abstract: An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact region (10) is mounted on the surface (8) of the semiconductor chip (7) remote from the carrier element (3). The connection region (5) is electrically conductively connected to the contact region (10) by way of an unsupported conductive structure (13). A method for manufacturing an opto-electronic component is described.

Abstract: A light emitting diode package includes a first lead frame comprising a first hole cup, a second lead frame comprising a second hole cup and disposed to face the first lead frame with a gap disposed between the first lead frame and the second lead frame, a first light emitting diode chip disposed on the first hole cup, and a second light emitting diode chip disposed on the second hole cup, the first lead frame comprising a first enlarged region formed between the gap and the first hole cup, and the second lead frame comprising a second enlarged region formed between the gap and the second hole cup.

Abstract: An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second surface. The LED chip is mounted on the first surface of the heat dissipating plate and has an interface engaging with the first surface of the heat dissipating plate. The first surface of the heat dissipating plate has an area greater than that of the interface. The second surface of the heat dissipating plate is attached to the base.

Abstract: In a lead frame used for manufacturing a semiconductor device by forming a circuit pattern group including unit lead frames having plural upper side terminal parts in the periphery of a semiconductor element mounting region in one line or plural lines and an outer frame surrounding the circuit pattern group in a state of having a gap in a lead frame material and then mounting a semiconductor element every the unit lead frame and carrying out necessary wiring and enclosing the entire surface of the circuit pattern group in which the semiconductor element is mounted and a part of the outer frame with a resin from an upper surface side and further etching from a lower surface side and forming lower side terminal parts joined to the upper side terminal parts of the circuit pattern group, the circuit pattern group and the outer frame are had and the inner edge of the outer frame is formed in an uneven portion in plan view and bonding between the resin and the outer frame is enhanced.

Abstract: A light emitting module includes a dielectric substrate, a solar cell unit, a metal pattern layer, light emitting units, and a power storage component. The dielectric substrate has a first surface and a second surface opposite to the first surface. The solar cell unit is positioned on the first surface. The metal pattern layer is positioned on the second surface. The light emitting units is positioned on the metal pattern layer. The power storage component includes a power charge port electrically coupled to the solar cell unit, and a power supply port electrically coupled to the metal pattern layer.

Abstract: The method includes the steps of preparing an epitaxial wafer by forming a multilayer semiconductor structure on a main surface of a substrate; forming stripe electrodes and bonding pads on the multilayer semiconductor structure with the bonding pads being respectively electrically connected to the stripe electrodes; forming a projection portion on the multilayer semiconductor structure; forming laser diode (LD) bars by cutting the epitaxial wafer; arranging the LD bars on a support surface such that a side surface thereof is oriented normal to the support surface, and disposing spacers between the LD bars; and forming a coating film on the side surface. The projection portion has a height, measured from the main surface of the substrate, greater than a height of the stripe electrodes. Furthermore, the laser diode bar has at least one projection portion.

Abstract: A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer.

Abstract: A light emitting diode package for one or more light emitting diodes mounted on a substrate. A frame is disposed on at least a portion of the substrate and substantially surrounds, but does not contact, the light emitting diode. The frame is substantially transparent to light emitted from the light emitting diode and includes one or more first wavelength converting materials. The wavelength converting materials, which may be one or more phosphors, convert at least a portion of light emitted at the emission wavelength to different wavelength. A cover covers the light emitting diode within the frame. The cover layer includes one or more second wavelength converting materials differing from the first one or more wavelength converting materials in wavelength converting material concentration or in converted light wavelength or in combinations of wavelength converting materials.

Abstract: A method for manufacturing an LED module, including steps of: providing a heat conductive plate and an LED die, the heat conductive plate defining a concave groove therein; forming an electrode circuit layer on the heat conductive plate around the concave groove; plating one metal layer on a bottom of the concave groove of the heat conductive plate, and plating another metal layer on the LED die; eutectically bonding the metal layer of the heat conducting plate and the metal layer of the LED die together to form into an eutectic layer; forming electrodes on the LED die, and connecting the electrodes with the electrode circuit layer; and encapsulating the LED die in the concave groove.

Abstract: A light-emitting device package. The light-emitting device package includes a lead frame comprising a plurality of separate leads; a molding member that fixes the plurality of leads and comprises an opening portion that exposes the lead frame; and a light-emitting device chip that is attached on the lead frame in the opening portion and emits light through an upper surface portion of the light-emitting device chip, wherein a height of the molding member is lower than a height of the light-emitting device chip with respect to the lead frame.

Abstract: Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a silicate luminophore and a fluorinated coating arranged on the silicate luminophore.

Abstract: A flip chip light emitting device (LED) package and a manufacturing method thereof are provided.

Abstract: A chip system and method includes a photonics chip and an electrical integrated circuit (IC) flip-chip coupled to the photonics chip to form an optochip. The IC or the photonics chip includes an array of bond pads for attachment to the other. The optochip has an array of bond pads for subsequent attachment to a carrier where the photonics chip includes an exposed edge to connect with at least one waveguide.

Abstract: A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 ?m directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1?r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1?e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: The present invention relates to a glass laminate including a glass substrate and a supporting glass plate, in which a surface of the glass substrate and a surface of the supporting glass plate are directly contacted to each other, in which each of the surface of the glass substrate and the surface of the supporting glass plate that are contacted to each other is a smooth flat surface, and the both surfaces are closely adhered.

Abstract: Light sources are disclosed herein. One embodiment comprises a substrate having a first surface and a second surface located opposite the first surface. At least one first electrically conductive layer is affixed to the first surface of the substrate and partially covering the first surface of the substrate. At least one second electrically conductive layer is affixed to the first surface of the substrate and partially covering the first surface of the substrate. A light emitter is affixed to the first surface of the substrate in an area not covered by either of the at least one first electrically conductive layer or the at least one second electrically conductive layer. The substrate may be thinner in the area where the light emitter is affixed than in the areas where the first and second electrically conductive layers are affixed. A heat sink may be attached to the second surface of the substrate.

Abstract: Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.

Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.