Abstract: An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is electrically connected to the first electrode and the second electrode of the substrate. The light transmission layer comprises two parallel transparent plates and a fluorescent layer sandwiched between the two transparent plates. The LED package further includes a transparent encapsulation layer sealing the LED chip therein, and in one embodiment, the light transmission layer is located on the encapsulation layer and in another embodiment, the encapsulation layer also seals the light transmission layer therein. A method for manufacturing the LED package is also provided.

Abstract: The invention provides a wafer-bonded semiconductor device wherein warpage generated when wafers are bonded is reduced at a low cost ad through a simple process. In a method for manufacturing a wafer-bonded semiconductor device by bonding a first wafer substrate and a second wafer substrate together, the method of the invention includes a first step of forming in advance bonding members having a bonding function when heated on the wafer-bonded surface sides of the first wafer substrate and the second wafer substrate, respectively; a second step of supplying flux paste containing two or more kinds of powdery materials having reactivity to the surfaces of the bonding members formed in the first step; and a third step of causing excitation to have the flux paste supplied in the second step start reacting.

Abstract: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.

Abstract: An organic optoelectronic device includes a substrate, an anode, a cathode, an active region comprising an organic material, an encapsulation that isolates the active region from an ambient environment, wherein the encapsulation comprises a housing, and a first hermetically sealed electrical path through the housing.

Abstract: A semiconductor light emitting device includes: a base portion having a concave portion formed in one of major surfaces thereof; and a light emitting element mounted on a bottom surface of the concave portion of the base portion. The base portion comprises a side wall portion that surrounds the light emitting element. The light emitting element is covered with a resin portion filled in the concave portion. At least a part of an upper surface of the resin portion is positioned closer to the bottom surface of the concave portion than an upper surface of the side wall portion.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method of fabricating a plurality of components using wafer-level processing can include bonding first and second wafer-level substrates together to form a substrate assembly, such that first surfaces of the first and second substrates confront one another, the first substrate having first electrically conductive elements exposed at the first surface thereof, forming second electrically conductive elements contacting the first conductive elements, and processing the second substrate into individual substrate elements. The second conductive elements can extend through a thickness of the first substrate and can be exposed at a second surface thereof opposite the first surface. The processing can include trimming material to produce the substrate elements at least some of which have respective different controlled thicknesses between first surfaces adjacent the first substrate and second surfaces opposite therefrom.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a body, an insulating layer over a surface of the body, at least one electrode over the insulating layer, a light emitting diode connected to the electrode, and a reflective layer over the insulating layer.

Abstract: In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of an LED chip is connected, the bonding section being made of a material allowing the semiconductor light emitting element to be soldered on the reflective layer without flux. Consequently, it is possible to realize a high-quality semiconductor light emitting device which has a semiconductor light emitting element firmly attached to a bonding surface and which is capable of emitting light while reducing deterioration in luminosity and color tone shift.

Abstract: An electronic package includes a substrate wafer having front and rear faces and a through passage having a front window and a blind cavity communicating laterally with the front window. A receiving integrated circuit chip is mounted on the rear face and includes an optical sensor situated opposite the blind cavity. A transparent encapsulant extends above the optical sensor and at least partially fills the through passage. An emitting integrated circuit chip, embedded in the transparent encapsulant, includes an optical emitter of luminous radiation. The emitting integrated circuit chip may be mounted to the front face or within the through passage to the receiving integrated circuit chip. The substrate wafer may further include a second through passage. The receiving integrated circuit chip further includes a second optical sensor situated opposite the second through passage. A cover plate is mounted to the front face at the second through passage.

Abstract: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.

Abstract: A light-emitting element mounting substrate includes an insulative substrate, a pair of wiring patterns formed on one surface of the substrate, and a pair of filled portions including a metal filled in a pair of through-holes to contact the pair of wiring patterns and to be exposed on a surface of the substrate opposite to the one surface, the pair of through-holes penetrating through the substrate in a thickness direction. The pair of filled portions includes a protruding portion that protrudes outward from the pair of wiring patterns when viewed from the one surface side of the substrate.

Abstract: LED lighting systems and methods of manufacture, which include one or more of the following: (1) a solid state active heat sink for cooling one or more LED chips; (2) a front end power supply providing high voltage to the active heat sink component; (3) a front end power supply that provides a relatively low voltage load to a plurality of LED chips; (4) a front end hybrid power supply with both a high and low voltage output, wherein the high voltage is at least 2 kV higher than the low voltage output; (5) an over-mold encapsulating the front end components, wherein the over-mold is provided by a reaction injection molding process; (6) a digital micro-minor device (DMD) for providing pixilated light, color mixing, and intensity control; and (7) an optic having quantum dots (QDs), wherein the light output of the DMD activates for the QDs.

Abstract: An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and a lower chamber communicating with the upper chamber. The lower chamber is gradually expanded along a top-to-bottom direction of the LED, and the upper chamber is gradually expanded along a bottom-to-top direction of the LED. The encapsulant substantially fills the lower chamber and the upper chamber.

Abstract: Components and methods containing one or more light emitter devices, such as light emitting diodes (LEDs) or LED chips, are disclosed. In one aspect, a light emitter device component can include inner walls forming a recess defining an opening such that surface area outside of the opening of the recess is less than or equal to a threshold ratio of overall surface area. In one aspect, the light emitter device component can include a ceramic body mounted directly or indirectly on the ceramic body. Components disclosed herein can result in improved light extraction and thermal management.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: Optocoupler packages and methods of making the same. An exemplary package comprises a substrate having a first surface, a second surface opposite the first surface, and a body of electrically insulating material disposed between the first and second surfaces; a first optoelectronic device embedded in the body of electrically insulating material of the substrate and disposed between the substrate's first and second surfaces, the first optoelectronic device having a first conductive region and a second conductive region; a second optoelectronic device embedded in the body of electrically insulating material of the substrate and disposed between the substrate's first and second surfaces and optically coupled to the first optoelectronic device, the second optoelectronic device having a first conductive region and a second conductive region; and a plurality of electrical traces disposed on one or both surfaces of the substrate and electrically coupled to the conductive regions of the optoelectronic devices.

Abstract: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film.

Abstract: An integrated circuit package includes an integrated circuit with one or more on-chip inductors. A package cover covers the integrated circuit. A magnetic material is provided between the integrated circuit and the package cover. The magnetic material may be a soft magnetic thin film. The magnetic material may be affixed to the package cover by an adhesive. The magnetic material may be formed directly on the package cover by one of deposition, sputtering or spraying. The magnetic material may be affixed to the integrated circuit.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

Abstract: A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other.

Abstract: A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined side surface are respectively connected to the top surface and the lower surface. The illuminant structure is disposed on the top surface.

Abstract: A first method comprises providing a plurality of organic light emitting devices (OLEDs) on a first substrate. Each of the OLEDs includes a transmissive top electrode. The plurality of OLEDs includes a first portion of OLEDs and a second portion of OLEDs that is different from the first portion. The first method further includes depositing a first capping layer over at least the first portion of the plurality of OLEDs such that the first capping layer is optically coupled to at least the first portion of the plurality of OLEDs. A second capping layer is deposited over at least the second portion of the plurality of OLEDs such that the second capping layer is optically coupled to the second portion of the plurality of OLEDs but not the first portion of the plurality of OLEDs.

Abstract: To provide a wireless identification semiconductor device provided with a display function, which is capable of effectively utilizing electric power supplied by an electromagnetic wave. The following are included: an antenna; a power source generating circuit electrically connected to the antenna; an IC chip circuit and a display element electrically connected to the power source generating circuit; a first TFT provided in the power source generating circuit; a second TFT provided in the IC chip circuit; a third TFT provided in the display element; an insulating film provided to cover the first to third TFTs; a first source electrode and a first drain electrode, a second source electrode and a second drain electrode, and a third source electrode and a third drain electrode which are formed over the insulating film; and a pixel electrode electrically connected to the third source electrode or the third drain electrode.

Abstract: A semiconductor device package is provided. The semiconductor device package includes a laminate comprising a first metal layer disposed on a dielectric film; a plurality of vias extending through the laminate according to a predetermined pattern; one or more semiconductor devices attached to the dielectric film such that the semiconductor device contacts one or more vias; a patterned interconnect layer disposed on dielectric film, said patterned interconnect layer comprising one or more patterned regions of the first metal layer and an electrically conductive layer, wherein a portion of the patterned interconnect layer extends through one or more vias to form an electrical contact with the semiconductor device. The patterned interconnect layer comprises a top interconnect region and a via interconnect region, wherein the package interconnect region has a thickness greater than a thickness of the via interconnect region.

Abstract: A display device including: a first substrate with a pixel switch and drivers mounted thereon; a second substrate disposed in facing relation to the first substrate; a material layer held between the first substrate and the second substrate and having peripheral edges sealed by a seal member, the material layer having an electrooptical effect; and a semiconductor chip mounted as a COG component on the first substrate, the semiconductor chip having a control system configured to control the drivers; wherein the semiconductor chip having a thickness equal to the total thickness of the seal member and the second substrate or larger than the thickness of the seal member and smaller than the total thickness.

Abstract: A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.

Abstract: A substrate for mounting light-emitting elements to mount a plurality of double wire type light-emitting elements so as to be connected in parallel, comprising a substrate main body made of a sintered product of an inorganic material powder and having a mounting surface for light-emitting elements; wiring conductors provided so as to be connected to electrodes of the light-emitting elements in one-to-one at a position out of a portion between the light-emitting elements, on the mounting surface; a reflection film formed on the mounting surface excluding the wiring conductors and a periphery thereof; and an overcoat glass film provided on the mounting surface so as to cover the entire reflection film including its edge and so as to exclude the wiring conductors and a periphery thereof, and a light-emitting device using it.

Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Abstract: Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material.

Abstract: An LED lighting apparatus and method provide efficient illumination in a downward and forward direction toward a preferential side, by mounting a plurality of LED devices to the apparatus in at least one horizontal row oriented perpendicularly to the downward and forward direction; mounting a vertical reflector behind and parallel to the horizontal row; and orienting the LED apparatus such that the vertical reflector extends substantially straight downward. A two axis orthogonally symmetric secondary lens is associated with each LED and the vertical reflector has a specular reflective front surface facing the LEDs. The vertical reflector may be curved around ends of the row of LEDs. Also it may be continued further downward, on the outside of a cover lens, by a backlight shield with a straight linear outer edge that extends horizontally across an uplight ring shield. The backlight shield may have a specular or diffuse reflecting front surface.

Abstract: The present disclosure provides a flip chip type light emitting diode which comprises a substrate and a light emitting diode chip. The substrate comprises a body, a plurality of third pads, a fourth pad, a first electrode, a second electrode, a plurality of first vias, and a second via. The body has a first surface and a second surface opposite to the first surface. The third pads and the fourth pad are disposed on the first surface of the body. The first electrode and the second electrode are disposed on the second surface of the body. The first vias traverse through the body and are each electrically coupled to a respective one of the third pads and the first electrode. The second via traverses through the body and is electrically coupled to the fourth pad and the second electrode.

Abstract: Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.

Abstract: A light emitting device is provided that includes a light emitting structure (including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer), a conductive layer, an insulation layer, and a current blocking layer. The conductive layer may have a first conductive portion that passes through the second conductive type semiconductor layer and the active layer to contact the first conductive type semiconductor layer. The insulation layer may have a first insulation portion that surrounds the first conductive portion of the conductive layer. The current blocking layer may substantially surround the first insulation portion of the insulation layer, the first insulation portion provided between the current blocking layer and the first conductive portion.

Abstract: A method of manufacturing a semiconductor device includes attaching a first semiconductor substrate to a support substrate, and thinning the first semiconductor substrate to form a thinned semiconductor layer. The method additionally includes integrating a functional element with the thinned semiconductor layer, and forming at least one through-connect through the thinned semiconductor layer.

Abstract: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area which are electrically isolated are disposed on the metal base. The array chip is disposed on the first electrode area, on which multiple matrix-arranged semiconductor light-emitting elements and at least one wire bond pad adjacent to the light-emitting elements are disposed. The light-emitting element is a VCSEL element, an HCSEL element or an RCLED element. The metal wires are connected between the wire bond pad and the second electrode area to transmit power signals. Between the bottom surface and the first electrode area is disposed a conductive adhesive to bond and facilitate electrical connection between the two.

Abstract: A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.

Abstract: The present invention discloses a semiconductor optoelectronic converting system and the fabricating method thereof, the system comprises a supporting module, a heat pipe, a power converting module and a heat-dissipating plate module. The main features of the present invention are that the supporting module has an accommodating space for disposing the heat pipe, and wherein the supporting module and the heat pipe have a common surface for disposing the power converting module thereon. Furthermore, the present invention further decreases the heat resistant therebetween and improves the heat conducting rate and further capable of becoming a rechargeable self-sufficiency lighting system.

Abstract: A light emitting diode (LED) module having a structure capable of effectively dissipating heat generated from an LED chip thereof, and a backlight unit including the same are disclosed. The LED module includes a base made of a metal material, an insulating layer provided on the base, a circuit layer provided on the insulating layer, an LED package provided on the circuit layer, and a bonding layer extending through the insulating layer and the circuit layer, to connect the LED package to the base.

Abstract: Disclosed are a method for fabricating a GaN LED array device for optogenetics and a GaN LED array device fabricated thereby.

Abstract: A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes that protrude from a bottom face of the package. The package has, on the bottom face, two side face convex components provided on the side face sides and a center convex component provided at a center. The outer lead electrodes are housed in a concave components defined by the side face convex components and the center convex component. The side face convex component has groove provided on the side face.

Abstract: A light source manufacturing apparatus, which manufactures a light source device by adhering a laser device and a wavelength converting device that converts the laser light emitted by the laser device to laser light of a different wavelength, includes a first stage that holds the wavelength converting device, a second stage that holds the laser device, a power meter that measures the amount of laser light emitted by the wavelength converting device, a light receiving device that detects the drive waveform of the laser light, and a controlling unit that changes relative positions of the first stage and the second stage in such a manner that the amount of laser light measured by the power meter is a predetermined value or greater and the drive waveform detected by the light receiving device falls within a reference range.

Abstract: A light emitting diode device includes: a cathode lead frame; an anode lead frame which is electrically insulated from the cathode lead frame; a light emitting diode chip which is electrically connected to the cathode lead frame and the anode lead frame respectively; a synthetic resin member which forms an indentation receiving the light emitting diode chip and fixes the cathode lead frame and the anode lead frame; and a metallic heat-radiation/light-reflection member which covers at least a portion of the indentation and covers an upper surface of the synthetic resin member.

Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

Abstract: A LED light source includes one or more LED light source arrangements, wherein each of the LED light source arrangements includes a LED member having a first light emitting surface and an opposed second light emitting surface, and two fluorescent members on top of the first and second light emitting surfaces of the LED member respectively to retain the LED member in position such that the illumination generated from the LED member is capable of passing through the two fluorescent members from the two light emitting surfaces respectively. The LED light source arrangement provides illumination at an angle greater than 180° and direct effective heat dissipation at all sides of the LED member.

Abstract: A laser diode system is disclosed in which a substrate made of a semiconductor material containing laser diodes is bonded to a substrate made from a metallic material without the use of any intermediate joining or soldering layers between the two substrates. The metal substrate acts as an electrode and/or heat sink for the laser diode semiconductor substrate. Microchannels may be included in the metal substrate to allow coolant fluid to pass through, thereby facilitating the removal of heat from the laser diode substrate. A second metal substrate including cooling fluid microchannels may also be bonded to the laser diode substrate to provide greater heat transfer from the laser diode substrate. The bonding of the substrates at low temperatures, combined with modifications to the substrate surfaces, enables the realization of a low electrical resistance interface and a low thermal resistance interface between the bonded substrates.

Abstract: A light emitting diode (LED) package includes a substrate, a plurality of LED chips, and a plurality of electrode pairs. The LED chips are disposed on the substrate, and each of the LED chips is electrically isolated from one another. The electrode pairs are disposed on the substrate, and each of the electrode pairs is electrically isolated from one another. The number of the electrode pairs is equal to the number of the LED chips, and each of the electrode pairs electrically connects one of the LED chips corresponding thereto.