Abstract: A display panel apparatus has a structure which is less likely to seal a planarizing film even when an electrode plate is provided on the planarizing film, and the display panel apparatus includes: a planarizing film formed on a substrate; a pixel formed on the planarizing film and including: a lower electrode; an organic layer; and an upper electrode; an auxiliary electrode electrically insulated from the lower electrode and electrically connected to the upper electrode; a display section including a plurality of the pixels; an electrode plate electrically connected to the auxiliary electrode and arranged to cover the planarizing film outside the display section; and a power supply section electrically connected to the electrode plate, and the electrode plate has a hole exposing a part of a surface of the planarizing film.

Abstract: Disclosed is a light-emitting device (1) including a light-emitting element (2) emitting primary light, and a light converter (3) absorbing a part of the primary light emitted from the light-emitting element (2) and emitting secondary light having a longer wavelength than the primary light. The light converter (3) contains a green light-emitting phosphor (4) and a red light-emitting phosphor (5). The green light-emitting phosphor (4) is composed of at least one phosphor selected from a divalent europium-activated oxynitride phosphor substantially represented by the following formula: EuaSibAlcOdNe and a divalent europium-activated silicate phosphor substantially represented by the following formula: 2(Ba1-f-gMIfEug)O.SiO2, while the red light-emitting phosphor (5) is composed of at least one phosphor selected from tetravalent manganese-activated fluoro-tetravalent metalate phosphors substantially represented by the following formulae: MII2(MIII1-hMnh)F6 and/or MIV(MIII1-hMnh)F6.

Abstract: A light emitting device (LED) module, and manufacturing method of the same, which may be applied to various applications is provided. The LED module may be miniaturized by directly mounting an LED and a lens unit on a substrate, and price competitiveness may be enhanced by lowering a fraction defective and increasing yield of the LED module. In a method of manufacturing an LED module, an operation may be minimized and simplified by directly mounting LEDs and a plurality of lens units having various shapes, collectively forming the plurality of lens units, and by performing the operation on a wafer level. A heat radiation characteristic may be enhanced through use of a metallic material as a substrate and a bump.

Abstract: The present invention relates to a light emitting device package and a lighting device with the same. The light emitting device package comprises a package body having a first surface and a second surface, wherein the first surface has a mounting portion positioned thereon, and a through hole provided therein to pass through the first surface and the second surface, at least one pair of first electrodes on the first surface, at least one pair of second electrodes on the second surface connected to the first electrodes through the through hole respectively, a light emitting device on the mounting portion connected to the first electrodes electrically, a light wavelength conversion layer positioned on the light emitting device, and a protective layer on the light wavelength conversion layer for sealing the mounting portion.

Abstract: The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.

Abstract: A light emitting device (1) includes a LED chip (10) as well as a mounting substrate (20) on which the LED chip (10) is mounted. Further, the light emitting device (1) includes a cover member (60) and a color conversion layer (70). The cover member (60) is formed to have a dome shape and is made of a translucency inorganic material. The color conversion layer (70) is formed to have a dome shape and is made of a translucency material (such as, a silicone resin) including a fluorescent material excited by light emitted from the LED chip (10) and emitting light longer in wavelength than the light emitted from the LED chip (10). The cover member (60) is attached to the mounting substrate (20) such that there is an air layer (80) between the cover member (60) and the mounting substrate (20). The color conversion layer (70) is superposed on a light-incoming surface or a light-outgoing surface of the cover member (60).

Abstract: A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.

Abstract: A fluorescence powder spraying device capable of detecting instantly color temperature of white light in a manufacturing process, comprising: a spraying region, provided with a movable nozzle and an LED component-to-be-sprayed; a measuring region, provided with a light source and a light detector; and a monitor plate, which can be moved in said spraying region and said measuring region. Said monitor plate undergoes at least a fluorescence powder spraying process with said LED components-to-be-sprayed in said spraying region, to form at least a fluorescence powder layer, and in said measuring region, use said light source to agitate said fluorescence powder layer on said monitor plate, and use said light detector to measure color temperature of white light, to detect speedily color temperature of said fluorescence powder layer, hereby raising. yield of LED component reaching the target color temperature.

Abstract: A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.

Abstract: The invention relates to a lighting (1) device comprising a light source (2) and a wavelength converting element (7), which comprises a phosphor compounded with a polymer. The phosphor contains a metal-ion activator which is excitable via a partially forbidden electronic transition. The phosphor and the polymer being chosen such that the difference in their refractive index is smaller than 0.1. Due to this choice, scattering in the wavelength converting element (7) remains at minimum. Interesting wavelength converting elements (7) are obtained when using phosphors comprising specific Mn(IV)-activated fluoride compounds and specific fluorine-containing polymers.

Abstract: A reflecting resin sheet provides a reflecting resin layer at the side of a light emitting diode element. The reflecting resin sheet includes a release substrate and the reflecting resin layer provided on one surface in a thickness direction of the release substrate. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be capable of being in close contact with the light emitting diode element.

Abstract: A phosphor which emits light having high brightness, serves as an excellent orange or red phosphor whose light brightness is less decreased when exposed to an excitation source contains a crystal phase having the chemical composition expressed by the general formula [1]: (1?a?b)(Ln?pMII?1-pMIII?MIV?N3).a(MIV?(3n+2)/4NnO).b(AMIV?2N3)??[1] wherein Ln? represents a metal element selected from the group consisting of lanthanoids, Mn, and Ti; MnII? represents a divalent metal element except the Ln? element; MIII? represents a trivalent metal element; MIV? represents a tetravalent metal element; A represents a metal element selected from the group consisting of Li, Na, and K; 0<p?0.2; 0?a, 0?b, a+b>0, 0?n, and 0.002?(3n+2)a/4?0.9.

Abstract: The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.

Abstract: A self-cooling emitter is a light emitting element embedded within a thermally conductive luminescent element which functions as a thermal cooling means and wavelength conversion of the light emitting element. The thermally conductive luminescent element exhibits a bulk thermal conductivity greater than 1 W/m/K such that there is sufficient thermal spreading of the heat generated by the light emitting element.

Abstract: A light emitting device package capable of emitting uniform white light and a method for manufacturing the same are disclosed. The light emitting device package includes a package body, an electrode formed on at least one surface of the package body, a light emitting device mounted on the package body, and a phosphor layer enclosing the light emitting device while having a uniform thickness around the light emitting device.

Abstract: An LED array comprises a base layer, at least one LED disposed on the base layer, and a diffusion layer including a luminescent material. The diffusion layer covers the at least one LED and the base layer in such a way that light emitted from the at least one LED passes through the diffusion layer.

Abstract: A light-tuning method is provided. In the method, a filter material is first selected for filtering out unwanted light of a specific wavelength to obtain a transmittance spectrum. The transmittance spectrum is multiplied by an eye sensitivity function to obtain a filtered spectrum. The filtered spectrum has a wavelength range between 450 nm and 650 nm. According to a full width at half maximum (FWHM) wavelength range of the filtered eye sensitivity function, a phosphor is selected and a light-emitting spectrum of the phosphor is determined so that between the light-emitting spectrum of the phosphor and the filtered eye sensitivity function is an optimal matching degree.

Abstract: An encapsulating sheet is stuck to a substrate mounted with a light emitting diode to encapsulate the light emitting diode. The encapsulating sheet includes an encapsulating material layer in which an embedding region is defined, the embedding region for embedding the light emitting diode from one side surface of the encapsulating material layer; a first phosphor layer laminated on the other side surface of the encapsulating material layer; and a second phosphor layer laminated on one side surface of the encapsulating material layer so as to be spaced apart from the embedding region.

Abstract: Provided is an insulating substrate which includes an aluminum substrate and an anodized film covering a whole surface of the aluminum substrate and in which the anodized film contains intermetallic compound particles with a circle equivalent diameter of 1 ?m or more in an amount of up to 2,000 pcs/mm3. Also provided is a method for manufacturing the insulating substrate which includes an anodizing treatment step for anodizing the aluminum substrate. The anodized film of the insulating substrate covering the whole surface of the aluminum substrate contains intermetallic compound particles with a circle equivalent diameter of 1 ?m or more in an amount of up to 2,000 pcs/mm3.

Abstract: A phosphor has the general formula (M2x,M3y,M4z)mM1O3X(2/n), wherein M1 represents at least one element including at least Si and selected from the group consisting of Si, Ge, Ti, Zr, and Sn, M2 represents at least one element including at least Ca and selected from the group consisting of Ca, Mg, Cd, Co, and Zn, M3 represents at least one element including at least Sr and selected from the group consisting of Sr, Ra, Ba, and Pb, X represents at least one halogen element, M4 represents at least one element including at least Eu2+ and selected from the group consisting of rare-earth elements and Mn, m is in the range 1?m?4/3, n is in the range 5?n?7.

Abstract: A light-emitting diode (LED) package including a substrate, an LED chip, a polarizer, and a supporter is provided. The LED chip is disposed on the substrate. The polarizer is disposed above the LED chip. The supporter is disposed on the substrate for supporting the polarizer.

Abstract: Disclosed are a light emission device comprising an LED element and a wavelength conversion section, the LED element emitting light of a specific wavelength and the wavelength conversion section converting the light emitted from the LED element to light of a specific wavelength, featured in that the wavelength conversion section is composed of a ceramic layer which has been formed employing, as a raw material, polysilazane containing a phosphor and inorganic fine particles with a particle size smaller than the phosphor.

Abstract: The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6?pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.

Abstract: An LED includes a first pedestal and may be fabricated by coating a first phosphor layer on the LED, thinning the first phosphor layer to expose the first pedestal, forming a second pedestal on the first pedestal, coating a second phosphor layer and thinning the second phosphor layer to expose the second pedestal. Alternatively, an LED having a pedestal is coated with a first phosphor layer, coated with a second phosphor layer and then planarized to expose the pedestal. Related structures are also provided.

Abstract: A side-emitting light emitting device (100) is provided, comprising at least one light emitting diode (101) arranged on a substrate (102) and facing a scattering reflector (103, 109) disposed at a distance from and extending along the extension of said substrate. The scattering reflector comprises scattering components (110) distributed in a carrier (108), and the scattering components have a refractive index being different from the refractive index of said carrier. The scattering action of the reflector gives rise to an angular redistribution in the device, which increases the chance of light exiting the device through lateral openings between the reflector and the substrate, while light is essentially prevented from being emitted through the top surface.

Abstract: An organic light emitting diode (OLED) display includes a display substrate assembly including an organic light emitting structure, an encapsulation substrate assembly disposed facing the display substrate assembly, a sealant disposed between the display substrate assembly and the encapsulation substrate assembly to seal the display substrate assembly and the encapsulation substrate assembly with each other, and a substrate deformation protection body disposed between the sealant and the organic light emitting structure.

Abstract: An exemplary embodiment of the present invention discloses a wafer level light emitting diode package that includes a first substrate having an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate, and a conductive via, a terminal on which the first substrate is arranged, a second substrate arranged on the first substrate, the second substrate including a cavity-forming opening, the cavity-forming opening exposing the electrode pattern, and a light-emitting chip arranged on the electrode pattern. The light-emitting chip is a flip-bonded light-emitting structure without a chip substrate, and the conductive via electrically connects the electrode pattern and the terminal.

Abstract: The present invention discloses an LED packaging structure, which comprises a metal housing having a cavity and two open ends, a sintered two-phase-flow heat transfer device having a flat top mounting plane, a lens disposed in the first open end, at least one LED chip mounted in the cavity of the metal housing and on the mounting plane of the two-phase-flow heat transfer device; the LED chip is connected with an electrical connection device, and wherein the sintered two-phase-flow, electrical connection device and LED chip are fixed together through a fixing base; as using a sintered two-phase-flow heat transfer device for heat dissipation, the heat generated by the LED could be expelled in time for dealing with long-term continual work, and thus the LED chip could have a longer service life; in addition, the lens used in the present invention could improve the luminescent efficiency.

Abstract: There is herein described a LED lighting device utilizing quantum dots in layers on top of an LED chip. The quantum dots layers and the LED chip are arranged with gradient refractive indices, so that the refractive index of each layer is preferably less than the refractive index of the immediately underlying layer or chip. The quantum dots with emission peaks at longer wavelengths are preferably arranged in lower layers closer to the LED chip; while the quantum dots with emission peaks at shorter wavelengths are arranged in higher layers farther from the LED chip.

Abstract: A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.

Abstract: A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

Abstract: Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.

Abstract: Provided are a display device and a method of manufacturing of the display device. The display device includes a substrate subjected to a primary preprocess; a conductor formed on the substrate and subjected to a secondary preprocess; and an insulating layer formed on the substrate and the conductor, in which the primary preprocess is performed for a surface energy of the first substrate higher than a first reference value and the secondary preprocess is performed for a surface energy of the conductor lower than a second reference value.

Abstract: An LED package and method thereof include an insulation plate, and a metal board disposed on the insulation plate and etched to form a cavity, wherein the metal board is etched to partially expose the insulation plate to form the cavity. The LED package and method also include an LED chip configured to be mounted inside the cavity, and an encapsulation member filling the cavity, wherein the encapsulation member comprises an epoxy resin. The LED package and method include a through-hole configured to be formed on the insulation plate where the LED chip is mounted. The through-hole enables portions of the LED chip to be exposed, and a metal configured to fill the through-hole to form an electrode to be electrically connected to the LED chip.

Abstract: A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.

Abstract: A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer.

Abstract: The lighting device (1) includes an LED chip (10), a mounting substrate (20) mounting thereto the LED chip, an encapsulation member (50) made of an encapsulating resin material for encapsulation of the LED chip, and a lens (60) made of a transparent resin material. The lens (60) is provided in its bottom with a recess (40) and is secured to the mounting substrate (20) with the encapsulation member (50) disposed within the recess (40). The encapsulation member (50) is confined within the recess of the lens of the transparent resin material, which minimizes a difference in the coefficient of linear expansion between the encapsulation member and the surroundings for restraining occurrence of voids in the encapsulation member at a low temperature.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.

Abstract: To improve power efficiency of a light-emitting element for white emission even when light in a wavelength range of low luminosity is utilized. As a light-emitting element for white emission, three light-emitting layers are stacked. In such a light-emitting element, the three light-emitting layers are included between a light-transmitting electrode and a light-reflecting electrode, and light emitted from each light-emitting layer is reflected on the light-reflecting electrode and is transmitted through the light-transmitting electrode. In addition, the light-emitting layer closer to the light-reflecting electrode has a shorter optical path length. Thus, the position of each light-emitting layer is limited depending on the distance from the light-reflective electrode, and the optical path length of each light-emitting layer is adjusted; therefore the light-emitting element with high power efficiency can be provided.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

Abstract: A manufacturing method of a light emitting diode (LED) and a manufacturing method of an LED module are provided. The manufacturing method of the LED may include manufacturing a plurality of LED chips, manufacturing a phosphor pre-form including a plurality of mounting areas for mounting the plurality of LED chips, applying an adhesive inside the phosphor pre-form, mounting each of the plurality of LED chips in each of the plurality of mounting areas, and cutting the phosphor pre-form to which the plurality of LED chips are mounted, into units including individual LED chips.

Abstract: A light-emitting diode (LED) package system includes a LED disposed over a surface of a substrate. A molding material covers the LED. A phosphor-containing material is disposed over and spaced from the LED by the molding material.

Abstract: A method for producing a luminous device is specified. A number of light emitting diodes each have a radiation-transmissive carrier and at least two semiconductor bodies spatially separated from one another. Each semiconductor body is provided for generating electromagnetic radiation. The semiconductor bodies can be driven separately from one another and the semiconductor bodies are arranged at the top side of the radiation-transmissive carrier on the radiation-transmissive carrier. A chip assemblage is composed of CMOS chips each of which has at least two connection locations at its top side. At least one of the light emitting diodes is connected to one of the CMOS chips. The light emitting diode is arranged, at the top side of the radiation-transmissive carrier, at the top side of the CMOS chip and each semiconductor body of the light emitting diode is connected to a connection location of the CMOS chip.

Abstract: A light-emitting device comprising a light source which emits excitation light and a fluorescent substance which absorbs the excitation light to emit light in combination, wherein a fluorescent substance comprising an ? type SiAlON represented by the general formula: (Ca?,Eu?)(Si,Al)12(O,N)16 (1.5<?+?<2.2, 0<?<0.2, O/N?0.04) as a main component and having a specific surface area of 0.1 to 0.35 m2/g is used as the fluorescent substance. This light-emitting device shows little color change due to temperature change and efficiently emits light, even when it is used in a high temperature environment, and it is especially suitable for lighting apparatuses for vehicles such as headlamps.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.