Abstract: A light emitting diode (LED) is provided. The LED comprises a semiconductor composite layer stacked laterally and a phosphor substrate. The phosphor substrate covers a lateral surface of the semiconductor composite layer.

Abstract: The invention provides a light emitting device. A light emitting device includes a light emitting component capable of radiating a light. A first fluorescent layer is capable of radiating a first light of a first wavelength range while being excited by the light. A second fluorescent layer is capable of radiating a second light of a second wavelength range while being excited by the light. A first fluorescent layer is between the light emitting component and the second fluorescent layer, and the first wavelength range is longer than the second wavelength range.

Abstract: Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.

Abstract: A light emitting diode device includes a light emitting diode chip and a nanocrystal-metal oxide monolith having a nanocrystal-metal oxide composite disposed on a light emitting surface of the light emitting diode chip.

Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

Abstract: Certain example embodiments relate to improved lighting systems and/or methods of making the same. In certain example embodiments, a lighting system includes a glass substrate with one or more apertures. An LED or other light source is disposed at one end of the aperture such that light from the LED directed through the aperture of the glass substrate exits the opposite end of the aperture. Inner surfaces of the aperture have a mirroring material such as silver to reflect the emitted light from the LED. In certain example embodiments, a remote phosphor article or layer is disposed opposite the LED at the other end of the aperture. In certain example embodiment, a lens is disposed in the aperture, between the remote phosphor article and the LED.

Abstract: A fluorescent substrate (5) of the present invention includes: a fluorescent layer (3) which emits light by receiving excitation light; and a reflecting film (10) being provided both (i) on a side surface(s) of the fluorescent layer (3) and (ii) on a surface of the fluorescent layer (3), on which surface the excitation light is incident, the reflecting film (10) (I) transmitting a component having a peak wavelength of the excitation light, and (II) reflecting a component having a peak wavelength of the light emitted from the fluorescent layer (3).

Abstract: An organic electroluminescence device includes a pair of electrodes and an organic compound layer between the pair of electrodes. The organic compound layer includes an emitting layer including a host material and a phosphorescent dopant material. The host material is selected from a compound satisfying the following formula (1) with respect to a difference ?ST between singlet energy EgS and an energy gap Eg77K at 77K and satisfying the following formula (2) with respect to the singlet energy EgS. ?ST=EgS?Eg77K<0.4 (eV)??(1) EgS?2.

Abstract: A light emitting device is configured to achieve a white color by mixing light from respective phosphors. The light emitting device includes: a light emitting element for emitting ultraviolet or short-wavelength visible light having a peak wavelength in a wavelength range of 380 to 420 nm; a first phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a peak wavelength in a wavelength range of 560 nm to 600 nm; a second phosphor excited by the ultraviolet or short-wavelength visible light to emit visible light having a complementary relationship with visible light emitted by the first phosphor; and a light transmitting member which is a light transmitting layer for covering the light emitting element, and has the first phosphor and the second phosphor dispersed therein.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process.

Abstract: Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.

Abstract: An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode.

Abstract: An alternating current (AC) white LED lighting device and a method for manufacturing the same are provided. The AC white LED lighting device consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %:30-90 wt %. Because of using afterglow luminescence materials, the light will be sustained when an excitation light source disappears, which can eliminate the influence of LED chips light output variation due to the AC fluctuation on the lighting device. And the problem of the heating of the chips also can be overcome. At the same time, the influence of temperature quenching effect and direction change of the AC current on the AC white LED lighting device is eliminated.

Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal that makes an alloy with Mg less easily than Au. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: The invention provides a light emitting device which uses a color conversion layer, with high light emission efficiency and a low driving voltage. The light emitting device includes a light emitting element having a pair of electrodes and a layer containing an organic compound sandwiched between the pair of electrodes, and a color conversion layer which absorbs light emitted from the light emitting element and emits light with a longer wavelength than a wavelength of the absorbed light. A portion of the layer containing an organic compound includes a buffer layer containing a composite material including an organic compound having a hole transporting property and a metal compound. The thickness of the buffer layer is determined so that the light emission efficiency becomes high.

Abstract: Solid state light emitting devices and/or solid state lighting devices use three or more phosphors excited by energy from a solid state source. The phosphors are selected and included in proportions such that the visible light output of such a device exhibits a radiation spectrum that approximates a black body radiation spectrum for the rated color temperature for the device, over at least a predetermined portion of the visible light spectrum.

Abstract: An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

Abstract: A polymer electroluminescent device is provided. The device includes an anode, a light-emitting layer, a cation-containing water-soluble polymer layer and a cathode formed in this order on a substrate wherein the cation-containing water-soluble polymer layer is formed by wet coating. The cation-containing water-soluble polymer layer as a secondary thin film layer is not dissolved in a solvent for the formation of the underlying light-emitting layer to prevent intermixing between the two layers, thereby enabling the formation of a multilayer structure by wet coating. In addition, the cation-containing water-soluble polymer layer attracts electrons injection from the cathode by an attractive Coulomb force to effectively increase the mobility of the electrons while blocking high-mobility holes from the anode at an interface between the light-emitting layer and the water-soluble layer. Further provided is a method for fabricating the electroluminescent device.

Abstract: A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface side and including a conductor and an insulator; and a light-blocking member provided on a side surface of the semiconductor layer and being opaque to light emitted from the light-emitting layer.

Abstract: A light emitting diode package includes a substrate with a first metal layer, a second metal layer and an insulating layer between the first metal layer and the second metal layer. A cavity is defined in the insulating layer and the second metal layer. The second metal layer surrounding the cavity is divided into a first conductive portion and a second conductive portion. An LED chip is positioned inside the cavity and on an upper surface of the first metal layer. The LED chip has two electrodes electrically connected to the first conductive portion and the second conductive portion respectively. The cavity is filled with an encapsulation to cover the LED chip. A method for manufacturing the LED package is also disclosed.

Abstract: An object is to provide a white light emitting lamp 1 comprising: a semiconductor light emitting element 2 which is placed on a board 3 and emits ultraviolet light or blue light; and a light emitting portion that is formed so as to cover a light emitting surface of the semiconductor light emitting element 2, the light emitting portion containing a blue phosphor B, a green phosphor G, a red phosphor R and a deep red phosphor DR that are excited by the light emitted from the semiconductor light emitting element 2 to respectively emit blue light, green light, red light and a deep red light, the white light emitting lamp 1 emitting white light by mixing light emission colors from the blue phosphor B, the green phosphor G, the red phosphor R and a deep red phosphor DR with one another, wherein the deep red phosphor DR has a main emission peak in a longer wavelength region than a main emission peak of the red phosphor, the red phosphor R comprises at least one component selected from: a europium-activated SiAlON ph

Abstract: The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance.

Abstract: A light-emitting device includes a circuit substrate including at least a pair of electrodes, an LED element electrically mounted on the circuit substrate, a phosphor plate disposed on an upper surface of the LED element, a diffuser plate disposed on an upper surface of the phosphor plate, and a white resin disposed on an upper surface of the circuit substrate and covering a peripheral side surface of the LED element, a peripheral side surface of the phosphor plate, and a peripheral side surface of the diffuser plate. The present invention makes it possible to obtain a planar light-emitting surface even with a plurality of LEDs, and also, a problem of color-ring occurrence caused by a phosphor may be less represented.

Abstract: Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a second light conversion material to a second, different region on the LED. A portion of the LED is exposed after applying the first and second light conversion materials.

Abstract: A light-emitting diode includes: an epitaxial substrate; a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on the lower semiconductor layer, the epitaxial units cooperating with the lower semiconductor layer to define two light-emitting sources that are capable of emitting different colors of light; and an electrode unit including a first electrode which is formed on an exposed portion of the lower semiconductor layer exposed from the epitaxial units, and at least two second electrodes each of which is formed on a corresponding one of the epitaxial units. A method for forming a light-emitting diode is also disclosed.

Abstract: A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.

Abstract: Disclosed is a light emitting device including a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode disposed on the first conductive type semiconductor layer, a second electrode disposed on the second conductivity type semiconductor layer, and a low temperature oxide film disposed on the light emitting structure, with an irregular thickness.

Abstract: To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A white light source includes: an insulating substrate; a light-emitting diode chip provided on the insulating substrate and that emits ultraviolet light with a wavelength of 330 nm to 410 nm; and a phosphor layer formed to cover the light-emitting diode chip, including a red emitting phosphor, a green emitting phosphor, and a blue emitting phosphor as a phosphor, and the phosphors are dispersed in a cured transparent resin, wherein when it is assumed that the shortest distance between a surface of the phosphor layer and a peripheral portion of the light-emitting diode chip is t(mm) and the mean free path defined by the following expression (1) is L(mm), the t and L satisfy 3.2?t/L. [Expression 1] L=1/(n×?)??(1) (n: number of phosphors per unit volume of the phosphor layer (pcs/mm3), and ?: average cross section area of a phosphor in the phosphor layer (mm2)).

Abstract: Embodiments relate to a light emitting device package. The light emitting device package comprises: a body comprising a multilayer cavity; a light emitting device in the cavity; a first phosphor layer sealing the light emitting device and comprising a first phosphor; and a second phosphor layer comprising a second phosphor on the first phosphor layer, the second phosphor and the first phosphor having a difference in the specific gravity.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.

Abstract: There is herein described a phosphor for use in LED applications and particularly in phosphor-conversion LEDs (pc-LEDs). The phosphor has a composition represented by (Y1-xCex)3(Al1-yScy)5O12 wherein 0<x<=0.04 and 0<y<=0.6 and can be as applied to an LED as a transparent sintered ceramic or used in a powder form. By adjusting the composition of the phosphor, the phosphor can be made to emit light in the green to yellow regions of the visible spectrum upon excitation by a blue-emitting In—GaN LED.

Abstract: Disclosed is a light emitting device module. The light emitting device module includes a first lead frame and a second lead frame electrically separated from each other, a light emitting device electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a dam disposed at the peripheral area of the light emitting device, a resin layer surrounding the light emitting device and disposed at the inner area of the dam, and a reflective member disposed at the peripheral area of the dam and including an inclined plane formed on at least one side surface thereof.

Abstract: The invention relates to a casting composition based on a transparent epoxy or silicone resin (1), in particular for uses in an electroluminescent component (3), which preferably emits white light. The casting composition serves as diffusion barrier for moisture or water molecules through the use of glass and/or silica particles (2).

Abstract: In a light emitting device, one hundred or more bar-like structured light emitting elements (210) each having a light emitting area of 2,500? ?m2 or less are placed on a mounting surface of one insulating substrate (200), so that the light emitting device fulfills little variation in luminance, long life, and high efficiency by dispersion of light emission with suppression of increase in temperatures in light emitting operations.

Abstract: A method is provided for producing a luminescence conversion element (4), in particular for an optoelectronic component. In the method a raw material (1) is provided, which is intended for further processing to yield the ceramic material and which contains luminescent material particles and a binder material. A blank is molded by injecting the raw material (1) into a closed mold (3). The blank is released from the mold (3). The binder material is removed from the blank. The blank is sintered to yield the luminescence conversion element (4), wherein the luminescent material particles are bonded together and/or with further particles of the raw material to yield the ceramic material. A luminescence conversion element and an optoelectronic component are additionally provided.

Abstract: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare blue-light LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. In one embodiment, an intermediate sheet having holes is then affixed to the bottom substrate, with the LEDs passing through the holes. A transparent top substrate having conductors is then laminated over the intermediate sheet. In another embodiment, no intermediate sheet is used. Various ways to connect the LEDs in series are described along with many embodiments. The light sheet provides a practical substitute for a standard 2×4 foot fluorescent ceiling fixture. A phosphor is used to generate white light.

Abstract: A solid state light sheet and method of fabricating the sheet are disclosed. In one embodiment, bare LED chips have top and bottom electrodes, where the bottom electrode is a large reflective electrode. The bottom electrodes of an array of LEDs (e.g., 500 LEDs) are bonded to an array of electrodes formed on a flexible bottom substrate. Conductive traces are formed on the bottom substrate connected to the electrodes. A transparent top substrate is then formed over the bottom substrate. Various ways to connect the LEDs in series are described along with many embodiments. In one method, the top substrate contains a conductor pattern that connects to LED electrodes and conductors on the bottom substrate.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first frames and second frames, the first frames and the second frames being alternately arranged and spaced from each other, a light emitting element being fixed to each of the first frames, the light emitting element being connected to an adjacent one of the second frames via a metal wire; molding a first resin on the metal plate, the first resin covering the first frame, the second frame, and the light emitting element; forming in the first resin a groove defining a resin package including the first frame, the second frame, and the light emitting element; filling a second resin inside the groove; and forming the resin package with an outer edge of the first resin covered with the second resin by cutting the second resin along the groove.

Abstract: A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.

Abstract: An encapsulating sheet includes an encapsulating resin layer and a wavelength conversion layer laminated on the encapsulating resin layer. The wavelength conversion layer is formed by laminating a barrier layer formed of a light transmissive resin composition and having a thickness of 200 ?m to 1000 ?m, and a phosphor layer containing a phosphor.

Abstract: A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres.

Abstract: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.