Abstract: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.

Abstract: Disclosed is a light-emitting device that exhibits good color rendering and highly efficiently emits white light in an incandescent bulb color range. The semiconductor light-emitting device (1) of the present invention includes: a semiconductor light-emitting element (2) that emits blue light; a green phosphor (14) that absorbs the blue light and emits green light; and an orange phosphor (13) that absorbs the blue light and emits orange light. The orange phosphor (13) produces an emission spectrum having a peak at a wavelength of equal to or greater than 590 nm but equal to or less than 630 nm and having a full width at half maximum of 130 nm or greater at the peak, the full width at half maximum of the emission spectrum of the orange phosphor (13) being broader than a full width at half maximum of an emission spectrum of the green phosphor (14). The orange phosphor (13) exhibits an absorptance having a peak wavelength of 420 nm or greater. ABS(530) and ABS(MAX) satisfy a relation, ABS(530)/ABS(MAX)<0.

Abstract: A method for packaging LEDs includes steps of: forming a substrate with a rectangular frame, a plurality of first and second electrode strips received within the frame and alternately arranged along a width direction of the frame; forming a carrier layer on each pair of the first and second electrode strips, the carrier layer defining a plurality of recesses; arranging an LED die in each recess and electrically connecting the LED die with first and second electrodes; forming an encapsulation in each recess to cover the LED die; and cutting the first and second electrode strips along the width direction of the frame to obtain a plurality of separated LED packages each including the first and second electrodes, the LED die, the encapsulation and a part of the carrier layer.

Abstract: A semiconductor light emitting device (A) includes a lead frame (1) having a constant thickness, a semiconductor light emitting element (2) supported by the lead frame (1), a case (4) covering part of the lead frame (1) and a light transmitting member (5) covering the semiconductor light emitting element (2). The lead frame (1) includes a die bonding pad (11a) and an elevated portion (11b). The die bonding pad (11a) includes an obverse surface on which the semiconductor light emitting element (2) is mounted, and a reverse surface exposed from the case (4). The elevated portion (11b) is shifted in position from the die bonding pad (11a) in the direction normal to the obverse surface of the die bonding pad (11a).

Abstract: An object of the present invention is to realize an OLED capable of attaining high luminescence luminance and easy to manufacture. An organic electroluminescence device (1) of the present invention includes a luminescent layer (7) between an anode (3) and a cathode (9). The luminescent layer (7) contains an organic luminescent material. The organic electroluminescence device includes: a hole transportation layer (6) formed between the anode (3) and the luminescent layer (7); a metal nano particle layer between the anode (3) and the hole transportation layer (6), the metal nano particle layer being a layer in which metal nano particles (5) are dispersedly distributed. The metal nano particle layer is such that gaps between the metal nano particles (5) dispersedly distributed are filled with a hole transportation material. The metal nano particles (5) causes resonance with excited electrons in the luminescent layer (7), thereby reinforcing the luminescence by surface plasmon.

Abstract: A solid state white light emitting device includes a semiconductor chip producing near ultraviolet (UV) energy. The device may include a reflector forming and optical integrating cavity. Phosphors, such as doped semiconductor nanophosphors, within the chip packaging of the semiconductor device itself, are excitable by the near UV energy. However the re-emitted light from the phosphors have different spectral characteristics outside the absorption ranges of the phosphors, which reduces or eliminates re-absorption. The emitter produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the emitter may exhibit color temperature in a range along the black body curve.

Abstract: An LED package comprises an encapsulation layer, an LED die and two electrodes. The LED die is capable of emitting a first light beam with a first wavelength, and, respectively, electrically connecting to the two electrodes. The encapsulation layer covers the LED die, and comprises a luminescent conversion element and a light-compensating element. A heat exhaustion of the luminescent conversion element is converse to that of the light-compensating element.

Abstract: A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

Abstract: Disclosed is a light-emitting diode package according to an embodiment, including; a body having a cavity formed therein, a lead frame placed in the cavity; and a light emitting diode electrically connected to the lead frame while having a slope angle relative to the bottom surface of the cavity, wherein a light emitting part and a non-light emitting part are present on the light emitting diode, and wherein a connection part is provided in a region of the cavity to be connected to at least a region of the non-light emitting part.

Abstract: Provided herein are phosphor compositions that include a YAG phosphor that is substituted with gallium, such as YaCebAlcGadOz, wherein a, b, c, d and z are positive numbers. Also provided are solid state light emitting devices that include a YAG phosphor that is substituted with gallium.

Abstract: A three dimensional (3-D) light-emitting-diode (LED) stack and method of manufacturing the same, comprising: a substrate; at least a first LED, stacked on said substrate; and at least a second LED, stacked on said first LED, such that energy gap of said first LED is smaller than energy gap of said second LED. In said stack mentioned above, a material of larger energy gap capable of emitting light of shorter wavelength can be penetrated by lights emitted by another material of smaller energy gap capable emitting lights of longer wavelength, such that lights are mixed together and then emitted, and said materials are put into a three dimensional stack arrangement, to form a brand new light emitting device of mixed light, so as to emit lights as required.

Abstract: A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Abstract: The present disclosure provides a method of patterning a phosphor layer on a light emitting diode (LED) emitter. The method includes providing at least one LED emitter disposed on a substrate; forming a polymer layer over the at least one LED emitter; providing a mask over the polymer layer and the at least one LED emitter; etching the polymer layer through the mask to expose the at least one LED emitter within a cavity having polymer layer walls; and coating the at least one LED emitter with phosphor.

Abstract: A light emitting device package is disclosed. The light emitting device package includes a light emitting device disposed on a first lead frame, the light emitting device having an electrode pad on an upper surface thereof, a first wire to electrically interconnect a second lead frame spaced apart from the first lead frame and the electrode pad, and a first bonding ball disposed on the second lead frame, the first bonding ball spaced apart from a first contact point, which is in contact with the first wire and the second lead frame, wherein the first bonding ball is disposed between the first wire and the second lead frame to electrically interconnect the first wire and the second lead frame.

Abstract: To provide a light emitting device which emits high-luminance, uniform white light with reduced variations in luminance, a light emitting element 101 is mounted on a substrate 105 and covered with a wavelength conversion layer 106 of uniform thickness, and then a light scattering layer 107 made of a translucent resin containing a light reflecting material is formed. As the light scattering layer 107, a high density region 109 in which a density of the light reflecting material is high is formed immediately above a central part of a light emitting surface of the light emitting element 101, and a low density region 110 in which the density of the light reflecting material is low is formed around a region immediately above the central part of the light emitting surface of the light emitting element. A translucent resin layer 108 is formed on the light scattering layer 107.

Abstract: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.

Abstract: The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains a luminescent material a Mn4+-activated fluoride compound having a garnet-type crystal structure. The Mn4+-activated fluoride compound preferably answers the general formula {A3}[B2-x-yMnxMgy] (Li3) F12-dOd, in which formula A stands for at least one element selected from the series consisting of Na+ and K+ and B stands for at least one element selected from the series consisting of Al3+, B3+, Sc3+, Fe3+, Cr3+, Ti4+ and In3+, and in which formula x ranges between 0.02 and 0.2, y ranges between 0.0 (and incl. 0.0) and 0.4 and d ranges between 0 (and incl. 0) and 1. As the luminescent materials of the described type and structure have high stability and low sensitivity towards humid environments, they can advantageously be used as in wavelength conversion elements of LED devices.

Abstract: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided.

Abstract: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Abstract: A mixed light source comprising: a first radiation source, which emits radiation in the red spectral range; an excitation source, which contains a III-V semiconductor material; and a conversion substance, which, during the operation of the mixed light source, converts the radiation of the excitation source at least partly into radiation whose color locus in the CIE chromaticity diagram lies within a polygon spanned by the coordinates (0.1609; 0.497), (0.35; 0.6458), (0.558; 0.444) and (0.453; 0.415).

Abstract: There is provided a light emitting device package including a substrate having a cavity therein; alight emitting device mounted on a bottom surface of the cavity; a first wavelength conversion part including a first phosphor for a wavelength conversion of light emitted from the light emitting device and covering the light emitting device within the cavity; and a second wavelength conversion part including a second phosphor allowing for emission of light having a wavelength different to that of the first phosphor and formed as a sheet on the first wavelength conversion part.

Abstract: A lens according to an embodiment of the present invention may include a first depression and a second depression having predetermined patterns in a lower portion of the lens, and a phosphor layer and the lens may be collectively formed by disposing the lens after spraying a phosphor rather than separately forming the phosphor on the LED chip during a manufacture of the LED module. Accordingly, a production tolerance, and the like of an LED module may be removed to improve yield, and a manufacturing process of the LED module may be simplified. A lens may have an upper portion formed in advance in one of a hemispherical shape, an oval shape, and a batwing shape having a concave central portion, thereby implementing a customized lens according to a predetermined application.

Abstract: A luminescent particle includes a luminescent compound that is configured to perform a photon down conversion on a portion of received light. The luminescent compound includes a host compound material and an activator material that is combined with the host compound material. The activator material is provided in a quantity that limits a conversion efficiency of the luminescent compound to limit a decrease in the decrease in luminous intensity of light emitted from the luminescent compound and thus provide a given color shift of the a combined emission wavelength from a non-excited state to a steady-state excited condition.

Abstract: A method for forming wavelength-conversion LED encapsulant structure includes forming an LED encapsulant structure body, forming a layer of a wavelength-conversion material on a first surface, disposing the first surface to cause the wavelength-conversion material to be in contact with a surface region of the LED encapsulant structure body, applying a pressure between the first surface and the surface region of the LED encapsulant structure body, and causing at least a portion of the wavelength-conversion material to be at least partially embedded in the surface region of the LED encapsulant structure body.

Abstract: A light emitting device includes a body having a recess; a barrier section protruding upward over a bottom surface of the recess and dividing the bottom surface of the recess into a plurality of regions; a plurality of light emitting diodes including a first diode disposed in a first region of the bottom surface of the recess and a second diode disposed in a second region of the bottom surface of the recess; a plurality of lead electrodes spaced apart from each other in the recess and selectively connected to the light emitting diodes; wires connecting the lead electrodes to the light emitting diodes; a resin layer in the recess; and at least one concave part in the barrier section. The concave part has a height lower than a top surface of the barrier section and higher than the bottom surface of the recess and the wires are provided in the concave part to connect the lead electrodes to the light emitting diodes disposed in opposition to each other.

Abstract: The invention relates, inter alia, to an opto-electronic device having at least two electrodes (10, 15) and at least one light-emitting layer (EML) (12) arranged between the electrodes (10, 15), which comprises an electroluminescent organic material which emits light having a first wavelength spectrum, characterised in that at least one layer (1, 2, 5, 6) which comprises at least one colour converter is arranged between at least one of the at least one light-emitting layer (EML) and at least one electrode. The invention furthermore relates to a process for the production of an opto-electronic device of this type, and to the use of an opto-electronic device of this type as lamp or in a display.

Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

Abstract: The invention relates to compounds of the formula (I), A2-0.5y-?EuxSi5N8-yOy (I), where A stands for one or more elements selected from Ca, Sr, Ba, and x stands for a value from the range 0.005 to 1, and y stands for a value from the range 0.01 to 3, to mixtures thereof, to a process for the preparation of these phosphors and mixtures, and to the use thereof as conversion phosphors.

Abstract: A light emitting device comprises a substantially planar light transmissive substrate having a light emitting surface and an opposite surface. The substrate is configured as a light guiding medium. The light emitting device also comprises at least one phosphor material disposed as a layer on the light emitting surface with a plurality of window areas and at least one source of excitation radiation of a first wavelength positioned adjacent to at least one peripheral edge of the substrate. The source is configured to couple excitation radiation into the substrate such that it is waveguided within the substrate by total internal reflection. Additionally, the light emitted by the device from the light emitting surface comprises first wavelength radiation and second, longer wavelength photoluminescent light emitted by the phosphor layer as a result of excitation by the source.

Abstract: A light-emitting semiconductor device includes a lead frame having lead electrodes, a reflector arranged with the lead frame, and a light-emitting semiconductor chip accommodated in the reflector and having electrodes connected to the lead electrodes by a flip-chip bonding method, wherein: a gap between the lead frame and the light-emitting semiconductor chip is filled with a cured underfill material, and a cured silicon oxide film of 0.05 to 10 ?m thickness is formed covering surfaces of the light-emitting semiconductor chip and reflector.

Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

Abstract: The present invention provides a Light Emitting Diode (LED) package, comprising a Printed Circuit Board (PCB), an LED mounted on the PCB, a pillar placed higher than the LED around the LED on the PCB, a transparent plate disposed on the pillar, spaced apart from the LED, and configured to transmit light emitted from the LED, and a fluorescent layer formed on a surface of the transparent plate, facing the LED, and conformably coated with a substance for converting the light emitted from the LED into white light by changing a wavelength of the light, wherein an electrical pad of the LED and an electrical pad of the PCB are electrically connected to each other, and the LED and the fluorescent layer are spaced apart from each other.

Abstract: There is provided a light emitting device package including: a substrate having a cavity formed therein; a heat sink provided on a bottom surface of the cavity to be adjacent to an inner wall of the cavity; a light emitting device mounted on the heat sink; and a phosphor layer provided within the cavity and covering the heat sink and the light emitting device.

Abstract: The present invention provides an ink jet printable phosphor ink composition for LED packaging that enables precision control of the amount and position of phosphor layers on the LED device or the LED device packaging. The ink includes both a UV-curable resin component and a thermally curable resin component. A phase-separation component prevents phase separation of the UV-curable resin component and the thermally curable resin component. Phosphor particles on the order of less than approximately 2 microns are uniformly dispersed throughout the ink composition. The phosphor ink composition is deposited through either thermal or piezoelectric ink jet printing; a thin layer is deposited in a desired pattern. UV curing (and, optionally, thermal curing) is used to fix each layer followed by subsequent deposition and curing. In this manner, undesirable phosphor settling does not occur and layers are selectively built up to form precise phosphor distributions.

Abstract: Disclosed are a dispensing method and a dispensing apparatus for dispensing a coating material over an object to be applied by a dispensing device within a dispensing chamber including a top plate, a bottom plate and side plates, in which a fresh air inlet and an exhaust outlet are formed in an upper portion and a lower portion of the dispensing chamber, respectively; at least a discharge hole of the dispensing device is exposed to within the upper portion of the dispensing chamber; an object mounting unit is set to be exposed to within the dispensing chamber from the side of the bottom plate. At least one of the dispensing device and an object mounting unit are movable linearly, and at least one of the dispensing device and an object mounting unit is moved by a driving mechanism disposed outside the dispensing chamber, thereby positioning the dispensing device with respect to the object to be applied and dispensing the coating material over the object with a dispensing device.

Abstract: An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.

Abstract: A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength ?1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength ?2, which is greater than the first wavelength ?1.

Abstract: Light emitting devices include a light emitting diode (“LED”) and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Abstract: Disclosed are a white LED lighting device and an optical lens used in it. The white LED lighting device comprises a white LED and an optical lens. The white LED includes: a LED chip which emits blue light: and a fluorescent material which is excited by emission light of the LED chip and converts a wavelength into fluorescence of a complementary color of blue. The optical lens is formed with a scattering light guide which is given uniform scattering power in terms of a volume. The scattering light guide includes scattering particles for the scattering efficiency in a short wavelength range of light to be higher than that in a long wavelength range of light.

Abstract: An LED package structure and a method of fabricating the same. The LED package structure includes: a package unit including a submount with a cavity, and a light emitting chip disposed in the cavity; a first light-pervious element disposed in the cavity; a multi-layered dam structure concentrically disposed on the first light-pervious element or around a rim of the cavity; a first light-pervious packaging material filled in the dam structure; and a second light-pervious element that combines with the dam structure. Accordingly, the multi-layered dam structure provides an advantage of eliminating gaps and overcomes the problem resulting from the uneven thickness of the first light-pervious packaging material used in the prior technique, thereby ensuring high illumination efficiency and enhanced airtightness.

Abstract: A semiconductor light emitting device comprises a circuit, a reflector, an LED chip, an encapsulation layer and a luminescent conversion layer. The encapsulation layer comprises an annular projection formed outside the encapsulation layer. The circuit and the LED chip are covered by the encapsulation layer, wherein the annular projection of the encapsulation layer is inside the reflector; the encapsulation layer also fills in an interspace between two electrodes of the circuit. Therefore the semiconductor light emitting device is rigid and strongly resistant to water vapor and similar contaminants.

Abstract: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Abstract: An illuminating means, including a radiation source for emitting electromagnetic radiation in the optical range, a support base, and an electrode arrangement with a first and at least a second electrode. The radiation source is disposed on the support base and connected by connecting wires to the electrode arrangement so as to be electrically conductive, and the radiation source is provided in the form of a first and at least a second semiconductor component. The first electrode is connected to the first semiconductor component via a first contact point, and the second electrode is connected to the second semiconductor component via a second contact point, so as to be electrically conductive. The distance of the first contact point from a center point or a line of symmetry of the support base is different from the distance of the second contact point from the center point or line of symmetry.

Abstract: A process for producing a color conversion filter uses an ink jet recording method, which can form a color conversion layer at a desired position without the need to separately form partition walls, and a process for producing an organic EL display. The process for producing a color conversion filter includes forming a black matrix having a plurality of opening parts on a transparent substrate, forming at least two types of color filter layers independently of each other on a black matrix to which dissimilar color filter layers are adjacent, to form a partition wall, at least two of the color filter layers being superimposed on top of each other, and forming a color conversion layer by ink jet recording onto at least one of the color filter layers.

Abstract: Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.

Abstract: An LED light source (10) comprises a ceramic substrate (20) with first and second opposed surfaces (30, 40). Pockets (50) are formed in the first surface (30) and each of the pockets includes a bottom (60) and a sidewall or sidewalls (70). A final electrical contact (105) comprised of a first electrically conductive material (57) with a coating of a second electrically conductive material (100) thereover is positioned in each of the pockets (50). An LED (110) is positioned in each of the pockets (50) and affixed to the electrical contact (105) and electrical connections (120), preferably in form of wire bonds, join the LEDs, the electrical connections (120) extending from a first LED (110) to an adjacent electrical contact (105). The ceramic substrate (20) is formed by injection molding a ceramic material and binder to form a green substrate (12) and subsequently sintering the green substrate to form the substrate (20).

Abstract: A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 ?m. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.

Abstract: The present disclosure provides an LED package and a method for fabricating the same. The LED package includes a base, at least one LED chip mounted on the base, a transparent wall disposed on the base and extending around the LED chip, and a fluorescent material disposed inside of the transparent wall and covering upper and side surfaces of the LED chip.

Abstract: A LED package structure includes a substrate unit, a light emitting unit, a package unit, and a phosphor unit. The substrate unit includes a substrate body. The light emitting unit includes at least one light emitting element disposed on and electrically connected to the substrate body. The package unit includes a package resin body formed on the substrate body to cover the light emitting element. The package resin body has a light output surface formed on the top surface thereof to guide light beams generated by the light emitting element to leave the package resin body. The phosphor unit includes a prefabricated phosphor cap disposed on the substrate body to enclose the package resin body. The prefabricated phosphor cap is separated from the package resin body by a predetermined distance to form a receiving portion between the prefabricated phosphor cap and the package resin body.

Abstract: The present invention relates to an LED die package, which has a light-emitting diode die having a sapphire layer, a first doped layer doped with a p- or n-type dopant, and a second doped layer doped with a different dopant from that doped in the first doped layer. A surface of the sapphire layer opposite to the surface on which the first doped layer is disposed is formed with generally inverted-pyramidal-shaped recesses and overlaid with a phosphor powder layer. Each of the first and the second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is disposed and formed with exposure holes for exposing the electrodes. The exposure holes are each filled with an electrically conductive linker.