Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

Abstract: The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.

Abstract: System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages that include thermal pad structures for dissipating heat generated by LED devices. In particular, thermal pad structures with large surface areas are used to allow heat to transfer. In certain embodiments, thick thermally conductive material is used to improve overall thermal conductivity of an LED package, thereby allowing heat generated by LED devices to dissipate quickly. Depending on the application, thermal pad structure, thick thermal conductive layer, and reflective surface may be individually adapted in LED packages or used in combinations. There are other embodiments as well.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer.

Abstract: Aspects include electrodes that provide specified reflectivity attributes for light generated from an active region of a Light Emitting Diode (LED). LEDs that incorporate such electrode aspects. Other aspects include methods for forming such electrodes, LEDs including such electrodes, and structures including such LEDs.

Abstract: A light emitting diode (LED) chip package including: a package body; an LED chip mounted on the package body and emitting an excited light; a phosphor layer including a phosphor absorbing the excited light and emitting a wavelength conversion light obtained by converting a wavelength of the excited light and a phosphor resin mixed with the phosphor; and a reflector layer including a reflector formed between the LED chip and the phosphor layer, transmitting the excited light to the phosphor layer, and reflecting the wavelength conversion light from the phosphor layer, and a reflector resin mixed with the reflector.

Abstract: A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate. A lead frame for a light-emitting device and a light-emitting device package having a wide viewing angle and a wide radiation width by surface processing are provided.

Abstract: A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

Abstract: The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

Abstract: A light emitting unit includes a substrate, a first reflecting element, a light-emitting diode (LED), and a second reflecting element. At least one part of the substrate is light permeable. The LED is disposed between the substrate and the first reflecting element, and the first and second reflecting elements are disposed on two opposite sides of the substrate, respectively.

Abstract: To provide a display device with low power consumption. The display device includes a plurality of pixels each having a light-emitting element having a structure in which light emitted from a light-emitting layer is resonated between a reflective electrode and a light-transmitting electrode, wherein no color filter layers are provided or color filter layers with high transmittance are provided in pixels for light with relatively short wavelengths (e.g., pixels for blue and/or green), and a color filter layer is selectively provided in pixels for light with a long wavelength (e.g., pixels for red), and thereby maintaining color reproducibility and consuming less power.

Abstract: A semiconductor, room-temperature, electrically excited, two-photon device with thick optically active layer is provided. The intrinsic AlGaAs active layer is sandwiched between two intrinsic graded waveguide layers having increased aluminum concentration at increased distance from the active layer. The waveguide structure is sandwiched between two cladding layers of high aluminum concentration, n and p doped respectively. The structure is epitaxially grown on a substrate and further comprises other layers such as buffer, graded layers and contact layers. An etched ridge provides lateral confinement for light. The device provides two-photons gain and may be used in light sources, optical amplifiers, pulse compressors and lasers.

Abstract: A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.

Abstract: A light emitting diode (LED) packaging structure comprises a base, a LED chip and a packaging colloid. The LED chip is disposed in the base. The packaging colloid comprises a first optical resin material and at least one second optical resin material. The first optical resin material is transparent and packages the LED chip. The second optical resin material is disposed to a side of the first optical resin material. The second optical resin material is doped with a second fluorescent-powder. By disposing multilayered second optical resin materials, the fluorescent-powder is far from the LED chip to prevent the fluorescent-powder from being heated to cause light attenuation, thereby extending the service life of the LED chip.

Abstract: A transparent directional polarized light-emitting device includes a transparent anode and a transparent cathode, a radiation-emitting layer between the anode and the cathode, an optically active reflective layer with a reflection band that matches a chirality and at least partially encompasses a wavelength band of radiation emitted from the radiation-emitting layer, the optically active light blocking layer located on a side of the radiation-emitting layer, and a transparent substrate adjacent to the optically active reflective layer.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer located between an optical plate and the chip so as to extend from the optical plate toward the chip, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate.

Abstract: A Plastic Leaded Chip Carrier (PLCC) package is disclosed. The PLCC package includes a lead frame with an integrated reflector cup. The reflector cup is directly connected to a heat sink, which improves the ability of the PLCC package to distribute heat away from the light source that is provided in the reflector cup.

Abstract: A light emitting diode includes a heat conductive substrate and a light emitting structure formed on the substrate. A transparent conductive layer is formed on the light emitting structure and an electrode pad is deposited on the transparent conductive layer. The light emitting diode further comprises a metal layer and a buffer layer set between the light emitting structure and the transparent conductive layer. The metal layer is set on the central portion of the top surface of the light emitting structure away from the substrate and forms a Schottky connection with the light emitting structure. The buffer layer surrounds the metal layer and forms an ohmic connection with the light emitting structure.

Abstract: A light-emitting element with which a reduction in power consumption and an improvement in productivity of a display device can be achieved is provided. A technique of manufacturing a display device with high productivity is provided. The light-emitting element includes an electrode having a reflective property, and a first light-emitting layer, a charge generation layer, a second light-emitting layer, and an electrode having a light-transmitting property stacked in this order over the electrode having a reflective property. The optical path length between the electrode having a reflective property and the first light-emitting layer is one-quarter of the peak wavelength of the emission spectrum of the first light-emitting layer. The optical path length between the electrode having a reflective property and the second light-emitting layer is three-quarters of the peak wavelength of the emission spectrum of the second light-emitting layer.

Abstract: A Plastic Leaded Chip Carrier (PLCC) package is disclosed. The PLCC package enables a narrow viewing angle without requiring a second lens. In particular, the PLCC package is provided with a reflector cup having multiple stages where the geometry or some other characteristic of one stage is different from the geometry or some other characteristic of another stage.

Abstract: First to third light-emitting elements each including a reflection electrode layer, a transflective electrode layer, and a light-emitting layer provided therebetween are provided. In the first light-emitting element, the light-emitting layer is in contact with the reflection electrode layer and the transflective electrode layer. In the second light-emitting element, a first transparent electrode layer is in contact with the reflection electrode layer, the light-emitting layer is in contact with the first transparent electrode layer and the transflective electrode layer. In the third light-emitting element, a second transparent electrode layer is in contact with the reflection electrode layer, the light-emitting layer is in contact with the second transparent electrode layer and the transflective electrode layer. The first transparent electrode layer is different form the second transparent electrode layer in thickness.

Abstract: An organic EL light-emitting device with excellent total luminous flux or with reduced emission unevenness and low power consumption is provided. Light from an organic EL layer in a region sandwiched between a light-transmitting conductive film of a lower electrode and a light-reflecting conductive film of an upper electrode is selectively emitted to the lower electrode side, and extracted outside by a first optical structure body. Light from the organic EL layer in a region sandwiched between a light-reflecting conductive film of the lower electrode and a light-transmitting conductive film of the upper electrode is selectively emitted to the upper electrode side, and extracted outside by a second optical structure body. The first optical structure body and the second optical structure body are formed on different planes and can overlap with each other; thus, light from the organic EL layer can be efficiently extracted outside.

Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is to the electrode having a reflective property, the longer the wavelength of light emitted from the light-emitting layer is.

Abstract: Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.

Abstract: In a FC-mounted semiconductor light-emitting element, rise of a forward voltage is suppressed and light emission output is increased.

Abstract: The present invention is intended to realize a light emitting element which is easy to fabricate, is efficient, and is able to emit light in a uniform polarization state enabling the achievement of high luminance.

Abstract: A light emitting device is provided. The light emitting device includes a reflective layer, a conductive dielectric layer on the reflective layer and a semiconductor layer including an active layer on the conductive dielectric layer. And a distance “d” between the reflective layer and a light emitting portion of the active layer corresponds to a constructive interference condition. And the conductive dielectric layer includes a lower conductive dielectric layer on the reflective layer; an intermediate layer on the lower conductive dielectric layer and an upper conductive dielectric layer on the intermediate layer.

Abstract: A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer.

Abstract: A solid state lighting package is provided. The package comprising at least one LED element positioned on a top surface of a substrate or a submount capable of absorbing light emitted by the at least one LED element; and a reflective layer, the reflective layer covering at least a portion of the top surface of the substrate or the submount, whereby at least of portion of the light emitted by the LED element is reflected by the reflective layer. A method of manufacturing a solid state lighting package comprising the reflective layer, and a method of increasing the luminous flux thereof, is also provided.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.

Abstract: This disclosure provides systems, methods and apparatus for backside patterning of structures in electromechanical devices. In one aspect, backside patterning of supports in an electromechanical device allows the size of the supports to be reduced, increasing the active region of the electromechanical device. In electromechanical devices having black masks, the black masks may include a partially transmissive aperture aligned with the supports which enable backside patterning of the support through the black mask. The black mask may include an interferometric black mask in which an upper reflective layer has been patterned to form an aperture extending therethrough.

Abstract: A light emitting device which includes: a base body; a conductive member disposed on the base body; a light emitting element placed on the conductive member; and a translucent member disposed above the light emitting element. A surface of the translucent member is formed in a lens shape, and when a portion formed in the lens shape of the translucent member on a surface of the conductive member is perspectively seen from above, an area other than a portion where the light emitting element is placed is coated with an insulating filler to form a light reflection layer.

Abstract: A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided.

Abstract: A vertical cavity surface emitting laser (VCSEL) system and method of fabrication are included. The VCSEL system includes a gain region to amplify an optical signal in response to a data signal and a first mirror arranged as a partially-reflective high-contrast grating (HCG) mirror at an optical output of the VCSEL system. The VCSEL system also includes a second mirror. The first and second mirrors can be arranged as a laser cavity to resonate the optical signal. The VCSEL system further includes a doped semiconductor region to generate a current through the first mirror in response to a voltage signal to substantially alter the reflectivity of the first mirror to provide Q-switching capability of the VCSEL system.

Abstract: An LED package comprises: an LED chip having an optically active layer on a substrate, a platform, including a central membrane of which the LED chip is mounted in close thermal contact to the material of the platform, the thickness of the membrane being less than 3/10 the chip dimension (L) the thickness of the supporting frame being more than twice the membrane thickness, typically 10 times and possibility up to 25 times which is integrally formed with the membrane, is substantially larger than the thickness of the membrane, wherein the membrane is provided with at least an electrically isolated through contact filled with electrically conducting material and connected to one of the electrodes of the LED chip.

Abstract: Provided is a light source unit in which locating components are mounted on a substrate together with LEDs forming a light emitting portion, and with this, the light source unit can be more easily replaced, and the number of components can be reduced.

Abstract: A light emitting element includes an optical semiconductor layer (2) obtained by sequentially laminating a first semiconductor layer (2a), a light emitting layer (2b), and a second semiconductor layer (2c); a first electrode layer (3) that is electrically connected to the first semiconductor layer (2a); and a second electrode layer (7) that is electrically connected to the second semiconductor layer (2c). The second electrode layer (7) includes a conductive reflecting layer (4) positioned on the second semiconductor layer (2c), and a conductive layer (5) having a plurality of through holes (6) that are positioned on the conductive reflecting layer (4) and penetrate therethrough in a thickness direction thereof.

Abstract: A semiconductor light emitting device (A) includes a semiconductor light emitting element (2) including a light emitting layer (22), a lead (1) formed with a reflector (11) that surrounds the semiconductor light emitting element (2), a light transmitting resin (4) covering the semiconductor light emitting element (2). The reflector (11) of the lead (1) includes a recess (12) at the bottom surface. The semiconductor light emitting element (2) is mounted to a bottom surface of the recess (12), with the light emitting layer (22) positioned outside the recess (12). A highly heat conductive material (3) having a thermal conductivity higher than that of the light transmitting resin (4) is loaded between the semiconductor light emitting element (2) and the recess (12).

Abstract: A light emitting diode apparatus comprises a substrate having a circuit pattern, a reflection layer disposed on the substrate, at least one light emitting element disposed on the reflection layer, a reflector disposed around the at t one light emitting element, a sealing material formed over the at least one light emitting element and a phosphor layer disposed over the sealing material. The light emitting element comprises a conductive portion electrically coupled to the circuit pattern. In one embodiment, a plurality of light emitting elements are linearly arrayed, and a spacer is disposed between every two adjacent light emitting elements.

Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

Abstract: An LED wiring board includes an insulator layer, a conductor layer (a wiring pattern layer) formed on the insulator layer, and a white reflective film which is formed on the insulator layer and which includes a white colorant and a binder thereof. The conductor layer includes a first wiring pattern and a second wiring pattern, and the white reflective film has a portion which is between the first wiring pattern and the second wiring pattern and which is thinner than both of the first wiring pattern and the second wiring pattern.

Abstract: A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light-reflective conductive particle for an anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a core particle coated with a metal material and a light-reflecting layer formed from light-reflective inorganic particles having a refractive index of 1.52 or more on a surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or more include titanium oxide particles, zinc oxide particles, or aluminum oxide particles.

Abstract: A light emitting diode package includes a base, a chip mounted on the base, and an encapsulant layer encapsulating the chip. The encapsulant layer includes a light exit face for light generated generated by the chip transmitting through. A plurality of microstructures are formed on the light exit face. Distribution of the microstructures has the following characters: a density of the microstructures is inversely proportional to a light intensity of the light at the light exit face; and a size of the microstructures is inversely proportional to the light intensity of the light at the light exit face.

Abstract: A light emitting device including a bonding layer; a barrier layer on the bonding layer; an adhesion layer on the barrier layer, in which the adhesion layer includes Pd, Au, and Sn; a reflective layer on the adhesion layer, in which the reflective layer includes Ag; an ohmic contact layer on the reflective layer, in which the ohmic contact layer includes Pt and Ag; a light emitting structure layer on the ohmic contact layer; and a passivation layer includes an insulating material on a side surface and a top surface of the light emitting structure layer.

Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the same. In one embodiment, the LED structure includes a carrying component, an LED chip, a first conductivity type electrode and a second conductivity type electrode. The carrying component includes a carrier, a sidewall disposed on the carrier and forms a carrying tank. The LED chip is fixed within the carrying tank and includes a first conductivity type semiconductor layer having a first region and a second region, an active layer and a second conductivity type semiconductor layer stacked in sequence. The LED chip further includes a second conductive finger disposed on the second semiconductor layer in the first region, and a first conductive finger disposed on the first semiconductor layer in the second region. The first electrode extends on the sidewall and the first conductive finger. The second electrode extends on the sidewall and the second conductive finger.