Abstract: Disclosed is a light emitting module including a light emitting device package having a circuit board having a cavity, an insulation substrate arranged in the cavity, with a conductive pattern formed thereon, and at least one light emitting device disposed on the insulation substrate, with being electrically connected with the conductive pattern; and a glass cover located on the light emitting device package, with lateral surfaces, a top surface and an open bottom surface, wherein the light emitting device package and the circuit board are electrically connected with each other.

Abstract: A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film.

Abstract: An LED device with improved LED efficiency is presented. A top surface of a circuit board carrying the LED die is covered with a reflective layer. The reflective surface on top of the circuit board allows the light reflected off a surface of a waveguide to be recycled by being redirected back to the waveguide.

Abstract: An LED packaging structure includes a casing, an LED chip, and a lead frame arranged in the casing, The lead frame includes a bottom portion, and a first metal side wall and a second metal side wall respectively located on two sides of said bottom portion. The LED chip is arranged on the bottom portion. Plastic layers with high reflectivity are respectively disposed on surfaces of the first metal side wall and the second metal side wall are provided with and are extended towards the direction far away from the bottom portion and joint with the casing. The LED packaging structure of the present disclosure not only provides a longer path for the moisture to permeate the inside of the LED packaging structure, but also reduces the loss of the luminous flux due to light emitted from the LED chip irradiating on the metal bracket.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a first reflective layer on the conductive support substrate, a second reflective layer in which at least portion thereof is disposed on a side surface of the first reflective layer, a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the first and second reflective layers, and an electrode on the light emitting structure. The second reflective layer schottky-contacts the light emitting structure.

Abstract: Embodiments provide a light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a metal filter of an irregular pattern on the light emitting structure, and openings between the irregular patterns in the metal filter.

Abstract: An organic light emitting display device includes a substrate having a luminescent region and a non-luminescent region, an insulation layer on the substrate, a first electrode on the insulation layer, at least one light emitting structure on the first electrode, a second electrode on the light emitting structure, and at least one reflecting structure at one of the first electrode or the second electrode around the at least one light emitting structure. The reflecting structure may be configured to reflect light back toward the luminescent region.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second conductive type semiconductor layer on the reflective layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a pad electrode on the first conductive type semiconductor layer. The reflective layer comprises a predetermined pattern.

Abstract: A laser induced thermal imaging (LITI) apparatus and a method of manufacturing an organic light emitting diode (OLED) display device using the LITI apparatus. The method of manufacturing the OLED display device using the LITI apparatus includes arranging an acceptor substrate on a substrate stage; forming a donor film on the acceptor substrate; disposing a patterned mask above the acceptor substrate; irradiating the donor film with a laser beam generated by a laser beam generator through an opening of the mask; and transferring a pattern of the donor film onto the acceptor substrate. The LITI apparatus and the manufacturing method allow a transfer layer of a donor film to be easily transferred onto a substrate by scanning a laser beam without regard to a size of the substrate.

Abstract: A light-emitting diode device includes: a substrate including first and second conductors; a light-emitting diode die including first and second polarity sides, and a surrounding surface formed between the first and second polarity sides; an insulator disposed around the surrounding surface; a transparent conductive layer extending from the second polarity side of the light-emitting diode die oppositely of the substrate, along an outer surface of the insulator, and to the second conductor; and a reflecting cup formed on the substrate to define a space with the substrate. The light-emitting diode die, the insulator and the transparent conductive layer are disposed in the space.

Abstract: A light-emitting diode device is disclosed.

Abstract: A light-emitting element mounting substrate includes an insulative substrate including a single-sided printed circuit board, a pair of wiring patterns formed on one surface of the substrate, the wiring patterns being separated with a first distance, a pair of through-holes penetrating through the substrate in a thickness direction, the through-holes being separated with a second distance, and a pair of filled portions including a metal filled in the pair of through-holes to contact the pair of wiring patterns and to be exposed on a surface of the substrate opposite to the one surface. Each of the pair of filled portions has a horizontal projected area of not less than 50% of an area of each the pair of wiring patterns.

Abstract: An electrode, which includes a magnetic material to improve the flow of charges, and an organic light emitting device using the electrode. The electrode for the organic light emitting device has an excellent charge injection property, so that it is possible to improve the efficiency of light emission of the organic light emitting device.

Abstract: An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface for emitting light of the LED package. The electrode structure is sandwiched between the first substrate and the second substrate. The LED die is mounted in the substrate and electrically connected to the electrode structure. The reflective layer is formed on an outer surface of the substrate except the emitting surface and the bulging portions. The disclosure also provides a method for manufacturing such an LED package.

Abstract: Solid state lighting (“SSL”) devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device can further include a first contact on the first semiconductor material and a second contact on the second semiconductor material and opposite the first contact. The second contact can include one ore more interconnected fingers. Additionally, the SSL device can include an insulative feature extending from the first contact at least partially into the first semiconductor material. The insulative feature can be substantially aligned with the second contact.

Abstract: An anode for an organic light emitting device which introduces a metal oxide to improve flows of charges, and an organic light emitting device using the anode. The anode for the organic light emitting device has excellent charge injection characteristics, thereby improving power consumption of the organic light emitting device.

Abstract: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film.

Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.

Abstract: Disclosed is a light emitting device module. The light emitting device module includes a first lead frame and a second lead frame electrically separated from each other, a light emitting device electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a dam disposed at the peripheral area of the light emitting device, a resin layer surrounding the light emitting device and disposed at the inner area of the dam, and a reflective member disposed at the peripheral area of the dam and including an inclined plane formed on at least one side surface thereof.

Abstract: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device.

Abstract: A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.

Abstract: Provided are a light emitting device package, a method of manufacturing the light emitting device package, and a lighting system. The light emitting device package includes a package body, an electrode layer, a reflective layer, a nanopattern metal layer, a light emitting device, and a molding part. The electrode layer is disposed on the package body. The reflective layer is disposed over the electrode layer. The nanopattern metal layer is disposed over the reflective layer. The light emitting device is displayed over the electrode layer. The molding part is disposed over the light emitting device.

Abstract: A silicone resin composition includes a cage octasilsesquioxane; a polysiloxane containing alkenyl groups at both ends containing an alkenyl group having the number of moles smaller than the number of moles of the hydrosilyl group of the cage octasilsesquioxane; a hydrosilylation catalyst; a hydroxyl group-containing polysiloxane, organohydrogenpolysiloxane, or a polysiloxane containing alkenyl groups at side chain.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first frames and second frames, the first frames and the second frames being alternately arranged and spaced from each other, a light emitting element being fixed to each of the first frames, the light emitting element being connected to an adjacent one of the second frames via a metal wire; molding a first resin on the metal plate, the first resin covering the first frame, the second frame, and the light emitting element; forming in the first resin a groove defining a resin package including the first frame, the second frame, and the light emitting element; filling a second resin inside the groove; and forming the resin package with an outer edge of the first resin covered with the second resin by cutting the second resin along the groove.

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Abstract: A three dimensional (3-D) light-emitting-diode (LED) stack and method of manufacturing the same, comprising: a substrate; at least a first LED, stacked on said substrate; and at least a second LED, stacked on said first LED, such that energy gap of said first LED is smaller than energy gap of said second LED. In said stack mentioned above, a material of larger energy gap capable of emitting light of shorter wavelength can be penetrated by lights emitted by another material of smaller energy gap capable emitting lights of longer wavelength, such that lights are mixed together and then emitted, and said materials are put into a three dimensional stack arrangement, to form a brand new light emitting device of mixed light, so as to emit lights as required.

Abstract: An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.

Abstract: A method for manufacturing an LED package, comprising steps of: providing a substrate, the substrate forming a plurality of spaced rough areas on a surface thereof, each of the rough areas forming a rough structure thereon, a block layer being provided on a remaining part of the surface of the substrate relative to the rough areas; forming a metal layer on a top surface of each rough structure; forming a reflector on the substrate, the reflector defining a cavity and surrounding two adjacent metal layers; arranging an LED chip in the cavity, the LED chip electrically connecting to the two adjacent metal layers; forming an encapsulation layer in the cavity to seal the LED; and separating the substrate from the metal layers, the encapsulation layer and the reflector.

Abstract: In one or more embodiments, display devices having electrolessly plated conductors and methods are disclosed. One such embodiment is directed to a method of forming a reflective pixel array for a display device, including forming a plurality of conductive pads, each of the conductive pads corresponding to a reflective pixel, and electrolessly plating each of the conductive pads with a reflective conductor.

Abstract: There is provided a light emitting device package including a substrate having a cavity therein; alight emitting device mounted on a bottom surface of the cavity; a first wavelength conversion part including a first phosphor for a wavelength conversion of light emitted from the light emitting device and covering the light emitting device within the cavity; and a second wavelength conversion part including a second phosphor allowing for emission of light having a wavelength different to that of the first phosphor and formed as a sheet on the first wavelength conversion part.

Abstract: According to one embodiment, a light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

Abstract: To provide a light emitting device which emits high-luminance, uniform white light with reduced variations in luminance, a light emitting element 101 is mounted on a substrate 105 and covered with a wavelength conversion layer 106 of uniform thickness, and then a light scattering layer 107 made of a translucent resin containing a light reflecting material is formed. As the light scattering layer 107, a high density region 109 in which a density of the light reflecting material is high is formed immediately above a central part of a light emitting surface of the light emitting element 101, and a low density region 110 in which the density of the light reflecting material is low is formed around a region immediately above the central part of the light emitting surface of the light emitting element. A translucent resin layer 108 is formed on the light scattering layer 107.

Abstract: A reflecting material contains a silicone resin composition prepared from a polysiloxane containing silanol groups at both ends, an ethylenic silicon compound, a silicon compound containing an epoxy group, an organohydrogenpolysiloxane, a condensation catalyst, and an addition catalyst; and a light reflecting component.

Abstract: The present disclosure provides a flip chip type light emitting diode which comprises a substrate and a light emitting diode chip. The substrate comprises a body, a plurality of third pads, a fourth pad, a first electrode, a second electrode, a plurality of first vias, and a second via. The body has a first surface and a second surface opposite to the first surface. The third pads and the fourth pad are disposed on the first surface of the body. The first electrode and the second electrode are disposed on the second surface of the body. The first vias traverse through the body and are each electrically coupled to a respective one of the third pads and the first electrode. The second via traverses through the body and is electrically coupled to the fourth pad and the second electrode.

Abstract: A nanocomposite material that is both transparent and electrically conductive is provided. The nanocomposite comprises a nanoporous matrix, preferably formed from nanoparticles, that is internally coated with a transparent conductive material to define an internal conductive path within the nanocomposite. The nanocomposite is substantially transparent over a defined spectral range that preferably includes at least a portion of the visible spectrum, and preferably comprises pores with a mean diameter of less than approximately 25 nm. A bilayer may be formed by depositing a layer of a transparent conductive material on top of a nanocomposite layer, or by depositing a second layer of a nanocomposite having different optical properties. The nanocomposites formed using a combination of sequential and/or concurrent deposition techniques are correspondingly discrete and/or continuously varying structures.

Abstract: An LED lighting apparatus and method provide efficient illumination in a downward and forward direction toward a preferential side, by mounting a plurality of LED devices to the apparatus in at least one horizontal row oriented perpendicularly to the downward and forward direction; mounting a vertical reflector behind and parallel to the horizontal row; and orienting the LED apparatus such that the vertical reflector extends substantially straight downward. A two axis orthogonally symmetric secondary lens is associated with each LED and the vertical reflector has a specular reflective front surface facing the LEDs. The vertical reflector may be curved around ends of the row of LEDs. Also it may be continued further downward, on the outside of a cover lens, by a backlight shield with a straight linear outer edge that extends horizontally across an uplight ring shield. The backlight shield may have a specular or diffuse reflecting front surface.

Abstract: An embodiment of the disclosed technology provides a pixel structure, comprising a TFT, a reflective region and a transmissive region, wherein the reflective region comprises a reflective region insulation layer, a reflection layer on the reflective region insulation layer and a reflective region pixel electrode on the reflection layer, and the transmissive region comprises a transmissive region pixel electrode, wherein the reflective region pixel electrode and the transmissive region pixel electrode form an integral structure, and the integral structure of the pixel electrodes is connected with the drain electrode of the TFT, wherein the organic layer in the reflective region is formed on an array substrate prior to a gate electrode of the TFT, and the reflection layer in the reflective region and the gate electrode of the TFT are formed in a same patterning process by using a same metal layer.

Abstract: This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device, and a light-redirecting member having an opening and a reflective surface next to the opening, wherein the opening is aligned directly above the semiconductor based light-emitting device, and the reflective surface redirects light emitted from the semiconductor-based light-emitting device to lateral directions.

Abstract: A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.

Abstract: A light emitting module with improved optical functionality and reduced thermal resistance is described, which comprises a light emitting device (LED), a wavelength converting (WC) element and an inorganic optically-transmissive thermally-conductive (OTTC) element. The WC element is capable of absorbing light generated from the LED at a specific wavelength and re-emitting light having a different wavelength. The re-emitted light and any unabsorbed light exits through at least one surface of the module. The OTTC is in physical contact with the WC element and at least partially located in the optical path of the light. The OTTC comprises one or more layers of inorganic material having a thermal conductivity greater than that of the WC element. As such, a compact unitary integrated module is provided with excellent thermal characteristics, which may be further enhanced when the OTTC provides a thermal barrier for vertical heat propagation through the module but not lateral propagation.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) an acid anhydride curing agent; (C) a curing accelerator; (D) a specific silicone resin; and (E) a specific alcohol compound.

Abstract: Light emitting devices and methods are disclosed. In one embodiment a light emitting device can include a submount and a light emission area disposed over the submount. The light emission area can include one or more light emitting diodes (LEDs), a fillet at least partially disposed about the one or more the LEDs, and filling material. The filling material can be disposed over a portion of the one or more LEDs and a portion of the fillet.

Abstract: A thermally enhanced light emitting device package includes a substrate, a chip attached to the substrate, an encapsulant overlaid on the chip, and a plurality of non-electrically conductive carbon nanocapsules mixed in the encapsulant to facilitate heat dissipation from the chip.

Abstract: D={(2?m+?L+?U)/4?}? is satisfied when an optical path length between a reflecting layer and pixel electrode and a counter electrode is D, a phase shift in reflection in the reflecting layer and pixel electrode is ?L, a phase shift in reflection in the counter electrode is ?U, a peak wavelength of a standing wave generated between the reflecting layer and pixel electrode, and the counter electrode is ?, and an integer of 2 or less is m. Here, among red, green, and blue pixel reflecting layer and pixel electrode, at least one reflecting layer and pixel electrode may be made of a different metal material from that of the other reflecting layer and pixel electrodes.

Abstract: An LED emitter uses a molded lens with phosphor material embedded in a circumferential trench to generate a batwing beam pattern. After the lens is molded over a package substrate with connected LED dies thereon, the phosphor material is molded, injected, or dispensed into a circumferential trench. The molded lens is shaped such that a majority of the light emitted by the one or more LED dies is reflected by the top surface to the side surfaces through the phosphor material.

Abstract: Disclosed is a color display device containing plural pixels on a substrate, each pixel is composed of plural sub-pixels which emit lights different in wavelength in the visible range and a white sub-pixel, the plural sub-pixels and the white sub-pixel each have a white organic electroluminescence layer interposed between an optically semitransparent reflection layer and a light reflection layer, the optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels forms a resonator having a distance for resonating emitted light, and the optical distance between the optically semitransparent reflection layer and the light reflection layer in the white sub-pixel is longer than the maximum optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

Abstract: An embodiment of the disclosed technology provides a method of manufacturing an array substrate, comprising: a first mask process of forming an inorganic material protrusion on a base substrate; a second mask process of forming a reflective region pattern, a gate line, a gate electrode branched from the gate line, and a common electrode; a third mask process of forming an active island and a data line formed and forming a source electrode connected to the data line and a drain electrode on the active island and a channel; a fourth mask process of forming an insulation material layer, treating the insulation material layer to form a planarization layer, and forming a through hole above the drain electrode; and a fifth mask process of forming a pixel electrode and connected to the drain electrode via the through hole in a reflective region.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer, wherein the reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer.