Abstract: A light emitting chip includes a substrate, an epitaxial structure comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer, a current conducting structure formed on a bottom side of the first semiconductor layer of the epitaxial structure, and heat conducting protrusions formed on a top side of the substrate. Each of the heat conducting protrusions includes a carbon nanotube layer vertically grown thereon. The heat conducting protrusions are embedded into the current conducting structure to thermally connect with the first semiconductor layer. A method for manufacturing the light emitting chip is also disclosed.

Abstract: A light-emitting diode includes a substrate (12) having an upper surface, a lower surface, and a peripheral side surface, a pair of upper electrodes (13a, 13b) provided on upper surface portions of the substrate, at least one light emitting element (14) mounted one of the pair of upper electrodes, and a covering member (18) provided on the upper surface of the substrate except the upper surface portions at which the pair of upper electrodes are provided. The covering member (18) includes a recess (19), and a light-shielding resin (20) filled in the recess (19).

Abstract: According to one embodiment, an LED package includes a first lead frame and a second lead frame, an LED chip and a resin body. The resin body covers the LED chip and the top face, a part of the bottom face and a part of the end face, of each of the first and the second lead frames, and exposes the remaining part of the bottom face and the remaining part of the end face. The resin body includes a first part and a second part. The first part is disposed between the top face of the LED chip and a region immediately above the LED chip of the top face of the resin body and transmits light emitted by the LED chip. The second part surrounds the first part and has a transmittance of the light lower than a transmittance in the first part.

Abstract: A display device capable of suppressing a reduction in color purity includes: a first resonator structure having an upper reflective member, a lower reflective member, and a light-emitting functional layer therebetween, the light-emitting functional layer including a red light-emitting layer which emits red light; a second resonator structure having an upper reflective member, a lower reflective member, and a light-emitting functional layer provided therebetween, the light-emitting functional layer including a blue light-emitting layer which emits blue light; and a third resonator structure having an part reflective member, a lower reflective member, and a light-emitting functional layer provided therebetween, the light-emitting functional layer including a green light-emitting layer which emits green light, wherein the red light-emitting layer is a common layer provided in each of the light-emitting functional layers of the first to third resonator structures.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.

Abstract: A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode.

Abstract: A method of bonding metal and glass using an optical contact bonding includes depositing an optical contact bonding medium on a surface of a metal substrate; and bonding the metal substrate on which the optical contact bonding medium is formed to a glass substrate using optical contact bonding.

Abstract: An LED package includes a chip carrier, an LED chip, and an encapsulation. The chip carrier includes a first surface, a second surface opposite to the first surface, and a side surface interconnecting the first surface and the second surface. The chip carrier includes an insulator defining two holes, and two electrodes. Each electrode includes a first contact end exposed on the first surface and separated from the side surface by the insulator, a second contact end exposed on the second surface, and a connecting portion connecting the first contact end to the second contact end; the connecting portion has a bent part received in the hole. The LED chip is mounted on the first surface of the chip carrier. The encapsulation covers the LED chip.

Abstract: A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively.

Abstract: A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Abstract: A wafer substrate bonding structure may be provided that includes: a first substrate; and a conductive thin film which is disposed on the first substrate and includes a resin and conductive corpuscles included in the resin.

Abstract: A light emitting device and a method of manufacturing thereof are disclosed. The light emitting device includes a light emitting element having first and second main surfaces opposed to each other; a wavelength converting part formed on the first main surface of the light emitting element; first and second terminals formed on the second main surface of the light emitting element; and a reflecting part formed to cover at least sides of the light emitting element and sides of the wavelength converting part. The light emitting device in which the color dispersion of white light is minimized with respect to the emitting direction of light, whereby the white light exhibits uniform characteristics and further, light emitting efficiency is improved is obtained.

Abstract: The light emitting device package includes a body provided with a cavity, a first lead frame mounted on the body, a second lead frame mounted on the body and separated from the first lead frame, and a light emitting device mounted in the cavity and disposed between the first lead frame and the second lead frame, the light emitting device is formed by sequentially stacking a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, the sequentially stacking direction of the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer is parallel with the bottom surface of the cavity, the first lead frame includes a first connection part electrically connected to the first conductivity-type semiconductor layer, and the second lead frame includes a second connection part electrically connected to the second conductivity-type semiconductor layer.

Abstract: A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract: There are provided light-emitting layer provided on transparent substrate and emitting light of a specific wavelength, mirror layer formed on a light exit side of light-emitting layer and including a function of reflecting light emitted from light-emitting layer, reflecting layer provided on a side of substrate in a manner to interpose light-emitting layer between mirror layer and reflecting layer; and a diffusion layer that diffuses light emitted from light-emitting layer is disposed between mirror layer and reflecting layer.

Abstract: A light emitting diode (LED) structure and method for making a light emitting diode are disclosed. The structure comprises deep trench metal electrodes between which electroluminescent material is disposed on the sidewalls of the electrodes, forming a series of luminescent diode elements stacked horizontally on a substrate. The method for fabricating the light emitting diode structure can be used for a wide variety of electroluminescent materials.

Abstract: According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

Abstract: There are provided light-emitting layer provided on transparent substrate and emitting light of a specific wavelength, first reflecting layer formed on a light exit side relative to light-emitting layer and including a function of reflecting light emitted from light-emitting layer, second reflecting layer provided on a side of substrate in a manner to interpose light-emitting layer between first reflecting layer and second reflecting layer; light diffusion layer that diffuses light emitted from light-emitting layer is disposed between first reflecting layer and second reflecting layer; and second reflecting layer is formed of a high reflective metallic layer formed of a metallic film having a high reflectivity, a low refractive index layer formed of a material film having a low refractive index, and a multilayer-film reflective layer formed by laminating films made of materials having different reflectivity.

Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, a first transparent electrode formed on the second conductive type layer, a reflecting layer formed on the first transparent electrode, and including a smaller area than the first transparent electrode, a second transparent electrode formed on the first transparent electrode so as to cover the reflecting layer, and a pad electrode formed on the second transparent electrode and in a region above the reflecting layer.

Abstract: A light-emitting element and a display device having a resonator structure which has a small luminance fluctuation, even if a film thickness is deviated from a designed value, thereby resulting in a variation in resonator optical path length. There are included: a first reflective member; a second reflective member; and a light-emitting layer provided therebetween, and there is provided a resonator structure that transmits part of light by the first reflective member or the second reflective member, the light being resonated between the first reflective member and the second reflective member. The resonator structure has at least two or more resonance spectral peaks at respective wavelengths in a visible light range with a wavelength of a maximum value relative luminosity being a border line and an emission output spectrum has at least two or more peaks at respective wavelengths based on the resonance spectral peaks.

Abstract: A light emitting device is disclosed. The light emitting device includes a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned, a first electrode disposed on the first conductive type semiconductor layer, and a second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.

Abstract: An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer.

Abstract: A light emitting device includes a substrate, a first conductive type semiconductor layer disposed on the substrate, an active layer disposed on one part of the first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the active layer, a first electrode disposed on the second conductive type semiconductor layer, and a second electrode disposed on the other part of the first conductive type semiconductor layer, wherein a trench is formed at a portion of the second conductive type semiconductor layer, the active layer or the first conductive type semiconductor layer so that the trench is disposed under the first electrode.

Abstract: A light-emitting diode (LED) device. In one embodiment, the LED device includes a heat dissipation bulk, a first electrode pad, a second electrode pad and at least one LED chip. The heat dissipation bulk includes at least two concaves. The first electrode pad and the second electrode pad are respectively disposed in the concaves and are electrically isolated from each other. The LED chip is embedded into the heat dissipation bulk, and the heat dissipation bulk electrically isolates the LED chip, the first electrode pad and the second electrode pad. The LED chip includes a first electrode and a second electrode of different conductivity types, and the first electrode and the second electrode are electrically connected to the first electrode pad and the second electrode pad respectively.

Abstract: The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (160); and a first electrode (200), which is the cathode, is formed on the p-type semiconductor layer (160). Also, between the p-type semiconductor layer (160) and a reflecting layer (220b), the first electrode (200) is provided with a crystalline first transparent electrode layer (210) and a non-crystalline second transparent electrode layer (220a). The crystalline first transparent electrode layer (210) increases adhesion with the p-type semiconductor layer (160), and the non-crystalline second transparent electrode layer (220a) suppresses delamination of the reflecting layer (220b). Also, the first transparent electrode layer (210) and the second transparent electrode layer (220a) transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics.

Abstract: A light-emitting diode includes a carrier having a mounting surface; at least one light-emitting diode chip fixed to the mounting surface; and a reflective element provided for reflecting electromagnetic radiation, wherein the reflecting element is fixed to the carrier and includes porous polytetrafluoroethylene.

Abstract: According to one embodiment, an LED module includes a substrate, an interconnect layer, a light emitting diode (LED) package, and a reflection member. The interconnect layer is provided on the substrate. The LED package is mounted on the interconnect layer. The reflection member is provided on a region in the substrate where the LED package is not mounted and has a property of reflecting light emitted from the LED package. The LED package includes a first lead frame, a second lead frame, an LED chip, and a resin body. The first lead frame and the second lead frame are arranged apart from each other on the same plane. The LED chip is provided above the first lead frame and the second lead frame, with one terminal connected to the first lead frame and one other terminal connected to the second lead frame.

Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.

Abstract: The present disclosure provides a radiation device. The radiation device includes a first light emitting diode (LED) operable to emit light having a first central wavelength; a second LED configured adjacent the first LED and operable to emit light having a second central wavelength substantially less than the first central wavelength; and a luminescent material disposed on the first LED and the second LED. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium, lithium (Ce3+, Li+).

Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.

Abstract: The invention relates to a top-emissive organic light-emitting diode (OLED) (10) arranged to emit light having different emission colours, comprising a multi-layered structure provided with a first electrode, a second electrode and a functional layer enabling light emission disposed between the first electrode and the second electrode, wherein thickness (H1, H2) of the functional layer is modulated by allowing at least a portion of the functional layer to interact with a thickness modulator (5a, 5b, 5c), wherein the functional layer comprises a hole injection layer or the electron injection layer.

Abstract: Light-emitting diodes, and methods of manufacturing the light-emitting diode, are provided wherein a plurality of nano-rods may be formed on a reflection electrode. The plurality of nano-rods extend perpendicularly from an upper surface of the reflection electrode. Each of the nano-rods includes a first region doped with a first type dopant, a second region doped with a second type dopant that is an opposite type to the first type dopant, and an active region between the first region and the second region. A transparent insulating layer may be formed between the plurality of nano-rods. A transparent electrode may be formed on the plurality of nano-rods and the transparent insulating layer.

Abstract: Provided is a white LED including a reflector cup; an LED chip mounted on the bottom surface of the reflector cup; transparent resin surrounding the LED chip; a phosphor layer formed on the transparent resin; and a light transmitting layer that is inserted into the surface of the phosphor layer so as to form an embossing pattern on the surface, the light transmitting layer transmitting light, incident from the phosphor layer, in the upward direction.

Abstract: A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer on an outer portion of the reflective layer, the protective layer including a first portion between the reflective layer and the second conductive layer, and a second portion that extends beyond the second conductive type semiconductor layer; and a light extraction structure including a compound semiconductor on the second portion of the protective layer.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a wavelength conversion unit disposed on the substrate to cover at least an upper surface of the light emitting element; and a reflection unit formed to cover a side surface and a lower surface of the substrate and having a resin and a reflective filler dispersed in the resin. Light emitting devices having uniform characteristics can be obtained by minimizing a chromaticity distribution of white light with respect to the different light emitting devices.

Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.

Abstract: A light emitting device package includes: first and second electrodes, at least a portion of a lower surface thereof being exposed; a light emitting device disposed on an upper surface of at least one of the first and second electrodes; a reflection wall disposed on the upper surface of the first and second electrodes and surrounding the light emitting device to form a mounting part therein; and a fluorescent film disposed on the reflection wall to cover an upper portion of the mounting part. The mounting part is filled with air.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Abstract: The light emitting semiconductor device (1) of the present invention is made of nitrides of group III metals and comprises a layer structure comprising an n-type semiconductor layer (2), a p-type semiconductor layer (3), an active region (4) between the n-type semiconductor layer and the p-type semiconductor layer. The layer structure has a contact surface (5) defined by one of the n-type and p-type semiconductor layers and comprises further a reflective contact structure (6) attached to the contact surface. According to the present invention, the reflective contact structure (6) comprises: a first transparent conductive oxide (TCO) contact layer (13), having a poly-crystalline structure, attached to the contact surface (5) of the layer structure; a second transparent conductive oxide (TCO) contact layer (14) having an amorphous structure; and a metallic reflective layer (15) attached to the second TCO layer.

Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary embodiment, the LED chip is disposed on the base and is configured with a first light-emitting surface for outputting light therefrom; and the waveguide, being comprised of a polarization layer, a reflection layer, a conversion layer and a light transmitting layer, is disposed at the optical path of the light emitted from the LED chip; and the packaging material is used for packaging the waveguide, the LED chip and the base into a package.

Abstract: The present invention relates to light emitting diode (LED) packages and methods of manufacturing the same, and more particularly, to an LED package and a method of manufacturing the same that can reduce a variation of color coordinates of mass-produced LED packages.