Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.

Abstract: A lighting device (7) for illuminating objects, the lighting device comprising: a plurality of light emitting diodes (1) wherein at least one of the plurality of light emitting diodes is adapted to generate light having a spectrum different from a spectrum of light generated by another light emitting diode of said plurality of light emitting diodes; and a chamber (8) comprising a first reflective surface (3a) and an opening (5) for allowing light to exit said chamber, said opening having a periphery, wherein the plurality of light emitting diodes (1) are positioned along the periphery of said opening.

Abstract: The present invention discloses a LED package structure and a module thereof. The LED package structure comprises a metallic chip-carrying lead frame, a metallic anode lead frame, a metallic cathode lead frame and a forming resin. At least one LED chip is stuck to the metallic chip-carrying lead frame. The metallic anode lead frame and metallic cathode lead frame are arranged beside the metallic chip-carrying lead frame. The forming resin includes a top member, a first sidewall, and a second sidewall. The top member is arranged on the metallic chip-carrying lead frame and has an opening to reveal the LED chip. A reflective wall is formed along the opening. The first sidewall is arranged between the metallic chip-carrying lead frame and the metallic anode lead frame to join them. The second sidewall is arranged between the metallic chip-carrying lead frame and the metallic cathode lead frame to join them.

Abstract: The present invention provides a light emitting element which emits linearly polarized light, has high efficiency, can show a higher luminance and has also adequate productivity.

Abstract: A highly efficient, lightweight solid state lighting panel is disclosed that has multiple LED sources, and emits a substantially uniform light intensity between said sources. The light from these sources is directed towards a highly reflective, diffusive, backing. These LED sources are placed between the reflector and a partially transmissive, partially reflective output coupler to form a cavity. The LEDs, which are mounted to printed circuit boards to form strips, can be either attached to the inner surface of the diffuser with adhesive, or suspended on a thermally dissipative structure within the cavity. By optimizing the reflector to have as high of a reflectance value as possible (>95%) along with a output diffuser with about 50% transmission and 50% reflection, one can obtain cavity transmissions higher than 90%. The output from this disclosed design is more pleasant to look at than those with LEDs that directly illuminate the diffuser, causing hotspots.

Abstract: A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Abstract: A light-emitting diode (LED) module includes a substrate, an LED, a first encapsulation element and a second light-pervious encapsulation element. The substrate has a first surface, a second surface, a circuit layer and an opening, wherein the opening penetrates through the first surface and the second surface, and the circuit layer includes at least one first conductive contact disposed on the first surface. The LED is disposed in the opening and is electrically connected to the first conductive contact. The first encapsulation element and the second light-pervious encapsulation element are respectively disposed on the first surface and the second surface, for encapsulating the LED and the first conductive contact. The aforementioned LED module may output light from the back of the LED, thereby improving the light output efficiency of the LED module. A manufacturing method of the aforementioned LED module is also herein disclosed.

Abstract: To further improve light extraction efficiency, a light-emitting apparatus includes a cavity for resonating light emitted from a emission layer between a first reflective surface and a second reflective surface. The first reflective surface is located on a first electrode side relative to the emission layer. The second reflective surface is located on a second electrode side relative to the emission layer. A periodic structure for extracting, to outside of a light-emitting device, light which is generated from the emission layer and wave-guided in an in-plane direction of the light-emitting device between the first reflective surface and the second reflective surface is formed in the first reflective surface, or in the second reflective surface, or between the first reflective surface and the second reflective surface.

Abstract: The present invention provides a light emitting device and a method for manufacturing the light emitting device. The light emitting device includes a susceptor and a light emitting diode set on the susceptor. The light emitting diode includes an electrode layer connected to the susceptor and an LED die set on the electrode layer. The electrode layer is provided with a pyramid array structure surface and the pyramid array surface works as a reflective surface of the light emitting diode. The LED die is provided with an alveolate surface which works as the light exiting surface of the LED. According to the light emitting device provided in the present invention, the emanative light generated by the LED is emitted or reflected to a desired emitting direction. Further, the light emitting device has an alveolate light exiting surface and an LED having a pyramid array reflective surface, which increases the light emitting and reflective area of the LED, thereby improving the luminous efficiency.

Abstract: An LED package includes a substrate, an LED die, electrodes, a reflective cup, a barrier portion and an encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The electrodes are formed on the substrate and spaced from each other. The barrier portion is formed on the electrodes and covered by the reflective cup, wherein a bonding force between the barrier portion and the electrodes is larger than that between the reflective cup and the electrodes. The LED die is mounted on one of the electrodes, received in the reflective cup and electrically connected to the electrodes via wire bonding. The disclosure also provides a method for making an LED package.

Abstract: The present invention aims to provide a light source for illumination that achieves excellent luminous intensity distribution and can be easily assembled. A light source 1 comprises a mount 20; a plurality of semiconductor light-emitting elements 12 disposed on an upper surface 22 of the mount 20 so that each light-emitting element emits light primarily upward; and a reflector 80 disposed above the semiconductor light-emitting elements 12 and having a reflective surface 85 configured to reflect a portion of primary light from the light-emitting elements 12 obliquely downward so that the portion of the primary light is prevented from striking the upper surface 22 of the mount 20, wherein the reflector 80 is provided with an opening 86 or a cut for leaking another portion of the primary light upward.

Abstract: A top-emission organic light-emitting diode (OLED) structure is provided. The top-emission OLED structure includes a substrate, a reflective layer, a first conductive layer, a second conductive layer and an emissive layer. The reflective layer is disposed above the substrate. The reflective layer includes a first material, a second material and a third material. The first material is aluminum (Al), the second material is nickel (Ni), and the third material is selected form a group consisting of group 13 elements and group 14 elements of a periodic table of elements. The first conductive layer is disposed above the reflective layer. The second conductive layer is disposed above the first conductive layer. The emissive layer is disposed between the first conductive and the second conductive layer.

Abstract: Disclosed is a light-emitting element with a microcavity structure which is capable of amplifying a plurality of wavelengths to give emission of a desired color. The light-emitting element includes a pair of electrodes and an EL layer having a light-emitting substance interposed between the pair of electrodes. One of the pair of electrodes gives a reflective surface and the other electrode gives a semi-reflective surface. The light-emitting element is arranged so that the emission of the light-emitting substance covers at least two wavelengths ? and an optical path length L between the reflective surface and the semi-reflective surface satisfies an equation L=n?/2 where n is an integer greater than or equal to 2.

Abstract: An LED package structure includes a substrate, two electrodes engaged in the substrate, an LED chip, a reflective cup and an encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. Each of the electrodes defines a groove. The grooves surrounding the LED chip. The LED chip is mounted on one of the electrodes and electrically connected to the two electrodes. The reflective cup is mounted on the substrate and surrounds the LED chip. The encapsulation covers the LED chip and extends in the grooves of the electrodes to prevent water/moisture from entering the LED chip.

Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract: A light emitting diode module is produced using at least one LED and at least two selectable components that form a light mixing chamber. First and second selectable components have first and second types of wavelength converting materials with different wavelength converting characteristics. The first and second wavelength converting characteristics alter the spectral power distribution of the light produced by the LED to produce light with a color point that is a predetermined tolerance from a predetermined color point. Moreover, a set of LED modules may be produced such that each LED module has the same color point within a predetermined tolerance. The LED module may be produced by pre-measuring the wavelength converting characteristics of the different components selecting components with wavelength converting characteristics that convert the spectral power distribution of the LED to a color point that is a predetermined tolerance from a predetermined color point.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.

Abstract: A method for producing a light emitting transfer sheet includes the steps of preparing a light emitting element sheet including a light semiconductor layer connected to an electrode portion on one side surface and a phosphor layer laminated on the other side surface; dividing the light emitting element sheet into plural pieces to form a plurality of light emitting elements; disposing a plurality of the light emitting elements on a substrate to be spaced apart from each other; forming a reflecting resin layer containing a light reflecting component on the substrate so as to cover the light emitting elements; and removing the reflecting resin layer partially so that one side surface of the electrode portion is exposed from the reflecting resin layer.

Abstract: A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Abstract: A phosphor reflecting sheet provides a phosphor layer on one side in a thickness direction of a light emitting diode element and provides a reflecting resin layer at the side of the light emitting diode element. The phosphor reflecting sheet includes the phosphor layer and the reflecting resin layer provided on one surface in the thickness direction of the phosphor layer. The reflecting resin layer is formed corresponding to the light emitting diode element so as to be disposed in opposed relation to the side surface of the light emitting diode element.

Abstract: Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first and second conductive semiconductors, and an active layer; an insulating layer on a lateral surface of the light emitting structure; an electrode on the first conductive semiconductor layer; an electrode layer under the second conductive semiconductor layer; and a protective layer including a first portion between the light emitting structure and the electrode layer and a second portion extending outward beyond a lower surface of the light emitting structure, wherein the first conductive semiconductor layer includes a first top surface including a roughness on a first region, and a second top surface lower than the first region and being closer the lateral surface of the light emitting structure than the first region, wherein the second top surface is disposed on an edge portion of the first conductive semiconductor layer.

Abstract: A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: A light-emitting device includes a first layer that forms a waveguide of light and second and third layers that hold the first layer therebetween. The waveguide of the light includes a first region, a second region, and a third region. The first region includes a first portion having a curvature. The second region includes a second portion having a curvature. The first and second regions are connected in a reflecting section on a side surface of the first layer. The third region forms a resonator. A distance between the third region and at least one of the first and second regions is a distance at which evanescent coupling occurs. First light emitted from a light emitting area of the first region and second light emitted from a light emitting area of the second region are emitted in the same direction.

Abstract: A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20.

Abstract: A light emitting device and method of fabricating the same is disclosed that comprises at least one light emitter comprising an active region which emits light. The device further comprising a submount arranged such that the at least one light emitter is mounted to the submount such that the active region is angled in relation to the submount.

Abstract: A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.

Abstract: A light emitting element has an organic layer that sequentially includes a first emission layer and a second emission layer, a first reflection interface, and a second reflection interface, wherein, if the optical distance between the first reflection interface and the emission center of a first emission layer is L11, the optical distance between the first reflection interface and the emission center of a second emission layer is L21, the optical distance between the emission center of the first emission layer and the second reflection interface is L12, the optical distance between the emission center of the second emission layer and the second reflection interface is L22, a central wavelength of an emission spectrum of the first emission layer is ?1, and a central wavelength of an emission spectrum of the second emission layer is ?2, the optical distances L11, L21, L12 and L22 satisfy predetermined expressions.

Abstract: A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.

Abstract: This disclosure provides systems, methods and apparatuses for pixel vias. In one aspect, a method of forming an electromechanical device having a plurality of pixels includes depositing an electrically conductive black mask on a substrate at each of four corners of each pixel, depositing a dielectric layer over the black mask, depositing an optical stack including a stationary electrode over the dielectric layer, depositing a mechanical layer over the optical stack, and anchoring the mechanical layer over the optical stack at each corner of each pixel. The method further includes providing a conductive via in a first pixel of the plurality of pixels, the via in the dielectric layer electrically connecting the stationary electrode to the black mask, the via disposed at a corner of the first pixel, offset from where the mechanical layer is anchored over the optical stack in an optically non-active area of the first pixel.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A light emitting device includes a substrate having a conductive portion; a light emitting element having one or more electrodes on a lower surface side thereof, the electrodes being positioned on the conductive portion of the substrate; a phosphor layer disposed on a surface of the light emitting element and on a peripheral surface area of the conductive portion next to the light emitting element; and a reflection layer covering a part of the phosphor layer disposed on the peripheral surface area of the conductive portion.

Abstract: LEDs (30) are described containing a getter system comprising a getter material (13) and a metallic part (10), in which the getter material is optically shielded from the metallic part.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: A light-emitting thyristor includes a substrate, a first semiconductor multi-layered mirror of a first conductivity type that is formed on the substrate, a gate layer that is formed on the first semiconductor multi-layered mirror by stacking a plurality of semiconductor light-emitting layers having different peak values of an emission wavelength, and a second semiconductor multi-layered mirror of a second conductivity type that is formed on the gate layer.

Abstract: A display device including light emitting elements corresponding to respective colors disposed on a substrate. Each light emitting has a cavity structure in which a light emission functioning layer including a light emitting layer is held between a reflecting electrode and a semitransmitting electrode. A cavity order of at least the light emitting element adapted to resonate a light, having the shortest wavelength is 1, and a cavity order of each of other light emitting elements is 0. The light emission functioning layer except for the light emitting layer is common to the light emitting elements corresponding to the respective colors.

Abstract: A light-emitting device, including a heatsink arranged at a tip of the light-emitting device, at least one light source, in particular a light-emitting diode, arranged on an underside of the heatsink, and a reflector arranged below the heatsink for reflecting at least some of the light emitted by the at least one light source.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

Abstract: A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.

Abstract: An organic light-emitting display device includes a first substrate and a second substrate that face each other; an organic light-emitting device that is disposed between the first and second substrates and includes a pixel electrode separately formed in each pixel, a common electrode facing the pixel electrode, and an organic light-emitting layer disposed between the pixel electrode and the common electrode; and an electrode unit and at least one wiring unit that are disposed between the first substrate and the second substrate, the electrode unit including at least one thin-film transistor for transmitting a light-emitting signal to the pixel electrode and at least one capacitor, wherein an optical property modification layer obtained by modifying an optical property of at least one of the electrode unit and the wiring unit is formed on a surface of the at least one of the electrode unit and the wiring unit.

Abstract: A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film.

Abstract: The present invention includes: a heat dissipation plate (4) that has an upper surface on which an LED chip (3) is provided and that dissipates heat generated by the LED chip (3); a reflecting plate (7) for reflecting light emitted from the LED chip (3); and a substrate (2) provided between the heat dissipation plate (4) and the reflecting plate (7), the heat dissipation plate (4) and the reflecting plate (7) being integrally formed by bonding at a bonding section (12), the heat dissipation plate (4) and the substrate (2) being bonded to each other at a bonding section (20), the heat dissipation plate (4) and the reflecting plate (7) each having a surface covered by a conductor pattern (13).

Abstract: An LED package includes a light transmissive encapsulation, an LED die, a fluorescent layer, a baffle wall, a positive electrode and a negative electrode. The encapsulation includes a light emitting surface and a bottom surface opposite to the light emitting surface. The LED die, the fluorescent layer and the baffle wall are embedded in the encapsulation from the bottom surface side. The LED die includes a front surface for outputting light outward and a back surface opposite to the front surface. The front surface faces the light emitting surface of the encapsulation, and the back surface is exposed outside. The fluorescent layer is formed on the front surface of the LED die. The baffle wall surrounds the LED die and the fluorescent layer. The positive electrode and negative electrode are electrically connected to the LED die.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.

Abstract: An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.

Abstract: A light emitting diode package comprises a light emitting diode chip, a first luminescent conversion layer and a separate second luminescent conversion layer on the first luminescent conversion layer. The first luminescent conversion layer has a first luminescent conversion element surrounding the light emitting diode chip. The second luminescent conversion layer has a second luminescent conversion element located above the light emitting diode chip. An excitation efficiency of the first luminescent conversion element is higher than that of the second luminescent conversion element.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first layer, a second layer and a distributed Bragg reflector. The light emitting layer has a first and second surfaces and is capable of emitting emission light having a peak wavelength in a range of 740 nm or more and 830 nm or less. The first layer is provided on a side of the first surface and has a light extraction surface. The second layer is provided on a side of the second surface. The distributed Bragg reflector layer is provided on a side of the second layer. A third and fourth layers are alternately stacked. The distributed Bragg reflector layer is capable of reflecting the emission light toward the light extraction surface. The third and fourth layers each have a bandgap wavelength shorter than the peak wavelength.