Abstract: A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer.

Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an electrode layer, a current density adjusting pattern on the electrode layer, and a light emitting structure on the electrode layer and the current density adjusting pattern. A column pattern or a hole pattern serving as a structure of a resonant cavity is formed at an upper portion of the light emitting structure.

Abstract: It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.

Abstract: There is provided a solid state light emitting device comprising at least one light emitting active layer structure and at least one structure selected from among: (1) a first element having at least a first region which has an index of refraction gradient, (2) a first element, at least a portion of which has an index of refraction which is lower than an index of refraction of a side of the active layer, (3) first and second elements, in which one side of the second element is positioned on a side of the active layer and the first element is positioned on the other side of the second element, and in which at least a portion of the first element has an index of refraction which is lower than the index of refraction of at least a portion of the second element. Also provided are methods of making such devices.

Abstract: The present invention provides a resin composition comprising a liquid crystal polyester and a titanium oxide filler, wherein when a value obtained by converting the content of aluminum in the titanium oxide filler to the content of aluminum oxide is A (% by weight) and the volume average particle diameter of the titanium oxide filler is B (?m), A and B satisfy the formula (I): A?0.1 and the formula (II): A/B2?25, a reflective board obtained by molding the resin composition, and a light-emitting apparatus comprising the reflective board and a light-emitting element. According to the resin composition of the present invention, a reflective board having high reflectance and high heat resistance can be obtained. Furthermore, a light-emitting apparatus which is excellent in properties such as luminance can be obtained by using the reflective board.

Abstract: Disclosed is a hybrid LED chip: comprising a first clad layer of P-type semiconductor material; a second clad layer of N-type semiconductor material; an active layer between the first and second clad layers; a first bonding metal layer on the first clad layer; a second bonding metal layer on the second clad layer; a ceramic substrate positioned on and bonded to the first and second bonding metal layers, wherein the ceramic substrate includes at least one first via hole to expose the first bonding metal layer, and at least one second via hole to expose the second bonding metal layer; a P-type electrode formed by burying a conductive material in the at least one first via hole; and an N-type electrode formed by burying a conductive material in the at least one second via hole, wherein the first and second via holes in the ceramic substrate are formed in cylindrical shapes, and the circumferential surface of each cylindrical shape is provided with an intaglio pattern.

Abstract: A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.

Abstract: In a light emitting module 40, a light wavelength conversation ceramic 52 converts the wavelength of the light emitted by a semiconductor light emitting element 48 then emits the light. An optical filter 50 transmits the blue light Lb mainly emitted by the semiconductor light emitting element 48 and reflects the yellow light Ly whose wavelength has been mainly converted by the light wavelength conversion ceramic 52. The optical filter 50 is provided on the surface of the light wavelength conversion ceramic 52. The light emitting module 40 is manufactured by: the process where the optical filter 50 is provided on at least one surface of the light wavelength conversion ceramic 52; and the process where the semiconductor light emitting element 48 and the light wavelength conversion ceramic 52 are arranged such that the light emitted by the semiconductor light emitting element 48 is incident into the light wavelength conversion ceramic 52.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system.

Abstract: A Power LED device including a reflector and a light emitting diode (LED). The reflector is made of aromatic polyester and/or wholly aromatic polyester.

Abstract: Provided is a light emitting device. The light emitting device includes a conductive support substrate, an ohmic contact layer, a current blocking layer, a light emitting structure layer, an electrode, and a first current guide layer. The ohmic contact layer and the current blocking layer are disposed on the conductive support substrate. The light emitting structure layer is disposed on the ohmic contact layer and the current blocking layer. The electrode is disposed on the light emitting structure layer. At least a part of the electrode is overlapped with the current blocking layer. The first current guide layer is disposed between the current blocking layer and the conductive support substrate. At least a part of the first current guide layer is overlapped with the current blocking layer.

Abstract: Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and an illumination system. The light emitting device includes a transmissive substrate, an ohmic layer on the transmissive substrate, a light emitting structure on the ohmic layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers, a electrode layer on a bottom surface of the transmissive substrate, and a conductive via electrically connecting the light emitting structure with the electrode layer through the transmissive substrate wherein an area of the transmissive substrate is increased toward an upper portion thereof from a lower portion.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract: Disclosed herein is an organic light emitting diode device, including: an organic EL element layer; an electrode layer supplying power to the organic EL element layer; and a metal nanocluster layer which is formed by covering a plurality of metal clusters with media and which is located between the organic EL element layer and the electrode layer to induce a luminescence enhancement effect. The organic light emitting diode device is advantageous in that carriers can be easily injected, so that light output efficacy is improved, thereby enhancing fluorescent emission output.

Abstract: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

Abstract: A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film.

Abstract: A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).

Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding

Abstract: The present invention relates to a light emitting device (100) comprising at least one light emitter (101), a substrate (102) and a reflective optic housing (103,108), the space between the reflective optic housing (103,108) and the one or more light emitters (101) being filled at least partly by a suspension of a reflective material (104), in order to increase the light output from the light emitter(s) (101).

Abstract: A light emitting device package of the embodiment includes a body; an insulating layer on a surface of the body; at least one electrode layer on the insulating layer; and a light emitting device on the at least one electrode layer. The electrode layer includes a thermal diffusion layer and a reflective layer on the thermal diffusion layer, and the thermal diffusion layer has a thickness thicker than a thickness of the reflective layer by at least twenty times.

Abstract: According to one embodiment, a light-emitting device comprises a substrate on a surface of which a light-emitting element is mounted, a light reflection layer formed on a second area of the surface of the substrate other than a first area on which the light-emitting element is mounted, and a sealing member sealing the light-emitting element. An engagement protrusion part protruding toward the sealing member is provided at an edge part of the light reflection layer at which the light reflection layer is in contact with the area on which the light-emitting element is mounted. The engagement protrusion part juts out into the sealing member to prevent exfoliation of the sealing member.

Abstract: A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) detachably attaching a temporary substrate over the roughened upper surface of the epitaxial film; (e) roughening the lower surface of the epitaxial film; (f) disposing the roughened lower surface of the epitaxial film on a reflective top surface of an electrically conductive permanent substrate; (g) filling an optical adhesive in a gap between the roughened lower surface of the epitaxial film and the reflective top surface of the permanent substrate; and (h) after the step (g), removing the temporary substrate from the epitaxial film.

Abstract: Provided is an LED package. It is easy to control luminance according to the luminance and an angle applicable. Since heat is efficiently emitted, the LED package is easily applicable to a high luminance LED. The manufacturing process is convenient and the cost is reduced. The LED package includes a substrate, an electrode, an LED, and a heatsink hole. The electrode is formed on the substrate. The LED is mounted in a side of the substrate and is electrically connected to the electrode. The heatsink hole is formed to pass through the substrate, for emitting out heat generated from the LED.

Abstract: The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.

Abstract: A light-emitter includes a first electrode and a layered body over the first electrode. The layered body includes a charge injection layer and a light-emitting layer. A bank defines a position of the light-emitting layer of the layered body, and a second electrode is over the layered body. The charge injection layer is formed by oxidation of an upper portion of a metal. The first electrode includes a metal layer that is a lower portion of the metal. An inner portion of the charge injection layer is depressed to define a recess. A portion of the bank is on an outer portion of the charge injection layer.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.

Abstract: A light emitting module is disclosed. The light emitting module includes a lead frame body, lead frame, a heat spreader, an intermediate heat sink, and at least one light emitting element (LED). The lead frame body defines a cavity which accurately registers the heat spreader and includes optical or reflective walls surrounding the light emitting elements soldered on metallized traces of the heat spreader. The lead frame body encases and supports portions of the lead frame. The lead frame extends from outside the body into the cavity to accurately align with solder pads of the heat spreader. All the pre-aligned mechanical, thermal and electrical contacts are then soldered by solder reflow process under tight environmental control to prevent damage to the light emitting element. A robust, healthy 3-dimensional optical-electro-mechanical assembly having a very low thermal resistance in a thermal path from its light emitting element to its intermediate heatsink is created.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same.

Abstract: A double-molded lens for an LED includes an outer lens molded around the periphery of an LED die and a collimating inner lens molded over the top surface of the LED die and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low index of refraction such as n=1.33-1.47, and the inner lens is formed of a higher index silicone, such as n=1.54-1.76, to cause TIR within the inner lens. Light not internally reflected by the inner lens is transmitted into the outer lens. The shape of the outer lens determines the side emission pattern of the light. The front and side emission patterns separately created by the two lenses may be tailored for a particular backlight or automotive application.

Abstract: A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad, and includes a reflective surface to direct light from the LED in a desired direction. The lens is free to move relative to the reflector plate and is capable of being raised or lowered by the encapsulant that wets and adheres to it and is placed at an optimal distance from the LED chip(s). Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink).

Abstract: An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

Abstract: A method of manufacturing LED devices using substrate scale processing includes providing a substrate member having a surface region. A reflective layer is disposed on the surface region, the reflective surface having a reflectivity of at least 85%, An array of conductive regions is spatially disposed on the reflective surface. LED devices are affixed to each of the array regions.

Abstract: Packages, systems and methods for light emitting devices are disclosed. An LED package in one aspect can be of various sizes and configurations and can include one or more LEDs of a size smaller than those typically provided. The LED package or packages can for example be used for backlighting or other lighting fixtures. Optimized materials and techniques can be used for the LED packages to provide energy efficiency and long lifetime.

Abstract: A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad, and includes a reflective surface to direct light from the LED in a desired direction. The lens is free to move relative to the reflector plate and is capable of being raised or lowered by the encapsulant that wets and adheres to it and is placed at an optimal distance from the LED chip(s). Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink).

Abstract: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer.

Abstract: A light emitting die package includes a substrate, a reflector plate, and a lens. The substrate has traces for connecting an external electrical power source to a light emitting diode (LED) at a mounting pad. The reflector plate is coupled to the substrate and substantially surrounds the mounting pad, and includes a reflective surface to direct light from the LED in a desired direction. The lens is free to move relative to the reflector plate and is capable of being raised or lowered by the encapsulant that wets and adheres to it and is placed at an optimal distance from the LED chip(s). Heat generated by the LED during operation is drawn away from the LED by both the substrate (acting as a bottom heat sink) and the reflector plate (acting as a top heat sink).

Abstract: Provided is an LED package. It is easy to control luminance according to the luminance and an angle applicable. Since heat is efficiently emitted, the LED package is easily applicable to a high luminance LED. The manufacturing process is convenient and the cost is reduced. The LED package includes a substrate, an electrode, an LED, and a heatsink hole. The electrode is formed on the substrate. The LED is mounted in a side of the substrate and is electrically connected to the electrode. The heatsink hole is formed to pass through the substrate, for emitting out heat generated from the LED.

Abstract: An exemplary light emitting diode (200) includes a base (18), a semiconductor chip (20), a cover (28), and two optical layers (30). The semiconductor chip is formed on the base. The cover is formed on the base and covers the semiconductor chip. The optical layers cover part of a peripheral side of the cover respectively.

Abstract: A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract: In one embodiment, a light-emitting device includes an optical part which is configured to prevent the formation of a residual film and to enhance light extraction efficiency. In one embodiment, an optical part as a reflective plate is arranged on a light extraction side of a light-emitting panel. In one embodiment, a plurality of optical function elements are formed independently of one another on a base of the optical part. In one embodiment, a residual film which is an optically unnecessary part between the base and the plurality of optical function elements is eliminated to prevent unnecessary light guiding, reflection or the like to the residual film. In one embodiment, in a light-emitting device including the optical part, stray light due to unnecessary light guiding or reflection to the residual film is reduced, and an improvement in light extraction efficiency achievable.

Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.

Abstract: The present invention provides a light-emitting device which includes, in the order mentioned, a light-emitting layer containing a light-emitting portion, an interference layer, and a fine concavo-convex pattern, wherein the interference layer is disposed over a second surface of the light-emitting layer which surface is opposite to a first surface of the light-emitting layer, and reflects, toward the first surface, light emitted from the light-emitting layer, and wherein the fine concavo-convex pattern has a cross-sectional shape which has portions projected and recessed with respect to the light-emitting layer, and reflects light emitted from the light-emitting layer.

Abstract: There is provided an LED module, including a bar type circuit substrate formed with at least one groove so as to have a reflecting cup; a plurality of LED chips disposed in the groove of the circuit substrate and linearly arranged in a longitudinal direction of the circuit substrate; and a phosphor film spaced apart from the LED chips and disposed on the circuit substrate to cover the entire groove.

Abstract: The invention provides a semiconductor light-emitting device package structure. The semiconductor light-emitting device package structure includes a substrate, N sub-mounts, and N semiconductor light-emitting die modules, wherein N is a positive integer lager than or equal to 1. Each of the sub-mounts is embedded on the substrate and exposed partially. Each of the semiconductor light-emitting die modules is mounted on the exposed surface of one of the sub-mounts.

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.