Abstract: In at least one embodiment of the organic light-emitting component (10), the latter comprises a unipolar charge carrier balder layer (3), a first layer (1) and a second layer (2) which are applied to opposing sides of the charge carrier barrier layer (3) and are in each case formed of at least one organic material, and two ambipolar injection layers (4), which are applied to the sides of the first (1) and second layers (2) remote from the charge carrier barrier layer (3). Such an organic, light-emitting component (10) may be operated efficiently with alternating current.

Abstract: A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with respect to one another, for example. A machined surface of the substrate can enhance reflectivity of the LED assembly. A transparent and/or non-global solder mask can enhance reflectivity of the LED assembly. A transparent ring can enhance reflectivity of the LED assembly. By enhancing reflectivity of the LED assembly, the brightness of the LED assembly can be increased. Brighter LED assemblies can be used in applications such as flashlights, displays, and general illumination.

Abstract: A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.

Abstract: The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

Abstract: A light emitting device is provided. The light emitting device includes a first electrode layer, a light emitting structure, and a second electrode layer. The light emitting structure is formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and includes a light extraction structure. The second electrode layer includes a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.

Abstract: A light emitting device according to the embodiment includes a first semiconductor layer; an active layer to generate a light on the first semiconductor layer; a second conductive semiconductor layer on the active layer; a transparent electrode layer on the second conductive semiconductor layer; and a multiple thin film mirror on the transparent electrode layer, the multiple thin film mirror being formed by repeatedly stacking a first thin film layer having a first refractive index and a second thin film layer having a second refractive index different from the first refractive index by at least one time, wherein the second conductive semiconductor layer has a thickness satisfying: 2·?1+?2=N·2?±?, (0????/2) in which, ?1 is a phase shift occurring when a light, which travels in a vertical direction, passes through the second conductive semiconductor layer and is expressed as ?1=2?nd/? (n is a refractive index of the light, ? is a wavelength of the light, and d is a thickness of the second conductive semiconduc

Abstract: The method of the invention is intended for manufacturing a laser diode with improved light-emitting characteristics. The method consists of providing certain components of a laser diode such as a wide-aperture lasing medium that has an active emitting layer with a first end and a second end, a DPH-mode reorganizer that contains a core and a plurality of nanogrooves made in the core and arranged in a pattern that accomplishes a given function and locally changes the refractive index of the core. The method further includes the steps of forming a semitransparent mirror on the second end of the active lasing medium and aligning the first end of the active emitting layer with the core of the DPH-mode reorganizer, thus forming a resonator of the laser diode. In the resonator, the light applied from the laser-active medium bounces back and forth between the DPH-mode reorganizer and the partially reflecting mirror, thereby enhancing stimulated emission.

Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side draw out electrode, an n-side draw out electrode, a resin, a fluorescent layer, and a fluorescent reflecting film. The semiconductor layer includes a first face, a second face opposite to the first face, and a light emitting layer. The fluorescent layer is provided on the first face side of the semiconductor layer. The fluorescent reflecting film is provided between the first face and the fluorescent layer.

Abstract: A light emitting diode (LED) package using a liquid crystal polymer, includes: a package main body formed by using a liquid crystal polymer; a lead frame formed on the package main body; an LED chip mounted on the lead frame; and a resin packaging unit encapsulating the LED chip, the resin packaging unit including phosphors. The LED package is highly reliable.

Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

Abstract: A light emitting apparatus includes one or more light emitting semiconductors, and an elongated lens encapsulating the one or more light emitting semiconductors. The elongated lens comprises an exterior surface having a photoluminescent material thereon.

Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

Abstract: A light-emitting chip (22) includes: a container (30) having a concave portion (31); first to fourth lead portions (61) to (64), provided to be exposed to the concave portion (31); and a first blue LED to a fourth blue LED (74) mounted on the first to fourth lead portions (61) to (64) exposed to the concave portion (31). The container (30) includes a first container portion (40) covering the region of the concave portion (31) where the first to fourth lead portions (61) to (64) are not exposed, and a second container portion (50) contacting the first to fourth lead portions (61) to (64) without being exposed to the concave portion (31) and accommodating the first container portion (40). The first container portion (40) is formed of a material having higher light reflectivity than that of the second container portion (50), and the second container portion (50) is formed of a material having higher thermal conductivity than that of the first container portion (40).

Abstract: An LED device and LED module are provided. The LED device is coupled to a lead frame with a first plane and a second plane opposite to the first plane, the lead frame having a LED chip disposed on the first plane. The LED device includes a reflection cup structure disposed on the lead frame, a lens structure and at least one fixing structure. The LED chip is disposed in the reflection cup structure and electrically connected to the first plane of the lead frame. The lens structure covers the first plane and the second plane of the lead frame. The fixing structure and the fixing structures are formed integrally and cover the lead frame cooperatively.

Abstract: There is presented a light emitting device, having plural light emitting elements disposed on a substrate, in which a protection element, such as a zener diode, can be disposed at an appropriate position. The light emitting device includes: a substrate; a light emitting section having plural light emitting elements disposed in a mounting area on the substrate; a positive electrode and negative electrode each having a pad section and wiring section to apply voltage to the light emitting section through the wiring sections; a protection element disposed at one of the positive electrode and negative electrode and electrically connected with the other one electrode; and a light reflecting resin formed on the substrate such as to cover at least the wiring sections and the protection element, wherein the wiring sections are formed along the periphery of the mounting area such that one end portions thereof are adjacent to each other.

Abstract: An LED module to realize light source performance as desire is comprised of multiple LEDs, a light-emitting chip of each LED being disposed in a carrier on a substrate; conduction circuits with different polarities being provided perimeter to the carrier on the substrate; golden plate wire connecting the chip and circuits; carrier being filled with fluorescent material before encapsulation; a slope being formed on the inner wall of the carrier; and the light-emitting angles varying depending on inclination carrier or the encapsulating height.

Abstract: A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.

Abstract: Disclosed herein is a light emitting device. The light emitting device includes a light emitting diode disposed on a substrate to emit light of a first wavelength. A transparent molding part encloses the LED, a lower wavelength conversion material layer is disposed on the transparent molding part, and an upper wavelength conversion material layer is disposed on the lower wavelength conversion material layer. The lower wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a second wavelength longer than the first wavelength, and the upper wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a third wavelength, which is longer than the first wavelength but shorter than the second wavelength. Light produced via wavelength conversion is prevented from being lost by the phosphor. Light emitting devices including a multilayer reflection minor are also disclosed.

Abstract: Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film.

Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.

Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

Abstract: A semiconductor light emitting device (A) includes a semiconductor light emitting element (2) including a light emitting layer (22), a lead (1) formed with a reflector (11) that surrounds the semiconductor light emitting element (2), a light transmitting resin (4) covering the semiconductor light emitting element (2). The reflector (11) of the lead (1) includes a recess (12) at the bottom surface. The semiconductor light emitting element (2) is mounted to a bottom surface of the recess (12), with the light emitting layer (22) positioned outside the recess (12). A highly heat conductive material (3) having a thermal conductivity higher than that of the light transmitting resin (4) is loaded between the semiconductor light emitting element (2) and the recess (12).

Abstract: A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic EL devices (3B), (3G), and (3R), in which a function layer (6) including a light emitting layer (11) is sandwiched between a lower electrode (4) made of a light reflective material and a semi-transmissive upper electrode (7), and which has a resonator structure in which light h emitted in the light emitting layer (11) is resonated using a space between the lower electrode (4) and the upper electrode (7) as a resonant section (15) and is extracted from the upper electrode (7) side are arranged on a substrate (2).

Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.

Abstract: Provided is a substrate for light-emitting element, which has a simple structure and nevertheless is capable of obtaining a high light extraction efficiency when a light-emitting element is mounted thereon. A substrate for light-emitting element, which comprises a substantially flat-form base member made of a sintered product of a first glass ceramics composition comprising a glass powder and a ceramics filler, and a frame member bonded on an upper main surface of the base member, wherein a concave is formed to have a bottom surface constituted by a part of the upper main surface of the base member and a side surface constituted by an inner wall surface of the frame member, so that the bottom surface of the concave has a mounting portion for mounting a light-emitting element, and the frame member is made of a sintered product of a second glass ceramics composition comprising a glass powder and a ceramics filler, which has a diffuse reflectivity.

Abstract: To provide a substrate for mounting a light-emitting element, which is provided with a reflection layer having a high optical reflectance and being less susceptible to deterioration of the reflectance due to corrosion and which has an improved light extraction efficiency and heat dissipation property, and a light-emitting device employing such a substance. A substrate for mounting a light-emitting element, which comprises a substrate main body having a mounting surface on which a light-emitting element is to be mounted, a reflection layer formed on a part of the mounting surface of the substrate main body and containing silver, and a vitreous insulating layer formed on the reflection layer and composed of glass and a ceramic filler, wherein the vitreous insulating layer has a surface swell of at most 5 ?m in a span of 300 ?m.

Abstract: A photo-emission semiconductor device superior in reliability is provided. The photo-emission semiconductor device includes a semiconductor layer, a light reflection layer provided on the semiconductor layer, and a protective layer formed by electroless plating to cover the light reflection layer. Therefore, even if the whole structure is reduced in size, the protective layer reliably covers the light reflection layer without gap.

Abstract: An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.

Abstract: The invention relates to a semiconductor device and a method for manufacturing the semiconductor device, which includes: an insulating film over a substrate; a first pixel electrode embedded in the insulating film; an island-shaped single-crystal semiconductor layer over the insulating film; a gate insulating film and a gate electrode; an interlayer insulating film which covers the island-shaped single-crystal semiconductor layer and the gate electrode; a wiring which electrically connects a high-concentration impurity region and the first pixel electrode to each other; a partition which covers the interlayer insulating film, the island-shaped single-crystal semiconductor layer, and the gate electrode and has an opening in a region over the first pixel electrode; a light-emitting layer formed in a region which is over the pixel electrode and surrounded by the partition; and a second pixel electrode electrically connected to the light-emitting layer.

Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

Abstract: A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electr

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A lead frame (100) of a light emitting diode (LED) comprises a housing (2) and a plurality of electrodes (1) arranged in the housing (2). The housing (2) has a cavity (21) with an inner circumferential surface for reflecting light from a LED chip mounted in the cavity (21). The inner circumferential surface is coated with a reflective coat (22) having a plurality of ultraviolet light reflective particles (23).

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a substrate over the light emitting structure; a first reflective layer having a plurality of dielectric layers including a first dielectric layer having a first refractive index over the substrate, and a second dielectric layer having a second refractive index different from the first refractive index over the first dielectric layer; and a second reflective layer over the first reflective layer, the second reflective layer having a refractive index lower than the refractive index of each dielectric layer of the first reflective layer.

Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Abstract: Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and removing a lateral surface of the compound semiconductor layer to form a roughly hemispheric lens. The lateral surface of the compound semiconductor layer is removed by a digital alloy method. In particular, the lateral surface of the compound semiconductor layer is removed by a wet etching process.

Abstract: A light emitting diode (LED) unit includes a carrier, a plurality of LED dies, a reflecting element and a molding material. A length-width ratio of the carrier is greater than or equal to 5. The LED dies are disposed on the carrier along a longitudinal direction of the carrier. The reflecting element has two reflecting portions disposed on the carrier along the longitudinal direction. The LED dies are disposed between the reflecting portions. The molding material covers the LED dies and contacts with the reflecting element.

Abstract: An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.

Abstract: Discussed is a semiconductor LED package. The semiconductor LED package includes a packet body having a cavity, a semiconductor light emitting device in the cavity of the package body; and a plurality of reflective frames, each of the reflective frames having a bottom frame in the cavity of the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame, wherein the plurality of reflective frames are electrically separated from each other.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Abstract: A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure.

Abstract: Lamps and bulbs are disclosed generally comprising different combinations and arrangements of a light source, one or more wavelength conversion materials, regions or layers which are positioned separately or remotely with respect to the light source, and a separate diffusing layer. This arrangement allows for the fabrication of lamps and bulbs that are efficient, reliable and cost effective and can provide an essentially omni-directional emission pattern, even with a light source comprised of a co-planar arrangement of LEDs. The lamps according to the present invention can also comprise thermal management features that provide for efficient dissipation of heat from the LEDs, which in turn allows the LEDs to operate at lower temperatures. The lamps can also comprise optical elements to help change the emission pattern from the generally directional (e.g. Lambertian) pattern of the LEDs to a more omni-directional pattern.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer.

Abstract: The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.

Abstract: A light emitting element package includes a substrate, a reflection layer, at least one light emitting element, at least two conductive layers, a plurality of metal pins and an encapsulation layer. The reflection layer is formed on the substrate. The at least one light emitting element is mounted on the reflection layer on the substrate. The at least two conductive layers are electrically coupled to the at least one light emitting element. The metal pins electrically couple to the at least two conductive layers. The encapsulation layer is mounted on the substrate for encapsulating the at least one light emitting element.

Abstract: A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).