Abstract: Disclosed is a light-emitting diode package. The light-emitting diode package includes an electrode pad on which a chip is placed; a housing having a window through which the chip is exposed; a housing wall defining the window; and an electrode lead extended from the electrode pad in a direction of the housing to be exposed outside a surface of the housing, wherein the housing wall formed in the direction comprises a first portion and a second portion thicker than the first portion to cover the electrode lead.

Abstract: A transceiver having a light source die, a photodetector die and a substrate is disclosed. The substrate has a first well in which the light source die is mounted and a second well in which the photodetector die is mounted. The substrate has a reflective surface which blocks light leaving the light source from reaching the photodetector unless the light is reflected by an object external to the transceiver. The reflecting surface of the second well in the substrate is shaped to concentrate light received from outside the transceiver onto the photodetector, and in one aspect of the invention it comprises a non-imaging optical element. The light source is powered by applying a potential between first and second contacts on the light source die. A signal is generated between first and second contacts on the photodetector die in response to illumination of the photodetector die.

Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

Abstract: A high luminous flux warm white solid state lighting device with a high color rendering is disclosed. The device comprising two groups of semiconductor light emitting components to emit and excite four narrow-band spectrums of lights at high luminous efficacy, wherein the semiconductor light emitting components are directly mounted on a thermal effective dissipation member; a mixing cavity for blending the multi-spectrum of lights; a back-transferred light recycling member deposited on top of an LED driver and around the semiconductor light emitters; and a diffusive member to diffuse the mixture of output light from the solid state lighting device. The solid state lighting device produces a warm white light with luminous efficacy at least 80 lumens per watt and a color rendering index at least 85 for any lighting application.

Abstract: Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing dielectric layer embedded Si nanoparticles overlying the bottom electrode. A transparent indium tin oxide (ITO) top electrode overlies the Si-containing dielectric layer, and a photonic bandgap (PBG) Bragg reflector underlies the Si bottom electrode. The PBG Bragg reflector includes at least one periodic bi-layer of films with different refractive indexes. The single-sided photonic bandgap planar waveguide interface is formed from a planar waveguide and a PBG Bragg reflector underlying the planar waveguide.

Abstract: In a semiconductor device 100, a light emitting device 102 is mounted on a substrate 101. A light reflection preventing film 130 for preventing a reflection of a light is formed on an upper surface of the light emitting device 102. Moreover, a plate-shaped cover 103 formed of a glass having a light transparency is disposed above the light emitting device 102, and a light reflection preventing film 140 for preventing a reflection of a light is also formed on an upper surface of the cover 103.

Abstract: A ceramic substrate for mounting a light emitting element. The ceramic substrate has a placement surface for placing a light emitting element having an electrode; and an electrode electrically-connected with the electrode of the light emitting element, wherein the ceramic substrate comprises a substrate body consisting of a nitride ceramics; and a coat layer coating at least a part of a surface of the substrate body and consisting of a ceramics different from the nitride ceramics forming the substrate body; and the coat layer has an optical reflectance of 50% or more for any light having a wavelength of from 300 to 800 nm, which can increase a luminance of the light emitting element by reflecting the light emitted from the element efficiently with certainty, and which has a high heat radiation property; and a manufacturing method therefor.

Abstract: A light emitting apparatus 11 comprises: an aluminum nitride co-fired substrate 13; at least one light emitting device 15 mounted on a front surface of the co-fired substrate 13 through a flip-tip method; and a reflector 16 having an inclined surface 14 for reflecting a light emitted from the light emitting device 15 to a front side direction, the reflector 16 is bonded to a surface of the aluminum nitride co-fired substrate 13 so as to surround a circumference of the light emitting device 15. This configuration can simplify the process of manufacturing the apparatus and can provide light emitting apparatus that are excellent in heat radiation performance, allow a larger current to pass therethrough, and can have a significantly increased luminance with a high luminous efficiency.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: A thin-film fingerprint sensor package primarily comprises a fingerprint sensor chip, a plurality of bumps, a wiring film, an encapsulant and a metal base to mechanically hold the fingerprint sensor chip. A sensing area is formed on the active surface of the fingerprint sensor chip. The bumps are disposed on the active surface. The wiring film has an opening to expose the sensing area and comprises a plurality of leads bonded to the bumps. The wiring film further has a ground lead electrically connecting the fingerprint sensor chip to the metal base. Therefore, the fingerprint sensor package can provide ESD protection during fingerprint recognition to avoid the damage of the fingerprint sensor chip.

Abstract: An illumination device includes a circuit board (11), an LED element (12) mounted on the circuit board, a light-transmitting sealing resin (16) covering the LED element and containing a fluorescent material, a light reflector (14) covering the light-transmitting sealing resin and reflecting light emitted from the LED element, and a light-guiding part (13) comprising a light-transmitting plate connected to the light-transmitting sealing resin, the light-guiding part guiding the light emitted from the LED element and including a light emission surface (13a) configured to emit the light.

Abstract: A light emitting device including a III-V group compound semiconductor includes a first stacked body and a second stacked body. The first stacked body includes a III-V group compound semiconductor stacked body, and a reflection layer, a first diffusion suppressing layer and a first metal layer formed on one main surface of the III-V group compound semiconductor stacked body. The second stacked body includes a semiconductor substrate and a second metal layer. The first stacked body and the second stacked body are joined by the first metal layer and the second metal layer, and by the first diffusion suppressing layer, diffusion of atoms between the reflection layer and the first metal layer is suppressed. Therefore, a III-V group compound semiconductor device having high efficiency of light emission to the outside per chip and manufacturing method thereof can be provided.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: An LED light comprising a light-emitting device provided to power supply means, encapsulating means for encapsulating the light-emitting device with a light-transmitting material, a reflective surface for reflecting the light emitted from the light-emitting device to a direction perpendicular to the center axis of the light-emitting device or at a large angle to the center axis, opposed to the light-emitting surface of the light-emitting device, a light-emitting diode having a side directing surface for directing sideways the light reflected from the reflective surface to a direction perpendicular to the center axis of the light-emitting device or at a large angle to the center axis, and a reflecting mirror disposed around the light-emitting diode.

Abstract: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.

Abstract: A mounting substrate for a semiconductor light emitting device includes a thermally conductive mounting block. The mounting block has, in a first face thereof, a cavity that is configured to mount a semiconductor light emitting device therein and to reflect light that is emitted by the semiconductor light emitting device that is mounted therein away from the cavity. A conductive lead inserted into the mounting block extends into the cavity. The conductive lead is electrically isolated from the mounting block and has an exposed contact portion in the cavity. The conductive lead may be a plurality of conductive leads each having an exposed contact portion at different locations in the cavity. Related packaging methods also may be provided.

Abstract: Disclosed herein is a side-view light emitting diode package with a reflector. The side-view light emitting diode package of the present invention comprises first and second lead terminals spaced apart from each other. The package body supports the first and second lead terminals and has an elongated opening through which a light emitting diode chip mounting region and the first and second lead terminals are exposed. Reflectors are formed between the chip mounting region and sidewalls positioned in a major axis direction of the opening. Each of the reflectors has a height lower than that of the sidewall of the opening. Accordingly, light emitted from a light emitting diode chip can be reflected using the reflectors, thereby improving light emitting efficiency of the side-view light emitting diode package.

Abstract: The invention provides a semiconductor light-emitting device package structure. The semiconductor light-emitting device package structure includes a substrate, N sub-mounts, and N semiconductor light-emitting die modules, wherein N is a positive integer lager than or equal to 1. Each of the sub-mounts is embedded on the substrate and exposed partially. Each of the semiconductor light-emitting die modules is mounted on the exposed surface of one of the sub-mounts.

Abstract: A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combinations of the elemental sources to produce a pair of DBR layers of compound alloys and a graded region including one or more discrete additional layers between the DBR layers of intermediate alloy composition. Exposure durations and combinations of the elemental sources in each exposure are predetermined by DBR design characteristics.

Abstract: A semiconductor light-emitting device includes: a printed-wiring board; a light-emitting diode element mounted on the printed-wiring board; and a resin body for sealing the light-emitting diode element. The resin body is composed of a first resin body arranged around the light-emitting diode element, and a second resin body, which seals the light-emitting diode and the first resin body. An upper edge of the first resin body disposed at a lower position of the PN-junction is configured to be at least on or beyond an imaginary line that connects the PN-junction and a lower edge of the second resin body.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

Abstract: Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm.

Abstract: The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices.

Abstract: A light-emitting element storing package which ensures the efficient reflection of light emitted by a light-emitting element by a reflector frame and thereby improves the brightness of the emitted light, and a method of manufacturing the same are provided. In a light-emitting element storing package includes: an insulating substrate consisting of a ceramic board, a reflector frame composed of a ceramic material, joined to the upper surface of the substrate along its outer edge and having an inner wall surface defining a light-reflecting surface, and a wiring pattern layer formed on the upper surface of the substrate for connection with a light-emitting element, a light-emitting element storing concave portion, which is defined by the substrate and the reflector frame, and in which the light-emitting element is mounted on the wiring pattern layer, the reflector frame is mainly composed of nitride ceramics and its light-reflecting surface is composed of white ceramics.

Abstract: The present invention provides light emitting displays which produce a bright image by efficiently emitting light radiated from a light-emitting thin-film layer to the viewer side, and also produces a high-quality image of high contrast ratio and changing in color to a limited extent over a wide viewing angle range even in a bright atmosphere.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.

Abstract: A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25?n and has a portion located between about 0.6?n and 0.75?n from the electrode, where ?n is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6?n and 0.75?n from the electrode and a portion of a second cluster located between about 1.2?n and 1.35?n from the electrode.

Abstract: A lighting device comprises a solid state light emitter, first and second electrodes connected to the emitter, an encapsulant region comprising a silicone compound and a supporting region. The encapsulant region extends to an external surface of the lighting device. At least a portion of the first electrode is surrounded by the supporting region. The encapsulant region and the supporting region together define an outer surface which substantially encompasses the emitter. A method of making a lighting device, comprises electrically connecting first and second electrodes to an emitter; inserting the emitter into mold cavity; inserting an encapsulant composition comprising a one silicone compound; and then inserting a second composition to substantially surround at least a portion of the first electrode.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: A sub-amount for mounting a light emitting device and a light emitting device package using the sub-mount are disclosed. The light emitting device package includes a package body having a mount for mounting a light emitting device, and through holes, electrodes formed on the package body, and a reflective layer arranged on one of the electrodes formed on an upper surface of the package body. The reflective layer has openings for enabling the light emitting device to be coupled to the electrodes.

Abstract: A lead frame structure of a light emitting diode is disclosed. The lead frame structure comprises a bonding zone, two wing-shaped reflective surfaces, a first electrode lead, and a second electrode lead. The first electrode lead and the second electrode lead are respectively connected to the bonding zone. The bonding zone bonds the light emitting diode. The reflective surfaces are formed on both sides of the bonding zone. A predetermined angle is formed between the bonding zone and the wing-shaped reflective surfaces for reflecting the side light emitted from the light emitting diode towards a predetermined direction.

Abstract: There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked.

Abstract: The invention provides a side-view LED having an LED window opened to a side to emit light sideward. A pair of lead frames each act as a terminal. An LED chip is attached to a portion of the lead frame and electrically connected thereto. A package body houses the lead frames and has a concave formed around the LED chip. Also, a high reflective metal layer is formed integrally on a wall of the concave. A transparent encapsulant is filled in the concave to encapsulate the LED chip, while forming the LED window. In addition, an insulating layer is formed on a predetermined area of the lead frames so that the lead frames are insulated from the high reflective metal layer. The side-view LED of the invention enhances light efficiency and heat release efficiency with an improved side-wall reflection structure.

Abstract: A Chip on Board (COB) package which can reduce the manufacturing costs by using a general PCB as a substrate, increase a heat radiation effect from a light source, thereby realizing a high quality light source at low costs, and a manufacturing method thereof. The COB package includes a board-like substrate with a circuit printed on a surface thereof, the substrate having a through hole. The package also includes a light source positioned in the through hole and including a submount and a dome structure made of resin, covering and fixing the light source to the substrate. The invention allows a good heat radiation effect by using the general PCB as the substrate, enabling manufacture of a high quality COB package at low costs. This in turn improves emission efficiency of the light source, ultimately realizing a high quality light source.

Abstract: A wiring substrate for mounting a light emitting element, comprising: a substrate body comprising an insulating material and having a first surface and a back surface; and a cavity being opened into the first surface of said substrate body and having a mounting area for mounting a light emitting element at a bottom face of said cavity, wherein a metalized layer provided along a side face of said cavity and metalized layers provided in said substrate body are provided to continue to each other.

Abstract: A housing for an electromagnetic radiation emitting optoelectronic component is specified. The housing comprises a housing base body provided with a recess in which at least one chip mounting surface is disposed. At least one outer surface of the housing base body, disposed on an emission side of the housing and adjoining the recess, is provided with a baffle layer suitable for screening an electromagnetic radiation. An electromagnetic radiation emitting component provided with such a housing and a method of making a corresponding housing or component are also specified.

Abstract: Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.

Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

Abstract: An optoelectronic chip having a semiconductor body (14), which contains a radiation-emitting region (2), and a partial region (3) in which the surface (13) of the semiconductor body (14) is curved convexly toward a carrier (10). The lateral extent (2r) of the radiation-emitting region (2) is less than the lateral extent (2R) of the partial region (3). A method for producing such a chip is also described.

Abstract: A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

Abstract: A method for manufacturing an optical element having a surface-emitting type semiconductor laser and a photodetector element that detects light emitted from the surface-emitting type semiconductor laser, the method including the steps of: (a) laminating, above a substrate, semiconductor layers for forming a first mirror, an active layer, a second mirror, a photoabsorption layer, an etching stopper layer and a contact layer; (b) patterning the semiconductor layers to form at least a photoabsorption layer, an etching stopper layer and a contact layer; (c) forming an electrode above the contact layer; and (d) etching a portion of the contact layer until an upper surface of the etching stopper layer is exposed.

Abstract: This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate.

Abstract: A light emitting device includes a light emitting element chip and a lens which transmits light generated by the light emitting device asymmetrically; a backlight unit which uses the light emitting device as a light source; and a field sequential LCD apparatus adopting the backlight unit.

Abstract: The invention provides a light emitting device which is capable of displaying on both sides, has a small volume, and is capable of being used as a module. A light emitting element represented by an EL element and the like is used in a pixel portion, and two pixel portions are provided in one light emitting device. A first pixel portion has a structure to emit light only from a counter electrode side of the light emitting element. A second pixel portion has a structure to emit light only from a pixel electrode side of the light emitting element. That is, in the first pixel portion and the second pixel portion, directions of light emission are reverse in front and back.

Abstract: The present invention provides a lighting head assembly that incorporates a high intensity LED package into an integral assembly including a heat sink and circuit board for further incorporation into other useful lighting devices. The present invention primarily includes a heat sink member that also serves as a mounting die and a reflector cup into which the LED package is mounted. The circuit board is placed behind the reflector cup and includes riser members that extend through holes in the rear wall of the reflector cup to facilitate electrical connections to the leads of the LED. This particular means for assembly allows the reflector cup and circuit board to cooperate to retain the LED package, provide electrical and control connections, provide integral heat sink capacity and includes an integrated reflector cup.

Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

Abstract: A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.

Abstract: An exemplary side-view light emitting diode (LED) includes a substrate, a housing, a LED chip, a capsulation material and a reflecting layer. The housing and the substrate cooperatively form a receiving space therebetween. The LED chip is received in the receiving space and electrically connected with the substrate. The capsulation material is filled in the receiving space and encapsulates the LED chip in the housing. An indent is defined in a top portion of the capsulation material to cave a top surface of the capsulation material. The reflecting layer is spread on the top surface of the capsulation material. The light emitted from the LED chip upwardly towards the top surface of the capsulation material is reflected to a lateral side of the housing by the reflecting layer. The indent has a horizontal section with a size decreased along a top-to-bottom direction. The housing has a diameter gradually increased along the top-to-bottom direction.

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract: A semiconductor light-emitting device according to an embodiment of the present invention includes chip LEDs formed on a silicon submount, in which a wiring pattern having a chip connecting terminal portion connecting the chip LEDs, an external connecting terminal portion connecting an external unit, and a plurality of lead portions connecting a corresponding chip connecting terminal portion and a corresponding external connecting terminal portion is formed on the silicon submount, and an area of the chip connecting terminal portions is made larger than an area of a region where the chip connecting terminal portion overlaps with the chip LEDs. Accordingly, a semiconductor light-emitting device of high heat radiation property and heat resistance can be provided.