Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: In an embodiment, the invention provides a SLCC package comprising first and second electrically conductive terminals, a polysiloxane and glass fiber structural body, a light source and a polysiloxane encapsulant. The first and second electrically conductive terminals are attached to the polysiloxane and glass fiber structural body. The light source is electrically connected to the first and second electrically conductive terminals. The polysiloxane and glass fiber structural body has a cavity that contains at least a portion of the polysiloxane encapsulant.

Abstract: A light emitting device has a package having an opening provided with a side surface and a bottom surface, and a lead frame exposed to the bottom surface. The lead frame includes a reflection portion bent on the side surface, and a portion of an inner wall surface of the reflection portion is positioned in an inner portion of the package. A light emitting device has a package having a recessed portion on a front surface, a lead frame exposed to a bottom surface of the recessed portion, a light emitting element disposed on the lead frame, and a sealing resin filled into the recessed portion. The lead frame includes a bent portion bent towards the front surface of the package in the recessed portion, and a projecting portion bent to project from the package towards an outer portion, and disposed on a face opposed to the front surface.

Abstract: A light emitting device according to the embodiment includes a conductive support member having a step portion at an outer peripheral region thereof, a protective member for filling the step portion formed at the outer peripheral region of the conductive support member, a reflective layer over the conductive support member, and a light emitting structure over the reflective layer and the protective member.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace.

Abstract: A semiconductor device and manufacturing method therefor, provided with the aims of constraining resin burr formation while having good electric connectivity and joining strength, and LED device, provided with the aim of improving adhesion between silicon resin and leads while having good luminescent characteristics. For these purposes, an organic film 110 is formed through self-assembly by functional organic molecules 11 at surface border regions of outer leads 301a of a QFP 10. The functional organic molecules 11 consist of a first functional group A1 bonding with metals, a principal chain B1, and a second functional group C1 inducing hardening in thermosetting resins. The principal chain B1 consists of a glycol chain, or else of a glycol chain and one or more among methylene, fluoromethylene, or siloxane chains. The principal chain B1 also preferably includes one or more among a hydroxyl radical, ketone, thioketone, primary amine, secondary amine, and aromatic compounds.

Abstract: Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a body, an insulating layer over a surface of the body, at least one electrode over the insulating layer, a light emitting diode connected to the electrode, and a reflective layer over the insulating layer.

Abstract: The present invention aims to make possible facile removal of resin burrs without the risk of damaging resin body covering a wiring lead in a semiconductor device. In detail, the semiconductor device 10 has a structure in which a semiconductor element is mounted on the wiring lead 10, the wiring lead 10 including a metal plate with metal coating applied to the outer surface thereof. The peripheral region 15 of the wiring lead 11 is covered with an organic coating including purine skeleton compounds. The organic coating is formed through the self-assembling of functional organic compounds each having a structure in which a purine skeleton has at an end thereof a functional group having a metal bonding property.

Abstract: A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer.

Abstract: The present invention provides a chip package, including: a chip having a semiconductor device thereon; a cap layer over the semiconductor device; a spacer layer between the chip and the cap layer, wherein the spacer layer surrounds the semiconductor device and forms a cavity between the chip and the cap layer; and an anti-reflective layer between the cap layer and the chip, wherein the anti-reflective layer has a overlapping region with the spacer layer and extends into the cavity. Furthermore, a method for fabricating a chip package is also provided.

Abstract: A method for forming a light emitting device includes providing a light emitting diode (LED) configured to emit light of a first color and providing a plurality of semi-spherical lenses made of a silicone material that contains no phosphor material. Each of the lenses has a layer of phosphor material attached thereto. The method also includes testing the plurality of lenses to select a subset of lenses that converts light of the first color to light of a second color. The method further includes forming the light emitting device using the LED, one of the selected subset of lenses, and a heat conductive substrate. In an embodiment, after the testing of the plurality of lenses, one of the selected subset of lenses is disposed overlying the LED. In another embodiment, the testing of the plurality of lenses is conducted with a light source other than the LED.

Abstract: A light emitting packaged diode ids disclosed that includes a light emitting diode mounted in a reflective package in which the surfaces adjacent the diode are near Lambertian reflectors. An encapsulant in the package is bordered by the Lambertian reflectors and a phosphor in the encapsulant converts frequencies emitted by the LED chip and, together with the frequencies emitted by the LED chip, produces white light. A substantially flat meniscus formed by the encapsulant defines the emitting surface of the packaged diode.

Abstract: A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.

Abstract: A light-emitting diode includes a substrate having a main surface, a light-emitting diode device arranged on the main surface, a translucent sealing resin portion sealing the light-emitting diode device so that the light-emitting diode device is implemented as an independent convex portion projecting from the main surface, and a reflector arranged on the main surface so as to surround an outer perimeter of the sealing resin portion with an inclined surface at a distance from the outer perimeter.

Abstract: Disclosed is a semiconductor light emitting device. An embodiment of the semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

Abstract: The light intensity emitted from a package is increased by adjusting a portion of the package encapsulant so that light impacting the side walls of the adjusted encapsulant portion will encounter total internal reflection (TIR) with the reflected light directed toward the top surface of the package. The adjusted portion of the package is positioned so that air can be used as the second (exterior) medium with the critical TIR angle being such that light emitted from a light source (such as from an LED die) will be directed primarily so as to escape the package from the top surface as opposed to being scattered internal to the package. In one embodiment, a lower portion of the encapsulant is surrounded by a casing to inwardly direct light from the light source that impacts the side of the encapsulant with an angle less than the critical TIR angle.

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

Abstract: Methods for forming a top-emitting organic light emitting display and a reflective type liquid crystal display are provided. The method for forming a top-emitting organic light emitting display comprises: providing a handling substrate; providing a composite layer on the handling substrate; forming an organic light emitting unit on the composite layer; and forming a top electrode on the organic light emitting unit.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: A light emitting assembly (10) includes a plurality of light emitting diodes (28) (L.E.D.s) serially aligned along a mounting surface (14) and a light shield (40) is disposed adjacent each L.E.D. An exterior surface of one light shield (40) is exposed to light emitting from an adjacent light shield (40). A non-reflective film (52) comprising a black color is painted over the exterior surface and a reflective material (54) is disposed over an interior surface of each light shield (40). The light shields (40) comprise sections (44) defined by a triangular shape joining at a ridge (48) and extending upwardly from the mounting surface (14) at an angle to define an opening for emitting light. The light shields (40) are spaced from the L.E.D.s at desired locations and angles to achieve full cutoff light emissions.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer.

Abstract: System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages that include thermal pad structures for dissipating heat generated by LED devices. In particular, thermal pad structures with large surface areas are used to allow heat to transfer. In certain embodiments, thick thermally conductive material is used to improve overall thermal conductivity of an LED package, thereby allowing heat generated by LED devices to dissipate quickly. Depending on the application, thermal pad structure, thick thermal conductive layer, and reflective surface may be individually adapted in LED packages or used in combinations. There are other embodiments as well.

Abstract: A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0?x?2, 0?y?2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0?x, 0?y, x+y?1) over the first buffer layer.

Abstract: This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device, and a light-redirecting member having an opening and a reflective surface next to the opening, wherein the opening is aligned directly above the semiconductor based light-emitting device, and the reflective surface redirects light emitted from the semiconductor-based light-emitting device to lateral directions.

Abstract: This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device thereon, a transparent body encapsulating the semiconductor based light-emitting device, and a reflective surface covering a predetermined region on a top of the transparent body, the reflective surface having an opening exposing the transparent body, wherein light emitted from the semiconductor based light-emitting device transmits through the opening of the reflective surface.

Abstract: A light emitting diode package including a substrate; a plurality of electrodes on the substrate; a light emitting diode on the substrate; at least one wire connecting the light emitting diode and at least a first electrode of the plurality of electrodes; a reflecting member formed around the light emitting diode and being spaced apart from the light emitting diode; a cavity included in the reflecting member; a mold material including in the cavity; and a heat sink disposed under the light emitting diode and configured to emit heat generated by the light emitting diode. Further, a connection portion connecting the plurality of electrodes extends under a surface of the substrate through a portion of the substrate, and an inside surface of the reflecting member has a step-shape structure.

Abstract: A light emitting diode includes: a first semiconductor layer; a second semiconductor layer formed on the first semiconductor layer; a light-converting pattern of a phosphor material formed on the second semiconductor layer; and a reflective layer of a metallic material formed on the second semiconductor layer and enclosing the light-converting pattern.

Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.

Abstract: There are provided a polymer dispersed liquid crystal (PDLC) display not using a backlight unit and a method of fabricating the same. The PDLC display comprises a rear substrate over which a thin film transistor (TFT), a first electrode, and a second electrode are formed, a front substrate apart from the rear substrate and having a first black matrix formed thereon corresponding to a region where the TFT is formed, a PDLC layer disposed below the first black matrix and formed between the front and rear substrates, a light source formed on one side of the PDLC layer and configured to provide light to the side of the PDLC layer, and a first reflection plate formed on the other side of the PDLC layer and configured to reflect light incident via the PDLC layer.

Abstract: A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location.

Abstract: A light emitting die package is provided which includes a metal substrate having a first surface and a first conductive lead on the first surface. The first conductive lead is insulated from the substrate by an insulating film. The first conductive lead forms a mounting pad for mounting a light emitting device. The package includes a metal lead electrically connected to the first conductive lead and extending away from the first surface.

Abstract: Provided are a light emitting module and a manufacturing method thereof, the light emitting module having improved heat radiation properties and improved adhesion between a sealing resin for sealing a light emitting element and other members. A light emitting module 10 includes: a metal substrate 12; a concave part 18 provided by partially denting an upper surface of the metal substrate 12; a light emitting element 20 accommodated in the concave part 18; and a sealing resin 32 covering the light emitting element 20. A convex part 11 is further provided on the upper surface of the metal substrate 40 in a region thereof surrounding the concave part 18. The sealing resin 32 is allowed to adhere to the convex part 11, thereby improving adhesion strength between the sealing resin 32 and the metal substrate 12.

Abstract: A light-emitting diode (LED) module includes a substrate, an LED, a first encapsulation element and a second light-pervious encapsulation element. The substrate has a first surface, a second surface, a circuit layer and an opening, wherein the opening penetrates through the first surface and the second surface, and the circuit layer includes at least one first conductive contact disposed on the first surface. The LED is disposed in the opening and is electrically connected to the first conductive contact. The first encapsulation element and the second light-pervious encapsulation element are respectively disposed on the first surface and the second surface, for encapsulating the LED and the first conductive contact. The aforementioned LED module may output light from the back of the LED, thereby improving the light output efficiency of the LED module. A manufacturing method of the aforementioned LED module is also herein disclosed.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract: A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.

Abstract: A light emitting diode structure, a lamp device and a method of forming a light emitting diode structure are provided. The structure has a substrate coated with a first reflective material; an electrode coated with a second reflective material, one or more layers of light emitting material, the layers disposed between the substrate and electrode; wherein in use, the first reflective material and second reflective material reflects light out of the structure via at least one light emitting surface and in a direction away from the electrode.

Abstract: AN LED chip package body provides an LED chip with a pad-installed surface, a plurality of pads disposed on the pad-installed surface and a rear surface formed opposite the pad-installed surface. The LED chip package body further has a light-reflecting coating disposed on the pad-installed surface of the LED chip and a plurality of pad-exposed holes for exposure of the corresponding pads of the LED chip. The LED chip package body further comprises a light-transparent element disposed on the rear surface of the LED chip and a plurality of conductive projecting blocks. Each of the conductive projecting blocks is disposed on the corresponding pad of the LED chip.

Abstract: An LED package is disclosed herein. The disclosed LED package comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a transfer molding process using a mold to have a predetermined shape. Further, the housing may be light-transmittable.

Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer.

Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

Abstract: This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of the light-emitting structure, or in-between that of the transparent substrate and the encapsulant material.