Abstract: A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity.

Abstract: A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

Abstract: A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.

Abstract: A light-emitting element includes: a light-emitting structure; a plurality of first contact portions separately on the light-emitting structure; and a plurality of reflective portions disposed separately among the plurality of first contact portions.

Abstract: A photosensor chip package structure comprises a substrate, a light-emitting chip and a photosensor chip including an ambient light sensing unit and a proximity sensing unit. The substrate has a first basin, a second basin and a light-guiding channel. The openings of the first and second basins respectively face different directions. One opening of the light-guiding channel and the opening of the first basin face the same direction. The other opening of the light-guiding channel interconnects with the second basin. The light-emitting chip is arranged in the first basin. The photosensor chip is arranged in the second basin. The light-guiding channel conducts the light generated by the light-emitting chip and the ambient light to the photosensor chip. The photosensor chip operates as soon as it receives the light generated by the light-emitting chip and/or the ambient light.

Abstract: A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

Abstract: A first exemplary device has a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The first exemplary device may further have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. A second exemplary device has a substrate, a nanowire and one or more photogates surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The second exemplary device may have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. The one or more photogates comprise an epitaxial layer.

Abstract: The present invention relates to a light emitted diode (LED). The LED includes a metal mirror, a bonding substrate, a distributed bragg reflector (DBR), a buffer layer, and a LED epitaxial structure. The bonding substrate is arranged under the metal mirror. The DBR is arranged on the metal mirror. The buffer layer is arranged on the DBR. The LED epitaxial structure is arranged on the buffer layer.

Abstract: A process of making a structure for encapsulating LED chips is provided with punching a reflective substrate into a reflective layer including through holes as reflective cups; punching an insulating substrate into an insulating layer including through holes, a flexible member having top and bottom formed with top and bottom layers of thermoset respectively, and top and bottom coatings formed on the top and bottom layers of thermoset respectively; punching a conductive substrate to form conductive members each having a solder pad and a lead leg; roughening bottom of the reflective layer; roughening top of the conductive substrate; filling an insulating material around the solder pads and the lead legs to form a lead frame; stacking and fastening the reflective layer, the insulating layer, and the lead frame fastened together; and electroplating the stack to form an airtight radiation emitting coating, thereby forming an LED chips encapsulation structure.

Abstract: A beam shaping lens and an LED lighting system are disclosed. The lens according to example embodiments can concentrate or spread light, depending on the specific embodiment used. The lens according to example embodiments of the invention includes repeated concentric rings of refractive features, with either a constant or gradient feature angle. These features may include substantially triangular concentric rings. These features are located on the interior face of the lens, facing the LED source. In some embodiments, the exterior or exit surface of the lens includes texturing. A lens according to example embodiments of the invention can be used with various fixtures. Light enters the lens through the entry surface including the concentric rings, and exits the fixture through a textured exit surface opposite the entry surface.

Abstract: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Abstract: A semiconductor light emitting device has a multilayer epitaxial structure for emitting light by a light emitting layer located between a first conductive layer and a second conductive layer. The multilayer epitaxial structure can be grown directly on a base substrate. A reflective layer can be provided in the multilayer epitaxial structure between the base substrate and the first conductive layer. A distributive Bragg reflector can be positioned adjacent the substrate. A surface of the multilayer epitaxial structure can be conformed to provide improved light extraction. A phosphorus film encapsulates the multilayer epitaxial structure and its respective side surfaces.

Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: The present invention provides a resin composition comprising a liquid crystal polyester and a titanium oxide filler, wherein when a value obtained by converting the content of aluminum in the titanium oxide filler to the content of aluminum oxide is A (% by weight) and the volume average particle diameter of the titanium oxide filler is B (?m), A and B satisfy the formula (I): A?0.1 and the formula (II): A/B2?25, a reflective board obtained by molding the resin composition, and a light-emitting apparatus comprising the reflective board and a light-emitting element. According to the resin composition of the present invention, a reflective board having high reflectance and high heat resistance can be obtained. Furthermore, a light-emitting apparatus which is excellent in properties such as luminance can be obtained by using the reflective board.

Abstract: A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20.

Abstract: Provided is a method of manufacturing a light emitting device capable of maintaining high optical output power while suppressing discoloration of the reflective film. A method of manufacturing a light emitting device according to an embodiment includes steps in an order of, preparing an electrically conductive member provided with a reflective film, disposing a light emitting element on the reflective film, and forming a protective film on the reflective film by using an atomic layer deposition method.

Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.

Abstract: A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies.

Abstract: A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

Abstract: A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer on an outer portion of the reflective layer, the protective layer including a first portion between the reflective layer and the second conductive layer, and a second portion that extends beyond the second conductive type semiconductor layer; and a light extraction structure including a compound semiconductor on the second portion of the protective layer.

Abstract: A light emitting assembly (10) includes a plurality of light emitting diodes (28) (L.E.D.s) serially aligned along a mounting surface (14) and a light shield (40) is disposed adjacent each L.E.D. An exterior surface of one light shield (40) is exposed to light emitting from an adjacent light shield (40). A non-reflective film (52) comprising a black color is painted over the exterior surface and a reflective material (54) is disposed over an interior surface of each light shield (40). The light shields (40) comprise sections (44) defined by a triangular shape joining at a ridge (48) and extending upwardly from the mounting surface (14) at an angle to define an opening for emitting light. The light shields (40) are spaced from the L.E.D.s at desired locations and angles to achieve full cutoff light emissions.

Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.

Abstract: Parallel plate slot emission array. In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection.

Abstract: An LED package structure includes a base and two diodes. The base includes an insulating layer having an outer peripheral edge, and a conductive bottom layer disposed on a bottom face of the insulating layer and having an outer peripheral edge spaced from the outer peripheral edge of the insulating layer at a predetermined distance. The insulating layer is formed with two spaced-apart through holes, and cooperates with the conductive bottom layer to form first and second cavities. The diodes are disposed within the first and second cavities, respectively. A transparent encapsulant covers the base and the diodes.

Abstract: Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of a second conductivity type, formed on the first semiconductor layer, a third semiconductor layer of the first conductivity type, formed on the second semiconductor layer, a fourth semiconductor layer of the second conductivity type, formed on the third semiconductor layer, a first electrode formed on a rear surface of the semiconductor substrate, and a second electrode formed on the fourth semiconductor layer, wherein the semiconductor multilayer reflection mirror includes a first selectively oxidized region and a first conductive region adjacent to the first oxidized region, and the first conductive region electrically connects the semiconductor s

Abstract: The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages.

Abstract: A switching element (a semiconductor device) (18) having a top gate electrode (21) and a bottom gate electrode (23) is provided with a silicon layer (a semiconductor layer) (SL) that is arranged between the top gate electrode (21) and the bottom gate electrode (a light-shielding film) (23) and that has a source region (24), a drain region (28), a channel region (26), and low-concentration impurity regions (25, 27). Furthermore, the bottom gate electrode (23) is arranged so as to overlap the channel region (26), a part of the low-concentration impurity region (25), which is adjacent to the source region (24), and a part of the low-concentration impurity region (27), which is adjacent to the drain region (28). The bottom gate electrode (23) is controlled so as to have a prescribed potential.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: Provided is a light emitting diode (LED) lamp assembly having an increased light incidence angle by fixing unit LED lamps fixed on a substrate at various angles. The LED lamp assembly includes a substrate having a socket portion and an LED mounting portion, first unit LED modules installed on both surfaces of the substrate and irradiating light onto the both surfaces of the substrate in a frontward direction, and second unit LED modules irradiating light onto the both surface of the substrate in directions other than the frontward direction. In the LED lamp assembly, since first and second unit LED modules having light irradiation units formed at different positions are installed on both surfaces of a single substrate, light can be irradiated in a radial direction.

Abstract: An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a second area around the first area. The first area contains yellow phosphor therein, and the second area contains red phosphor therein. The electrochromic element has an opening through which the first area of the encapsulant is exposed. The second area of the encapsulant is covered by the electrochromic element. The electrochromic element can change its color when being electrified, thereby changing the color temperature of the light output from the LED unit.

Abstract: The present invention provides a lighting device, including: a second OLED layer formed on a window; a solar cell formed on the second OLED layer; and a first OLED layer formed on the solar cell.

Abstract: A light emitting diode (LED) includes a reflective member, a light transmitting member, and a light emitting component. The light transmitting member is disposed on the reflective member. The light emitting component is disposed on the light transmitting member. The light transmitting member is configured to pass, at the first surface, light propagating from the light emitting component toward the reflective member, and further configured to, at the first surface, totally internally reflect the light reflected from the reflective member.

Abstract: A light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

Abstract: This disclosure provides systems, methods and apparatus for encapsulating a display device. In one aspect, an interferometric modulator (IMOD) is formed on a substrate. The IMOD includes an absorbing layer separated from the substrate, a reflective layer between the absorbing layer and the substrate, and an optical gap between the absorbing layer and the reflective layer. One or more thin film encapsulation layers hermetically seal the IMOD between the one or more thin film encapsulation layers and the substrate. In another aspect, an optical or functional layer can be formed over the one or more thin film encapsulation layers.

Abstract: A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a wavelength conversion unit disposed on the substrate to cover at least an upper surface of the light emitting element; and a reflection unit formed to cover a side surface and a lower surface of the substrate and having a resin and a reflective filler dispersed in the resin. Light emitting devices having uniform characteristics can be obtained by minimizing a chromaticity distribution of white light with respect to the different light emitting devices.

Abstract: The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (160); and a first electrode (200), which is the cathode, is formed on the p-type semiconductor layer (160). Also, between the p-type semiconductor layer (160) and a reflecting layer (220b), the first electrode (200) is provided with a crystalline first transparent electrode layer (210) and a non-crystalline second transparent electrode layer (220a). The crystalline first transparent electrode layer (210) increases adhesion with the p-type semiconductor layer (160), and the non-crystalline second transparent electrode layer (220a) suppresses delamination of the reflecting layer (220b). Also, the first transparent electrode layer (210) and the second transparent electrode layer (220a) transmit light emitted from the light-emitting layer and suppress degradation of reflective characteristics.

Abstract: An illumination assembly is provided which is capable of correcting a color temperature. The assembly includes a substrate with a plurality of coatings applied on a respective plurality of surface portions of a base material. A light emitting device includes one or more light emitting elements of a first color temperature mounted on surface portions of the substrate having a first color coating, and one or more light emitting elements having a second color temperature mounted on surface portions of the substrate having a second color coating. Light emitting elements are individually sealed with a resin containing an excitable phosphor, with a reflectance factor of the first color coating and a reflectance factor of the second color coating set corresponding to light emitted from the light emitting elements having the first and second color temperatures, respectively, with respect to a desired color temperature for the light emitting device.

Abstract: A photosensor chip package structure comprises a substrate, a light-emitting chip and a photosensor chip including an ambient light sensing unit and a proximity sensing unit. The substrate has a first basin, a second basin and a light-guiding channel. The openings of the first and second basins respectively face different directions. One opening of the light-guiding channel and the opening of the first basin face the same direction. The other opening of the light-guiding channel interconnects with the second basin. The light-emitting chip is arranged in the first basin. The photosensor chip is arranged in the second basin. The light-guiding channel conducts the light generated by the light-emitting chip and the ambient light to the photosensor chip. The photosensor chip operates as soon as it receives the light generated by the light-emitting chip and/or the ambient light.

Abstract: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

Abstract: The present invention provide a surface light source, wherein, the surface light source comprises a LED light source, the diffusion plate and condenser plant. The diffusion plate has a phosphor, and the diffusion plate and the LED light source are disposed separately to form a heat dissipation space. The condenser device disposes between the LED light source and the diffuser plate for converging the light emitted from LED light source to the diffusion plate.

Abstract: A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.

Abstract: A side-view type light emitting device includes a package body, a lead frame, and a light emitting diode (LED). The package body has a first surface provided as a mount surface, a second surface disposed on a side opposite to the first surface, and lateral surfaces disposed between the first surface and the second surface. The package body includes a recessed portion disposed on a lateral surface corresponding to a light emitting surface of the lateral surfaces. The lead frame is disposed in the package body. The LED chip is mounted on a bottom surface of the recessed portion. Protrusion parts protruding toward the LED chip are disposed in regions adjacent to the LED chip of facing inner sidewalls of the recessed portion, respectively.

Abstract: A light-emitting element includes: a light-emitting stack including an uneven upper surface; a transparent conductive layer formed on the uneven upper surface; an insulating layer formed on the transparent conductive layer, and partial regions of the transparent conductive layer are exposed; a reflective layer formed on the transparent conductive layer and the insulating layer; and a contact interface including a current blocking area formed between the insulating layer and the reflective layer; and a plurality of first contact regions formed between the transparent conductive layer and the reflective layer.

Abstract: One embodiment of the present invention provides a packaged optoelectronic module. The module includes a photonic chip having a top surface and a first substrate that includes a plurality of vias and a reflective surface. The photonic chip is flip-chip bonded to the first substrate with the top surface facing the first substrate. The vias facilitate electrical connections to the top surface, and the reflective surface forms an angle with the top surface, thereby enabling optical coupling between the top surface and an optical fiber placed in a direction that is substantially parallel to the top surface.