Reflective Means (epo) Patents (Class 257/E33.072)
  • Patent number: 8598614
    Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: December 3, 2013
    Assignee: Epistar Corporation
    Inventors: Chao-Hsing Chen, Yu-Chen Yang, Li-Ping Jou, Hui-Chun Yeh, Yi-Wen Ku
  • Patent number: 8592843
    Abstract: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive type semiconductor layer, an active layer over the first conductive type semiconductor layer, and a second conductive type semiconductor layer over the active layer; a dielectric layer formed in each of a plurality of cavities defined by removing a portion of the light emitting structure; and a second electrode layer over the dielectric layer.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: November 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Publication number: 20130308309
    Abstract: Solid state transducer (“SST”) devices with selective wavelength reflectors and associated systems and methods are disclosed herein. In several embodiments, for example, an SST device can include a first emitter configured to emit emissions having a first wavelength and a second emitter configured to emit emissions having a second wavelength different from the first wavelength. The first and second emitters can be SST structures and/or converter materials. The SST device can further include a selective wavelength reflector between the first and second emitters. The selective wavelength reflector can be configured to at least substantially transmit emissions having the first wavelength and at least substantially reflect emissions having the second wavelength.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 21, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov
  • Publication number: 20130306964
    Abstract: A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 21, 2013
    Applicant: Starlite LED Inc
    Inventor: Chang HAN
  • Publication number: 20130307002
    Abstract: A light-emitting device comprises a semiconductor light emitting stack and an electrode on the semiconductor light emitting stack, wherein the electrode comprises a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer, and a barrier layer inserted between the mirror layer and the bonding layer and covers the mirror layer to prevent the mirror layer reacting with the bonding layer, wherein the barrier layer comprises a first pair of different metals.
    Type: Application
    Filed: May 17, 2012
    Publication date: November 21, 2013
    Inventors: Ting-Chia Ko, De-Shan Kuo, Chien-Kai Kuo, Tsun-Kai Ko
  • Patent number: 8587133
    Abstract: An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device includes a semiconductor chip provided on a lead frame, which are encapsulated with an encapsulating resin. Lead frames are provided in both sides of the lead frame. A portion of the lead frame is encapsulated with the encapsulating resin to function as an inner lead. The encapsulating resin is composed of a resin composition that contains substantially no halogen. Further, an exposed portion of the Al pad provided in the semiconductor chip is electrically connected to the inner lead via the AuPd wire.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: November 19, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Mitsuru Ohta, Tomoki Kato
  • Patent number: 8581284
    Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer formed around the chip, a transparent plate located on the wavelength converting layer and a diffusing reflection member disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate. The device can be configured to improve the linearity of a boundary between the diffusing reflection member and both side surfaces by using the transparent plate, and therefore can be used for a headlight that can form a favorable horizontal cut-off line corresponding to the boundary via a projector lens without a shade.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: November 12, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Toshihiro Seko
  • Patent number: 8581287
    Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: November 12, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Takeshi Waragaya, Kosaburo Ito, Toshihiro Seko, Kazuhiko Ueno, Soji Owada
  • Patent number: 8581285
    Abstract: The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 ?m but not greater than 30 ?m.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: November 12, 2013
    Assignees: Citizen Holdings Co., Ltd., Citizen Electronics Co., Ltd.
    Inventor: Kazuaki Sorimachi
  • Patent number: 8581289
    Abstract: A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: November 12, 2013
    Assignees: NCKU Research and Development Foundation, Phostek, Inc.
    Inventors: Ray-Hua Horng, Yi-An Lu
  • Publication number: 20130292636
    Abstract: Solid state transducer (“SST”) assemblies with remote converter material and improved light extraction efficiency and associated systems and methods are disclosed herein. In one embodiment, an SST assembly has a front side from which emissions exit the SST assembly and a back side opposite the front side. The SST assembly can include a support substrate having a forward-facing surface directed generally toward the front side of the SST assembly and an SST structure carried by the support substrate. The SST structure can be configured to generate SST emissions. The SST assembly can further include a converter material spaced apart from the SST structure. The forward-facing surface and the converter material can be configured such that at least a portion of the SST emissions that exit the SST assembly at the front side do not pass completely through the converter material.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov
  • Patent number: 8575644
    Abstract: Provided are a light emitting device and a light emitting device package. According to the light emitting device, a light emitting part and an electro-static discharge (ESD) protection part are disposed on a conductive support member. A connection layer electrically connects a first conducitve type semiconductor layer of the light emitting part to a second conductive type semiconductor layer of the ESD protection part. A ptrtection member is disposed on the connection layer and the ESD protection layer.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: November 5, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee, Jung Hyeok Bae, Kwang Ki Choi, June O Song
  • Publication number: 20130285087
    Abstract: A light emitting device and manufacturing method thereof are disclosed. The light emitting device includes a substrate, a LED die, a first transparent layer, an optical wavelength conversion layer and a second transparent layer. The substrate has a die glue part. The LED die is disposed on the die glue part and has a base which is made of a transparent material. The first transparent layer is disposed on the side surface of the LED die. The optical wavelength conversion layer is evenly formed on the first transparent layer and the LED die. The second transparent layer is formed on the optical wavelength conversion layer.
    Type: Application
    Filed: June 22, 2012
    Publication date: October 31, 2013
    Inventors: Horng-Jou WANG, Shao-Yu Chen, Chia-Hua Liu
  • Patent number: 8569783
    Abstract: An organic EL light-emitting device with excellent total luminous flux or with reduced emission unevenness and low power consumption is provided. Light from an organic EL layer in a region sandwiched between a light-transmitting conductive film of a lower electrode and a light-reflecting conductive film of an upper electrode is selectively emitted to the lower electrode side, and extracted outside by a first optical structure body. Light from the organic EL layer in a region sandwiched between a light-reflecting conductive film of the lower electrode and a light-transmitting conductive film of the upper electrode is selectively emitted to the upper electrode side, and extracted outside by a second optical structure body. The first optical structure body and the second optical structure body are formed on different planes and can overlap with each other; thus, light from the organic EL layer can be efficiently extracted outside.
    Type: Grant
    Filed: February 11, 2012
    Date of Patent: October 29, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoya Aoyama, Satoshi Seo, Satoko Shitagaki
  • Patent number: 8569778
    Abstract: A Plastic Leaded Chip Carrier (PLCC) package is disclosed. The PLCC package enables a narrow viewing angle without requiring a second lens. In particular, the PLCC package is provided with a reflector cup having multiple stages where the geometry or some other characteristic of one stage is different from the geometry or some other characteristic of another stage.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: October 29, 2013
    Assignee: Intellectual Discovery Co., Ltd.
    Inventors: Eng Chuan Ong, Meng Ee Lee, Chiau Jin Lee
  • Patent number: 8569779
    Abstract: An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation.
    Type: Grant
    Filed: August 15, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Kai-Lun Wang, Shih-Yuan Hsu, Hou-Te Lin
  • Patent number: 8569789
    Abstract: An LED package includes a substrate, a transparent base, an LED chip and a reflective layer. The substrate has an upper surface. The transparent base is arranged on the upper surface of the substrate. The transparent base includes a first surface away from the substrate and a second surface opposite to the first surface. The LED chip is arranged on the first surface of the transparent base. The reflective layer is arranged between the substrate and the second surface of the transparent base.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chao-Hsiung Chang, Hou-Te Lin
  • Patent number: 8569781
    Abstract: An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 29, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Pi-Chiang Hu, Shih-Yuan Hsu, Kai-Lun Wang
  • Patent number: 8563340
    Abstract: A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: October 22, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
  • Patent number: 8552453
    Abstract: A light emitting device, which has: a light emitting element; a package that comprises a concavity for holding the light emitting element, and that has on its side wall where the concavity is integrally formed a light reflector for reflecting light from the light emitting element and a light transmitter for transmitting light from the light emitting element to the outside.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: October 8, 2013
    Assignee: Nichia Corporation
    Inventor: Kenji Takine
  • Patent number: 8552452
    Abstract: Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: October 8, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee, Young kyu Jeong, Chung song Kim, June O Song, Kwang Ki Choi, Eun Joo Kim
  • Publication number: 20130256722
    Abstract: The present invention relates to a light emitted diode (LED). The LED includes a metal mirror, a bonding substrate, a distributed bragg reflector (DBR), a buffer layer, and a LED epitaxial structure. The bonding substrate is arranged under the metal mirror. The DBR is arranged on the metal mirror. The buffer layer is arranged on the DBR. The LED epitaxial structure is arranged on the buffer layer.
    Type: Application
    Filed: August 10, 2012
    Publication date: October 3, 2013
    Applicant: LEXTAR ELECTRONICS CORP.
    Inventors: SHIH-PU YANG, JUI-YI CHU
  • Publication number: 20130240928
    Abstract: An LED package includes an LED light source and an optical lens located over the LED light source. The optical lens includes a top surface, a light reflective lateral surface and a bottom surface receiving the LED light source therein. The top surface includes a reflection surface located in the middle of the top surface and a refraction surface surrounding the reflection surface. The top surface receives light emitted from the LED light source, and the light striking the reflection surface is firstly reflected towards the lateral surface by the reflection surface, secondly reflected towards the refraction surface by the lateral surface, and finally refracted out of the optical lens by the refraction surface.
    Type: Application
    Filed: October 23, 2012
    Publication date: September 19, 2013
    Inventor: YAU-TZU JANG
  • Publication number: 20130234183
    Abstract: An LED module comprises an LED chip and a lens matching with the LED chip. The lens comprises a light-guiding portion and a rough portion protruded from the light-guiding portion. A cavity is defined in a bottom of the light-guiding portion. The LED chip is received in the cavity. The light-guiding portion comprises a top surface. Part of light emitted from the LED chip is reflected to an interior of the lens by the top surface of the light-guiding portion, and traveling to the rough portion then being reflected or refracted by the rough portion, and finally traveling out of the lens through the top surface of the light-guiding portion.
    Type: Application
    Filed: September 14, 2012
    Publication date: September 12, 2013
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: MING-TA TSAI, CHAO-HSIUNG CHANG
  • Publication number: 20130234149
    Abstract: A light emitting diode is made using a laser to texture the sidewalls of the bottom contact layer, without damaging a mesa. To do so, the substrate is mounted on a laser machining platform, and trenches are cut along lines through the semiconductor layer on the substrate using a first sequence of laser pulses having short pulse lengths that result in formation of textured sidewalls in the trenches, without causing recasting of the material. Then the substrate can be scribed along the lines of the trenches using a second sequence of laser pulses for singulation of die.
    Type: Application
    Filed: March 9, 2012
    Publication date: September 12, 2013
    Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC.
    Inventors: JONATHAN D. HALDERMAN, JUAN CHACIN, IRVING CHYR
  • Publication number: 20130234167
    Abstract: Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.
    Type: Application
    Filed: July 31, 2012
    Publication date: September 12, 2013
    Applicant: FUJI XEROX CO., LTD.
    Inventors: Taku KINOSHITA, Kazutaka TAKEDA, Takashi KONDO, Hideo NAKAYAMA
  • Publication number: 20130228809
    Abstract: A semiconductor structure includes a temporary substrate; a first semiconductor layer positioned on the temporary substrate; a dielectric layer comprising a plurality of patterned nano-scaled protrusions disposed on the first semiconductor layer; a dielectric layer surrounding the plurality of patterned nano-scaled protrusions and disposed on the first semiconductor layer; and a second semiconductor layer positioned on the dielectric layer, wherein the top surfaces of the patterned nano-scaled protrusions are in contact with the bottom of the second semiconductor layer. An etching process is performed on the semiconductor structure to separate the first semiconductor layer and the second semiconductor layer, in order to detach the temporary substrate from the second semiconductor layer and transfer the second semiconductor layer to a permanent substrate.
    Type: Application
    Filed: March 1, 2012
    Publication date: September 5, 2013
    Applicant: DESIGN EXPRESS LIMITED
    Inventors: CHUN-YEN CHANG, PO-MIN TU, JET-RUNG CHANG
  • Patent number: 8519379
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: August 27, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8519419
    Abstract: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: August 27, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
  • Publication number: 20130214294
    Abstract: A light-emitting device comprises a support base having a planar surface, a semiconductor stacked structure disposed on the planar surface, the semiconductor stacked structure comprising a first semiconductor layer, an active layer, a second semiconductor layer, a current block region formed in one of the first semiconductor layer and the second semiconductor layer and physically contacts the planar surface and an electrode disposed on the semiconductor stacked structure.
    Type: Application
    Filed: February 17, 2012
    Publication date: August 22, 2013
    Applicant: EPISTAR CORPORATION
    Inventor: Tsung-Hsien YANG
  • Patent number: 8513695
    Abstract: An LED package includes a substrate, an LED die, electrodes, a reflective cup, a barrier portion and an encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The electrodes are formed on the substrate and spaced from each other. The barrier portion is formed on the electrodes and covered by the reflective cup, wherein a bonding force between the barrier portion and the electrodes is larger than that between the reflective cup and the electrodes. The LED die is mounted on one of the electrodes, received in the reflective cup and electrically connected to the electrodes via wire bonding. The disclosure also provides a method for making an LED package.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: August 20, 2013
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Hsin-Chiang Lin, Pin-Chuan Chen
  • Patent number: 8513693
    Abstract: A package for a light source is disclosed. In particular, a Plastic Leaded Chip Carrier (PLCC) is described which provides many features offered by traditional surface mount technology lamps, but also has a decreased height, increased light output, and enables a smaller viewing angle as compared to traditional surface mount technology lamps.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: August 20, 2013
    Assignee: Intellectual Discovery Co., Ltd.
    Inventors: Hooi Choo Kang, Keat Chuan Ng
  • Patent number: 8513681
    Abstract: A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: August 20, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Min Hwang, Hyun Don Song, Hyun Kyong Cho
  • Publication number: 20130207141
    Abstract: A lighting device includes an electrically activated emitter, a first layer that contains a first encapsulant material, and a second layer that contains a second encapsulant material, with a textured interface between the first layer and the second layer. Additional layers including further encapsulant materials and/or lumiphoric materials may be provided. Multiple textured interfaces may be provided. Textured interfaces may be arranged as lenses, including Fresnel lenses.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 15, 2013
    Applicant: CREE, INC.
    Inventor: Jesse Reiherzer
  • Publication number: 20130210178
    Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a light-emitting structure on the substrate, wherein the light-emitting structure comprising a plurality of chip areas and a plurality of street areas; forming a conductive structure between the substrate and the light-emitting structure; removing a part of the light-emitting structure in the street areas to expose a sidewall in the chip areas; forming a first passivation layer on the light-emitting structure in the chip areas; and forming a second passivation layer in the street areas, the sidewalls of the light-emitting structure, and the sidewalls of the first passivation layer.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 15, 2013
    Applicant: Epistar Corporation
    Inventors: Cheng-Hsien Li, Chi-Hao Huang, Hsin-Hsiung Huang
  • Publication number: 20130200400
    Abstract: A printed circuit board (PCB) having an individual reflective structure and a method for manufacturing a light emitting diode (LED) package using the same, which can prevent reabsorption of light between LED chips by providing an individual reflective structure between the LED chips when the LED package is configured using two or more LED chips. The PCB includes a PCB; a wiring pattern-forming material layer formed on the PCB with an insulating layer interposed therebetween; dams formed on the wiring pattern-forming layer around chip mounting areas of the PCB; and a light reabsorption prevention dam formed on the wiring pattern-forming material layer between the chip mounting areas where LED chips are mounted.
    Type: Application
    Filed: July 27, 2012
    Publication date: August 8, 2013
    Applicants: DOOSUNG ADVANCED TECHNOLOGY CO., LTD.
    Inventor: Jong-Jin JANG
  • Patent number: 8502249
    Abstract: A semiconductor light-emitting device capable of improving current distribution, and a method for manufacturing the same is disclosed, wherein the semiconductor light-emitting device comprises a substrate; an N-type nitride semiconductor layer on the substrate; an active layer on the N-type nitride semiconductor layer; a P-type nitride semiconductor layer on the active layer; a groove in the P-type nitride semiconductor layer to form a predetermined pattern in the P-type nitride semiconductor layer; a light guide of transparent non-conductive material in the groove; and a transparent electrode layer on the P-type nitride semiconductor layer with the light guide.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: August 6, 2013
    Assignee: LG Display Co., Ltd.
    Inventors: Ung Lee, Yoon Seok Park, Won Keun Cho, So Young Jang
  • Patent number: 8502261
    Abstract: Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: August 6, 2013
    Assignee: Cree, Inc.
    Inventor: Ban P. Loh
  • Publication number: 20130187175
    Abstract: A multi-layer array type LED device is provided, which includes a substrate, an encapsulation body, two lead frames, a plurality of LED dices, and a set of optical lens. The outer circumferential edge and the upper and lower periphery of the substrate are completely encapsulated by the encapsulation body so that the multi-layer array type LED device can be tightly packaged. In the present invention, a fluorescent layer is disposed between an optical grease layer and a silica gel protection layer, and thereby the fluorescent layer is protected, and is capable of preventing moisture from permeating therein. On the other hand, in the present invention, the reflection coefficient of the optical grease layer is at least larger than a certain value so that the probability of the light emitted out of the optical chamber can be increased.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 25, 2013
    Inventors: JON-FWU HWU, Yung-Fu Wu, Kui-Chiang Liu
  • Publication number: 20130189806
    Abstract: A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.
    Type: Application
    Filed: July 3, 2012
    Publication date: July 25, 2013
    Applicant: DISCO CORPORATION
    Inventor: Hitoshi Hoshino
  • Publication number: 20130181615
    Abstract: Disclosed is a display device, the device including a light emitting part including a first electrode, an organic light emitting layer and a second electrode for radiating light of a first wavelength, a pixel part stacked on the light emitting part to radiate light of a second wavelength using a reflective light, and a capping layer arranged between the light emitting part and the pixel part to reflect the light of the first wavelength and to transmit the light of the second wavelength, whereby legibility, color reproduction range and power consumption can be enhanced.
    Type: Application
    Filed: January 26, 2012
    Publication date: July 18, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventor: Jeong Ik LEE
  • Publication number: 20130181227
    Abstract: The LED package comprises a substrate with a first conductive type through-hole and a second conductive type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having first conductive type pad and second conductive type pad, wherein the first conductive type pad is aligned with the first conductive type through-hole; a slanting structure of dielectric layer formed adjacent at least one side of the LED die for carrying conductive traces; a conductive trace formed on upper surface of the slanting structure to offer path between the second conductive type pad and the conductive type through-hole; and a refilling material within the first conductive type through-hole and second conductive type through-hole.
    Type: Application
    Filed: January 12, 2012
    Publication date: July 18, 2013
    Applicant: KING DRAGON INTERNATIONAL INC.
    Inventor: Wen Kun YANG
  • Publication number: 20130175562
    Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 11, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov, Lifang Xu
  • Publication number: 20130175563
    Abstract: An LED package structure includes: a substrate having a die attach pad; a first insulating layer formed on the die attach pad and having a plurality of openings; an LED chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; a second insulating layer formed on the inactive surface and having a plurality of openings, wherein the LED chip is disposed on the substrate with the openings of the second insulating layer corresponding in position to the openings of the first insulating layer; and a plurality of metallic thermal conductive elements formed in the openings of the first insulating layer and the corresponding openings of the second insulating layer, thereby effectively alleviating the conventional problem of thermal stresses induced by a mismatch in CTEs of the LED chip and the substrate.
    Type: Application
    Filed: August 14, 2012
    Publication date: July 11, 2013
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Yuen-Han Wang, Sheng-Li Lu, Kuan-Yu Yang, Hsien-Wen Chen, Jih-Fu Wang
  • Patent number: 8476663
    Abstract: A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: July 2, 2013
    Assignee: Phostek, Inc.
    Inventors: Ray-Hua Horng, Yi-An Lu
  • Patent number: 8476655
    Abstract: An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: July 2, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Herbert Brunner, Kirstin Petersen
  • Patent number: 8471287
    Abstract: An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface for emitting light of the LED package. The electrode structure is sandwiched between the first substrate and the second substrate. The LED die is mounted in the substrate and electrically connected to the electrode structure. The reflective layer is formed on an outer surface of the substrate except the emitting surface and the bulging portions. The disclosure also provides a method for manufacturing such an LED package.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: June 25, 2013
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventors: Pi-Chiang Hu, Shih-Yuan Hsu
  • Patent number: 8466483
    Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (D): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; and (D) at least one antioxidant selected from the group consisting of hindered-phenol antioxidants, sulfide antioxidants and hindered-amine antioxidants.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: June 18, 2013
    Assignee: Nitto Denko Corporation
    Inventors: Hidenori Ohnishi, Kohei Nakamura, Kazuhiro Fuke, Shinya Ota
  • Publication number: 20130146913
    Abstract: An electronic device including an insulating substrate, a chip and a patterned conductive layer is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The chip is disposed above the upper surface of the insulating substrate. The patterned conductive layer is disposed between the upper surface of the insulating substrate and the chip. The chip is electrically connected to an external circuit via the patterned conductive layer. Heat generated by the chip is transferred to external surroundings via the patterned conductive layer and the insulating substrate.
    Type: Application
    Filed: November 6, 2012
    Publication date: June 13, 2013
    Inventors: Po-Jen Su, Yun-Li Li, Cheng-Yen Chen, Gwo-Jiun Sheu
  • Publication number: 20130146912
    Abstract: An electronic device including an insulating substrate, a plurality of conductive vias and a chip is provided. The insulating substrate has an upper surface and a lower surface opposite to each other. The conductive vias pass through the insulating substrate. The chip is disposed on the upper surface of the insulating substrate and includes a chip substrate, a semiconductor layer and a plurality of contacts. The semiconductor layer is located between the chip substrate and the contacts. The contacts are electrically connected to the conductive vias. The material of the insulating substrate and the material of the chip substrate are the same.
    Type: Application
    Filed: November 6, 2012
    Publication date: June 13, 2013
    Inventors: Po-Jen Su, Yun-Li Li, Cheng-Yen Chen, Gwo-Jiun Sheu