Abstract: The present invention provides a holder on chip module structure including a substrate. A chip is configured on the substrate, with a sensing area. A holder is disposed on the substrate, wherein a portion of the holder is directly contacted to the chip to reduce the tilt between the chip and the holder. A transparent material is disposed on the holder, substantially aligning to the sensing area. A lens holder is disposed on the holder, and a lens is configured on the lens holder, substantially aligning to the transparent material and the sensing area.

Abstract: Disclosed are a light emitting device package and a lighting system including the same. The light emitting device package includes a first lead frame and a second lead frame disposed on an insulating layer and electrically separated from each other by a separation part, and a light emitting device disposed on the second lead frame and electrically connected to the first lead frame, and the second lead frame includes a through part disposed opposite to the separation part such that the light emitting device is located therebetween.

Abstract: A solid-state light-emitting element includes a structure body having a property of transmitting visible light and an uneven structure on each of the top side and the bottom side thereof; a high refractive index material layer provided on one surface of the structure body; and a light-emitting body with a refractive index of greater than or equal to 1.6 provided over the high refractive index material layer. One surface of the high refractive index material layer is flatter than the other surface thereof which is in contact with the structure body. The refractive index of the high refractive index material layer is greater than or equal to 1.6. The refractive index of the structure body is greater than 1.0 and less than that of the high refractive index material layer.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer. Each of the plurality of air-lenses has a thickness less than that of the first semiconductor layer.

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract: A light emitting diode (LED) package is provided. The LED package includes an LED, a plurality of lead frames electrically connected with the LED, a package body having a receiving groove exposed to receive the LED therein and including a plurality of supporting units provided to project from an inner side surface of the receiving groove, and a filling member having an engaging groove engaged with the supporting unit at a circumference of a side surface thereof, and included inside the receiving groove.

Abstract: There is provided a nitride semiconductor light-emitting element including a transparent conductor, a first conductivity-type nitride semiconductor layer, a light-emitting layer, and a second conductivity-type nitride semiconductor layer, the first conductivity-type nitride semiconductor layer, the light-emitting layer, and the second conductivity-type nitride semiconductor layer being successively stacked on the transparent conductor. There is also provided a nitride semiconductor light-emitting element including a first transparent conductor, a metal layer, a second transparent conductor, a first conductivity-type nitride semiconductor layer, a light-emitting layer, and a second conductivity-type nitride semiconductor layer, the metal layer, the second transparent conductor, the first conductivity-type nitride semiconductor layer, the light-emitting layer, and the second conductivity-type nitride semiconductor layer being successively stacked on the first transparent conductor.

Abstract: An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.

Abstract: An LED lens includes a recess disposed in a quadrangular bottom surface of the LED lens and configured to have a light source disposed therein, wherein an internal surface of the recess, including lateral surfaces and top surfaces, is a light incident surface. The LED lens further includes a top surface forming a light exit surface, having a size greater than that of the bottom surface, and having a quadrangular shape; and lateral surfaces of the LED lens, disposed between the top and bottom surfaces of the LED lens, forming a reflective surface, and guiding light incident to the LED lens through the light incident surface to the light exit surface. The top surfaces of the light incident surface form an inverted quadrangular pyramid.

Abstract: A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.

Abstract: An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is surrounded by the conversion element (4) and the connection carrier (2), and the conversion element (4) consists of one of the following materials: ceramic, glass ceramic.

Abstract: Encapsulated LEDs can be made by taking a mold tool defining a cavity that defines a lens shape and providing a patterned release film defining the inverse of a microstructure in a surface of the film. The patterned release film is conformed to the cavity of the mold tool. An LED chip is placed in a spaced relationship from the patterned release film in the cavity. A resin is then introduced into the space between the LED chip and the patterned release film in the cavity. The resin is cured in the space between the LED chip and the patterned release film in the cavity while contact is maintained between the patterned release film and the curing resin. The encapsulated LED is then freed from the mold tool and the patterned release film.

Abstract: LED dies are suspended in an ink and printed on a first support substrate to form a light emitting layer having a light emitting surface emitting primary light, such as blue light. A mixture of a transparent binder, phosphor powder, and transparent glass beads is formed as an ink and printed over the light emitting surface. The mixture forms a wavelength conversion layer when cured. The beads are preferably sized so that the tops of the beads protrude completely through the conversion layer. Some of the primary light passes through the beads with virtually no attenuation or backscattering, and some of the primary light is converted by the phosphor to secondary light. The combination of the secondary light and the primary light passing though the beads may form white light. The overall color is highly controllable by controlling the percentage weight of the beads.

Abstract: A lens arrangement for an LED display device includes a lens. The lens has a first lens surface and an optical axis. The optical axis penetrates the first lens surface of the lens. Furthermore, the lens arrangement includes a transparent transition body, which is firmly coupled with the lens on the first lens surface, which is more temperature-resistant than the lens and which has an optical axis that is parallel to the optical axis of the lens.

Abstract: A method for manufacturing a structure having a textured surface, including a substrate made of mineral glass having a given texture, for an organic-light-emitting-diode device, the method including supplying a rough substrate, having a roughness defined by a roughness parameter Ra ranging from 1 to 5 ?m over an analysis length of 15 mm and with a Gaussian filter having a cut-off frequency of 0.8 mm; and depositing a liquid-phase silica smoothing film on the substrate, the film being configured to smooth the roughness sufficiently and to form the textured surface of the structure.

Abstract: A light emitting diode (LED) package comprising a substrate with an LED chip mounted to the substrate and in electrical contact with it. An inner material covers the LED chip, and a lens covers the inner material with the lens material being harder than the inner material. An adhesive is arranged between the substrate and the lens to hold the lens to the substrate and to compensate for different coefficients of thermal expansion (CTE) between the lens and the remainder of the package. A method for forming an LED package comprises providing a substrate with a first meniscus ring on a surface of the substrate. An LED chip is mounted to the substrate, within the meniscus ring. An inner material is deposited over the LED chip, and a lens material in liquid form is deposited over the inner material. The lens material held in a hemispheric shape by the first meniscus feature and the lens material is cured making it harder than the inner material.

Abstract: A beam shaping lens and an LED lighting system are disclosed. The lens according to example embodiments can concentrate or spread light, depending on the specific embodiment used. The lens according to example embodiments of the invention includes repeated concentric rings of refractive features, with either a constant or gradient feature angle. These features may include substantially triangular concentric rings. These features are located on the interior face of the lens, facing the LED source. In some embodiments, the exterior or exit surface of the lens includes texturing. A lens according to example embodiments of the invention can be used with various fixtures. Light enters the lens through the entry surface including the concentric rings, and exits the fixture through a textured exit surface opposite the entry surface.

Abstract: An LED lighting assembly integrated with dielectric liquid lens, including: a heat dissipation substrate; an LED chip, located on the heat dissipation substrate; a transparent material, covering the heat dissipation substrate and the LED chip and having a curved surface; a transparent liquid, located above the transparent material; a transparent layer, located above the transparent liquid; a first dielectric liquid, located above the transparent layer; a second dielectric liquid, located above the first dielectric liquid and having a curved surface, wherein the second dielectric liquid has a second dielectric constant smaller than a first dielectric constant of the first dielectric liquid; a transparent electrode layer, located above the second dielectric liquid for applying a control voltage to generate a dielectric force on the second dielectric liquid; and an enclosing body.

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

Abstract: A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

Abstract: A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

Abstract: A method for providing, on a carrier (40), an insulative spacer layer (26) which is patterned such that a cavity (27) is formed which enables connection of an optical semiconductor element (41) to the intended conductor structure (22) when placed inside the cavity (27). The cavity (27) is formed such that it, through its shape, extension and/or depth, accurately defines a location of an optical element (45; 61) in relation to the optical semiconductor element (41). Through the provision of such a patterned insulative spacer layer, compact and cost-efficient optical semiconductor devices can be mass-produced based on such a carrier without the need for prolonged development or acquisition of new and expensive manufacturing equipment.

Abstract: Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include Sn1-xBixO2 where x?0.10, Zn2SnO2, Sn1-xAlxO2 where x?0.18, and Sn1-xMgxO2 where x?0.16. Methods of making and using the devices are also described.

Abstract: An illumination assembly is provided which is capable of correcting a color temperature. The assembly includes a substrate with a plurality of coatings applied on a respective plurality of surface portions of a base material. A light emitting device includes one or more light emitting elements of a first color temperature mounted on surface portions of the substrate having a first color coating, and one or more light emitting elements having a second color temperature mounted on surface portions of the substrate having a second color coating. Light emitting elements are individually sealed with a resin containing an excitable phosphor, with a reflectance factor of the first color coating and a reflectance factor of the second color coating set corresponding to light emitted from the light emitting elements having the first and second color temperatures, respectively, with respect to a desired color temperature for the light emitting device.

Abstract: Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract: A small-size LED packaging structure for enhancing a Sight emitting angle includes an opaque base and at least one light emitting chip. The light emitting chip is installed on the opaque base, and the opaque base includes a transparent sidewall disposed around the base and a concave-cup space, and the transparent sidewall is formed by a molding method, and the concave-cup space is filled with a packaging gel by a dispensing method, and the packaging gel is doped with at least one phosphor powder. Therefore, the transparent sidewall can increase the light emitting angle to 140°˜180° and reduce the amount of internal reflected light significantly to avoid the occurrence of a yellow ring phenomenon, and the phosphor powder can enhance the color manifestation and the color gamut.

Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes an insulating layer and a conductive layer on the insulating layer. The conductive layer is patterned to provide first and second conductive traces that connect to a semiconductor light emitting device. The second metal face may include heat sink fins therein. A flexible film including an optical element, such as a lens, also may be provided, overlying the semiconductor light emitting device.

Abstract: The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.

Abstract: Techniques are disclosed for transmitting electromagnetic radiation such as ultra-violet, violet, blue, blue and yellow, and/or blue and green electromagnetic radiation, from LED devices fabricated on bulk semipolar or nonpolar materials and using phosphors. The substrate may include polar gallium nitride.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.

Abstract: An LED light emitter includes a single emitter structure having a substrate with a plurality of light emitting diodes (LEDs) arranged thereon, wherein the plurality of LEDs includes at least one first LED die that produces a first color light, and at least one second LED die that produces a second color light. The LED light emitter also includes a total internal reflection (TIR) lens positioned to collect light emitted from the single emitter structure and adapted to mix the light from the plurality of LEDs to produce a uniform light. The plurality of LEDs are selected such that the light output by the LED light emitter has a desired color temperature when an equal current is supplied to all of the plurality of LEDs.

Abstract: An optoelectronic component includes a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, a conversion element fixed to the connection carrier, wherein the conversion element spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier, and at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, wherein the conversion element spans the semiconductor chips as a dome.

Abstract: Solid state lighting (SSL) devices including a plurality of SSL emitters and methods for manufacturing SSL devices are disclosed. Several embodiments of SSL devices in accordance with the technology include a support having a first lead and a second lead, a plurality of individual SSL emitters attached to the support, and a plurality of lenses. Each SSL emitter has a first contact electrically coupled to the first lead of the support and a second contact electrically coupled to the second lead of the support such that the SSL emitters are commonly connected. Each lens has a curved surface and is aligned with a single corresponding SSL emitter.

Abstract: An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.

Abstract: An LED module comprises an LED chip and a lens matching with the LED chip. The lens comprises a light-guiding portion and a rough portion protruded from the light-guiding portion. A cavity is defined in a bottom of the light-guiding portion. The LED chip is received in the cavity. The light-guiding portion comprises a top surface. Part of light emitted from the LED chip is reflected to an interior of the lens by the top surface of the light-guiding portion, and traveling to the rough portion then being reflected or refracted by the rough portion, and finally traveling out of the lens through the top surface of the light-guiding portion.

Abstract: In a method for manufacturing an integral imaging device, a layer of curable adhesive is first applied on a flexible substrate and half cured such that the curable adhesive is solidified but is capable of deforming under external forces. Then the curable adhesive is printed into a lenticular lens having a predetermined shape and size using a roll-to-roll processing device and fully cured such that the curable adhesive is capable of withstanding external forces to hold the predetermined shape and size. Last, a light emitting diode display is applied on the flexible substrate opposite to the lenticular lens such that an image plane of the light emitting diode display coincides with a focal plane of the lenticular lens.

Abstract: A chip-on-board LEDs package with different wavelengths is provided. The substrate has a conductive layer to connect LEDs with different wavelengths, color temperatures and packages. Therefore, the LEDs could be formed an illuminant matrix with different types connected thereof. Also, a lens is disposed on the illuminant matrix to protect the chip-on-board LEDs structure and enhance luminous efficiency.

Abstract: A lighting device includes an electrically activated emitter, a first layer that contains a first encapsulant material, and a second layer that contains a second encapsulant material, with a textured interface between the first layer and the second layer. Additional layers including further encapsulant materials and/or lumiphoric materials may be provided. Multiple textured interfaces may be provided. Textured interfaces may be arranged as lenses, including Fresnel lenses.

Abstract: A multi-layer array type LED device is provided, which includes a substrate, an encapsulation body, two lead frames, a plurality of LED dices, and a set of optical lens. The outer circumferential edge and the upper and lower periphery of the substrate are completely encapsulated by the encapsulation body so that the multi-layer array type LED device can be tightly packaged. In the present invention, a fluorescent layer is disposed between an optical grease layer and a silica gel protection layer, and thereby the fluorescent layer is protected, and is capable of preventing moisture from permeating therein. On the other hand, in the present invention, the reflection coefficient of the optical grease layer is at least larger than a certain value so that the probability of the light emitted out of the optical chamber can be increased.

Abstract: Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.

Abstract: The LED package comprises a substrate with a first conductive type through-hole and a second conductive type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having first conductive type pad and second conductive type pad, wherein the first conductive type pad is aligned with the first conductive type through-hole; a slanting structure of dielectric layer formed adjacent at least one side of the LED die for carrying conductive traces; a conductive trace formed on upper surface of the slanting structure to offer path between the second conductive type pad and the conductive type through-hole; and a refilling material within the first conductive type through-hole and second conductive type through-hole.

Abstract: Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.

Abstract: An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.

Abstract: An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.

Abstract: A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

Abstract: According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.

Abstract: An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of refraction of the LED and the beam shaping layer.

Abstract: Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in which the light emission control layer (404) contains the non-fluorescent particles at a proportion of 0.01 vol % or more and 10 vol % or less, and the non-fluorescent particles have a diameter of 30 nm or more and 150 nm or less.

Abstract: A light emitting diode (LED) lamp including a socket, an LED module disposed on the socket, and a lamp housing assembled to the socket is provided. LED module includes a supporting member and a plurality of LED packages, wherein each LED package includes a chip carrier, a reflective member, an LED chip, a lens, and a phosphor layer. Reflective member mounted on the chip carrier has a recess for exposing parts of the chip carrier. LED chip disposed in the recess. Lens encapsulating the LED chip has a light-emitting surface, a first reflection surface bonded with the reflective member and a second reflection surface, wherein the LED chip faces the light-emitting surface of the lens.