Abstract: There is provided a light emitting device package including: a substrate having a cavity formed therein; a heat sink provided on a bottom surface of the cavity to be adjacent to an inner wall of the cavity; a light emitting device mounted on the heat sink; and a phosphor layer provided within the cavity and covering the heat sink and the light emitting device.

Abstract: A method for producing a laser device comprising: a semiconductor laser (1) which is configured to emit a laser beam; (2), and a lens (3) which is position-adjusted relative to the semiconductor laser (1), wherein the lens (3) is firstly shifted perpendicularly to the expansion direction of the laser beam (2) and is consequently penetrated by the laser beam (2), wherein the optical axis of the lens (3) lies parallel to the expansion direction of the laser beam (2), and the lens (3) is then fastened to a lens holder (5) by a joining connection (4) by flowing material, which solidifies in order to form the joining connection, such that the mobility of the lens (3) perpendicular to the expansion direction of the laser beam (2) is blocked.

Abstract: A light emitting diode device includes: a cathode lead frame; an anode lead frame which is electrically insulated from the cathode lead frame; a light emitting diode chip which is electrically connected to the cathode lead frame and the anode lead frame respectively; a synthetic resin member which forms an indentation receiving the light emitting diode chip and fixes the cathode lead frame and the anode lead frame; and a metallic heat-radiation/light-reflection member which covers at least a portion of the indentation and covers an upper surface of the synthetic resin member.

Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance with increase in film thickness. In an aspect of the invention, a light emitting element includes a first layer, a second layer and a third layer between mutually-facing first and second electrodes. The first layer is provided to be closer to the first electrode than the second layer. The third layer is provided to be closer to the second electrode than the second layer. The first layer contains a bipolar substance and a substance exhibiting an electron accepting ability with respect to the bipolar substance. The second layer contains a bipolar substance and a substance exhibiting an electron donating ability with respect to the bipolar substance. The third layer contains a light emitting substance.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer and a light-outcoupling layer applied at least indirectly on a radiation permeable surface of the semiconductor layer sequence. A material of the light-outcoupling layer is different from a material of the semiconductor layer sequence and refractive indices of the materials of the light-outcoupling layer and of the semiconductor layer sequence differ from each other by 20% at most. Recesses in the light-outcoupling layer form facets, wherein the recesses do not penetrate the light-outcoupling layer completely. The facets have a total area of at least 25% of an area of the radiation permeable surface.

Abstract: In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of light emitting regions on a major surface of a support substrate. The method can include forming V-shaped grooves by anisotropic etching between the plurality of light emitting regions in the major surface of the support substrate. In addition, the method can include dividing the support substrate at positions of the grooves to separate the light emitting regions.

Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.

Abstract: A light emitting device (1) includes a LED chip (10) as well as a mounting substrate (20) on which the LED chip (10) is mounted. Further, the light emitting device (1) includes a cover member (60) and a color conversion layer (70). The cover member (60) is formed to have a dome shape and is made of a translucency inorganic material. The color conversion layer (70) is formed to have a dome shape and is made of a translucency material (such as, a silicone resin) including a fluorescent material excited by light emitted from the LED chip (10) and emitting light longer in wavelength than the light emitted from the LED chip (10). The cover member (60) is attached to the mounting substrate (20) such that there is an air layer (80) between the cover member (60) and the mounting substrate (20). The color conversion layer (70) is superposed on a light-incoming surface or a light-outgoing surface of the cover member (60).

Abstract: A light extraction substrate for an electroluminescent device and a manufacturing method thereof, in which light extraction efficiency is increased. The light extraction substrate for an electroluminescent device includes a substrate and a light extraction layer formed on the substrate. The light extraction layer contains an oxide that has a wide band gap of 2.8 eV or more. The light extraction layer has a texture on the surface thereof.

Abstract: An LED device and LED module are provided. The LED device is coupled to a lead frame with a first plane and a second plane opposite to the first plane, the lead frame having a LED chip disposed on the first plane. The LED device includes a reflection cup structure disposed on the lead frame, a lens structure and at least one fixing structure. The LED chip is disposed in the reflection cup structure and electrically connected to the first plane of the lead frame. The lens structure covers the first plane and the second plane of the lead frame. The fixing structure and the fixing structures are formed integrally and cover the lead frame cooperatively.

Abstract: An LED package includes an electrode, an LED chip, and an insulation layer. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode are separate from each other. The LED chips are connected to the first and second electrodes. The insulation layer covers the first and second electrodes and the LED chip. A cavity is defined in the first electrode for receiving the LED chip therein. A channel is defined between the first electrode and the second electrode. The channel communicates with the cavity and the insulation layer fills in the cavity and the channel.

Abstract: There is herein described a LED lighting device utilizing quantum dots in layers on top of an LED chip. The quantum dots layers and the LED chip are arranged with gradient refractive indices, so that the refractive index of each layer is preferably less than the refractive index of the immediately underlying layer or chip. The quantum dots with emission peaks at longer wavelengths are preferably arranged in lower layers closer to the LED chip; while the quantum dots with emission peaks at shorter wavelengths are arranged in higher layers farther from the LED chip.

Abstract: According to one embodiment, an organic electroluminescent device comprises a translucent substrate, a light extraction layer including a convex structure disposed in a net form on one surface of the substrate and having a tilted surface forming an acute angle relative to the substrate, and a planarizing layer disposed on the convex structure, a first electrode disposed on the light extraction layer, a luminescent layer disposed on the first electrode and containing a host material and a luminescent dopant, and a second electrode disposed on the luminescent layer. A refractive index of the planarizing layer is approximately equal to a refractive index of the first electrode or is larger than the refractive index of the first electrode, and a refractive index of the convex structure is smaller than a refractive index of the planarizing layer.

Abstract: An embodiment of the disclosure includes a method of fabricating a plurality of light emitting diode devices. A plurality of LED dies is provided. The LED dies are bonded to a carrier substrate. A patterned mask layer comprising a plurality of openings is formed on the carrier substrate. Each one of the plurality of LED dies is exposed through one of the plurality of the openings respectively. Each of the plurality of openings is filled with a phosphor. The phosphor is cured. The phosphor and the patterned mask layer are polished to thin the phosphor covering each of the plurality of LED dies. The patterned mask layer is removed after polishing the phosphor.

Abstract: Emitter packages are disclosed having a thixotropic agent or material, with the encapsulant exhibiting significant reduction of thixotropic agent scattering. The packages exhibit a corresponding reduction or elimination of encapsulant clouding and increased package emission efficiency. This allows for the thixotropic agents to be included in the encapsulant to alter certain properties (e.g. mechanical or thermal) while not significantly altering the optical properties of the encapsulant. One embodiment of a light emitting diode (LED) package according to the present invention comprises an LED chip with an encapsulant over the LED chip. The encapsulant has an encapsulant refractive index and also has a thixotropic material with a refractive index that is substantially the same as the encapsulant refractive index.

Abstract: A light emitting device comprises an LED die, a dome lens encapsulating the LED die, the dome lens having a first outer curved surface, and a photopolymerizable composition disposed on the dome lens. The photopolymerizable composition forms a meniscus lens defined by a second outer curved surface and an inner curved surface, the inner curved surface being in contact with only a portion of the first outer curved surface. The dome lens and the meniscus lens in combination form an elongated dome lens.

Abstract: Embodiments of an LED disclosed has an emitter layer shaped to a controlled depth or height relative to a substrate of the LED to maximize the light output of the LED and to achieve a desired intensity distribution. In some embodiments, the exit face of the LED may be selected to conserve radiance. In some embodiments, shaping the entire LED, including the substrate and sidewalls, or shaping the substrate alone can extract 100% or approximately 100% of the light generated at the emitter layers from the emitter layers. In some embodiments, the total efficiency is at least 90% or above. In some embodiments, the emitter layer can be shaped by etching, mechanical shaping, or a combination of various shaping methods. In some embodiments, only a portion of the emitter layer is shaped to form the tiny emitters. The unshaped portion forms a continuous electrical connection for the LED.

Abstract: A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TSV) and a second active TSV connected to the first and the second active bond pads, respectively. The carrier chip further includes a dummy TSV therein, which is electrically coupled to the first active bond pad, and is configured not to conduct any current when a current flows through the LED chip.

Abstract: To provide a substrate which is light and has high reliability and high light extraction efficiency from an organic EL element. To provide a substrate which includes a protective layer in a resin layer, an uneven structure on a light incident surface, and an opening which surrounds the uneven structure and through which the protective layer is exposed. To provide a light-emitting device which includes a resin layer provided with an uneven structure on a light incident surface over a protective layer, and a light-emitting element in the protective layer and a counter substrate which are bonded with a sealant. The protective layer and the resin layer have a property of transmitting visible light. The light-emitting element includes a light-transmitting first electrode over a resin layer, a layer containing a light-transmitting organic compound over the first electrode, and a second electrode over the layer containing a light-transmitting organic compound.

Abstract: A structure and a method for encapsulating a solid-state lighting chip (1) are provided. The structure includes the following parts: a heat sink base (2) is provided; a single solid-state lighting chip (1) or multiple solid-state lighting chips distributed as an array are positioned or packaged on the heat sink base (2); the lighting surface of the solid-state lighting chip (1) is set as a bare surface; a single alignment unit (5) or multiple alignment units distributed as an array are positioned above the solid-state lighting chip (1) and aligned with the solid-state lighting chip (1), in order to output a nearly parallel light which is aligned from the light of the solid-state lighting chip (1). A light source device or a lamp device with the light source device using the encapsulating structure or the method, has the advantages of low levels of light expansion, and high brightness, high power light output with low cost.

Abstract: A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.

Abstract: The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

Abstract: There are provided a light emitting device package and a method of manufacturing thereof. The light emitting device package including a first lead frame including amounting area and a heat radiating area surrounding the mounting area, the mounting area being protruded upwardly so as to be located higher than the heat radiating area; a second lead frame disposed to be spaced apart from the first lead frame; at least one light emitting device disposed on the mounting area of the first lead frame; a molding part formed so as to fix the first and second lead frame leads thereto; and a lens part disposed over the at least one light emitting device and the molding part, and the method of manufacturing the light emitting device package are provided.

Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Abstract: Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or l

Abstract: Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.

Abstract: The present invention discloses a surface-mount LED with optical lens, comprising a surface-mount LED with a flat plane on the top thereof and an optical lens packaged on said flat plane. The present invention decreases the light emitting angle and increase the luminosity of the LED through the light convergence effect by the optical lens; the present invention also can effectively enhance the usage of the side light rays through the light reflection effect of the cylinder, no extra reflection cup is required; under the condition of the same luminance being provided, less LEDs are used according to the present invention, thereby saving energy and reducing cost.

Abstract: The invention relates to a light-absorbing or light-emitting solar cell assembly and also a solar cell arrangement which is constructed from 2 to 10,000 of the solar cell assemblies according to the invention.

Abstract: A light emitting diode apparatus comprises a substrate having a circuit pattern, a reflection layer disposed on the substrate, at least one light emitting element disposed on the reflection layer, a reflector disposed around the at t one light emitting element, a sealing material formed over the at least one light emitting element and a phosphor layer disposed over the sealing material. The light emitting element comprises a conductive portion electrically coupled to the circuit pattern. In one embodiment, a plurality of light emitting elements are linearly arrayed, and a spacer is disposed between every two adjacent light emitting elements.

Abstract: A light emitting diode (LED) cup lamp including a base, an LED light source and a light guiding device is disclosed. The LED light source is disposed on the base. The light guiding device is disposed above the LED light source. The light guiding device has a light guiding region facing the LED light source. After the light emitted from the LED light source is guided through the light guiding region, the light is further guided by other parts of the light guiding device so that the light is emitted towards the exterior of the LED cup lamp.

Abstract: An LED connector assembly includes a housing having a cavity formed therein. A connector interface is positioned on the housing to receive electrical wiring from a power source. An LED package is provided having at least one LED die coupled thereto. The LED package is removably received in the cavity of the housing and retained using features in the LED package and housing. The LED package is electrically coupled to the connector interface to provide power to the at least one LED die.

Abstract: Provided is a display panel device including a pixel unit including a luminescent layer, and a lens that covers a luminescent region of the luminescent layer placed above the pixel unit and that transmits light emitted from the luminescent layer. The height between a luminescent face of the luminescent region and an apex of the lens is uniform along the straight line in the long axis direction of the luminescent region. Furthermore, at both end parts of the lens, a cross-section of the light emitting side corresponding to the long axis direction of the luminescent region has a shape of an elliptic arc having a predetermined curvature.

Abstract: The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

Abstract: A light emitting device (LED) package is disclosed. The light emitting device package includes a light emitting device, a substrate on which the light emitting device is mounted in plural; and a lens mounted on the substrate so as to cover and seal the light emitting device and having an accommodating groove formed in a lower surface thereof contacting the substrate, the accommodating groove accommodating the light emitting device, and a concave portion formed in an upper surface thereof in such a manner as to be disposed at a position corresponding to the light emitting device, wherein the concave portion has a radius of curvature on an optical axis of the lens and is formed to be depressed from the upper surface to the lower surface.

Abstract: A light emitting diode (LED) package and the manufacturing method thereof are provided. The LED package comprises a substrate, at least one LED die, a lens and an in-mold decoration film, wherein the LED die is fixed on the substrate; the lens is convexly molded on the substrate to encapsulate the LED die; and the in-mold decoration film has at least one phosphor layer disposed on the lens and a surface treatment layer disposed on the phosphor layer.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A light-emitting device package uses a metal layer as a reflective region and includes a light-emitting device chip and an electrode pad that are disposed on an insulating layer. In addition, the electrode pad and an electrode pattern of a printed circuit board are connected to each other by an electrode pattern formed of conductive ink. A method of manufacturing a light-emitting device package includes forming an insulating layer on a metal layer, and bonding a light-emitting device chip and an electrode pad on the insulating layer. The electrode pad and a printed circuit board are connected to each other by conductive ink.

Abstract: A reliable semiconductor light-emitting device and a method for manufacturing the same can be provided in which peeling can be prevented in a phase boundary, and optical axis positional errors between the optical lens and a semiconductor light-emitting chip can be reduced or prevented. The semiconductor light-emitting device can include a base board having at least one chip, a reflector fixed on the base board so as to enclose the chip, and an encapsulating resin disposed in the reflector. An optical lens can include a concave-shaped cavity that has an inner corner surface having a plurality of convex portions thereon. The optical lens can be located adjacent the reflector by contacting the lens with a top surface of the reflector so as to enclose the reflector. A spacer that is disposed between the concave-shaped cavity and the reflector can ease a stress that is generated due to temperature changes.

Abstract: Disclosed is a photonic integrated circuit having a plurality of lenses and a method for making the same. The photonic integrated circuit is comprised of optical circuitry fabricated over an underlying circuitry layer. In some embodiments, the optical circuitry includes a dielectric material having recesses disposed within, layers of a light waveguide material deposited within the recesses, and lenses disposed over each layer of waveguide material. The underlying circuitry layer may include, for example, a semiconductor wafer as well as circuitry fabricated during front end of line (FEOL) semiconductor manufacturing such as, for example, sources, gates, drains, interconnects, contacts, resistors, and other circuitry that may be manufactured during FEOL processes. The underlying circuitry layer may also include circuitry manufactured during back end of line semiconductor manufacturing processes such as, for example, interconnect structures, metallization layers, and contacts.

Abstract: A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 ? and less than or equal to 100 ?. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

Abstract: A light emitting diode (LED) package is provided. The LED package includes an LED, a plurality of lead frames electrically connected with the LED, a package body having a receiving groove exposed to receive the LED therein and including a plurality of supporting units provided to project from an inner side surface of the receiving groove, and a filling member having an engaging groove engaged with the supporting unit at a circumference of a side surface thereof, and included inside the receiving groove.

Abstract: LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior to certain critical metallization steps. This helps avoid damage to the metalized part that might occur as a result of the high mounting or bonding temperature for the lens. One embodiment of an LED chip comprises a flip-chip LED and a lens mounted to the topmost surface of the flip-chip LED. Lenses can be bonded to LEDs at the wafer level or at the chip level. The lens comprises a non-polymer material and the LED chip is characterized as having substantially no polymer materials in contact with the LED chip.

Abstract: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.

Abstract: A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes an LED including a first electrode pad and a second electrode pad disposed on one surface thereof; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad; a substrate including a via hole bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the via hole to extend to a part of the second surface; and a bonding metal pattern layer bonded to the wiring metal layer exposed through the via hole at the first surface of the substrate and also bonded to the first electrode pad and the second electrode pad.

Abstract: The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.

Abstract: An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.

Abstract: A light-emitting devices and methods for forming light-emitting devices are provided. The device comprises of a substrate having a first refractive index, a transparent electrode that is coupled to an organic layer, where the transparent electrode has a second refractive index different from the first refractive index. An undercoat layer is selected that has a third refractive index to substantially match the first refractive index to the second refractive index. The undercoat layer is selected such that it has a capacity to reduce root mean square roughness of the transparent electrode film deposited. The undercoat layer is selected to improve electrical properties of the transparent electrode layer. The undercoat layer is provided between the substrate and the transparent electrode.

Abstract: An improved LED device is disclosed and includes at least one active layer in communication with an energy source and configured to emit a first electromagnetic signal within a first wavelength range and at least a second electromagnetic signal within at least a second wavelength range, a substrate configured to support the active layer, at least one coating layer applied to a surface of the substrate, the coating layer, configured for 0-90 degree incidence, to reflect at least 95% of the first electromagnetic signal at the first wavelength range and transmit at least 95% of the second electromagnetic signal at the second wavelength range, at least one metal layer applied to the coating layer and configured to transmit the second electromagnetic signal at the second wavelength range therethrough, and an encapsulation device positioned to encapsulate the active layer.

Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: The LED package structure of the invention includes a substrate (1), an LED chip (2) mounted on the substrate (1) and a lens (3) covering the LED chip (2). A light penetrable film (4) whose refractive index is between those of the lens (3) and LED chip (2) is formed between the LED chip (2) and lens (3). The light penetrable film (4) is formed on the inner surface of the lens (3) facing the LED chip (2) in advance. The lens (3) is applied with hot pressing while the lens (3) is packaged so as to make the light penetrable film (4) coated on the LED chip (2).