Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: A method of coating a light emitting device is provided. The method includes preparing a plurality of light emitting devices. The plurality of light emitting devices are coated with a first photocurable liquid. First light is selectively exposed to the first photocurable liquid to form a first coating layer on at least a partial region of a surface of each of the plurality of light emitting devices. The plurality of light emitting devices on which the first coating layer is formed are coated with a second photocurable liquid. Second light is selectively exposed to the second photocurable liquid to form a second coating layer on at least a partial region of the surface of each of the plurality of light emitting devices or a surface of the first coating layer. The first coating layer corresponds to the cured first photocurable liquid, while the second coating layer corresponds to the cured second photocurable liquid.

Abstract: Inverted optical device. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. A flip wafer is attached to the plurality of light emitting diodes, away from the carrier wafer and the carrier wafer is removed. The plurality of light emitting diodes may be singulated to form individual light emitting diode devices.

Abstract: An LED includes an LED chip, an encapsulant for encapsulating the LED chip, and a lens attached to the encapsulant. The lens includes a main body, and a light converting unit with a light converting material distributed therein. The main body defines a receiving space facing the LED chip. The light converting unit is received in the main body. Light emitted by the LED chip passes through the light converting unit and then enters into the main body of the lens. The light converting material of the light converting unit changes a wavelength of the light of the LED chip when the light passes through the light converting unit.

Abstract: Opal glass compositions and devices incorporating opal glass compositions are described herein. The compositions solve problems associated with the use of opal glasses as light-scattering layers in electroluminescent devices, such as organic light-emitting diodes. In particular, embodiments solve the problem of high light absorption within the opal glass layer as well as the problem of an insufficiently high refractive index that results in poor light collection by the layer. Particular devices comprise light-emitting diodes incorporating light scattering layers formed of high-index opal glasses of high light scattering power that exhibit minimal light attenuation through light absorption within the matrix phases of the glasses.

Abstract: A light-emitting diode device includes: a substrate; an upper metal film disposed on an upper surface of the substrate, and including a chip-mounting region and a plurality of conductive pad regions; two first light-emitting chips and two second light-emitting chips disposed on the chip-mounting region, the first and second light-emitting chips being disposed alternately, two of the first and second light-emitting chips being opposite to each other; a fluorescent layer coated on the first light-emitting chips; and a lens disposed on the substrate to cover the first and second light-emitting chips and the fluorescent layer.

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an electrode layer, a current density adjusting pattern on the electrode layer, and a light emitting structure on the electrode layer and the current density adjusting pattern. A column pattern or a hole pattern serving as a structure of a resonant cavity is formed at an upper portion of the light emitting structure.

Abstract: The present invention discloses an LED package structure which has a housing, an LED chip and a transparent encapsulant. The housing has a recess and a plurality of protrusions. The LED chip is mounted in the recess of the housing, and covered in the recess by the transparent encapsulant. The protrusions are formed in the recess or on the edge of the housing. The protrusions of the present invention can form the uneven shape of the surface of the transparent encapsulant, so as to increase the diffusion angle of the light and enhance the light extraction efficiency.

Abstract: There is provided a light emitting diode (LED) package including: a package main body; an LED chip mounted on the package main body; and a hydrophobic pattern formed on the package main body spaced apart from the LED chip; and a resin unit encapsulating the LED chip and the resin unit is defined by the hydrophobic pattern. The LED package and a fabrication thereof which incur less production costs and have various patterns and enhanced intensity of illumination can be provided.

Abstract: A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

Abstract: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The layer structure formed of at least a part of the second compound semiconductor layer in a thickness direction of the second compound semiconductor layer. The first compound semiconductor layer has a thickness greater than 0.6 ?m. A high-refractive index layer formed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material of the first compound semiconductor layer is formed in the first compound semiconductor layer.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element, and a sealing material sealing the semiconductor light-emitting element. The sealing material includes a phosphor which includes a matrix including a glass and a luminescence center included in the matrix. A refractive index of the matrix is more in a far side of the matrix than the refractive index of the matrix in a near side of the matrix, the far side being located farther from the semiconductor light-emitting element than the near side. The refractive index of the matrix is the same as a refractive index of the semiconductor light-emitting element.

Abstract: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.

Abstract: According to one embodiment, a light emitting device includes a first lead, a light emitting element, a second lead and a molded body. The light emitting element is fixed on the first lead. The second lead is provided away from the first lead and electrically connected to the light emitting element via a metal wire. The, molded body made of a sealing resin covers the light emitting element, end portions of the first lead and the second lead, the light emitting element being fixed on the end portion of the first read, and the metal wire being bonded on the end portion of the second lead. The first groove is provided between first and second portions in a front surface of the second lead, the first portion being in contact with an outer edge of the molded body and the metal wire being bonded on the second portion.

Abstract: A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die.

Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer.

Abstract: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

Abstract: An LED unit includes a housing accommodating a wiring substrate mounted an LED, the housing including a light projecting portion for projecting light emitted from the LED, and wiring lines electrically connected to the wiring substrate. First and second lead-out portions, for leading out the wiring lines, are respectively provided at opposite end portions of the housing along a specified direction when seen in a plan view. First and second attachment portions for attaching the housing are respectively provided in the opposite end portions of the housing along the specified direction. The first and second lead-out portions are arranged at the opposite sides from each other with respect to a centerline of the housing extending along the specified direction. The first and second attachment portions are respectively arranged at the opposite sides from the first and second lead-out portions with respect to the centerline of the housing.

Abstract: A light emitting device package includes: a package main body having a chip mounting region surrounded by side walls; lead frames spaced apart from one another, at least one portion thereof being positioned in the chip mounting region; a light emitting device mounted on the chip mounting region; a wire connecting the lead frame and the light emitting device; a lens disposed on the light emitting device; and a lens support unit formed to be higher than the wire in the chip mounting region and supporting the lens such that the lens does not come into contact with the wire.

Abstract: A light emitting diode (LED) module includes a substrate, an LED disposed on the substrate, a phosphor layer disposed on the LED, and a lens disposed on the substrate. The substrate has a recess defined therein. The lens is fastened to the substrate through the recess. A manufacturing method for the LED includes forming the recess in the substrate, mounting the LED on the substrate, forming the phosphor layer on the LED, and forming the lens directly on the substrate such that the lens is fastened to the substrate through the recess.

Abstract: Disclosed are a light emitting device package and a lighting system including the same. The light emitting device package includes a first lead frame and a second lead frame disposed on an insulating layer and electrically separated from each other by a separation part, and a light emitting device disposed on the second lead frame and electrically connected to the first lead frame, and the second lead frame includes a through part disposed opposite to the separation part such that the light emitting device is located therebetween.

Abstract: A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected with the electrode layers via two wires. A reflective cup is mounted on the ceramic substrate and defines a receiving space above the top of the ceramic substrate and the first packing layer. A second packing layer is received in the receiving space and covers the first packing layer.

Abstract: A light-emitting diode (LED) structure includes a substrate, a plurality of LED chips, a first colloid, a second colloid, and a lens. The substrate is provided with at least one retaining section, and the LED chips are mounted on the substrate and covered by the first colloid. The second colloid is located to one side of the first colloid opposite to the substrate. The lens is provided with at least one catching section correspondingly engaged with the at least one retaining section, so that the lens is connected to the substrate to form a unitary body through engagement of the catching section with the retaining section and closes the LED chips, the first colloid and the second colloid in between the lens and the substrate. With these arrangements, the LED structure can have upgraded lighting efficiency and allows quick change of LED color temperature or LED beam angle.

Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: A light-emitting diode structure is provided. The light-emitting diode structure includes a light-emitting diode chip, a lead frame for electrically connecting and supporting the light-emitting diode chip, and a lens covering the light-emitting diode chip and to partially cover the lead frame. A recess disposed on the upper portion of the lens has a ladder-like inner wall formed of an upper inclined wall portion, a lower inclined wall portion, and a connecting wall portion connected to the upper and lower inclined wall portions. The slope of the upper inclined wall portion is greater than that of the lower inclined wall portion, and the slope of the connecting wall portion is greater than the upper and lower inclined wall portions.

Abstract: The present invention relates to an optical device and a method for manufacturing the same. The technical object of the invention is to realize a surface emitting body which allows heat generated from a light-emitting chip to be easily dissipated, eliminates the need for an additional wiring layer, and allows a singular light emitting chips or a plurality of light emitting chips to be arranged in series, in parallel, or in series-parallel. The present invention discloses an optical device comprising: a substrate; a plurality of light emitting chips disposed on the substrate; a plurality of conductive wires which electrically connect the substrate with the light emitting chips such that the plurality of light emitting chips are connected to each other in series, in parallel or in series-parallel; and a protective layer which covers the plurality of light emitting chips and the plurality of conductive wires on the substrate.

Abstract: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a cross-sectional shape of the screen member is substantially rectangular, and a width of the cross-sectional shape of the screen member being larger than a height of the cross sectional shape of the screen member, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.

Abstract: There is described an optoelectronic device having a housing and a chip housed by the housing. At least a portion of the chip protrudes through an aperture in a wall of the housing. There is further provided an optoelectronic module comprising such an optoelectronic device and electronic control circuitry adapted to control the operation of the optoelectronic device.

Abstract: A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.

Abstract: An LED package comprises a frame having a concave portion formed in the center thereof; one or more LED chips mounted on the bottom surface of the concave portion; and a lens filled in the concave portion, the lens having an upper surface formed of continuous prismatic irregularities forming concentric circles.

Abstract: A LED package with a Fresnel lens includes a base, a LED chip, a surrounding body and a lens. The lens is a Fresnel lens which refracts the beam of light from the LED chip to one definite direction for spotlighting the emitting light in a certain orientation.

Abstract: An LED module (1) includes a plurality of LEDs (76 to 89) which are arranged on a printed circuit board (75) and which each have a “bedding element” with a lens (100 to 113) with which the respective LED (76 to 89) protrudes from the printed circuit board plane. The LEDs (76 to 89) are each coupled to a light input element of an optical waveguide body and the respective associated light input element radiates the respective luminous flux from the associated LED (76 to 89) outwards from the LED module (1). To achieve a homogeneous external appearance, the printed circuit board (75) for the LEDs (76 to 89) has at least one passive LED (95, 96, 97) provided thereon.

Abstract: An organic luminance device includes a base substrate, a organic luminance multi-layered structure and a cover substrate. Furthermore, a protective film is used to wrap the light emitting surface and at least one lateral surface of the base substrate to prevent the substrate from crack. The protective film may be doped with one or more dopants having a refractive index different from original material of the protective film.

Abstract: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and a sacrificial pattern sandwiched between the device layer and the first substrate. A protective layer is formed over the first substrate to selectively cover parts of the light emitting devices, and other parts of the light emitting devices are uncovered by the protective layer. The device layers uncovered by the protective layer are bonded with a second substrate. The sacrificial patterns uncovered by the protective layer are removed, so that parts of the device layers uncovered by the protective layer are separated from the first substrate and are transfer-bonded to the second substrate.

Abstract: A light emitting diode (LED) package is disclosed. The LED package includes a first metal line layer and a second metal line layer bonded to a circuit substrate, a thin film substrate disposed on the first metal line layer and the second metal line layer and configured to include an opening that exposes the first metal line layer and the second metal line layer, and an LED disposed in the opening and brought into contact with the first metal line layer and the second metal line layer.

Abstract: According to one embodiment, a light emitting device includes first and second plate electrodes, a light emitting element and an insulator. The first plate electrode includes first and second major surfaces. The second plate electrode includes third and fourth major surfaces. The light emitting element is placed between the first surface and third major surfaces. The light emitting element includes a semiconductor stacked body having a fifth major surface and a sixth major surface, a first electrode and a second electrode. The semiconductor stacked body includes a light emitting layer. Optical axis is made perpendicular to a side surface of the semiconductor stacked body. The insulator is provided in contact with the first and second plate electrodes and including a window. The light beam is enabled to pass through the window and to be emitted outward.

Abstract: Disclosed is a light emitting device including a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode disposed on the first conductive type semiconductor layer, a second electrode disposed on the second conductivity type semiconductor layer, and a low temperature oxide film disposed on the light emitting structure, with an irregular thickness.

Abstract: In a display apparatus including pixels, each of which has organic EL elements which emit red, green, and blue (RGB) colors and a refractive index-control layer, an electrode at a light extraction side of each organic EL element is a silver layer in contact with a charge transport layer, the refractive index-control layer is arranged on the silver layer in common with the organic EL elements which emit RGB colors, and an effective refractive index (neff) represented by the following formula is in a range of 1.4 to 2.3. neff=0.7×nu+0.3×nd In the above formula, nu indicates the refractive index of the refractive index-control layer 3, and nd indicates the refractive index of the charge transport layer 1.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: A lead frame for a light-emitting diode (LED). The lead frame includes a first lead and a second lead. Each lead includes a top portion and an integrated wire-clasping portion. The first and second top portions each angle away from the center of the lead frame to form an increasingly larger gap between the two leads. The wire-clasping portions of each lead initially lie in a common plane and are adjacent one another. After securing the wire to the wire-clasping portions of the lead frame, the leads of the lead frame are rotated or twisted approximately 90 degrees such that the wire-clasping portions of the leads are opposite one another, rather than lying in the same plane. The wires and attached lead frame are inserted into a lampholder, the lampholder recesses receiving the top tabs of the lead frame and holding the wires and lead frame in place.

Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.

Abstract: Provided is an image display apparatus in which color breakup of a reflection image formed from reflected ambient light may be reduced to suppress the influence of an ambient environment. The image display apparatus includes multiple pixels. Each of the pixels includes a light-emitting layer and a structure layer having a refractive index distribution in an in-plane direction parallel to a screen of the image display apparatus, for extracting light generated from the light-emitting layer. The structure layer includes multiple structures formed of a first medium and a layer formed of a second medium having a refractive index different from a refractive index of the first medium. The multiple structures are non-periodically arranged in the layer. Reflected ambient light is reflected by the multiple structures formed of the first medium to have an overlap range to reduce color breakup of a reflection image formed from the reflected ambient light.

Abstract: A lighting device is formed using a light-emitting element by a more simplified method. The lighting device includes a light-emitting element including a light-emitting layer between a first electrode and a second electrode, a substrate provided with the light-emitting element and an uneven region around the periphery of the light-emitting element, a sealing substrate facing the substrate, connection electrodes connected to the first electrode and the second electrode and formed over the uneven region, and a sealant for bonding the substrate and the sealing substrate. The connection electrodes are each formed using a conductive paste, and the sealant is in contact with the connection electrodes and the uneven region provided around the periphery of the light-emitting element.

Abstract: Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and cutting kerfs through the solid state emitter and the substrate to separate individual dies. The solid state emitter can have a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The individual dies can have sidewalls that expose the first semiconductor material, active region and second semiconductor material. The method can further include applying a reflective material into the kerfs and along the sidewalls of the individual dies.

Abstract: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.

Abstract: Provided is a light emitting device that can suppress variation in a resonance frequency of a mode, so that light emission can be enhanced at high efficiency even in a case where photonic crystal, in which defect cavities are periodically arranged, is used. The light emitting device includes: an active layer; a photonic crystal layer including defects introduced therein, the defects disturbing periodicity of a refractive index distribution of photonic crystal; and a cladding layer having a refractive index lower than an effective refractive index of the photonic crystal layer, in which the defects are used as defect cavities. The photonic crystal layer has a structure in which the defect cavities are arranged. Each of the defect cavities has a major axis and a minor axis having different axial lengths, and the major axes are directed in different directions between neighboring defect cavities.

Abstract: There is provided a light emitting device package including a substrate having a cavity therein; alight emitting device mounted on a bottom surface of the cavity; a first wavelength conversion part including a first phosphor for a wavelength conversion of light emitted from the light emitting device and covering the light emitting device within the cavity; and a second wavelength conversion part including a second phosphor allowing for emission of light having a wavelength different to that of the first phosphor and formed as a sheet on the first wavelength conversion part.

Abstract: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Abstract: An optoelectronic semiconductor component for a lighting device including a carrier, at least one optoelectronic semiconductor chip mounted on the carrier and which includes a radiation passage face remote from the carrier, by which a plane is defined, and a lens comprising 1) a radiation exit face, which, relative to a height above the plane, exhibits a minimum, in particular in a central region, and at least two local maxima, and at least two local maxima, and 2) at least two connecting embankments which each extend from one of the maxima to another of the maxima, and each connecting embankment comprises a saddle point higher than the minimum and lower than the maxima adjoining the connecting embankment.

Abstract: A thermally enhanced light emitting device package includes a substrate, a chip attached to the substrate, an encapsulant overlaid on the chip, and a plurality of non-electrically conductive carbon nanocapsules mixed in the encapsulant to facilitate heat dissipation from the chip.